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7605048 Method for forming a capacitor having a copper electrode and a high surface area aluminum inner layer  
High capacitance value capacitors are formed using bimetal foils of an aluminum layer attached to a copper layer. The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum...
7405920 Flat type capacitor-use polypropylene film and flat type capacitor using it  
A flat type capacitor-use polypropylene film having a Ad(thickness determined by micrometer method—thickness determined by weighing method) of 0.05-0.2 μm and a lengthwise shrinkage dimensional...
7374586 Solid electrolytic capacitor, fabrication method thereof, and coupling agent utilizing in the same  
A solid electrolytic capacitor, fabrication method, and coupling agent utilized in the same. The capacitor includes a valve metal layer, an oxide dielectric layer on at least a part of the surface...
7282648 Capacitor-embedded PCB having blind via hole and method of manufacturing the same  
The present invention relates to a capacitor-embedded PCB and a method of manufacturing the same. The capacitor-embedded PCB includes a dielectric layer, a lower electrode layer formed under the...
7087182 Process of forming an electrically erasable programmable read only memory with an oxide layer exposed to hydrogen and nitrogen  
The present invention provides a flash memory integrated circuit and a method of fabricating the same. A tunnel dielectric in an erasable programmable read only memory (EPROM) device is nitrided...
7068492 Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure  
This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired)...
6947276 Process for producing laminated ceramic capacitor  
The present invention relates to a method of manufacturing a multilayer ceramic capacitor, having the steps of: (a) alternately layering internal electrodes and ceramic green sheets containing a...
6943108 Interposer capacitor built on silicon wafer and joined to a ceramic substrate  
An interposer, located between an integrated circuit having power, ground and signal connections and a ceramic substrate having power, ground and signal connections, that includes an oxide layer...
6839219 Laminate for forming capacitor layer and method for manufacturing the same  
An object of the present invention is to provide a laminate for forming a capacitor layer for a printed wiring board which is capable of ensuring a higher capacitance and an inner layer core...
6833322 Apparatuses and methods for depositing an oxide film  
Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a...
6654227 Ceramic electronic parts and method for manufacturing the same  
A ceramic electronic part includes a ceramic assemblage containing laminated plural ceramic sheets, plural inner electrodes formed between the ceramic sheets and containing Ni as a major component,...
6577491 Capacitor array  
A capacitor array includes four internal electrodes and internal electrode extraction sections which are in electrical conduction with the corresponding internal electrodes and have predetermined...
6572793 Method of producing ceramic composition and method of producing electronic device  
A method of producing an electronic device including a dielectric layer includes a dielectric ceramic composition containing a main component expressed by a formula of {(Sr 1−x Ca x )O} m .(Ti...
6507478 Device having a crystalline thin film of complex compound  
It is an object of the present invention to provide a device having a crystalline oxide layer of complex compound which can form a crystalline thin film with high orientation. The lower electrode ...
6440591 Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof  
A ferroelectric thin film coated substrate is obtained by a producing method of forming a metal oxide buffer layer on a substrate, forming a first crystalline ferroelectric thin film thereon by...
6381118 Ceramic electronic component having electronic component containing cuprous oxide  
A ceramic electronic component comprising external electrodes having first electrode layers containing at least a noble metal, cuprous oxide, and glass ingredient electrically connected to internal...
6313491 Semiconductor memory having cell including transistor and ferroelectric capacitor  
An upper electrode of an FRAM capacitor is connected to a diffusion layer on the surface of a semiconductor substrate via a contact hole, second interconnecting layer, contact hole, first...
6236559 Capacitor  
A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including...
6229686 Monolithic capacitor  
A monolithic capacitor includes a sintered ceramic body having a sintered ceramic matrix, a plurality of internal electrodes deposited in the thickness direction in the sintered ceramic body,...
6212059 Capacitor including barium strontium titanate film  
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of...
6185087 Multilayer ceramic chip capacitor with high reliability compatible with nickel electrodes  
Multilayer ceramic chip capacitors which satisfy X7R requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys...
6111744 Capacitor constructions having silicon nitride dielectric materials  
The invention includes a capacitor. The capacitor has a first conductive capacitor electrode, a second conductive capacitor electrode, and a capacitor dielectric material intermediate the first and...
6072207 Process for fabricating layered superlattice materials and making electronic devices including same  
A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Special polyoxyalkylated precursor solutions are designed to...
6014310 High dielectric TiO.sub.2 -SiN composite films for memory applications  
A composite dielectric material useful in advanced memory applications such as dynamic random access memory (DRAM) cells is provided. The composite dielectric material of the present invention...
5955754 Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same  
Metal alkoxycarboxylate-based liquid precursor solutions are used form electronic devices (100) that include mixed layered superlattice materials (112) of a type having discrete oxygen octahedral...
