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7390584 Spin dependent tunneling devices having reduced topological coupling  
A ferromagnetic thin-film based magnetic device with internal film coupling compensation including a nonmagnetic material intermediate layer with an initial thin-film of an anisotropic...
7390530 Structure and process for composite free layer in CPP GMR device  
The conventional free layer in a CPP GMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved...
7390529 Free layer for CPP GMR having iron rich NiFe  
By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio...
7389577 Method to fabricate an ESD resistant tunneling magnetoresistive read transducer  
A method to fabricate a tunneling magnetoresistive (TMR) read transducer is disclosed. An insulative layer is deposited on a wafer substrate, and a bottom lead is deposited over the insulative...
7383626 Methods for fabricating giant magnetoresistive (GMR) devices  
In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch...
7382588 Read sensor having a self-pinned layer formed in both central and side regions for increased thermal stability  
A magnetic head includes first and second shield layers and a read sensor formed between and in electrical contact with the first and second shield layers. The read sensor includes a free layer...
7381480 Magnetic recording element and magnetic recording device using the same  
A magnetic recording element includes a fixed layer having first and second surfacesm, a recording layer having third and fourth surfaces and being essentially made of a ferromagnetic material...
7377025 Method of forming an improved AP1 layer for a TMR device  
A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next...
7375932 Disk drive read head for reading cross-track magnetizations  
A magnetoresistive read head is capable of reading cross-track magnetizations in a magnetic recording disk drive that has the magnetized regions or magnetizations in the magnetic recording layer of...
7372675 Magnetoresistive element, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive  
An MR element comprises: a tunnel barrier layer having two surfaces that face toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and...
7370404 Method for resetting pinned layer magnetization in a magnetoresistive sensor  
A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally...
7369376 Amorphous layers in a magnetic tunnel junction device  
An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum...
7369375 Magneto-resistance effect element and magneto-resistance effect head  
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic...
7369374 Current in plane magnetoresistive sensor having a contiguous hard bias layer located at back edge of stripe height  
A current in plane giant magnetoresistive (GMR) sensor having a hard bias layer that extends along the back edge (strip height) of the sensor rather than from the sides of the sensor. The hard bias...
7369373 CPP GMR with hard magnet in stack bias layer  
A current perpendicular to plane magnetorestive sensor having an improved in stack biasing. An amorphous layer breaks the structure allowing a desire crystolographic structure in an in stack bias...
7367111 Method for producing a spin valve transistor with stabilization  
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a...
7367109 Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment  
A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which...
7365948 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film  
An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the...
7360302 Manufacturing method of a magnetic sensor  
A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the...
7360297 Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region  
A spin valve sensor with an antiparallel coupled lead/sensor overlap region is provided comprising a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive...
7359162 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system  
There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be...
7358846 Magnetic spin valve with a magnetoelectric element  
The present invention provides systems and method utilizing magnetoelectric materials such as Cr 2 O 3 to construct tunneling magnetoresistence and/or giant magnetoresistence structures for memory...
7357995 Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance  
Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers...
7355825 Current-perpendicular-to-the-plane structure magnetoresistive element and head slider  
A magnetoresistive film is interposed between domain controlling films in a current-perpendicular-to-the-plane (CPP) structure magnetoresistive element. The domain controlling films are designed to...
7352542 Enhanced spin-valve sensor with engineered overlayer formed on a free layer  
A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an...
7352541 CPP GMR using Fe based synthetic free layer  
A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having an antiparallel coupled free layer including a first magnetic layer of Fe and a second magnetic layer of FeXN,...
7351483 Magnetic tunnel junctions using amorphous materials as reference and free layers  
Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous...
7346977 Method for making a magnetoresistive read head having a pinned layer width greater than the free layer stripe height  
A method for making a magnetoresistive read head so that the pinned ferromagnetic layer is wider than the stripe height of the free ferromagnetic layer uses ion milling with the ion beam aligned at...
7345854 GMR sensor having a reference layer with movable magnetization  
A method for fabricating a spin-valve GMR sensor having a reference layer with a magnetic moment that moves in an opposite direction to that of the free layer in the presence of external magnetic...
7342753 In-stack biasing of the free layer of a magnetoresistive read element  
A magnetoresistive read element with improved biasing of the free layer is disclosed. The read element includes a free layer, a spacer layer, a first pinned bias layer, an APC layer, and a second...
7342752 Magnetoresistive read head having a bias structure with at least one dusting layer  
A magnetoresistive read head includes a magnetoresistive sensor and a bias structure adjacent to the magnetoresistive sensor. The bias structure provides a magnetostatic bias field for the...
7341876 Anti-parallel tab sensor fabrication  
A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer having tab areas on opposite sides of an active area, forming a first layer of a carbon...
7336454 Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains  
A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing...
7336453 Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy  
A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy...
7336451 Magnetic sensing element containing half-metallic alloy  
A pinned magnetic layer 20 and a free magnetic layer 26 include a magnetic portion 17 and a magnetic sublayer 22 , respectively, each comprising a half-metallic ferromagnetic alloy. Since...
7333306 Magnetoresistive spin valve sensor with tri-layer free layer  
A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the...
7333305 Magnetoresistive sensor with in-stack bias layer pinned at the back edge of the sensor stripe  
A magnetoresistive sensor having an in stack bias structure that extends beyond a stripe height edge defined by the free and pinned layers. The bias structure includes a magnetic bias layer that is...
7333304 CPP sensor having hard bias stabilization placed at back edge of the stripe  
A current perpendicular to plane (CPP) having hard magnetic bias layers located at the back of the sensor, opposite the air bearing surface. The bias layer is magnetostatically coupled with the...
7331100 Process of manufacturing a seed/AFM combination for a CPP GMR device  
An improved seed/AFM structure is formed by first depositing a layer of tantalum on the lower shield. A NiCr layer is then deposited on the Ta followed by a layer of IrMn. The latter functions...
7330340 Magnetoresistive sensor with free layer bias adjustment capability  
A magnetoresistive sensor having a free layer biased by an in stack bias layer that has a magnetic moment canted with respect to the ABS, such that the magnetic moment of the biasing layer has a...
7327540 Hard biased materials for recording head applications  
A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a...
7324313 Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability  
Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing...
7324312 Sensor with in-stack bias structure providing exchange stabilization  
A magnetic head having an in-stack bias structure and a free layer structure. The in-stack bias structure includes an antiferromagnetic layer; a first bias layer positioned towards the...
7324311 Rie defined CPP read heads  
A magnetoresistive sensor having a trackwidth defined by AFM biasing layers disposed beneath a free layer of the sensor. The present invention provides a current in plane magnetoresistive sensor...
7324309 Cross-track shielding in a GMR head  
A magnetoresistive read/write head includes an integral top and side shields deposited on top of and substantially surrounding the multiple layers of the MR sensor stack. Such a design is...
7323215 Free layer design for CPP GMR enhancement  
By using a composite free layer of Fe25% Co/NiFe, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free...
7313857 Method of manufacturing a magneto-resistive device  
A method of manufacturing a magneto-resistive device is provided for reducing a degradation in device characteristics due to annealing. The method includes the steps of depositing constituent...
7312961 Magnetic head and method of manufacturing same, head suspension assembly and magnetic disk apparatus  
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of...
7312959 Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor  
At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are...
7310210 Magnetoresistive sensor having cobalt-iron alloy layer in free layer  
A magnetoresistive sensor comprises a pinned layer having a magnetization direction fixed with respect to an external magnetic field, a free layer, having a magnetization direction variable in...
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