Matches 151 - 200 out of 329 < 1 2 3 4 5 6 7 >
Match Document Document Title
7054114 Two-axis magnetic field sensor  
A ferromagnetic thin-film based magnetic field sensor with first and second sensitive direction sensing structures each having a nonmagnetic intermediate layer with two major surfaces on opposite...
7050273 Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon  
A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous...
7046489 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system  
There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be...
7042685 Suppression of thermally activated magnetization fluctuations in magnetoresistive elements via spin momentum transfer  
A system and method of reducing noise due to thermally activated spin waves in a magnetoresistive (MR) element is disclosed. The MR element includes a free layer, a reference layer, and a spacer...
7040005 Process of making a GMR improvement in CPP spin valve head by inserting a current channeling layer (CCL)  
A method of fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor stack, wherein the parasitic resistance of the high-resistance antiferromagnetic (AFM) pinning...
7038890 Current perpendicular to the planes (CPP) sensor with a highly conductive cap structure  
A magnetic read head has a current perpendicular to the planes (CPP) sensor with a top cap layer that is ruthenium (Ru) or rhodium (Rh) or a top cap layer structure which includes a first layer of...
7026671 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device  
A magnetoresistive effect element ( 1 ) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer ( 5 ) and magnetization free layer ( 7 )) is opposed to each...
7023310 Method for manufacturing magnetic sensor, magnet array used in the method, and method for manufacturing the magnet array  
A magnetic sensor includes eight SAF-type GMR elements. Four of the GMR elements detect a magnetic field in the direction of the X-axis and are bridge-connected to thereby constitute an X-axis...
7022383 Exchange bias structure for abutted junction GMR sensor  
Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the...
7016163 Magnetic field sensor  
A spin valve GMR sensor configured in a bridge configuration is provided. The bridge includes two spin valve element pairs. The spin valve elements include a free layer, a space layer, a pinned...
7016168 Method of increasing CPP GMR in a spin valve structure  
A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral...
7008704 Magnetoresistance effect film and spin valve reproducing head  
The spin valve reproducing head has a narrow track width and high stability. The spin valve reproducing head comprises: a base layer; a magnetoresistance effect film having a magnetic sensing...
6993827 Method of making a bottom spin valve  
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an...
6995959 Integrated spin valve head  
Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high...
6988308 Method of initializing hard bias of a magnetic read head  
Hard biasing of a magnetoresistive sensor or a spin valve sensor in a magnetic read head is initialized by repeatedly applying a magnetic field to the hard biasing at any level of fabrication of...
6989974 Magnetic recording/reproducing apparatus using a GMR head  
A highly reliable magnetic recording/reproducing apparatus is provided. In the magnetic recording/reproducing apparatus, a spin-valve film is used as a magnetic sensor element for detecting...
6989973 Spin filter bottom spin valve head with continuous spacer exchange bias  
A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al 2 O 3 . A key feature is...
6987652 Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same  
The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed...
6983531 Spin valve head having lead overlay  
A GMR read head is described. The device comprises a spin valve stack whose top layer is a first capping layer. On the first capping layer are two additional layers, a lead overlay layer and a...
6982932 Recording/reproducing head and recording/reproducing apparatus incorporating the same  
A magnetic head for reproducing a signal recorded on a recording medium, includes a substrate, a magnetic head core provided on the substrate, having a magnetic gap, and a magnetoresistance device...
6982854 Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus  
In the present invention, a thin film whose main component is a metal having a specific resistance of 4 μΩ·cm to 200 μΩ·cm is used as a nonmagnetic layer of a so-called CPP-GMR element....
6970332 Magnetoresistive head with spin valve film magnetic sensor element  
An improvement in the corrosion resistance of a magnetoresistive head is aimed for, and a high magnetoresistivity ratio is maintained. In a magnetoresistive head equipped with, as a magnetic sensor...
6961223 Spin-valve thin-film magnetic element without sensing current shunt and thin-film magnetic head including the same  
A spin-valve thin-film magnetic element includes a laminate including a free magnetic layer and a pinned magnetic layer. A pair of hard bias layers is provided on both sides of the laminate to...
6960397 Magnetoresistance device  
Provided is a magnetoresistance device. The device includes a substrate, a lower layer formed on the substrate, and a magnetoresistance structure formed on the lower layer, and the lower layer is...