5943580 Method of forming a capacitor or an inductor on a substrate  
High dielectric constant capacitors and/or inductors are formed on a substrate by depositing an amorphous layer (10) of a metal oxide on the substrate (12). A pattern is formed in the metal oxide...
5936832 Semiconductor memory device and method of operation thereof  
A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element...
5933316 Method for forming a titanate thin film on silicon, and device formed thereby  
A method for forming a dielectric layer onto a substrate having a silicon surface includes initially depositing an oxidizable metal thin film onto the surface and thereafter depositing a thin film...
5926360 Metallized oxide structure and fabrication  
A structure for providing an interface with an oxide surface which exhibits both high adhesion and preferred electrical properties. An embodiment includes a capacitor structure having one or two...
5923524 Dielectric material compressing Ta.sub.2 O.sub.5 doped with TiO.sub.2 and devices employing same  
Applicant has discovered that the dielectric constant of Ta 2 O 5 can be significantly enhanced by the addition of small quantities of TiO 2 . Specifically, if Ta 2 O 5 is doped with more than...
5907470 Dielectric thin film capacitor element  
The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has...
5874369 Method for forming vias in a dielectric film  
Vias are formed in a dielectric film overlying an electrode layer by sweeping a laser beam over the area in which the via is to be formed. In particular, a Nd:YAG laser, producing a beam of light...
5872696 Sputtered and anodized capacitors capable of withstanding exposure to high temperatures  
Novel structures for capacitors which are capable of withstanding heat treatments to at least 400° C. while providing low defect densities and low electrical series resistance in its electrodes...
5870273 Multi-functional multilayer device and method for making  
In a multi-functional multilayer device including a body (10) having a varistor section (2) and a capacitor section (3) stacked and integrated therewith, the adhesion between a varistor layer and a...
5838530 Applications of protective ceramics  
It is beneficial for an FPGA, PROM, DRAM and superconductive circuit to use a protective ceramic as its insulating material. This protective ceramic can densely cover metal surface and is free of...
5805410 MOS capacitor for improving electrostatic durability by using of a transistor  
The present invention relates to a MOS capacitor. According to this invention, the MOS capacitor has a transistor structure. One electrode of the capacitor is connected to an emitter of the...
5793601 Composite fuctional device and method for producing the same  
A composite functional device is provided. The device includes a magnetic ceramic including an Ni--Zn ferrite; and a semiconductive including zinc oxide and an oxide of at least one of nickel and...
5790366 High temperature electrode-barriers for ferroelectric and other capacitor structures  
A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O x ,...
5777839 Capacitor using dielectric film  
A capacitor using a dielectric film wherein plural capacitor units each including one or two capacitor elements are formed on an insulator upper electrodes of at least two capacitor elements of...
5754392 Article comprising a relatively temperature-insensitive Ta-oxide based capacitive element  
Dielectric material of nominal composition (Al 2 O 3 ) x (Ta 2 O 5 ) 1 -x, with 0.03<x<0.15, unexpectedly can exhibit a relatively small temperature variation of the dielectric constant...
5751540 Ferroelectric capacitor with rhodium electrodes  
A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the...
5742471 Nanostructure multilayer dielectric materials for capacitors and insulators  
A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many...
5719741 Zinc-deposited base material for metallized capacitors and method of manufacture thereof  
When forming a zinc-deposited base material for metallized capacitors, a primer layer for zinc-deposition made from at least one compound selected from the group comprised of an oxide of silicon,...
5685968 Ceramic substrate with thin-film capacitor and method of producing the same  
In a ceramic substrate with a thin-film capacitor, having a ceramic substrate a lower electrode layer formed on the ceramic substrate, a dielectric layer formed on the lower electrode layer and...
5677825 Ferroelectric capacitor with reduced imprint  
An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a...
5670808 Metal oxide capacitor with a WN.sub.X electrode  
A semiconductor device in which an SiO 2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a...
5623389 Conductive paste and multilayered ceramic capacitor employing the same  
A conductive paste comprises a conductive powder and a glass frit, the glass frit consisting of PbO, B 2 O 3 , SiO 2 , Al 2 O 3 and Bi 2 O 3 , the content of Bi 2 O 3 in the glass frit being...
5615078 Metallized film for electrical capacitors having a semiconductive layer extending entirely across the unmetallized margin  
A film capacitor in which the unmetallized margin is provided with a semiconductive layer. The layer provides a parallel resistive path within the capacitor, itself, obviating the need for an...
5604659 Microelectronic device with centered storage capacitor cavity sized less than feature size  
A method of forming an integrated circuit capacitor is disclosed comprising the steps of providing a substrate, forming a conductive region at the substrate, and forming an insulating layer on the...
5572052 Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer  
In an electronic device using lead zirconate titanate (PZT) or lanthanum lead zirconate titanate (PLZT) as the main insulating material, a PZT film or a PLZT film is formed on a sub-insulating...
Matches 1 - 50 out of 161 1 2 3 4 >