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7453673 Magnet tunneling junction with RF sputtered gallium oxide as insulation barrier for recording head  
A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier...
7453672 Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material  
A magnetoresistive device with a spin valve formed from a stack of layers including at least two magnetic layers for which the relative orientation of their magnetization directions can vary under...
7450352 Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers  
This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two...
7450351 Magnetoresistive element having current-perpendicular-to-plane structure, magnetic head, and magnetic memory apparatus thereof  
A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The...
7450350 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned structure having segregated grains of a ferromagnetic material and additive Cu, Au or Ag  
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure, i.e., a structure with first (AP 1 ) and second (AP 2 )...
7446987 Composite hard bias design with a soft magnetic underlayer for sensor applications  
A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co 78.6 Cr 5.2...
7446986 Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling  
A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of...
7446985 Epitaxial oxide cap layers for enhancing GMR performance  
A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer....
7446984 Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers  
A Magnetic Random Access Memory (MRAM) cell and array for storing data. The MRAM array includes a memory cell having a magnetic pinned layer, a magnetic free layer and a non-magnetic spacer or...
7446983 Magnetoresistive element, thin-film magnetic head, head gimbal assembly, and magnetic disk drive  
An MR element comprises: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive...
7446982 Pinning structure with trilayer pinned layer  
A magnetoresistive sensor having a trilayer structure for improved pinning. The pinned layer is exchange coupled with a IrMnCr AFM layer, and has a three ferromagnetic layer, the center one...
7446981 Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head  
This invention provides a high-output magnetic head with a high yield, which is capable of minimizing sense current leak or noise caused by a shift of the magnetic wall of an upper shield layer. In...
7444739 Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process  
A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer....
7444738 Method for tunnel junction sensor with magnetic cladding  
Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and...
7443639 Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials  
Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure. The bilayer includes a crystalline material, such as MgO or...
7443638 Magnetoresistive structures and fabrication methods  
Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted...
7443637 Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same  
A giant magnetoresistance (GMR) sensor with side longitudinal bias (LB) stacks is proposed for magnetic recording at ultrahigh densities. The GMR sensor extends from a read region into two side...
7443636 Magnetic head having layered film with tilted crystalline grain structure  
Embodiments of the invention implement a construction capable of reconciling high read output with high stability by improving the structures of magnetic films. In one embodiment, an inclined...
7443635 Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector  
A multilayer film is placed on a subatrate. The multilayer film includes an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, and a free magnetic layer. The...
7443004 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus  
In a spin valve type element, an interface insertion layer ( 32, 34 ) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (...
7441326 Manufacturing method of a magnetic sensor  
In a magnetic sensor, a lower terminal layer, a magnetosensitive layer, and a cover film are simultaneously patterned into substantially the same size. The opposing surface of the lower terminal...
7440243 Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same  
A read sensor of the current-perpendicular-to-the-planes (CPP) type includes a sensor stack structure formed in a central region between first and second shield layers which serve as leads for the...
7440242 Methods and apparatus for improved read sensors of the CPP type using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer  
A magnetic head with improved hard magnet properties includes a sensor stack structure of current-perpendicular-to-the-planes (CPP) type formed in a central region between first and second shield...
7440241 Magnetoresistive head using longitudinal biasing method with 90-degree magnetic interlayer coupling and manufacturing method thereof  
A magnetoresistive head and a fabricating method thereof accomplishing high read sensitivity and excellent linear response with low noise even if track width narrowing makes progress are provided....
7440240 Magnetic head with domain stabilization and magnetic recording/reproducing apparatus using the same  
Embodiments of the invention provide a spin-valve type magnetic head that satisfies the requirements of both high read output and stability with narrow tracks. In one embodiment, a domain control...
7440239 Magneto-resistance effect element and reproducing head  
It is possible to obtain sensitivity which can achieve an excellent error rate with a high recording density. There are provided a magnetization free layer which has two opposed main surfaces, one...
