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7389577 Method to fabricate an ESD resistant tunneling magnetoresistive read transducer  
A method to fabricate a tunneling magnetoresistive (TMR) read transducer is disclosed. An insulative layer is deposited on a wafer substrate, and a bottom lead is deposited over the insulative...
7383626 Methods for fabricating giant magnetoresistive (GMR) devices  
In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch...
7382590 MR sensor and thin film media having alloyed Ru antiparallel spacer layer for enhanced antiparallel exchange coupling  
A magnetic head having a free layer and an antiparallel (AP) pinned layer structure spaced apart from the free layer. The AP pinned layer structure includes at least two pinned layers having...
7382589 CPP with elongated pinned layer  
CPP magnetic read head designs have been improved by increasing the length of the AFM layer relative to that of both the free and spacer layers. The length of the pinned layer is also increased,...
7382588 Read sensor having a self-pinned layer formed in both central and side regions for increased thermal stability  
A magnetic head includes first and second shield layers and a read sensor formed between and in electrical contact with the first and second shield layers. The read sensor includes a free layer...
7382587 Magnetic head having self-pinned SV structures for CPP GMR applications  
A magnetic head is disclosed having a CPP read sensor including a seed layer of NiFeCr, a self-pinned structure, a spacer layer, at least one free layer, and an upper capping layer. A lower capping...
7379279 Magnetoresistive film with pinning layer interposed between pinned layer and soft magnetic nickel iron alloy layer  
A soft magnetic layer is made of nickel iron alloy containing crystals of the face-centered cubic lattice and crystals of the body-centered cubic lattice. The face-centered cubic lattice serves to...
7377025 Method of forming an improved AP1 layer for a TMR device  
A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next...
7375932 Disk drive read head for reading cross-track magnetizations  
A magnetoresistive read head is capable of reading cross-track magnetizations in a magnetic recording disk drive that has the magnetized regions or magnetizations in the magnetic recording layer of...
7372675 Magnetoresistive element, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive  
An MR element comprises: a tunnel barrier layer having two surfaces that face toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and...
7372672 GMR magnetic sensing element having an antiferromagnetic layer extending beyond the track width and method for making the same  
A magnetic sensing element with improved magnetic detection output and a method for making the same are provided. In the magnetic sensing element, the length of an upper pinned magnetic layer an...
7369375 Magneto-resistance effect element and magneto-resistance effect head  
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic...
7369372 Exchange-coupled film including pinned magnetic layer composed of a plurality of cobalt-iron alloys having different compositions disposed on antiferromagnetic layer, and magnetic sensing element  
An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction...
7369371 Magnetoresistive sensor having a shape enhanced pinned layer  
A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that...
7367111 Method for producing a spin valve transistor with stabilization  
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a...
7367109 Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment  
A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which...
7365948 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film  
An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the...
7362548 Magnetic sensor and manufacturing method therefor  
A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the...
7362547 Magnetic head having PtMn layer formed by ion beam deposition  
A magnetic head having an improved PtMn layer formed by ion beam deposition, an antiparallel (AP) pinned layer structure formed above the PtMn layer, and a free layer formed above the AP pinned...
7362546 Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer  
A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X—Mn alloy (where X is selected from Pt, Pd, Ir, Rh,...
7360302 Manufacturing method of a magnetic sensor  
A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the...
7359162 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system  
There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be...
7357995 Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance  
Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers...
7355824 Magnetoresistive effect element and magnetic memory having the same  
The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a...
7351483 Magnetic tunnel junctions using amorphous materials as reference and free layers  
Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous...
7346977 Method for making a magnetoresistive read head having a pinned layer width greater than the free layer stripe height  
A method for making a magnetoresistive read head so that the pinned ferromagnetic layer is wider than the stripe height of the free ferromagnetic layer uses ion milling with the ion beam aligned at...
7339769 Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having underlayer for enhancing chemical-ordering in the antiferromagnetic layer  
An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an underlayer formed of a chemically-ordered tetragonal-crystalline...
