Matches 1 - 24 out of 24
Match Document Document Title
7450350 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned structure having segregated grains of a ferromagnetic material and additive Cu, Au or Ag  
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure, i.e., a structure with first (AP 1 ) and second (AP 2 )...
7446986 Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling  
A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of...
7446984 Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers  
A Magnetic Random Access Memory (MRAM) cell and array for storing data. The MRAM array includes a memory cell having a magnetic pinned layer, a magnetic free layer and a non-magnetic spacer or...
7446983 Magnetoresistive element, thin-film magnetic head, head gimbal assembly, and magnetic disk drive  
An MR element comprises: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive...
7446982 Pinning structure with trilayer pinned layer  
A magnetoresistive sensor having a trilayer structure for improved pinning. The pinned layer is exchange coupled with a IrMnCr AFM layer, and has a three ferromagnetic layer, the center one...
7443638 Magnetoresistive structures and fabrication methods  
Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted...
7443637 Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same  
A giant magnetoresistance (GMR) sensor with side longitudinal bias (LB) stacks is proposed for magnetic recording at ultrahigh densities. The GMR sensor extends from a read region into two side...
7441326 Manufacturing method of a magnetic sensor  
In a magnetic sensor, a lower terminal layer, a magnetosensitive layer, and a cover film are simultaneously patterned into substantially the same size. The opposing surface of the lower terminal...
7440239 Magneto-resistance effect element and reproducing head  
It is possible to obtain sensitivity which can achieve an excellent error rate with a high recording density. There are provided a magnetization free layer which has two opposed main surfaces, one...
7436638 Ferromagnetic pinning structure including a first section antiferromagnetically coupled to a pinned layer and a second section elongated relative to the first section in a stripe height direction  
A CPP magnetic sensor is disclosed with a ferromagnetic layer that extends in a first direction a first distance; a nonferromagnetic spacer layer that adjoins the ferromagnetic layer and extends in...
7436637 Magnetoresistive sensor having an improved pinning structure  
A magnetoresistive sensor having a hard magnetic layer extending from the stripe height of the pinned layer to assist in pinning the pinned layer. The pinned layer extends beyond the stripe height...
7433162 Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer  
An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an enhancement layer formed of a chemically-ordered...
7433161 Spin-valve element having fixed layer containing nano-oxide layer  
A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided...
7428128 High read output, high sensitivity magnetic sensing element  
A magnetic sensing element has pinned magnetic layers disposed on the two sides of a free magnetic layer in the track width direction with nonmagnetic conductive layers therebetween, and an...
7428127 CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element  
A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free...
7426097 Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces  
An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A...
7423849 Magnetoresistive (MR) elements having pinned layers with canted magnetic moments  
Magnetoresistive (MR) elements are disclosed that include pinned layers having canted magnetic moments. An MR element of the invention includes a first pinning layer, a first pinned layer, a first...
7423848 Process and structure to fabricate CPP spin valve heads for ultra-high recording density  
A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen...
7420788 GMR and MR enhancing seedlayers for self pinned spin valves  
A magnetic head includes a seed layer structure comprising Ta and NiFeCr seed layers; an antiparallel (AP) pinned layer structure formed above the NiFeCr seed layer; a free layer positioned above...
7418777 Method on manufacturing spin valve film  
A method of manufacturing a spin valve film, produces a large read out signal. After a completion of a film making process for forming a previous film of two films to be formed successively, but...
7417833 Magnetic recording and reproducing apparatus having element for correcting misaligned magnetization direction  
The invention provides a magnetic recording and reproducing apparatus having magnetic field applying unit applying a magnetic field to a magnetoresistive element to correct a misaligned...
7408747 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing  
An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure...
7397639 Magnetic detecting element provided with free layer having layered-ferri configuration  
A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness...
7394086 Magnetic sensor and manufacturing method therefor  
A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is...
Matches 1 - 24 out of 24