Matches 201 - 250 out of 329 < 1 2 3 4 5 6 7 >
Match Document Document Title
6828260 Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device  
A method of treating an electrically non-conductive tunnel barrier layer through an overlayer of a tunnel junction device with ultra-violet light is disclosed. The method includes irradiating a...
6829121 Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element  
A magnetoresistive film includes a nonmagnetic film, and a structure in which magnetic films are formed on the two sides of the nonmagnetic film. At least one of the magnetic films is a...
6820322 Method of making a spin valve sensor with a free layer structure sputter deposited in a nitrogen atmosphere  
A method makes a spin valve sensor of a magnetic read head which includes the steps of forming a ferromagnetic pinned layer structure that has a magnetic moment, forming a pinning layer exchange...
6816346 Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias  
As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause...
6798624 Magnetization sensor for sensing the write field characteristics of a perpendicular or longitudinal recording head  
A magnetization sensor for sensing write field characteristic of a perpendicular or longitudinal recording head such as may be used with a disc drive, and a method of manufacture therefor are...
6798625 Spin-valve magnetoresistance sensor and thin-film magnetic head  
The present invention provides a spin-valve magnetoresistance sensor in which are formed, on top of the substrate, free layers, and pinned layers, enclosing a nonmagnetic spacer layer, and an...
6795279 Spin valve structures with specular reflection layers  
This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic...
6788499 Spin valve sensor with insulating and conductive seed layers  
A spin valve sensor with insulating and conductive seed layers is provided. The sensor comprising Al 2 O 3 /Ni—Cr—Fe/Ni—Fe/Co—Fe/Cu/Co—Fe/Ru/Co—Fe/Pt—Mn films is formed by depositing...
6785101 Overlaid lead giant magnetoresistive head with side reading reduction  
The first and second side surfaces of either a bottom spin valve sensor or a top spin valve sensor are notched so as to enable a reduction in the magnetoresistive coefficient of side portions of...
6781801 Tunneling magnetoresistive sensor with spin polarized current injection  
A tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode has a plurality of layers including a spin valve and a barrier layer. The spin valve is...
6779248 Method of manufacturing a lead overlay bottom spin valve with improved side reading  
In bottom spin valves of the lead overlay type the longitudinal bias field that stabilizes the device tends to fall off well before the gap is reached. This problem has been overcome by providing a...
6775110 Magnetoresistance effect device with a Ta, Hf, or Zr sublayer contacting an NiFe layer in a magneto resistive structure  
A magnetoresistance effect device has the basic structure of substrate/sublayer/NiFe layer/CoFe layer/non-magnetic layer/fixed magnetic layer/antiferromagnetic layer. The sublayer may be Ta at a...
6762915 Magnetoresistive sensor with oversized pinned layer  
A magnetoresistive stack for use in a magnetic read head has a plurality of layers including a ferromagnetic free layer, a ferromagnetic pinned layer, and an antiferromagnetic pinning layer. The...
6759120 Magnetoresistive film, magnetoresistive head, information regeneration apparatus and magnetoresistive film manufacture method  
There is disclosed a magnetoresistive film in which increase of a coupling field accompanying thickness reduction of a middle layer is inhibited. The magnetoresistive film is a multilayered film...
6756128 Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier  
A low resistance magnetic tunnel junction device, such as a memory cell in a nonvolatile magnetic random access memory (MRAM) array or a magnetoresistive read head in a magnetic recording disk...
6757143 Magnetoresistive effect element, its manufacturing method, magnetic head, magnetic reproducing apparatus, and magnetic memory  
In a magnetoresistive effect element, at least one of electrodes for supplying a current perpendicularly to the film plane of a magnetoresistive effect film is narrower than the distance between...
6757142 Magnetoresistive effect element with a magnetic sensing region and outside regions thereof, and manufacturing method of the element  
A MR element with a magnetic sensing region and outside regions thereof which locate outside the magnetic sensing region along a track width direction, includes a multi-layered structure with an...
