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7106093 |
Semiconductor device
A semiconductor device having a plurality of cascaded IC's ( 14, 15, 16 ), wherein the matching impedance between a signal transmission path ( 12 ) connected to an external signal transmission path...
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6933751 |
Integrated Schottky transistor logic configuration
A logic gate is described that has an N-type region, which may be an N-well or N-tub, forming a cathode of one or more Schottky diodes and a collector of an NPN bipolar transistor. Accordingly, the...
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6727730 |
High speed on-chip signaling system and method
An improved signaling system and method are provided that uses transconductance signaling rather than voltage or current signaling. A transient voltage applied to a first end of a conductor can...
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6366142 |
Buffer circuit having Schottky gate transistors adjusting amplitude of output signal
A buffer circuit having an input and output terminals includes a first Schottky gate transistor connected between a voltage setting node and ground, a load device connected between a power supply...
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6111430 |
Circuit for interfacing a first type of logic circuit with a second type of logic circuit
A circuit for interfacing CMOS logic devices, having an output level range associated therewith, with MESFET logic devices, having an input level range associated therewith, comprises a depletion...
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6078194 |
Logic gates for reducing power consumption of gallium arsenide integrated circuits
A method and apparatus for reducing power consumption by gallium arsenide integrated circuits divides the integrated circuit into higher and lower frequency sections. The high frequency sections...
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5909128 |
FETs logic circuit
A semiconductor integrated circuit having a field effect transistor formed on a compound semiconductor is disclosed, that comprises a first power supply, a second power supply for supplying a...
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5592108 |
Interface circuit adapted for connection to following circuit using metal-semiconductor type transistor
An interface circuit includes an input current limiting circuit for limiting a current of an input signal fed from a preceding circuit, thereby outputting the current-limited signal to a following...
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RE35221 |
Schottky enhanced CMOS output circuit
The high impedance state of a tri-state CMOS transistor output circuit is enhanced by serially connecting first and second Schottky diodes with the P-channel transistor and the N-channel transistor...
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5420527 |
Temperature and supply insensitive TTL or CMOS to 0/-5 V translator
Voltage translator apparatus to translate TTL or CMOS logic level inputs to 0/-5 V logic levels that is insensitive to temperative and bias supply variation. A unique circuit structure comprises a...
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5343091 |
Semiconductor logic integrated circuit having improved noise margin over DCFL circuits
A semiconductor logic integrated circuit of this invention comprises a source follower-type switching stage A in which loads MESFET-Q LU and MESFET-Q LD are provided for the drain and source of a...
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5293085 |
GaAs driver circuit
The invention comprises a gallium arsenide driver with float capability for logic high and logic low signals including logic means for receiving an input signal and providing logic high and low...
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5256915 |
Compound semiconductor integrated circuit
A semiconductor integrated circuit produces a driving signal for driving a load. The semiconductor integrated circuit includes a compound semiconductor substrate, a logic part including at least a...
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5233205 |
Quantum wave circuit
A novel concept and structure of a semiconductor circuit are disclosed which utilize the fact that the interaction between the carriers such as electrons and holes supplied in a meso-scopic region...
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5191238 |
Dual FET circuits having floating voltage bias
Prior art single FET switches suffer the disadvantage of uncertainties in the turning on and off thereof due to the high back bias voltage required. In the present system, by using a dual FET...
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5030852 |
Quasicomplementary MESFET logic circuit with increased noise imunity
Disclosed is a logic circuit performing a quasi-complementary operation. This logic circuit includes a load transistor having a drain connected to a first power supply, a drive transistor having a...
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4968904 |
MESFET circuit with threshold-compensated source-follower output
A logic circuit made up of FET's is disclosed in which an output interface circuit is formed of a source follower circuit including a signal transmitting FET and a constant-current supplying FET,...
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4969018 |
Quantum-well logic using self-generated potentials
A new kind of electronic logic circuit, wherein potential wells (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells are discretely...
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4967105 |
Load current control-type logic circuit
An inverter portion, which is to be basic logic circuit, includes switching FETs corresponding to input terminals and a load FET. A logic signal inputted into each of the input terminals drives...
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4965863 |
Gallium arsenide depletion made MESFIT logic cell
A gallium arsenide logic design system is described for designing custom or semi-custom LSI integrated circuits using standard cells from a cell library. D-MESFET transistors and Schottky diodes...
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4924116 |
Feedback source coupled FET logic
A feedback source coupled FET logic (FSCL) circuit having an internal reference voltage provided by the output of one FET of a pair of FET's, connected via a source follower FET to the input of the...
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4897565 |
Logic circuit using Schottky barrier FETs
Disclosed is a logic circuit using Schottky barrier FETs comprising a plurality of circuits connected in series between first and second power supply terminals, the plurality of circuits being DCFL...
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4896057 |
High-speed dynamic domino circuit implemented with gaas mesfets
A dynamic logic circuit (AND or OR) utilizes one depletion-mode metal-semiconductor FET for precharging an internal node A, and a plurality of the same type of FETs in series, or a FET in parallel...
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4845681 |
GaAs SCFL RAM
A GaAs SCFL RAM having a unique three-voltage-level write circuit, direct-read circuitry with only one gate delay, diode-coupled FET logic cells, and peripheral circuitry with SCFL gates. The...
