Matches 1 - 37 out of 37
Match Document Document Title
7450351 Magnetoresistive element having current-perpendicular-to-plane structure, magnetic head, and magnetic memory apparatus thereof  
A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The...
7446987 Composite hard bias design with a soft magnetic underlayer for sensor applications  
A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co 78.6 Cr 5.2...
7446986 Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling  
A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of...
7446985 Epitaxial oxide cap layers for enhancing GMR performance  
A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer....
7443638 Magnetoresistive structures and fabrication methods  
Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted...
7441326 Manufacturing method of a magnetic sensor  
In a magnetic sensor, a lower terminal layer, a magnetosensitive layer, and a cover film are simultaneously patterned into substantially the same size. The opposing surface of the lower terminal...
7440243 Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same  
A read sensor of the current-perpendicular-to-the-planes (CPP) type includes a sensor stack structure formed in a central region between first and second shield layers which serve as leads for the...
7440242 Methods and apparatus for improved read sensors of the CPP type using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer  
A magnetic head with improved hard magnet properties includes a sensor stack structure of current-perpendicular-to-the-planes (CPP) type formed in a central region between first and second shield...
7440241 Magnetoresistive head using longitudinal biasing method with 90-degree magnetic interlayer coupling and manufacturing method thereof  
A magnetoresistive head and a fabricating method thereof accomplishing high read sensitivity and excellent linear response with low noise even if track width narrowing makes progress are provided....
7440240 Magnetic head with domain stabilization and magnetic recording/reproducing apparatus using the same  
Embodiments of the invention provide a spin-valve type magnetic head that satisfies the requirements of both high read output and stability with narrow tracks. In one embodiment, a domain control...
7440239 Magneto-resistance effect element and reproducing head  
It is possible to obtain sensitivity which can achieve an excellent error rate with a high recording density. There are provided a magnetization free layer which has two opposed main surfaces, one...
7436638 Ferromagnetic pinning structure including a first section antiferromagnetically coupled to a pinned layer and a second section elongated relative to the first section in a stripe height direction  
A CPP magnetic sensor is disclosed with a ferromagnetic layer that extends in a first direction a first distance; a nonferromagnetic spacer layer that adjoins the ferromagnetic layer and extends in...
7433163 Seedlayer for high hard bias layer coercivity  
A seedlayer structure for a high coercivity hard bias layer is disclosed, having at least one bi-layer seedlayer, including a CrMo layer, and a W layer fabricated on the CrMo layer. A hard bias...
7428130 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit  
A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is...
7428129 Methods and apparatus for improved hard magnet properties in magnetoresistive read heads using a multi-layered seed layer structure  
A magnetic head with improved hard magnet properties includes a read sensor; a multi-layered seed layer structure in end regions adjacent the read sensor; and a multi-layered seed layer structure...
7428127 CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element  
A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free...
7426098 Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory  
A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a...
7426097 Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces  
An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A...
7426096 Magnetoresistive effective element with high output stability and reduced read bleeding at track edges  
A first shielding layer and a second shielding layer are disposed by a given distance. An MR film is disposed in between the first shielding layer and the second shielding layer. The first gap film...
7423850 CPP-GMR read head sensor with synthetic free layer providing suppression of spin torque noise  
Improved sensitivity GMR sensors useful for thin film magnetic read heads are disclosed. Spin transfer induced destabilization of the magnetic free layer is suppressed through the application of Tb...
7423849 Magnetoresistive (MR) elements having pinned layers with canted magnetic moments  
Magnetoresistive (MR) elements are disclosed that include pinned layers having canted magnetic moments. An MR element of the invention includes a first pinning layer, a first pinned layer, a first...
7423848 Process and structure to fabricate CPP spin valve heads for ultra-high recording density  
A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen...
7420886 Magnetic recording medium, and thermal stability measuring method and apparatus of magnetic recording medium  
There is disclosed a magnetic recording medium in which a seed layer, under layer, intermediate layer, first magnetic layer, nonmagnetic layer, second magnetic layer, protective layer, and...
7418777 Method on manufacturing spin valve film  
A method of manufacturing a spin valve film, produces a large read out signal. After a completion of a film making process for forming a previous film of two films to be formed successively, but...
7417833 Magnetic recording and reproducing apparatus having element for correcting misaligned magnetization direction  
The invention provides a magnetic recording and reproducing apparatus having magnetic field applying unit applying a magnetic field to a magnetoresistive element to correct a misaligned...
7414817 Magnetoresistive sensor having a laminated hard magnet structure for free layer biasing  
A magnetoresistive sensor having a novel laminated hard bias structure that possesses exceptional magnetic performance characteristics when deposited over a crystalline structure such as in a...
7408749 CPP GMR/TMR structure providing higher dR  
A current perpendicular to plane (CPP) sensor having FeN in their free and pinned layers. A tunnel junction sensor (TMR) according to the present invention can have a MgO barrier layer, and a CPP...
7408748 Side reading reduced GMR for high track density  
As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths...
7408746 Magnetoresistive device and method of manufacturing same, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive  
A magnetoresistive device comprises: a first shield layer and a second shield layer disposed with a space from each other in the direction of thickness; an MR element disposed between the first and...
7405909 Current perpendicular to plane (CPP) magnetoresistive sensor with free layer biasing by exchange pinning at back edge  
A current perpendicular to plane (CPP) magnetoresistive sensor having an in-stack bias structure that is pinned by an AFM layer located behind the back edge (stripe height) of the sensor stack. A...
7405908 Magnetic head with improved free magnetic layer biasing for thinner CPP sensor stack  
In a CPP magnetic head a free magnetic layer and a magnetic biasing layer are disposed within a central layer stack. To pin the magnetization of the bias layer, an antiferromagnetic (AFM) layer is...
7400475 Patterned, synthetic longitudinally exchange biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
7397640 Methods and apparatus for improved read sensors using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer  
A magnetic head with improved hard magnet properties includes a sensor stack structure and a multi-layered seed layer structure formed over crystalline materials of the sensor stack structure. The...
7397639 Magnetic detecting element provided with free layer having layered-ferri configuration  
A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness...
7397638 Magnetoresistive sensor having an in stack bias structure with NiFeCr spacer layer for improved bias layer pinning  
A magnetoresistive sensor having an in stack bias structure for biasing the magnetic moment of the free layer. The in stack bias structure includes a magnetic bias layer that may include a layer of...
7397637 Sensor with in-stack bias structure providing enhanced magnetostatic stabilization  
A magnetic head having an in-stack bias structure and a free layer structure. The in-stack bias structure includes an antiferromagnetic layer, and first through fourth antiparallel (AP) pinned bias...
7394625 Structure/method to form bottom spin valves for ultra-high density  
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an...
Matches 1 - 37 out of 37