Matches 101 - 150 out of 330 < 1 2 3 4 5 6 7 >
Match Document Document Title
7218484 Magnetoresistance effect element, magnetic head, and magnetic reproducing apparatus  
A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic...
7212383 Magnetic sensing element including a pair of antiferromagnetic layers separated by spacer section in track width direction and method for fabricating same  
Disclosed are a magnetic sensing element in which side reading can be prevented, read sensitivity can be improved, and gap narrowing is enabled, and a method for fabricating the same. A magnetic...
7201827 Process and structure to fabricate spin valve heads for ultra-high recording density application  
A method for forming a bottom spin-valve GMR sensor having ultra-thin layers of high density and smoothness and possessing oxygen surfactant layers as a result of the layers being sputtered in a...
7196876 Method to make abutted junction GMR head without lead shunting  
A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead...
7196877 Magnetoresistive element, magnetoresistive head and magnetic reproducing apparatus  
A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer, a magnetization free layer, and a nonmagnetic intermediate layer. A magnetization direction of the...
7193821 Thin film magnetic head and method for manufacturing the same  
The present invention provides a thin film magnetic head and a method of manufacturing the same in which a magnetic sensitive layer can be formed as a single magnetic domain while adapting the head...
7193822 Thin film magnetic head, head gimbal assembly, and hard disk drive  
At both end portions of at least a soft magnetic layer of a magneto-resistive effect film, a pair of bias magnetic field applying layers are disposed for applying a longitudinal bias magnetic field...
7190557 Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers  
A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer...
7184247 Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same  
A magnetoresistanee effect element comprises a free layer composed of a ferromagnetic layer, a pinned layer composed of a ferromagnetic layer, and a layer disposed between the free layer and the...
7180714 Apparatus for providing a ballistic magnetoresistive sensor in a current perpendicular-to-plane mode  
A method and apparatus for providing a ballistic magnetoresistive sensor in a current perpendicular-to-plane mode is disclosed. A nickel nano-contact is provided in a current perpendicular-to-plane...
7180713 Magnetoresistive element  
A magnetoresistive element that detects a change of magnetoresistance by giving a sense current in the thickness direction of a magnetoresistive effect film including at least a base layer, a free...
7173796 Spin valve with a capping layer comprising an oxidized cobalt layer and method of forming same  
In one illustrative example of the invention, a spin valve sensor of a magnetic head has a sensor stack structure which includes a free layer structure and an antiparallel (AP) pinned layer...
7173797 Thin-film magnetic head  
The thin-film magnetic head of the present invention is a CPP type head and comprises an anti-ferromagnetic layer, a pinned layer, a free layer, and a nonmagnetic layer disposed between the pinned...
7170723 Magnetic disk apparatus using magnetic head having magnetoresistive film  
A magnetic disk apparatus has a magnetic recording medium including a recording layer formed on a nonmagnetic substrate, and a magnetic head including a magnetoresistive film arranged above the...
7162791 Method of manufacturing integrated spin valve head  
Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting...
7159304 Method of manufacturing a spin-valve giant magnetoresistive head  
Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a...
7161773 High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS)  
Several embodiments of a sense current perpendicular to the planes of the sensor (CPP) and flux guide type of read head has a gap between first and second shield layers at an air bearing surface...
7158353 Magnetoresistive sensor having specular sidewall layers  
A transducing head includes a multilayered magnetoresistive sensor having an air bearing sidewall opposite aback sidewall and a first sidewall opposite a second sidewall. A specular layer is...
7152304 Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
7150093 Method of manufacturing magnetic recording GMR read back sensor  
A method of initializing a magnetic sensor and storage system implementing such a magnetic sensor. The method includes heating and cooling dual antiferromagnetic layers in the presence of a...
7145754 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of oxygen  
A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a...
7140096 Method of manufacturing a magnetoresistance effect device  
A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second...
7134186 Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor  
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing...
7134185 Method of making narrow track width magnetoresistive sensor  
A method and system for forming a microscopic transducer are described. The method and system include forming a plurality of adjoining sensor layers. The sensor layers include a first magnetically...
7133264 High resistance sense current perpendicular-to-plane (CPP) giant magnetoresistive (GMR) head  
A current-perpendicular-to-plane (CPP) spin valve (SV) sensor and fabrication method with a contiguous junction type geometry that increases sensor resistance by up to two orders of magnitude over...
