Matches 251 - 300 out of 329 < 1 2 3 4 5 6 7 >
Match Document Document Title
6580588 Resettable dual AP pinned valve sensor insensitive to sense current direction and having symmetrically balanced fields about a free layer  
A dual spin valve sensor is provided which includes a ferromagnetic free layer, first and second antiparallel (AP) pinned layer structures, a nonmagnetic conductive first spacer layer between the...
6580270 Magnetoresistive sensor or memory elements with decreased magnetic switch field  
A sensor (MRE) or memory element (ME) having a free ( 1, 2, 3 ) and a pinned (M p , 6 ) magnetic layer separated by a separation layer ( 5 ). The free layer comprises a sandwich structure...
6567244 Differential yoke type read head  
A read head, which has an air bearing surface (ABS), includes a yoke which has first and second legs which are interconnected at a location within the head at a distance d 1 from the ABS wherein...
6560077 CPP spin-valve device  
A spin-valve device of a CPP structure which has a high resistance, and which generates a high output signal with low current. The CPP spin-valve device including a spin-valve element having a...
6556390 Spin valve sensors with an oxide layer utilizing electron specular scattering effect  
The present invention comprises a magnetoresistive sensor including a cap layer, a free layer, a spacer layer, a pinned layer, an oxide layer, a pinning layer, a seed layer, and a substrate layer....
6552881 Spin valve sensor with magnetic and nonmagnetic layers for improving asymmetry and softness of a free layer structure  
A nonmagnetic conductive layer is provided on top of a free layer structure for at least counterbalancing sense current fields from conductive layers below the free layer structure so as to improve...
6548114 Method of fabricating a spin valve/GMR sensor having a synthetic antiferromagnetic layer pinned by Mn-alloy  
A method of fabricating a spin valve sensor includes sequentially depositing, without breaking vacuum, a seed layer and an antiferromagnetic layer. Sequentially depositing the seed layer and the...
6535363 Magnetic resistance effect type thin-film magnetic head and method for manufacturing the same  
A thin-film magnetic head in which has a spin-valve element and a pair of electrode layers that are electrically connected to both ends of the element in the direction of width. A tantalum film is...
6535362 Magnetoresistive device having a highly smooth metal reflective layer  
The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons...
6519120 Ap-pinned spin valves with enhanced GMR and thermal stability  
An SV sensor with the preferred structure Substrate/Seed/Free/Spacer/Pinned/AFM/Cap where the seed layer is a non-magnetic Ni—Fe—Cr or Ni—Cr film and the AFM layer is preferably Ni—Mn. The...
6515573 Method and system for providing edge-junction TMR utilizing a hard magnet as a pinned layer  
A method and system for providing a magnetoresistive sensor for reading data from a recording media is disclosed. The method and system include providing at least one barrier layer and a free layer...
6507447 Magnetic information storage device having a high-sensitivity magnetic sensor and a signal processing circuit processing an output of the high-sensitivity magnetic sensor  
A signal processing circuit of a spin-valve magnetic sensor includes a polarity detection circuit for detecting a polarity of an output signal produced by the magnetic sensor and a polarity control...
6504796 Magneto-optical head having thickness of the core same as a track width  
A magnetic head for reproducing a signal recorded on a recording medium, includes a substrate, a magnetic head core provided on the substrate, having a magnetic gap, and a magnetoresistance device...
6504362 Process of measuring slide-reading of abutted-junction read heads  
Side-reading of an abutted-junction magnetic transducer is measured by constructing at least one microtrack having a transition density. The transducer is moved relative to the microtrack to...
6462641 Magnetoresistor with tunnel effect and magnetic sensor using same  
Tunnel effect magnetoresistance comprising, in the form of a stack: a first layer ( 12 ) of free magnetisation magnetic material, a “barrier” layer ( 16 ), composed of an electrically...
6460243 Method of making low stress and low resistance rhodium (RH) leads  
A method of making rhodium (Rh) lead layers for a read sensor comprises a first step of obliquely ion beam sputtering the rhodium (Rh) lead layer followed by a second step of annealing. This method...
