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8183653 |
Magnetic tunnel junction having coherent tunneling structure
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a...
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8184395 |
Magnetic recording and reproducing apparatus with thin-film magnetic head having microwave magnetic exciting function
A magnetic recording and reproducing apparatus includes a metal housing, a magnetic recording medium having a magnetic recording layer, and a thin-film magnetic head having a write magnetic field...
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8184411 |
MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application
A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular...
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8183654 |
Static magnetic field assisted resistive sense element
Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense...
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8184410 |
Magnetoresistive element having free layer magnetic compound expressed by M1M2O
An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction...
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8184409 |
Magnetoresistive device with enhanced pinned layer
A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance...
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8184407 |
Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body
An underlying layer (2) made of NiFeN is disposed over the principal surface of a substrate. A pinning layer (3) made of antiferromagnetic material containing Ir and Mn is disposed on the...
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8182705 |
Method for producing thin film magnetic head having magnetoresistive effect element
A method for producing a thin film magnetic head including a magnetoresistive effect element (MR element) that has a magnetic sensor multi-layered film with a polygonal shape such that a vertex...
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8184408 |
Magnetoresistive element and method of manufacturing the same
A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer...
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8176622 |
Process for manufacturing a magnetic tunnel junction (MTJ) device
A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated...
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8174799 |
Differential magnetoresistive magnetic head
Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability....
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8171618 |
Tunable pole trim processes for fabricating trapezoidal perpendicular magnetic recording (PMR) write poles
A method of forming a write pole for a magnetic recording device is provided. The method comprises providing a layer of magnetic material covered with a secondary hard mask layer and a patterned...
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8174800 |
Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus
A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located...
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8166630 |
Magnetic head slider manufacturing method
To provide a manufacturing method which can adjust the lengths of a recording element and a reproducing element for enabling manufacture of high-quality magnetic head sliders. The manufacturing...
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8169753 |
Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers
A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is...
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8166633 |
Method for manufacturing an extraordinary magnetoresistive (EMR) device with novel lead structure
A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically...
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8169754 |
Dedicated noncorrosive smear detector
A disk drive head slider for a magnetic disk drive is provided. The head slider includes a tunnel magnetic resistance device for reading data on a magnetic disk and a dedicated noncorrosive smear...
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8169752 |
Method for manufacturing a magneto-resistance effect element having spacer layer
In a method for manufacturing a magneto-resistance effect element having a pinned magnetic layer of which a magnetization is fixed substantially in one direction, a free magnetization layer of...
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8164863 |
Current-perpendicular-to-plane (CPP) read sensor with multiple ferromagnetic sense layers
The invention provides a current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with multiple ferromagnetic sense layers. In one...
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8164862 |
Seed layer for TMR or CPP-GMR sensor
A composite seed layer that reduces the shield to shield distance in a read head while improving Hex (exchange coupling field) and Hex/Hc (Hc=coercivity) is disclosed and has a SM/A/SM/B...
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8164864 |
Method and system for fabricating magnetic transducers with improved pinning
A method and system for providing a magnetic transducer are disclosed. The method and system include providing a magnetic element that includes a free layer, a pinned layer, and a nonmagnetic...
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8159791 |
Magnetoresistive sensor having quantum well structure and a trapping layer for preventing charge carrier migration
A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the...
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8151442 |
Method of fabricating a magnetoresistive (MR) element having a continuous flux guide defined by the free layer
Magnetoresistive (MR) elements having flux guides defined by the free layer. The MR element includes a free layer, a spacer/barrier layer, a pinned layer, and a pinning layer. A back edge of the...
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8154825 |
Magnetic recording head and magnetic recording device
It is made possible to provide a magnetic head that can stabilize the high-frequency magnetic field generated from the spin torque oscillator. A magnetic head includes: first and second main...
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8154829 |
Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer
A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath...
