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7250857 |
Multiplexer method and system for intrinsically safe applications and a multiplexer switch for use therein
A multiplexing system is provided for a plurality of sensors disposed in a tank containing a potentially explosive environment and excited from a common excitation circuit outside of the tank...
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6677688 |
Scalable N×M, RF switching matrix architecture
A scalable N×M switching matrix architecture is characterized by a readily calculable number of crossover locations and comprises one or more single pole, N throw (“SPNT”) switches and, for...
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5497146 |
Matrix wiring substrates
A matrix wiring substrate is provided which can perform an electrostatic countermeasure until drive circuits are connected to a matrix wiring substrate, whereby the circuit wiring can be inspected...
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5227781 |
MOSFET switch matrix
A solid state switch matrix for developing a high current, high voltage output power pulse in response to a small signal input pulse includes a plurality of solid state switch modules and a...
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5150083 |
Digitally controlled monolithic switch matrix using selectable dual gate FET power dividers and combiners
There is described a 2×2 switch matrix which includes four 1×1 switch matrix modules. Each 1×1 switch matrix module consists of an active power divider switch (APDS), an active power combiner...
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5043719 |
Matrix circuit
A matrix circuit has a plurality of blocks each including a plurality of semiconductor unit elements, the semiconductor unit elements of each block being adapted to be impressed with a...
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4910508 |
Matrix logic circuit network suitable for large-scale integration
A matrix logic circuit network comprises a great number of interconnected logic gates. Input and output lines of the logic gates are arranged in the matrix array. By rearranging the input and...
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4899308 |
High density ROM in a CMOS gate array
A memory circuit implemented in a CMOS gate array employs both P-channel and N-channel transistors as memory devices. The use of P-channel memory devices is made possible by providing a...
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4801983 |
Schottky diode formed on MOSFET drain
A unidirectional switching circuit having no charge storage effect for performing a high-speed switching operation is disclosed in which one of the anode and cathode terminals of a Schottky-barrier...
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4745305 |
Common cell I/O interface circuit
A common cell for use as an input/output circuit in a CMOS integrated circuit having a P-channel transistor structure having a plurality of individual P-channel transistors, an N-channel transistor...
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4682127 |
Ultra-high frequency signal switching matrix having active component switching junctions
The invention relates to an ultra-high frequency switching matrix. Only active components, i.e. field effect transistors, are used in the integrated circuit construction of the matrix according to...
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4534008 |
Programmable logic array
Given a programmable logic array, all product terms of the product matrix are applied to a prescribable potential by way of a first control signal so that the following sum matrix is no longer...
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4450537 |
Monolithically integrated read-only memory
A monolithically integrated read-only memory has a plurality of word lines, read lines which cross the word lines to form intersections, and field effect transistors connected to the read and word...
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4445117 |
Transistorized focal plane having floating gate output nodes
A transistorized monolithic focal plane array is formed on a semiconductive substrate and comprises a plurality of detectors associated with a corresponding plurality of source follower or inverter...
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4399439 |
Signal switching matrix
An M by N switch matrix includes N input switches each single-pole M-throw, M output switches each N-throw single-pole with the N*M outputs of the N input switches coupled directly to respective...
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4317110 |
Multi-mode circuit
The conduction path of a first transistor means of first conductivity type is connected between a first point of operating potential and an output point. The conduction paths of second and third...
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4313106 |
Electrically programmable logic array
Two matrix arrays comprised of Gate Injected Metal Oxide Semiconductor (GIMOS) non-volatile memory elements. Interconnection is made via inverters to form an electrically Alterable Programmable...
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4240151 |
Semiconductor read only memory
In a circuit arrangement wherein a memory matrix and an address decoder are constructed of read only memories (ROMs), a semiconductor read only memory is characterized in that at least the address...
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4059826 |
Semiconductor memory array with field effect transistors programmable by alteration of threshold voltage
N-channel silicon gate MOS memory cells are programmed by an ion implant step which is done prior to forming the gates or the diffused source and drain regions. The implanted devices have a...
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4025908 |
Dynamic array with clamped bootstrap static input/output circuitry
A read only memory is organized as a matrix of field effect transistors wherein logic levels are determined by the presence or absence of a gate which permits transistor action. The memory is...
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4023147 |
Associative capacitive storage circuits
For associative operation of a storage circuit, two field-effect transistors form one storage cell, i. e. that together with associated capacitors they store either a 1 or a 0. A word line is...
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3845471 |
CLASSIFICATION OF A SUBJECT
Classification of a subject is effected by a learning matrix whose adaptive elements are minstors disposed in columns and rows. A different pattern of stored comparison characteristics is impressed...
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3720925 |
MEMORY SYSTEM USING VARIABLE THRESHOLD TRANSISTORS
A word-organized memory array employing at each storage location only a single metal-insulator-semiconductor device. Information is written into selected devices by causing them to assume either a...
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3699375 |
IMAGE DETECTOR INCLUDING SENSOR MATRIX OF FIELD EFFECT ELEMENTS
A distribution of charges is accumulated over a leaky dielectric layer in response to electrons from a microchannel plate, which amplifies the output of a photocathode layer stimulated by optical...
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3626371 |
SCANNING CIRCUIT FOR ELECTRONIC MULTISELECTORS HAVING MOS TRANSISTOR MATRIX
An electronic scanning circuit is provided using MOS integrated switches to set up electronic multiselectors. The electronic multiselectors are in the form of matrices of verticals and horizontals...
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3624609 |
TWO-DIMENSIONAL PHOTODIODE MATRIX ARRAY
A two-dimensional photodiode array including insulating-gate field-effect transistor switching elements for the photodiodes is described. The photodiodes operate in the photon flux integration mode...
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3618024 |
ELECTRONIC MULTISELECTOR
A switching matrix includes horizontal and vertical multiples having MOS field effect transistor cross-points. A bistable circuit at the cross-point remembers the busy or idle state of the...
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3609661 |
MATRIX HAVING MOS CROSS-POINTS CONTROLLED BY MOS MULTIVIBRATORS
An electronic switching system employing MOS monolithic transistors in a matrix of cross-points is disclosed. Control of the cross-points is provided by shift registers which operate in response to...
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3593296 |
ELECTRONIC MULTISELECTOR
An electronic multiselector employs metal-oxide-silicon FET transistors in logic circuits comprising NOR gates and inverters. Horizontal selection signals are delivered by a shift register which...
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3493932 |
INTEGRATED SWITCHING MATRIX COMPRISING FIELD-EFFECT DEVICES
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3465293 |
DETECTOR ARRAY CONTROLLING MOS TRANSISTOR MATRIX
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3435138 |
SOLID STATE IMAGE PICKUP DEVICE UTILIZING INSULATED GATE FIELD EFFECT TRANSISTORS
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3355721 |
Information storage
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