6462917 Magnetoresistive sensor, a thin film magnetic head, a magnetic head device, and a magnetic disk drive device  
A magnetoresistive sensor according to the present invention has a spin-valve film structure which includes an underfilm, a first ferromagnetic film, a conductive film, a second ferromagnetic film,...
6456468 Magnetoresistance effect element, and magnetoresistance effect sensor and magnetic information recording and playback system using same  
The magnetoresistance effect element according to the present invention comprises an anti-ferromagnetic layer, a fixed magnetic layer, a non-magnetic layer and a free magnetic layer laminated...
6452762 Magneto-resistive element and production method thereof, magneto-resistive head, and magnetic recording/reproducing apparatus  
The present invention provides a magneto-resistive (MR) element comprising: a first magnetic layer 1 provided on a substrate; a non-magnetic layer 3 arranged to be in contact with the first...
6452385 Magnetoresistive effect sensor with double-layered film protection layer  
A manufacturing method of a MR sensor includes forming a MR multi-layered structure of a first anti-ferromagnetic material layer, a first ferromagnetic material layer (pinned layer) which receives...
6430012 Magnetoresistance effect film and magnetoresistance effect type head having specified antiferromagnetic promote layer  
In a spin valve type magnetoresistance effect film, an antiferromagnetization promote layer is formed on a surface of an antiferromagnetic layer remote from a surface thereof abutting a...
6396668 Planar double spin valve read head  
A planar spin valve read head comprises a top and a bottom shield, and a first and a second gap layer. The first gap layer is positioned adjacent to the bottom shield. The second gap layer is...
6396671 Ruthenium bias compensation layer for spin valve head and process of manufacturing  
A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR...
6369992 Yoke-type head with magneto-resistance effect film recessed from medium facing surface and extending across magnetic gap  
A magneto-resistance effect head records and reproduces recorded magnetic material. The magneto-resistance effect head has a magneto-resistance effect film connected to a pair of leads....
6341052 Magnetoresistive element including a silicon and/or a diffusion control layer  
An MR (magnetoresistive) effect element includes a free magnetic layer having a small coercive force and therefore reduces the hysteresis of the R-H loop. The magneoresistive element includes a...
6317302 Thin-film magnetic read head with locally reduced exchange coupling  
A thin-film magnetic read head device comprises an end face extending in a first direction, in which a magnetic information carrier is movable with respect to the magnetic head device, and in a...
6317299 Seed layer for improving pinning field spin valve sensor  
A seed layer is provided for a pinning layer which increases the pinning field H PIN between a pinning layer and a pinned layer of a spin valve sensor. In an example the seed layer structure...
6313973 Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same  
A magnetoresistive element comprises an exchange coupling film having a under layer, an antiferromagnetic film and a ferromagnetic film, which are laminated in that order, the under layer including...
6295175 Apparatus for recognizing spin valve head failure due to pin layer magnetic field offset  
When a pin layer magnetic field offset judgment unit judges that a magnetic field in a pin layer of a spin valve head through which a sense current flows in the interference direction has been...
6256176 Highly sensitive spin valve heads using a self-aligned demag-field balance element  
A magnetic read head (30) for use in a magnetic data storage and retrieval system has a first current contact (40), a second current contact (42), a magnetoresistive read sensor (34), and a...
6249405 Magnetic head including magnetoresistive element  
A magnetic storage/read system includes a recording medium having tracks, and a magnetic head, including a magnetoresistive element, which reads a magnetic field from the recording medium. The...
6222707 Bottom or dual spin valve having a seed layer that results in an improved antiferromagnetic layer  
A system and method for providing a spin valve is disclosed. The spin valve is formed on a substrate. In one aspect, the method and system include providing a seed layer including NiFe above the...
6219207 Read sensor having high conductivity multilayer lead structure with a molybdenum layer  
First and second lead layer structures are provided for a read sensor which have low resistance, hardness and reliability at operating temperatures of the read head. Each lead layer structure...
6219208 Dual spin valve sensor with self-pinned layer specular reflector  
A dual GMR or dual spin valve sensor has a self-pinned layer which has its magnetic moment pinned perpendicular to an air bearing surface by sense current fields from conductive layers in the dual...