6754053 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus  
A magnetoresistance effect film including a magnetically pinned layer, a non-magnetic intermediate layer and a magnetically free layer has sidewall layers covering at least side surfaces of the...
6735060 Spin valve sensor with a metal and metal oxide cap layer structure  
A cap layer structure is provided with a first layer composed of a metal and a second cap layer composed of a metal oxide. The first cap layer reflects conduction electrons back into the mean free...
6735056 ELECTRON DEVICE COMPOSED OF LAMINATED LAYERS WITH A REGION BETWEEN TWO OF THE LAYERS COMPOSED OF METAL OR METAL ALLOY SELECTED TO BE A COMBINATION OF MATERIALS FROM WHICH THE LAYERS ARE MADE WITH A COVER FILM OVER END FACES OF THE LAYERS  
An electron device includes a first layer formed of a metal or metal alloy and a second layer adjoining the first layer and formed of a metal or metal alloy different from that of the first layer....
6731478 Magnetoresistive effect head  
A slider includes an air-introducing plane, a groove, an air flow-out end, and a thin-film magnetic head formed on the air flow-out end. The thin-film magnetic head includes a magnetoresistive...
6731477 Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabrication  
Disclosed is a system and method for forming a current-perpendicular-to-plane (CPP) spin-valve sensor with one or more metallic oxide barrier layers in order to provide a low junction resistance...
6728055 Method and apparatus for performing spin valve combined pinned layer reset and hard bias initialization at the HGA level  
The present invention provides a method and apparatus for performing automated spin valve combined pinned layer reset and hard bias initialization at the head gimbal assembly level. The reset...
6724582 Current perpendicular to plane type magnetoresistive device, magnetic head, and magnetic recording/reproducing apparatus  
A current perpendicular to plane type magnetoresistive device has a magnetoresistive film, a pair of electrodes which allow a sense current to flow through the magnetoresistive film in a...
6721145 Method for initializing antiferromagnetic layers in a spin valve magnetic sensor  
A method of initializing a magnetic sensor having two antiferromagnetic layers is described. The method takes advantage of the spin flop effect such that the two antiferromagnetic layers may be...
6721142 Non-corrosive GMR slider for proximity recording  
A slider ( 34 ) for reading data from a disk surface ( 80 ), the slider ( 80 ) including a magneto-resistive head ( 36 ). The head ( 36 ) includes a transducer ( 58 ) having a stack of layers ( 59...
6716537 Magnetoresistive element having multilayered film capable of effectively conducting a detecting current for detecting external magnetic field and method for making the same  
A magnetoresistive element includes a multilayered film comprising a magnetic detecting layer having a magnetoresistive effect, a pair of first antiferromagnetic layers in contact with the magnetic...
6709767 In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture  
Disclosed is a spin-valve sensor employing one or more in-situ oxidized films as cap and/or gap layers in order to achieve an increased GMR coefficient and improved thermal stability. A fabrication...
6700754 Oxidized copper (Cu) spacer between free and pinned layer for high performance spin valve applications  
A spin valve sensor system and method for fabricating the same is provided. Included is a free layer and a pinned layer with a spacer layer disposed between the free layer and the pinned layer....
6700761 Magnetic sensor  
A magnetic sensor for reproducing information recorded on a magnetic recording medium senses an external magnetic field using a spin-filtered sensor current flowing through a non-magnetic layer.
6700720 Ultrafast magnetization reversal  
A scheme for ultrafast magnetization reversal in an in-plane magnetized layer ( 3 ) is disclosed. For that, an external magnetic field {right arrow over (H)} ex is applied such that the...
6686068 Heterogeneous spacers for CPP GMR stacks  
A CPP magnetoresistive sensor with a spacer layer made of a heterogeneous material, which is composed of conductive grains within a highly resistive matrix, has a high resistance. The conductive...