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8154828 |
Magnetoresistive effect element in CPP-type structure and magnetic disk device
An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The...
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8146237 |
Method of manufacturing a magnetic head
In a magnetic head manufacturing method, a floated surface of each block having plural magnetic head elements formed and arranged on a substrate is ground and lapped in a grinding/lapping step. The...
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8149549 |
Magnetoresistive head including magnetoresistive effect film of fixed layer, non-magnetic layer, insulating barrier layer and free layer, and magnetic recording device with magnetoresistive head
A magnetoresistive head is provided with high reliability and produced at a high yield rate. The magnetoresistive head includes a lower magnetic shield layer, an upper magnetic shield layer, a...
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8149548 |
Magnetic head and manufacturing method thereof
Embodiments of the present invention provide a magnetic head having a read head of stable reading operation and with less magnetic fluctuation noise. According to one embodiment, a free layer has a...
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8149547 |
Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element
An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the...
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8147994 |
Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic...
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8149546 |
Magnetic field detecting element including tri-layer stack with stepped portion
A magnetic field detecting element comprises a stack including upper and lower magnetic layers, and a non-magnetic intermediate layer sandwiched therebetween, wherein magnetization of the magnetic...
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8144437 |
Magnetoresistive element and thin film magnetic head
An orthogonalizing bias function part formed at a rear part of an MR part in a DFL structure influencing a substantial orthogonalizing function of first and second ferromagnetic layers in...
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8136227 |
Method for making a magnetic head having a non-GMR shunt
A magnetic head having non-GMR shunt for perpendicular recording and method for making magnetic head having non-GMR shunt for perpendicular recording is disclosed. A shunt is provided for shunting...
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8139325 |
Tunnel magnetoresistive thin film
A tunnel magnetoresistive thin film has a high MR ratio and improves heat resistance while maintaining a thin film of a Ru layer used as a non-magnetic layer so that the Ru layer expresses a...
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8139324 |
Magnetic read head having a non-magnetic electrode layer and a magnetic read write system
To provide a magnetic head that is suited for high recording density magnetic read and write, and has little noise. A magnetic pinned layer is formed on a non-magnetic electrode layer via a first...
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8133439 |
GMR biosensor with enhanced sensitivity
A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that...
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8130474 |
CPP-TMR sensor with non-orthogonal free and reference layer magnetization orientation
A TMR sensor structure having free and reference layers, where the magnetic orientations of the free and reference layers are non-orthogonal. In one embodiment, a ferromagnetic free layer film has...
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8130477 |
Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed...
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8130476 |
Tunneling magnetic sensing element and method for manufacturing the same
A tunneling magnetic sensing element includes: a pinned magnetic layer whose direction of magnetization is pinned in one direction; an insulating barrier layer; and a free magnetic layer whose...
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8130475 |
Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers
The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the...
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8124253 |
Tunneling magnetic sensing element including MGO film as insulating barrier layer
A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic...
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8125745 |
Magnetic thin film, and magnetoresistance effect device and magnetic device using the same
A magnetic thin film being ferromagnetic and exhibiting large spin polarization at room temperature is provided that comprises a substrate (2) and a Co2Fe(Si1-xAlx) thin film (3) formed on the...
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8125744 |
Current perpendicular to plane magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device
A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex...
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8125040 |
Two mask MTJ integration for STT MRAM
A method for forming a magnetic tunnel junction (MTJ) for magnetic random access memory (MRAM) using two masks includes depositing over an interlevel dielectric layer containing an exposed first...
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8125746 |
Magnetic sensor with perpendicular anisotrophy free layer and side shields
A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a...
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8120126 |
Magnetic tunnel junction device and fabrication
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling...
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8116043 |
Method and system for providing a magnetic transducer having an improved read sensor synthetic antiferromagnet
A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to...
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8111489 |
Magneto-resistance effect element
An example method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an...
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8111488 |
Magnetic multilayered film current element
A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second...
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