6219211 Current-pinned, current resettable soft AP-pinned spin valve sensor  
A soft anti-parallel (AP)-pinned spin valve (SV) sensor comprising an AP-pinned layer separated from a ferromagnetic free layer by a non-magnetic electrically conducting spacer. The AP-pinned layer...
6208491 Spin valve with improved capping layer structure  
A capping structure is provided for a spin valve sensor which improves its magnetoresistive coefficient (dr/R). In one embodiment the capping structure includes a first layer of cobalt iron (CoFe)...
6205008 Magnetic-resistance device, and magnetic head employing such a device  
A magneto-resistance device comprising two layers of ferromagnetic material mutually separated by at least one interposed layer of non-ferromagnetic material, in which at least one of the layers of...
6201671 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor  
A bottom spin valve sensor employs a seed layer for a nickel oxide (NiO) antiferromagnetic pinning layer for the purpose of increasing magnetoresistance of the sensor (dR/R). The spin valve sensor...
6201465 Magnetoresistive sensor and its manufacturing method  
A magnetoresistive sensor is fabricated as follows. First of all, first antiferromagnetic layers are created on the upper surfaces on both sides of a lower-gap layer, sandwiching a track width on...
6201672 Spin valve sensor having improved interface between pinning layer and pinned layer structure  
A bilayer interlayer comprising first and second layers of cobalt iron (CoFe) and nickel iron (NiFe) respectively is located between a nickel oxide pinning layer and a cobalt iron (CoFe) pinned...
6194896 Method of controlling magnetic characteristics of magnetoresistive effect element and of magnetic head with the element, magnetic head device with magnetoresistive effect element, and magnetic disk unit with the device  
A method of controlling magnetic characteristics of a MR element and a method of controlling magnetic characteristics of a magnetic head with the MR element utilizing exchange coupling...
6185078 Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap  
An antiferromagnetic stabilization scheme is employed in a magnetic head for magnetically stabilizing a free layer of a spin valve. This is accomplished by utilizing an antiferromagnetic oxide film...
6166539 Magnetoresistance sensor having minimal hysteresis problems  
The present invention provides a method and apparatus for utilizing magnetoresistance devices for the measurement of weak magnetic fields. An oscillating excitation magnetic field is applied to a...
6141191 Spin valves with enhanced GMR and thermal stability  
An SV sensor with the preferred structure Substrate/Seed/Free/Spacer/Pinned/AFM/Cap where the seed layer is a non-magnetic Ni--Fe--Cr or Ni--Cr film and the AFM layer is preferably Ni--Mn. The...
6134090 Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer  
A spin valve sensor is constructed with an electrically conductive antiferromagnetic pinning layer. A first ferromagnetic layer is placed proximate the pinning layer. A second ferromagnetic layer...
6118621 Magnetoresistance effect head having a pair of protrusions, steps or depressions between the detecting and nondetecting areas for improved off-track characteristics  
A magnetoresistance effect head includes a magnetic film for detecting a signal magnetic field. The magnetic film has substantially flat upper and lower surfaces, a detecting area for detecting the...
6115224 Spin-valve type thin film element and its manufacturing method  
The object of the present invention is to solve the problems that inductive magnetic anisotropy of the free magnetic layer can not be directed along the track width direction because all the layers...
6111729 Magnetoresistance effect element  
A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic...
6104189 Magnetoresistive sensor having at least one layer with a pinned magnetization direction  
A magnetoresistive spin valve sensor is described. Such a sensor is also known as a GMR sensor or giant magnetoresistive sensor. The layers (24, 26, 28) of the sensor are mounted on a substrate...
6084405 Transducer utilizing giant magnetoresistance effect and having a ferromagnetic layer pinned in a direction perpendicular to a direction of a signal magnetic field  
A magnetoresistive transducer showing a giant magnetoresistance effect has a multi-layer structure including first and second ferromagnetic layers separated by a non-magnetic layer. The second...
Matches 251 - 300 out of 329 < 1 2 3 4 5 6 7 >