7336451 Magnetic sensing element containing half-metallic alloy  
A pinned magnetic layer 20 and a free magnetic layer 26 include a magnetic portion 17 and a magnetic sublayer 22 , respectively, each comprising a half-metallic ferromagnetic alloy. Since...
7333306 Magnetoresistive spin valve sensor with tri-layer free layer  
A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the...
7333303 Magnetoresistive device supplying sense current thereto dependent upon a relationship existent between the thickness of the fixed layer and its magnetization  
Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording...
7330339 Structure providing enhanced self-pinning for CPP GMR and tunnel valve heads  
A magnetic head having improved self-pinning. The head includes a sensor having an antiparallel (AP) pinned layer structure, where the AP pinned layer structure includes at least two pinned layers...
7327539 CPP giant magnetoresistive head with large-area metal film provided between shield and element  
A CPP giant magnetoresistive (GMR) head includes lower and upper shield layers; and a GMR element disposed between the upper and lower shield layers and comprising a pinned magnetic layer, a free...
7324310 Self-pinned dual CPP sensor exchange pinned at stripe back-end to avoid amplitude flipping  
A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having a pinning structure recessed disposed behind the sensor in the stripe height direction.
7320170 Xenon ion beam to improve track width definition  
Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls...
7312961 Magnetic head and method of manufacturing same, head suspension assembly and magnetic disk apparatus  
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of...
7312960 Magnetic sensing element comprising a pinned magnetic layer, a free magnetic layer, and a nonmagnetic conductive layer disposed therebetween  
A magnetic sensing element is provided in which the magnetization of a pinned magnetic layer is pinned by a uniaxial anisotropy of the pinned magnetic layer itself. A nonmagnetic layer for...
7312959 Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor  
At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are...
7312958 Method for manufacturing magnetic disk apparatus  
A method for manufacturing a magnetic disk apparatus having a highly sensitive reproducing head. A spin-valve-type multilayer film composed of an antiferromagnetic layer, a ferromagnetic layer, a...
7310209 Magnetoresistive sensor having a high coercivity hard magnetic bias layer deposited over a metallic layer  
A magnetoresistive sensor having hard bias layers constructed of CoPtCrB, which high coercivity when deposited over crystalline materials such as an AFM layer or other sensor material. The bias...
7310208 Magnetoresistive sensor containing self-pinned layer containing a plurality of magnetic sublayers with magnetostriction-enhancing layer made of a nonmagnetic material  
A first magnetic sublayer constituting a pinned magnetic layer is provided in contact with a first magnetostriction-enhancing layer to increase the magnetostriction constant of the first magnetic...
7310207 Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure  
A magnetic sensing element using a Heusler alloy is provided. In the magnetic sensing element, a free magnetic layer composed of a Heusler alloy layer is disposed on a nonmagnetic layer that...
7308751 Magnetic head and method of manufacturing same, head suspension assembly and magnetic disk apparatus  
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of...
7301734 Longitudinal bias structure with improved magnetic stability  
A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is...
7301733 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory  
A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of...
7289304 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure  
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated...
7289303 Spin valve sensors having synthetic antiferromagnet for longitudinal bias  
Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer...
7287313 Method for preventing magnetic damage to a GMR head during back-end processing  
A method is provided for preserving the transverse biasing of a GMR (or MR) read head during back-end processing. In a first preferred embodiment, the method comprises magnetizing the longitudinal...
7284316 Method for forming a hard bias structure in a magnetoresistive sensor  
A method for forming a hard bias structure in a magnetoresistive sensor is disclosed. A magnetoresistive sensor having a soft magnetic bias layer, spacer layer, and a magnetoresistive layer, is...
7283335 Magnetic detecting element  
In a magnetic detecting element, ferromagnetic layers are formed on both side portions of a free magnetic layer through nonmagnetic intermediate layers, and second antiferromagnetic layers are...
7283334 Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives  
A magnetic head having a spin valve sensor that is fabricated utilizing an Al 2 O 3 , NiMnO, NiFeCr seed layer upon which a typical PtMn spin valve sensor layer structure is subsequently...
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