6669787 Method of manufacturing a spin valve structure  
The invention relates to a method of manufacturing a spin valve structure ( 1 ) of the GMR-type. Such a structure includes a stack of a magnetic layer ( 11 a 11 b ), a nonmagnetic layer ( 15 ) and...
6657828 Magnetic transducer with a higher rate and larger magnitude of resistance change  
Provided are a magnetic transducer having a higher rate of resistance change and a larger magnitude of resistance change and having better stability of properties, and a thin film magnetic head. A...
6650598 Magnetic head having magnetoresistance device and recording/reproducing apparatus incorporating the same  
A magnetic head for reproducing a signal recorded on a recording medium, includes a substrate, a magnetic head core provided on the substrate, having a magnetic gap, and a magnetoresistance device...
6643915 Method of making read head spin valve sensor with triple antiparallel coupled free layer structure  
A triple antiparallel (AP) coupled free layer structure is located between first and second pinned layer structures in a dual spin valve sensor. The triple AP coupled free layer structure includes...
6639765 Magnetoresistive element and magnetoresistive device using the same  
A magnetoresistive element with an improved magnetoresistive effect achieved by interposing a titanium nitride layer between a substrate and a spinel-type magnetic substance is provided. The...
6636392 Thin-film magnetic head with magnetoresistive effect element  
A thin-film magnetic head with an MR element, includes an MR film, under films each having a multilayer structure with a first under layer and a second under layer laminated on the first under...
6633465 Magnetoresistive element  
A magnetoresistive element includes a first antiferromagnetic film, a first magnetic film having a magnetization direction fixed by magnetic coupling with the first antiferromagnetic film, a second...
6633464 Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system  
A magnetoresistive (MR) device includes a synthetic antiferromagnetic (AFM) layer having an Fe/FeSi/Fe construction. A first Fe layer of the synthetic AFM layer has a magnetization substantially in...
6624985 Pinning layer seeds for CPP geometry spin valve sensors  
A CPP geometry spin valve sensor for sensing magnetically recorded information on a data storage medium includes an electrically conductive, multilevel seed layer that interfacially engages a...
6621667 Giant magnetoresistive sensor with a multilayer cap layer  
A giant magnetoresistive spin valve for use in a magnetic read head includes a ferromagnetic free layer and a multilayer cap layer. The free layer has a rotatable magnetic moment. The multilayer...
6621100 Polymer-, organic-, and molecular-based spintronic devices  
This invention relates to organic based spintronic devices, and electronic devices comprising them, including spin valves, spin tunnel junctions, spin transistors and spin light-emitting devices....
6614629 Thin film magnetic head providing an essentially warp-free upper shield layer and floating magnetic head using the same  
The present invention provides a thin film magnetic head which is prevented from producing a great step in an upper shield layer and which can decrease the probability of a short circuit between...
6606782 Method of forming a continuous free layer spin valve sensor with patterned exchange underlayer stabilization  
To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for...
6603677 Three-layered stacked magnetic spin polarization device with memory  
A magnetic device including at least a memory cell having a first magnetic layer with a fixed magnetization direction. The first magnetic layer spin polarizes a writing current of electrons. The...
6599401 In-plane anisotropic tri-layered magnetic sandwich structure with large magnetoresistance effect  
Uniaxial magnetic anisotropy was found in the Fe/Co/Cu/Co magnetoresistive structures deposited on Si ( 100 ) substrates. Samples magnetized along an easy anisotropy axis showed extremely sharp...
6591479 Production method for a spin-valve type magnetoresistive element  
A production method for a spin-valve type magnetoresistive element comprising laminating an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic electrically conductive layer, a free...
6590750 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices  
Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the...
6587316 Spin-valve type thin film magnetic element  
The relation of (RS 1 /H 1 )/(Rsg/Hg)≦0.02 is valid when the extending length in the vertical direction from an opposed face to an magnetic recording medium toward the inside of the electrode...
Matches 201 - 250 out of 329 < 1 2 3 4 5 6 7 >