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7446982 Pinning structure with trilayer pinned layer  
A magnetoresistive sensor having a trilayer structure for improved pinning. The pinned layer is exchange coupled with a IrMnCr AFM layer, and has a three ferromagnetic layer, the center one...
7444739 Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process  
A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer....
7425456 Antiferromagnetic stabilized storage layers in GMRAM storage devices  
A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an...
7408730 Reproducing head and magnetic disk drive  
A reproducing head including a read element, first and second electrodes provided at the opposite ends of the read element, a ground electrode provided between the first and second electrodes, a...
7405906 Current-perpendicular-to-plane magnetoresistance effect device with double current control layers  
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a...
7345852 Magnetoresistive element and magnetic memory device  
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second...
7342748 System with matrix array of write heads and matrix array of magnetoresistive (MR) read heads  
The invention provides a system comprising a non-linear array of magnetoresistive (MR) heads arranged in a two-dimensional matrix for reading information stored on magnetic media. The non-linear...
7336070 Bridge circuited magnetic sensor having magneto-resistive element and fixed resistor with the same layer configuration  
The application provides a magnetic sensor which can suppress an irregularity of a central potential due to a change in a temperature, decrease size of the sensor, and lower the manufacturing cost...
7298595 Differential GMR sensor with multi-layer bias structure between free layers of first and second self-pinned GMR sensors  
A method for providing a self-pinned differential GMR sensor and self-pinned differential GMR sensor. The differential GMR head includes two self-pinned GMR sensors separated by a gap layer. The...
7280326 Trilayer SAF with current confining layer  
A current perpendicular to plane (CPP) GMR sensor having first and second outer pinned layers and a trilayer free layer therebetween. The free layer includes first and second outer magnetic layers,...
7268986 Double tunnel junction using self-pinned center ferromagnet  
A double tunnel junction TMR magnetoresistive sensor having first and second magnetic free layers separated by a self pinned magnetic layer. The self pinned magnetic layer is separated from the...
7265949 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system  
A magneto-resistance effect element is adapted that a non-magnetic layer (9, 18), a free layer (3 b , 19), another non-magnetic layer (4, 25), a fixed layer (5, 26), and a fixing layer (6 b , 27)...
7218485 GMR element having fixed magnetic layer provided on side surface of free magnetic layer  
A free magnetic layer contains free magnetic material layers and an intermediate layer interposed therebetween. A fixed magnetic layer contains fixed magnetic material layers and a non-magnetic...
7203037 Method and apparatus for providing a dual current-perpendicular-to-plane (CPP) GMR sensor with improved top pinning  
A method and apparatus for providing a dual current-perpendicular-to-plane (CPP) GMR sensor with improved top pinning is disclosed. In the passive regions of the sensor, a tri-level biasing layer...
7177121 Magnetoresistive sensor with random crystal orientation underlayer and magnetic domain control film center aligned with free layer  
In a magnetoresistive head according to the present invention, a magnetic domain control film formed at the end of a free layer of a stack of magnetoresistive layers is formed of a Co alloy film,...
7173791 Ferroelectric device including a unit element having a topological outline in a C-shape or a S-shape  
A unit element of a magnetic device or a ferroelectric device and magnetic particles of a magnetic recording medium are provided. The outline of the unit element and the magnetic particles is...
7171741 Method for extended self-pinned layer for a current perpendicular to plane head  
A Giant Magneto-Resistive (GMR) sensor ( 900 ) having Current Perpendicular to Plane (CPP) structure is formed providing an extended first pinned layer ( 914 ) as compared to second pinned layer (...
7161771 Dual spin valve sensor with a longitudinal bias stack  
A dual spin valve (SV) sensor is provided with a longitudinal bias stack sandwiched between a first SV stack and a second SV stack. The longitudinal bias stack comprises an antiferromagnetic (AFM)...
7079359 Magnetic recording head having modules with opposing read elements and opposing periodic structures  
A head includes first and second read modules. The first module has an MR element formed on a wafer having a grating directed along a first direction. The magnetization of the first module element...
7057260 Method of making thin-film magnetic head  
In the method of making a thin-film magnetic head in accordance with the present invention, an alignment mark is electrically connected to a multilayer film which will later become a TMR film....
7038894 Magnetoresistive element and magnetic memory device  
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second...
7038889 Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer  
A dual spin valve giant magnetoresistance (GMR) sensor having two spin valves with the second spin valve being self-biased is disclosed herein. According to the present invention a dual spin valve...
7027268 Method and system for providing a dual spin filter  
A method and system for providing a magnetoresistive sensor is disclosed. The method and system include providing a first pinned layer, providing a free layer having a length, and providing a first...
