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Match Document Document Title
7389577 Method to fabricate an ESD resistant tunneling magnetoresistive read transducer  
A method to fabricate a tunneling magnetoresistive (TMR) read transducer is disclosed. An insulative layer is deposited on a wafer substrate, and a bottom lead is deposited over the insulative...
7385790 CPP-type giant manetoresistance effect element and magnetic component and magnetic device using it  
Disclosed is a CPP type giant magnetoresistance device ( 10, 20, 50 ) capable of exhibiting a giant magnetoresistance effect by spin dependent current in a direction perpendicular to a film plane...
7382586 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer  
A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with...
7379278 Magnetoresistance effect element, having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance  
A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a...
7378699 Magnetic head having a magnetoresistive element and highly polarized spin injection layer  
A magnetic head is provided with a giant magnetoresistive element, barrier layer, and highly polarized spin injection layer. The barrier layer is inserted between the giant magnetoresistive element...
7367111 Method for producing a spin valve transistor with stabilization  
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a...
7367110 Method of fabricating a read head having shaped read sensor-biasing layer junctions using partial milling  
A method for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard...
7365949 CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction  
A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR...
7365948 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film  
An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the...
7359161 Magnetic sensor that combines both CPP and CIP modes of operation  
A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are...
7355823 Ta based bilayer seed for IrMn CPP spin valve  
The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium...
7349185 Three terminal magnetic sensor for magnetic heads with a semiconductor junction  
The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to...
7345854 GMR sensor having a reference layer with movable magnetization  
A method for fabricating a spin-valve GMR sensor having a reference layer with a magnetic moment that moves in an opposite direction to that of the free layer in the presence of external magnetic...
7342751 Magnetoresistive effect having multiple base layers between an electrode and an antiferromagnetic layer, magnetic head, and magnetic recording device  
The magnetoresistive effect element comprises an electrode layer 12 of a crystalline material; a base layer 14 of a conductive amorphous material formed over the electrode layer 12 , an...
7336452 Patterned exchange bias GMR using metallic buffer layer  
In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to...
7336451 Magnetic sensing element containing half-metallic alloy  
A pinned magnetic layer 20 and a free magnetic layer 26 include a magnetic portion 17 and a magnetic sublayer 22 , respectively, each comprising a half-metallic ferromagnetic alloy. Since...
7333306 Magnetoresistive spin valve sensor with tri-layer free layer  
A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the...
7333302 GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance  
A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline...
7327539 CPP giant magnetoresistive head with large-area metal film provided between shield and element  
A CPP giant magnetoresistive (GMR) head includes lower and upper shield layers; and a GMR element disposed between the upper and lower shield layers and comprising a pinned magnetic layer, a free...
7325295 Structure/method to form bottom spin valves for ultra-high density  
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an...
7324311 Rie defined CPP read heads  
A magnetoresistive sensor having a trackwidth defined by AFM biasing layers disposed beneath a free layer of the sensor. The present invention provides a current in plane magnetoresistive sensor...
7312961 Magnetic head and method of manufacturing same, head suspension assembly and magnetic disk apparatus  
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of...
7312959 Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor  
At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are...
7310209 Magnetoresistive sensor having a high coercivity hard magnetic bias layer deposited over a metallic layer  
A magnetoresistive sensor having hard bias layers constructed of CoPtCrB, which high coercivity when deposited over crystalline materials such as an AFM layer or other sensor material. The bias...
7308751 Magnetic head and method of manufacturing same, head suspension assembly and magnetic disk apparatus  
A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of...
7307819 Magnetoresistive element magnetic head, magnetic recording apparatus, and magnetic memory  
A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on...
7307818 Method and system for providing a stable spin filter  
A method and system for providing a spin filter is disclosed. The method and system include providing a pinned layer, a free layer, and a conductive nonmagnetic spacer layer between the pinned...
7301734 Longitudinal bias structure with improved magnetic stability  
A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is...
7301733 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory  
A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of...
7295408 Dual type magnetic sensing element wherein ΔR×A in upstream part in flow direction of electric current is smaller than ΔR×A in downstream part  
In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be...
7295407 Magnetoresistance effect element, magnetic head and magnetic reproducing system  
A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free...
7289304 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure  
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated...
7289303 Spin valve sensors having synthetic antiferromagnet for longitudinal bias  
Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer...
7287313 Method for preventing magnetic damage to a GMR head during back-end processing  
A method is provided for preserving the transverse biasing of a GMR (or MR) read head during back-end processing. In a first preferred embodiment, the method comprises magnetizing the longitudinal...
7283334 Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives  
A magnetic head having a spin valve sensor that is fabricated utilizing an Al 2 O 3 , NiMnO, NiFeCr seed layer upon which a typical PtMn spin valve sensor layer structure is subsequently...
7283333 Self-pinned double tunnel junction head  
A thin dual magnetic tunnel junction head having a free layer and first and second antiparallel (AP) pinned layer structures positioned on opposite sides of the free layer, each of the AP pinned...
7280323 Magnetoresistance effect element and magnetic head  
A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one...
7280322 Magnetic sensor and magnetic head with the magnetic sensor  
Provided is a magnetic head having a magnetoresistive device which has high output and is best suited to high-recording-density magnetic recording/reading. A magnetic sensor having large output can...
7277262 CPP magnetoresistive head including a pair of shields and a sense current preamplifier  
A magnetic recording/reproducing apparatus has a magnetoresistive head having a magnetoresistive film through which a current is flowed in a direction substantially perpendicular to a film plane...
7277261 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system  
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is...
7274542 Magnetic sensor having a free layer containing a single magnetic domain  
A magnetic sensor includes a spacer having at least a nonmagnetic metal layer inserted between the upper shield layer and the longitudinal bias layers or between the upper shield layer and the...
7271698 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film  
A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled...
7270758 Method to improve ability to perform CMP-assisted liftoff for trackwidth definition  
A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and...
7268981 Spin valve sensor having antiferromagnetic (AFM) pinning layer structures formed in the end regions  
In one illustrative example, a spin valve sensor includes a free layer structure; an anti-parallel (AP) pinned layer structure which includes at least a first AP pinned layer; and a non-magnetic...
7268978 Self-pinned magnetic detecting element  
A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP...
7268977 Capping layers with high compressive stress for spin valve sensors  
A capping layer employed with a spin valve sensor includes a first capping layer, formed from a refractory metal, and a second capping layer formed from silicon. The interface between the refactory...
7264844 Forming oxide buffer layer for improved magnetic tunnel junctions  
A metal manganese oxide buffer layer is used to seed a barrier layer in a magnetic tunnel junction memory element having pinned and free magnetic layers. An alumina tunnel barrier layer is formed...
7259940 Thin-film magnetic head, head gimbal assembly, and hard disk drive  
A pair of domain control layers are disposed on both sides of the track width direction of the MR film so as to be separated from each other such that the MR film is held therebetween, and apply a...
7253994 Magnetic head, head suspension assembly and magnetic disk apparatus  
A magnetic head has a base, and a magneto-resistive device supported by the base. The magneto-resistive device includes a magneto-resistive layer formed on one surface side of the base, and a first...
7251110 GMR sensor having layers treated with nitrogen for increased magnetoresistance  
A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate...
Matches 1 - 50 out of 334 1 2 3 4 5 6 7 >