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7389577 Method to fabricate an ESD resistant tunneling magnetoresistive read transducer  
A method to fabricate a tunneling magnetoresistive (TMR) read transducer is disclosed. An insulative layer is deposited on a wafer substrate, and a bottom lead is deposited over the insulative...
7383626 Methods for fabricating giant magnetoresistive (GMR) devices  
In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch...
7382587 Magnetic head having self-pinned SV structures for CPP GMR applications  
A magnetic head is disclosed having a CPP read sensor including a seed layer of NiFeCr, a self-pinned structure, a spacer layer, at least one free layer, and an upper capping layer. A lower capping...
7379280 Magnetic tunnel magneto-resistance device and magnetic memory using the same  
A magneto-resistance device is composed of an anti-ferromagnetic layer ( 5 ), a pinned ferromagnetic layer ( 20 ), a tunnel insulating layer ( 9 ) and a free ferromagnetic layer ( 21 ). The pinned...
7375932 Disk drive read head for reading cross-track magnetizations  
A magnetoresistive read head is capable of reading cross-track magnetizations in a magnetic recording disk drive that has the magnetized regions or magnetizations in the magnetic recording layer of...
7372675 Magnetoresistive element, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive  
An MR element comprises: a tunnel barrier layer having two surfaces that face toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and...
7372674 Magnetic tunnel transistor with high magnetocurrent and stronger pinning  
A magnetic tunnel transistor (MTT) having a pinned layer that is extended in a stripe height direction and is exchange coupled with an antiferromagnetic (AFM) layer in the extended portion outside...
7372673 Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer  
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias...
7371587 Method for reducing diffusion through ferromagnetic materials  
A method and apparatus are disclosed for inhibiting diffusion of mobile atoms from an antiferromagnetic layer toward a tunnel oxide layer and through a ferromagnetic layer which is pinned by the...
7369376 Amorphous layers in a magnetic tunnel junction device  
An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum...
7369375 Magneto-resistance effect element and magneto-resistance effect head  
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic...
7369373 CPP GMR with hard magnet in stack bias layer  
A current perpendicular to plane magnetorestive sensor having an improved in stack biasing. An amorphous layer breaks the structure allowing a desire crystolographic structure in an in stack bias...
7367111 Method for producing a spin valve transistor with stabilization  
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a...
7362549 Storage device having first and second magnetic elements that interact magnetically to indicate a storage state  
A storage device includes a storage medium and a probe having a tip and a first magnetic element. The tip of the probe is adapted to form a dent in the storage medium. The storage device further...
7360302 Manufacturing method of a magnetic sensor  
A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the...
7359163 Tunnel magnetoresistance effect device, and a portable personal device  
A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of...
7359161 Magnetic sensor that combines both CPP and CIP modes of operation  
A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are...
7357995 Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance  
Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers...
7355824 Magnetoresistive effect element and magnetic memory having the same  
The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a...
7352543 Ta based bilayer seed for IrMn CPP spin valve  
The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium...
7351483 Magnetic tunnel junctions using amorphous materials as reference and free layers  
Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous...
7349187 Tunnel barriers based on alkaline earth oxides  
Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of alkaline earth oxide. The bilayer...
7349186 Magnetic read head  
A TMR head capable of reconciling high output with high band width is implemented. To that end, two multilayered films each comprised of an insulating layer and a ferromagnetic layer are formed at...
7349185 Three terminal magnetic sensor for magnetic heads with a semiconductor junction  
The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to...
7345855 Tunnel barriers based on rare earth element oxides  
Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of a rare earth oxide. The bilayer also...
7342751 Magnetoresistive effect having multiple base layers between an electrode and an antiferromagnetic layer, magnetic head, and magnetic recording device  
The magnetoresistive effect element comprises an electrode layer 12 of a crystalline material; a base layer 14 of a conductive amorphous material formed over the electrode layer 12 , an...
7324310 Self-pinned dual CPP sensor exchange pinned at stripe back-end to avoid amplitude flipping  
A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having a pinning structure recessed disposed behind the sensor in the stripe height direction.
7323113 Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor  
A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be...
7317597 Method and apparatus for testing magnetic head with TMR element  
A magnetic head testing apparatus having the function of evaluating pin holes in a tunnel barrier layer of a TMR element by a non destructive inspection is disclosed. The testing apparatus...
7313857 Method of manufacturing a magneto-resistive device  
A method of manufacturing a magneto-resistive device is provided for reducing a degradation in device characteristics due to annealing. The method includes the steps of depositing constituent...
7312961 Magnetic head and method of manufacturing same, head suspension assembly and magnetic disk apparatus  
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of...
7308751 Magnetic head and method of manufacturing same, head suspension assembly and magnetic disk apparatus  
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of...
7304359 Magnetic tunnel junction structure with amorphous NiFeSiB free layer  
A magnetic tunnel junction (MTJ) structure for a magnetic random access memory (MRAM) is provided. Specifically, an MTJ structure with an amorphous CoFeSiB or NiFeSiB free layer is provided. The...
7301734 Longitudinal bias structure with improved magnetic stability  
A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is...
7300711 Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials  
Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a...
7298597 Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling  
A magnetoresistive sensor based on the spin accumulation effect has an in-stack biasing structure with a ferromagnetic biasing layer that is magnetically-coupled orthogonally with the sensor free...
7298596 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system  
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is...
7295407 Magnetoresistance effect element, magnetic head and magnetic reproducing system  
A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free...
7292417 Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect  
The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic...
7284315 Method of forming a magnetic tunnel junction  
A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two...
7280324 Magnetoresistive sensor having improved antiparallel tab free layer biasing  
A magnetoresistive sensor having improved free layer biasing and track width control.
7277262 CPP magnetoresistive head including a pair of shields and a sense current preamplifier  
A magnetic recording/reproducing apparatus has a magnetoresistive head having a magnetoresistive film through which a current is flowed in a direction substantially perpendicular to a film plane...
7274539 Composite type thin film magnetic head having a low parasitic capacitance between a write coil and an upper read head shield  
A composite type thin-film magnetic head is provided, which comprises: a MR read head element having an upper shield layer, a lower shield layer, an MR layer in which a sense current flows in a...
7270896 High performance magnetic tunnel barriers with amorphous materials  
A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel baffler. The amorphous magnetic layer includes Co and...
7268986 Double tunnel junction using self-pinned center ferromagnet  
A double tunnel junction TMR magnetoresistive sensor having first and second magnetic free layers separated by a self pinned magnetic layer. The self pinned magnetic layer is separated from the...
7265950 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory  
A magnetoresistance effect element includes a first ferromagnetic layer ( 1 ), insulating layer ( 3 ) overlying the first ferromagnetic layer, and second ferromagnetic layer ( 2 ) overlying the...
7265948 Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon  
No related magnetoresistive multi-layered films made from a metal magnetic film provide sufficient reproducing output power. A high-polarized layer with a thickness of 10 nm or less is formed as a...
7262064 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof  
In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer...
7259943 Magnetic head having a current-perpendicular-to-the-plane structure and using a magneto-resistive effect  
A magnetic head using magnetoresistive effect comprising a magnetic sensing portion formed of a magnetoresistive effect element. The magnetic sensing portion includes a lamination layer structure...
7256971 Process and structure to fabricate CPP spin valve heads for ultra-high recording density  
A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen...
Matches 1 - 50 out of 369 1 2 3 4 5 6 7 8 >