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7633699 |
CPP reader with phase detection of magnetic resonance for read-back
An apparatus includes a magnetically biased multilayer structure having a reference layer and a free layer separated by a spacer layer; a DC current source connected to the multilayer structure; an...
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7633132 |
Magnetic sensor and manufacturing method therefor
A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is...
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7621038 |
Method for fabricating a three terminal magnetic sensor for magnetic heads with a semiconductor junction
A method for fabricating a three terminal magnetic (TTM) sensor of a magnetic head according to one embodiment includes fabricating a P-type semiconductor material; fabricating an N-type...
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7623323 |
Magnetoresistive head and read/write separation-type magnetic head
Embodiments of the invention provide a reading head structure that ensures a stable magnetic moment of a pinned layer against a great external magnetic field, and minimizes the pinned-layer damage...
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7612969 |
Magnetic memory device and method of fabricating the same
A magnetic memory device includes a pinning layer, a pinned layer, an insulation layer, which are sequentially stacked on a semiconductor substrate. The magnetic memory device further includes a...
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7603763 |
Method for manufacturing a magnetoresistive multilayer film
A method for manufacturing a magnetoresistive multilayer film. An antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a...
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7602591 |
Exchange-coupled free layer with out-of-plane magnetization
A magnetoresistive element is provided as a spin valve having a synthetic free layer. More specifically, the synthetic free layer includes a low perpendicular anisotropy layer that is separated...
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7593195 |
Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of...
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7589939 |
Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
A magnetic sensor includes a single substrate, a conventional GMR element formed of a spin-valve film including a single-layer-pinned fixed magnetization layer, and a SAF element formed of a...
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7583480 |
Magnetoresistance effect element with nano-junction between free and pinned layers
A magnetoresistance effect element includes a free layer as a first ferromagnetic layer, a pinned layer as a second ferromagnetic layer, and at least one nano-junction provided between the free...
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7573685 |
GMR sensor having a capping layer treated with nitrogen for increased magnetoresistance
A magnetoresistive sensor having a Ta cap layer with nitrogen added in situ during deposition. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition...
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7564657 |
Magnetoresistive device, thin film magnetic head, head gimbal assembly and magnetic disk unit exhibiting superior magnetoresistive effect
Provided are a magnetoresistive device capable of obtaining a larger amount of resistance change and responding to a higher recording density and a thin film magnetic head comprising the...
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7561384 |
Magneto-resistive sensor having small track width and sensor height using stopper layer
A high output magneto-resistive sensor is provided by suppressing leftover resist mask after lift-off and generation of a fence, and by making it easy to remove the redepositions deposited on the...
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7554774 |
Magnetic resistance device and method of manufacturing the same
In a magnetic resistance device, and a method of manufacturing the same, the magnetic resistance device includes a pinning layer, a pinned layer, a nonmagnetic layer, and a free layer stacked on...
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7536772 |
Method of manufacturing a bottom spin valve with a laminated CoFe free layer
A method is given for the manufacture of a bottom spin valve (BSV) spin filter spin valve (SFSV) type read sensor. The sensor has a composite, ultra-thin (<20 Angstroms) laminated free layer...
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7538987 |
CPP spin-valve element
A CPP spin-valve element formed on a substrate including a free layer structure including at least one ferromagnetic layer and a pinned layer structure including at least one ferromagnetic layer....
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7535682 |
Magneto-resistance element and thin film magnetic head with improved heat reliability
A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an...
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7530160 |
Method for manufacturing a magnetoresistive sensor having improved antiparallel tab free layer biasing
A method for manufacturing a magnetoresistive sensor having improved free layer biasing and track width control. The method includes forming a ferromagnetic pinned layer, and depositing a...
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7525771 |
GMR spin-valve element evaluation method, magnetic head manufacturing method, and magnetic storage device
A method for evaluating a magnetized state of a pinned layer of a magnetoresistive spin-valve element used, together with a recording element, in a magnetic head, is provided. The method includes...
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7525772 |
Magnetoresistive device, magnetic reproducing head, and magnetic information reproducing apparatus
A magnetoresistive device includes a magnetoresistive film and a pair of electrodes for applying a sense current substantially perpendicularly to the magnetoresistive film. The magnetoresistive...
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7522390 |
Magnetoresistive effect element, and magnetic head and magnetic reproducing apparatus including the same
A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a...