7132175 GMR magnetic detecting element comprising current limiting layer provided in free magnetic layer and method of manufacturing the detecting element  
The present invention provides a CPP-type spin-valve magnetic detecting element permitting a decrease in an effective element area even with a large optical element area. A current limiting layer...
7130164 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance  
A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a...
7130163 Magnetoresistance effect element  
There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The...
7126797 Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer  
A magnetic sensor includes a pinned magnetic layer having first and second magnetic sublayers sandwiching a nonmagnetic metal layer. The nonmagnetic metal layer contains at least one of Ru, Re, Os,...
7123453 Exchange coupling film and magnetoresistive element using the same  
A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased...
7116530 Thin differential spin valve sensor having both pinned and self pinned structures for reduced difficulty in AFM layer polarity setting  
A dual/differential spin valve sensor of a magnetic head includes a first spin valve having an antiparallel (AP) “pinned” layer structure and a second spin valve having an AP “self-pinned”...
7116531 Lead overlay bottom spin valve with improved side reading  
In bottom spin valves of the lead overlay type the longitudinal bias field that stabilizes the device tends to fall off well before the gap is reached. This problem has been overcome by inserting...
7116529 Magnetoresistive element in which pinned magnetization layers have antiparallel pinned directions, magnetic head and magnetic recording/reproducing apparatus  
A magnetoresistive element has a magnetoresistive film and a pair of electrodes adapted to flow a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film....
7099122 Spin polarization enhancement artificial magnet  
A spin polarization enhancement artificial (SPEA) magnet comprises combinations of positive spin asymmetry interfaces and inverse spin asymmetry interfaces arranged antiferromagnetically such that...
7093347 Method of making a current-perpendicular to the plane (CPP) magnetoresistive (MR) sensor  
A magnetoresistive (MR) sensor having a decreased electrical profile due to a confining of the device sense current within a conductive nanoconstriction. The MR sensor includes a giant...
7092219 Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives  
A magnetic head having a spin valve sensor that is fabricated utilizing an Al 2 O 3 , NiMnO, NiFeCr seed layer upon which a typical PtMn spin valve sensor layer structure is subsequently...
7084468 Hybrid ferromagnet/semiconductor spin device and fabrication method therof  
Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at...
7084467 Spin valve transistor with self-pinned antiparallel pinned layer structure  
A spin valve transistor includes an emitter, a collector, a base between the emitter and the collector, a spin valve which includes a free layer structure, a self-pinned antiparallel (AP) pinned...
7085110 Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive  
The magnetic head of the present invention includes a magnetoresistive read head element in which a magnetic bias layer is deposited across the surface of the wafer above the free magnetic layer....
7077936 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film  
A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed...
7072152 Magnetic head and magnetic reproducing system  
There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a...
7072153 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance  
A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a...
7068477 Magnetoresistive film with nickel iron alloy soft magnetic layer having face and body-centered cubic lattice crystals  
A soft magnetic layer is made of nickel iron alloy containing crystals of the face-centered cubic lattice and crystals of the body-centered cubic lattice. The face-centered cubic lattice serves to...
7064936 Magnetoresistance effect device  
A magnetoresistance effect device having a basic structure wherein a multi-layer film comprising a unit of magnetic layer/non-magnetic layer/magnetic layer/antiferromagnetic layer, or...
7064937 System and method for fixing a direction of magnetization of pinned layers in a magnetic field sensor  
A spin valve GMR sensor configured in a bridge configuration is provided. The bridge includes two spin valve element pairs. The spin valve elements include a free layer, a space layer, a pinned...
7061725 Magnetic read sensor with stripe width and stripe height control  
The present invention includes a magnetic sensing structure having a stripe height and a stripe width defining an area for a current flowing therethrough, and at least one electrode positioned...
7061729 Protective cap in lead overlay magnetic sensors  
A lead overlay magnetic sensor for use in a disk drive is provided having a protective cap layer disposed between the electrical leads and the sensor. The protective cap layer is preferably formed...
7061730 Robust hard bias/conductor lead structures for future GMR heads  
A spin-valve magnetoresistive read element has a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for...
7057859 Magneto-resistive device with reduced susceptibility to ion beam damage  
A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a...
7057863 Anti-parallel tab sensor fabrication using chemical-mechanical polishing process  
A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free...
Matches 101 - 150 out of 330 < 1 2 3 4 5 6 7 >