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8184410 |
Magnetoresistive element having free layer magnetic compound expressed by M1M2O
An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction...
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8182705 |
Method for producing thin film magnetic head having magnetoresistive effect element
A method for producing a thin film magnetic head including a magnetoresistive effect element (MR element) that has a magnetic sensor multi-layered film with a polygonal shape such that a vertex...
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8184408 |
Magnetoresistive element and method of manufacturing the same
A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer...
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8176622 |
Process for manufacturing a magnetic tunnel junction (MTJ) device
A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated...
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8174799 |
Differential magnetoresistive magnetic head
Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability....
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8169753 |
Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers
A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is...
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8166633 |
Method for manufacturing an extraordinary magnetoresistive (EMR) device with novel lead structure
A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically...
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8164863 |
Current-perpendicular-to-plane (CPP) read sensor with multiple ferromagnetic sense layers
The invention provides a current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with multiple ferromagnetic sense layers. In one...
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8151442 |
Method of fabricating a magnetoresistive (MR) element having a continuous flux guide defined by the free layer
Magnetoresistive (MR) elements having flux guides defined by the free layer. The MR element includes a free layer, a spacer/barrier layer, a pinned layer, and a pinning layer. A back edge of the...
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8154825 |
Magnetic recording head and magnetic recording device
It is made possible to provide a magnetic head that can stabilize the high-frequency magnetic field generated from the spin torque oscillator. A magnetic head includes: first and second main...
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8154828 |
Magnetoresistive effect element in CPP-type structure and magnetic disk device
An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The...
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8149548 |
Magnetic head and manufacturing method thereof
Embodiments of the present invention provide a magnetic head having a read head of stable reading operation and with less magnetic fluctuation noise. According to one embodiment, a free layer has a...
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8149547 |
Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element
An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the...
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8147994 |
Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic...
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8144437 |
Magnetoresistive element and thin film magnetic head
An orthogonalizing bias function part formed at a rear part of an MR part in a DFL structure influencing a substantial orthogonalizing function of first and second ferromagnetic layers in...
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8136227 |
Method for making a magnetic head having a non-GMR shunt
A magnetic head having non-GMR shunt for perpendicular recording and method for making magnetic head having non-GMR shunt for perpendicular recording is disclosed. A shunt is provided for shunting...
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8139324 |
Magnetic read head having a non-magnetic electrode layer and a magnetic read write system
To provide a magnetic head that is suited for high recording density magnetic read and write, and has little noise. A magnetic pinned layer is formed on a non-magnetic electrode layer via a first...
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8130474 |
CPP-TMR sensor with non-orthogonal free and reference layer magnetization orientation
A TMR sensor structure having free and reference layers, where the magnetic orientations of the free and reference layers are non-orthogonal. In one embodiment, a ferromagnetic free layer film has...
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8130475 |
Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers
The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the...
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8105703 |
Process for composite free layer in CPP GMR or TMR device
The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an...
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8107201 |
Hard bias design for extra high density recording
A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper...
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8098464 |
CPP-type magneto resistance element having a pair of free layers and spacer layer sandwiched therebetween
A magnetic field detecting element includes: first and second free layers; a spacer layer; a first exchange coupling transmitting layer; a first pinned layer; a second exchange coupling...
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8094420 |
Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system
The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a...
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8085512 |
CPP-type magnetoresistance effect element having a pair of free layers
A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second...
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8081404 |
Magnetoresistive element including an amorphous reference layer, a crystal layer, and a pinned layer
A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic...
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8081403 |
Magnetic element having a smaller critical dimension of the free layer
A magnetic element includes a pinned layer, a nonferromagnetic spacer layer, and a free layer. The nonferromagnetic spacer layer resides between the pinned layer and the free layer. The free layer...
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8077436 |
CPP-type magnetoresistance effect element having three magnetic layers
A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external...
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8072714 |
Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device
A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit...
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8072712 |
Tunneling magnetic sensing element having two-layered hard bias layer
At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order...
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8072800 |
Magnetic element having perpendicular anisotropy with enhanced efficiency
Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a...
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8059374 |
TMR device with novel free layer structure
A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (...
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8054587 |
Magnetoresistive effect element, thin-film magnetic head with magnetoresistive effect read head element, and magnetic disk drive apparatus with thin-film magnetic head
An MR element includes a lower shield layer, a magnetization free function part stacked on the lower shield layer, an upper shield layer stacked on the magnetization free function part, a...
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8049997 |
Magnetoresistive element including a pair of free layers coupled to a pair of shield layers
A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic...
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8045300 |
Tunneling magnetic sensing element and method for producing same
A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, ...
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8043732 |
Memory cell with radial barrier
Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell....
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8036024 |
Magnetic storage element storing data by magnetoresistive effect
In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further,...
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8035931 |
Tunneling magneto-resistive spin valve sensor with novel composite free layer
The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio...
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8031444 |
Magnetoresistive device of the CPP type, and magnetic disk system
The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped...
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8031442 |
Magnetic head having CPP sensor with improved biasing for free magnetic layer
A magnetic head for a hard disk drive having a CPP read head sensor that includes a layered sensor stack including a free magnetic layer and hard bias elements that are disposed on the sides of the...
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8031441 |
CPP device with an enhanced dR/R ratio
A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a...
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8031445 |
Low noise magneto-resistive sensor utilizing magnetic noise cancellation
A magnetic sensor, formed from a pair of magnetically free layers located on opposing sides of a non-magnetic layer, and method for its manufacture, are described. Biasing these free layers to be...
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8015694 |
Method for making a scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor
A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved sta...
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8018693 |
Magnetic detector including magnetoresistive element and impact sensor
A magnetic detector includes a magnetoresistive element and an impact sensor. The magnetoresistive element has a plurality of element-constituent layers that are stacked and include a free layer...
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8018692 |
Thin film magnetic head and method of manufacturing the same
A thin film magnetic head has a magneto-resistive (MR) effect element including an MR effect film formed by sequentially layering a magnetic pinned layer, a nonmagnetic layer and a free layer, and...
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8018690 |
CPP magnetic recording head with self-stabilizing vortex configuration
A CPP MTJ or GMR read sensor is provided in which the free layer is self-stabilized by a magnetization in a circumferential vortex configuration. This magnetization permits the pinned layer to be...
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8018691 |
CPP dual free layer magnetoresistive head for magnetic data storage
A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one...
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8014109 |
Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon
A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference...
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8011084 |
Method for fabricating narrow magnetic read width TMR/CPP sensors
A method for manufacturing a manufacturing a magnetoresistive sensor that allows the sensor to be constructed with a very narrow and well controlled track width. The method includes depositing a...
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8012316 |
FCC-like trilayer AP2 structure for CPP GMR EM improvement
A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by...
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8014108 |
Magnetoresistive device of the CPP type, utilizing insulating layers interposed in shield layers to form a closed magnetic path usable in a disk system
The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which...
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