7016160 Differential CPP reader for perpendicular magnetic recording  
A differential read head comprises one tri-layer reader or a plurality of tri-layer readers operating in a current perpendicular to plane (CPP) mode. The tri-layer readers each comprise a first...
6999285 Spin valve transistor with differential detection and method of making  
A method and apparatus for providing a spin valve transistor with differential detection is disclosed. The present invention provides a structure including spin valves that are (100)-oriented on a...
6970331 Magnetic recording head having modules with opposing read elements and opposing periodic structures  
A head includes first and second read modules. The first module has an MR element formed on a wafer having a grating directed along a first direction. The magnetization of the first module element...
6934130 Magnetic device having shaped ferromagnetic film  
A unit element of a magnetic device or a ferroelectric device and magnetic particles of a magnetic recording medium are provided. The outline of the unit element and the magnetic particles is...
6927948 Differential CPP GMR sensor with free layers separated by metal gap layer  
A differential current-perpendicular-to-the-plane (CPP) giant magnetoresistive (GMR) sensor is provided having nonmagnetic high conductivity leads to achieve low lead resistance. The differential...
6906898 Differential detection read sensor, thin film head for perpendicular magnetic recording and perpendicular magnetic recording apparatus  
An object of the present invention is to produce a differential detection read sensor for perpendicular magnetic recording using two magnetic resistance elements; and to provide a thin film head...
6894878 Differential GMR head using anti-parallel pinned layers  
A GMR read element with differential spin valves in which the free layers of the two spin valves have magnetization directions that are parallel to each other while the pinned layers most adjacent...
6888184 Shielded magnetic ram cells  
A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically...
6875621 Magnetizable bead detector  
A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding...
6866751 Method of setting self-pinned AP pinned layers with a canted field  
A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally...
6839206 Ferromagnetic double tunnel junction element with asymmetric energy band  
There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions...
6828785 Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory  
A giant magneto-resistive effect element includes a lamination layer structure portion ( 10 ) in which at least a free layer ( 4 ) the magnetization of which is rotated in response to an external...
6822838 Dual magnetic tunnel junction sensor with a longitudinal bias stack  
A dual magnetic tunnel junction (MTJ) sensor is provided with a longitudinal bias stack sandwiched between a first MTJ stack and a second MTJ stack. The longitudinal bias stack comprises an...
6819530 Current perpendicular to the planes (CPP) sensor with free layer stabilized by current field  
A magnetic head assembly includes a first lead that is electrically connected to a CPP sensor for conducting a current through the sensor perpendicular to major planes of the layers of the sensor....
6791805 Current-perpendicular-to-plane spin valve reader with reduced scattering of majority spin electrons  
A giant magnetoresistive (GMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode includes a ferromagnetic free layer, at least one synthetic antiferromagnet, at least one...
6785102 Spin valve sensor with dual self-pinned AP pinned layer structures  
A spin valve sensor includes a free layer structure which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned...
6781798 CPP sensor with dual self-pinned AP pinned layer structures  
A CPP sensor includes a free layer which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned layer structures....
6771474 Magnetic head with tunneling multi-layer magnetoresistive element biased by current controller  
The present application provides a magneto-resistive element excellent in symmetry of playback waveforms. The basic construction of the present application is as follows. That is, a magnetic layer ...
6771472 Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments  
The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a...
6759120 Magnetoresistive film, magnetoresistive head, information regeneration apparatus and magnetoresistive film manufacture method  
There is disclosed a magnetoresistive film in which increase of a coupling field accompanying thickness reduction of a middle layer is inhibited. The magnetoresistive film is a multilayered film...
6747301 Spin dependent tunneling barriers formed with a magnetic alloy  
A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such...
6743639 Magnetizable bead detector  
A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding...
6731473 Dual pseudo spin valve heads  
This invention presents a method and system for fabricating a dual GMR read head, which possess a pseudo spin valve structure. The spin valve structure includes a first thick Co-alloy based...
6728078 High resistance dual antiparallel (AP) pinned spin valve sensor  
A dual spin valve sensor has a ferromagnetic free layer which is located between nonmagnetic first and second spacer layers wherein the first and second spacer layers are located between...
6721137 Magnetoresistance device  
A magnetoresistance device having a relatively high magnetoresistance ratio enables scale-down and low-current driving, and reduces deterioration of recording storage performance. The...
6700750 Spin-valve thin film element  
A spin-valve thin-film magnetic element includes a substrate, a laminate formed on the substrate, biasing layers, and conductive layers. The laminate includes a free magnetic layer; a first...
6693776 Spin valve sensor with a spin filter and specular reflector layer  
A half metallic phase iron oxide (Fe 3 O 4 ) layer is employed in either or both of a pinned layer structure and a free layer structure in a spin valve sensor for filtering minority electrons and...
Matches 1 - 50 out of 119 1 2 3 >