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7522389 |
Magnetoresistance effect element comprising a nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same
A magnetoresistance effect element is composed of a first ferromagnetic layer, a second ferromagnetic layer, and at least one nano-contact portion formed between the first and second ferromagnetic...
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7518834 |
Method of manufacturing a magnetoresistive head with spin-valve film
For control of crystal grain size in a spin-valve film, a lithographic technique is needed which exhibits high productivity and enabling formation of a pattern at about 10 nm. In one embodiment of...
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7514117 |
Method and apparatus for manufacturing magnetoresistive element
The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating...
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7508042 |
Spin transfer MRAM device with magnetic biasing
The addition of segmented write word lines to a spin-transfer MRAM structure serves to magnetically bias the free layer so that the precessional motion of the magnetization vector that is set in...
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7505234 |
Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of...
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7502208 |
Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory
A giant magneto-resistive effect element includes a lamination layer structure portion ( 10 ) in which at least a free layer ( 4 ) the magnetization of which is rotated in response to an external...
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7500303 |
Method of fabricating a magnetic sensor on a wafer
A read head for a disk drive and a method of fabricating the read head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures to define the electrically...
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7497007 |
Process of manufacturing a TMR device
A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned...
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7494724 |
Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by...
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7477491 |
GMR device having an improved free layer
It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative...
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7477490 |
Single sensor element that is naturally differentiated
A differentiated sensor includes a pair of magnetic layers having magnetization directions that are substantially antiparallel in a quiescent state. At least one of the magnetic layers is a free...
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7475471 |
Method for fabricating a magnetic head
A GMR read head for a magnetic head, in which the hard bias layers are fabricated immediately next to the side edges of the free magnetic layer, and such that the midplane of the hard bias layer...
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7472469 |
Method for fabricating a magnetic head having a sensor stack and two lateral stack
A method is disclosed for fabricating a read sensor for a magnetic head for a hard disk drive having a read sensor stack and two lateral stacks. The method of fabrication includes forming lateral...
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7471492 |
Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose...
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7471491 |
Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element
A magnetic sensor includes a magnetoresistance element having a peak of a thermal fluctuation strength of magnetization under a magnetic field having a certain frequency, a frequency filter...
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7466523 |
Nanotube spin valve and method of producing the same
Present invention discloses novel designs of carbon nanotube spin valve structures for incorporation into magnetic storage and magnetic sensing devices, such as magnetic read head, MRAM, and...
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7453672 |
Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material
A magnetoresistive device with a spin valve formed from a stack of layers including at least two magnetic layers for which the relative orientation of their magnetization directions can vary under...
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7443638 |
Magnetoresistive structures and fabrication methods
Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted...
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7443636 |
Magnetic head having layered film with tilted crystalline grain structure
Embodiments of the invention implement a construction capable of reconciling high read output with high stability by improving the structures of magnetic films. In one embodiment, an inclined...
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7443004 |
Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
In a spin valve type element, an interface insertion layer ( 32, 34 ) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (...
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7443635 |
Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector
A multilayer film is placed on a subatrate. The multilayer film includes an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, and a free magnetic layer. The...
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7436636 |
Dual CPP GMR sensor with in-stack bias structure
A dual current perpendicular to plane (CPP) sensor having an in stack bias structure disposed between first and second free layers. The hard bias structure includes a plurality of magnetic layers...
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7433160 |
Magnetoresistive element and method of manufacturing the same
A magnetoresistive element is disclosed that includes a magnetoresistive film; a cap film configured to cover the magnetoresistive film and include a three-layer structure in at least a part...
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7428127 |
CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element
A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free...
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7423848 |
Process and structure to fabricate CPP spin valve heads for ultra-high recording density
A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen...
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7423847 |
Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an insulating layer with at least one aperture that confines the flow of sense current through the active...
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7420786 |
Arrangement of a magneto-resistance effect element having a surface contacting a side face of an electrode and magnetic memory using this arrangement
An area of an element can be made small and fluctuation in area can be reduced. A magneto-resistance effect element is provided with a first electrode with an end face; a magneto-resistance effect...
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7420787 |
Magnetoresistive sensor having a shape enhanced pinned layer
A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that...
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7417832 |
Magnetoresistive structure having a novel specular and filter layer combination
A method and system for providing a magnetoresistive structure is disclosed. The magnetoresistive structure includes a pinned layer, a nonmagnetic spacer layer, a free layer, a filter layer, a...
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