7436638 Ferromagnetic pinning structure including a first section antiferromagnetically coupled to a pinned layer and a second section elongated relative to the first section in a stripe height direction  
A CPP magnetic sensor is disclosed with a ferromagnetic layer that extends in a first direction a first distance; a nonferromagnetic spacer layer that adjoins the ferromagnetic layer and extends in...
7436637 Magnetoresistive sensor having an improved pinning structure  
A magnetoresistive sensor having a hard magnetic layer extending from the stripe height of the pinned layer to assist in pinning the pinned layer. The pinned layer extends beyond the stripe height...
7436636 Dual CPP GMR sensor with in-stack bias structure  
A dual current perpendicular to plane (CPP) sensor having an in stack bias structure disposed between first and second free layers. The hard bias structure includes a plurality of magnetic layers...
7433163 Seedlayer for high hard bias layer coercivity  
A seedlayer structure for a high coercivity hard bias layer is disclosed, having at least one bi-layer seedlayer, including a CrMo layer, and a W layer fabricated on the CrMo layer. A hard bias...
7433162 Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer  
An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an enhancement layer formed of a chemically-ordered...
7433161 Spin-valve element having fixed layer containing nano-oxide layer  
A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided...
7433160 Magnetoresistive element and method of manufacturing the same  
A magnetoresistive element is disclosed that includes a magnetoresistive film; a cap film configured to cover the magnetoresistive film and include a three-layer structure in at least a part...
7431961 Composite free layer for CIP GMR device  
In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL 2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while...
7428130 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit  
A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is...
7428129 Methods and apparatus for improved hard magnet properties in magnetoresistive read heads using a multi-layered seed layer structure  
A magnetic head with improved hard magnet properties includes a read sensor; a multi-layered seed layer structure in end regions adjacent the read sensor; and a multi-layered seed layer structure...
7428128 High read output, high sensitivity magnetic sensing element  
A magnetic sensing element has pinned magnetic layers disposed on the two sides of a free magnetic layer in the track width direction with nonmagnetic conductive layers therebetween, and an...
7428127 CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element  
A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free...
7426098 Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory  
A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a...
7426097 Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces  
An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A...
7426096 Magnetoresistive effective element with high output stability and reduced read bleeding at track edges  
A first shielding layer and a second shielding layer are disposed by a given distance. An MR film is disposed in between the first shielding layer and the second shielding layer. The first gap film...
7425456 Antiferromagnetic stabilized storage layers in GMRAM storage devices  
A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an...
7423851 Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact  
A magnetoresistive element including a pinned layer in exchange coupling with an antiferromagnetic layer, a free layer whose magnetization rotates or switches according to a media magnetic field,...
7423850 CPP-GMR read head sensor with synthetic free layer providing suppression of spin torque noise  
Improved sensitivity GMR sensors useful for thin film magnetic read heads are disclosed. Spin transfer induced destabilization of the magnetic free layer is suppressed through the application of Tb...
7423849 Magnetoresistive (MR) elements having pinned layers with canted magnetic moments  
Magnetoresistive (MR) elements are disclosed that include pinned layers having canted magnetic moments. An MR element of the invention includes a first pinning layer, a first pinned layer, a first...
7423848 Process and structure to fabricate CPP spin valve heads for ultra-high recording density  
A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen...
7423847 Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge  
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an insulating layer with at least one aperture that confines the flow of sense current through the active...
7420886 Magnetic recording medium, and thermal stability measuring method and apparatus of magnetic recording medium  
There is disclosed a magnetic recording medium in which a seed layer, under layer, intermediate layer, first magnetic layer, nonmagnetic layer, second magnetic layer, protective layer, and...
7420788 GMR and MR enhancing seedlayers for self pinned spin valves  
A magnetic head includes a seed layer structure comprising Ta and NiFeCr seed layers; an antiparallel (AP) pinned layer structure formed above the NiFeCr seed layer; a free layer positioned above...
7420787 Magnetoresistive sensor having a shape enhanced pinned layer  
A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that...
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