6954341 Magneto-resistive sensor with oxidization-resistant conductive layer between cap layer and electrode overhang  
A magneto-resistive magnetic sensor has an overlay-type structure and includes a cap layer on a top surface of a magneto-resistive structure and a pair of electrodes provided on said cap layer with...
6944939 Method for forming a GMR sensor having improved longitudinal biasing  
A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is...
6937448 Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures  
A magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed...
6934130 Magnetic device having shaped ferromagnetic film  
A unit element of a magnetic device or a ferroelectric device and magnetic particles of a magnetic recording medium are provided. The outline of the unit element and the magnetic particles is...
6927949 Spin valve head with reduced element gap  
This invention teaches a way for the shield to shield (S 1 -S 2 ) distance of a magnetic read head to be reduced. The key feature is that the upper and lower dielectric layers D 1 and D 3 , which...
6917492 Magnetoresistive element and method for manufacturing the same and nonvolatile memory including the same  
A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition...
6907655 Method for manufacturing a spin valve having an enhanced free layer  
A spin valve sensor is provided with a negative ferromagnetic coupling field −H FC for properly biasing a free layer and a spin filter layer is employed between the free layer and a capping...
6909583 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures  
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is...
6903907 Magnetic sensing element having specular layer  
A specular layer and a nonmagnetic layer are provided on a central portion of a free magnetic layer, and ferromagnetic layers and second antiferromagnetic layers are provided on both end portions...
6903904 CPP GMR synthetic spin valve enhancement  
In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This...
6896974 Magnetic field sensor and magnetic disk apparatus  
A magnetic field sensor has a pair of magnetic shields serving as a negative electrode and a positive electrode, respectively, a magnetoresistive element arranged between the pair of magnetic...
6893741 Magnetic device with improved antiferromagnetically coupling film  
The invention is a magnetic device, i.e., a magnetoresistive sensor or a magnetic tunnel junction device, that has a ferromagnetic structure of two ferromagnetic layers antiferromagnetically...
6891704 Tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier layer  
A method of making provides a smooth surface of a pinned or free layer interfacing a barrier layer in a tunnel junction sensor wherein the smooth surface is an oxidized monolayer of the pinned or...
6888704 Method and system for providing high sensitivity giant magnetoresistive sensors  
A method and system for providing a magnetoresistive sensor and a read head that includes the magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a...
6888702 Thin film magnetic head device  
In a thin film magnetic head device including a reading giant magneto-resistive thin film magnetic head element whose electric equivalent circuit is expressed by a series circuit of an equivalent...
6885527 Process to manufacture a top spin valve  
Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high...
6882509 GMR configuration with enhanced spin filtering  
Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of...
6879013 Amplifiers using spin injection and magnetic control of electron spins  
Ultrafast solid state amplifiers of electrical current, including power amplification devices, use injection of spin-polarized electrons from a magnetic region into another magnetic region through...
6879512 Nonvolatile memory device utilizing spin-valve-type designs and current pulses  
A memory device includes a plurality of memory elements each having: an antiferromagnetic layer, a first pinned layer coupled to the antiferromagnetic layer, a nonmagnetic spacer layer coupled to...
6870711 Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices  
A pinned/pinning layer configuration of the form: AP1/coupling bilayer/AP2/AFM, suitable for use in a CIP or CPP GMR sensor, a TMR sensor or an MRAM element, is found to have improved magnetic...
6867951 Spin valve magnetic properties with oxygen-rich NiO underlayer  
In a spin valve, an underlayer is made of oxygen-rich nickel oxide to enhance the giant magnetoresistive ratio (ΔR/R). The oxygen-rich nickel oxide film is made using reactive sputtering of a...
6866751 Method of setting self-pinned AP pinned layers with a canted field  
A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally...
6857180 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
6850393 Magnetic head including a magneto resistive film connected to a yoke portion  
In a yoke type reproducing magnetic head, a magnetoresistance effect film can be arranged in the vicinity of a medium facing surface, so that sensitivity is improved. The yoke type reproducing...
6842969 Process for manufacturing a magnetic read head  
In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to...
6833981 Spin valve magnetic head with three underlayers  
A spin valve magnetic head, providing on a substrate, a laminated structure that has an antiferromagnetic layer, fixation layer, non-magnetic layer and unconstraint layer, and having a first...
Matches 151 - 200 out of 329 < 1 2 3 4 5 6 7 >