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4831284 |
Two level differential current switch MESFET logic
A GaAs differential current switch (DCS) logic family is disclosed. Two cross-coupled, push-pull output buffer stages are coupled to the DCS logic circuit to increase the gain and to improve noise...
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4810969 |
High speed logic circuit having feedback to prevent current in the output stage
An improved FET capacitance driver logic circuit having an inverter feedback stage 22 connected from output to input of output FET 23 to allow the output FET to have a large capacitance charging...
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4760288 |
Temperature compensation for semiconductor logic gates
A temperature compensation system for semiconductor digital or analog circuits where the temperature compensation is accomplished by two depletion mode MESFETs. A first MESFET is adapted to operate...
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4755695 |
Logic gate having low power consumption
A semiconductor logic circuit device uses a plurality of MESFETs and a Schottky barrier diode (11) interconnected in such a way that one MESFET forms a switching input (9), another MESFET may form...
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4737837 |
Ring topology for an integrated circuit logic cell
An improved topology for a multi-input Boolean logic circuit whereby the circuit can be realized in integrated circuit form while consuming less area on the semiconductor wafer and exhibiting lower...
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4713676 |
Logic circuit arrangement with field effect transistors matched thereto
A logic circuit arrangement has direct coupling of a drain and gate of two successive stages. At least one of the FET's has a buried electrode layer with adjacent, non-tunnelable insulator layers....
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4712023 |
Buffered FET logic gate using depletion-mode MESFET's.
A buffered FET logic gate circuit has a bias diode (9), which is connected across the gate and the source of a current source FET (4) of a buffer part (3, 4), and a capacitor (8), which is...
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4703204 |
Logic coincidence gate and logic sequential circuits using said coincidence gate
The invention relates to a coincidence gate, whose output only changes state if the inputs are of the same logic level. It has two parallel-connected NOT circuits, each constituted by a transistor,...
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4682055 |
CFET inverter having equal output signal rise and fall times by adjustment of the pull-up and pull-down transconductances
A circuit comprises P-channel and N-channel field effect transistors. A conduction electrode, such as a drain, of one of the transistors is coupled to a conduction electrode of the other...
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4661725 |
Elementary logic circuit obtained by means of field effect transistors of gallium arsenide and compatible with the ECL 100 K technology
An elementary logic circuit obtained by means of Schottky barrier field effect transistors of gallium arsenide includes a differential amplifier, whose first branch, controlled by the input signal...
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4638188 |
Phase modulated pulse logic for gallium arsenide
A logic system preferably for gallium arsenide integrated circuits uses dynamic pulsed logic gates which switch on each clock pulse, with the logical state of an output or data line being indicated...
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4558235 |
MESFET logic gate having both DC and AC level shift coupling to the output
A MESFET logic gate wherein a logic switch node is both a-c coupled to the output node, preferably by a capacitor network and is also separately DC coupled to it, preferably by a voltage level...
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4518871 |
Ga/As NOR/NAND gate circuit using enhancement mode FET's
In an integrated logic circuit employing normally-off type FET's, it is difficult, but desirable to realize a NAND gate due to unwanted flow of the forward current to the next stage. In accordance...
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4514649 |
High-entrance high-speed logic operator which has a complex digital function and utilizes at least one quasi-normally off MESFET
In the field of large-scale-integrated digital GaAs circuits, a high-entrance high-speed logical operator utilizing so-called "quasi-normally-off" Schottky-gate field-effect transistors (MESFETS)...
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4490632 |
Noninverting amplifier circuit for one propagation delay complex logic gates
A noninverting amplifier circuit for one propagation delay complex logic gates. The noninverting amplifier circuit is compatible with field effect transistor logic, including depletion-mode...
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4469962 |
High-speed MESFET circuits using depletion mode MESFET signal transmission gates
The present invention provides a circuit comprising (1) a logic element responsive to data of first and second negative voltage potentials, the logic element having a depletion mode MESFET data...
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4450369 |
Dynamic MESFET logic with voltage level shift circuit
GaAs digital electronics uses mainly depletion mode MESFET technology. In typical circuits, negative voltage logic input signals are required while the output voltage is positive. To connect gates,...
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4434379 |
Inverter using low-threshold-voltage field-effect transistors and a switching diode, formed as an integrated circuit
A logic inverter using field-effect transistors of the "normally off" or "quasi normally off" type with relatively wide tolerance on the threshold voltage. It comprises a first half-stage...
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4423339 |
Majority logic gate
A majority logic gate is comprised of a plurality of depletion mode switching devices and includes Schottky diodes for both level shifting and clamping the high logic level output voltage to...
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4418292 |
Logic gate having a noise immunity circuit
A field effect transistor (FET) logic gate wherein a plurality of FETs is coupled to an output enhancement mode FET through a noise immunity circuit, such noise immunity circuit including a...
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4418291 |
Logic gate having an isolation FET and noise immunity circuit
A field effect transistor (FET) logic gate wherein a plurality of FETs is coupled to an output enhancement mode FET through a noise immunity circuit, such noise immunity circuit including a...
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4394589 |
Logic circuit including at least one resistor or one transistor having a saturable resistor field effect transistor structure
A logic circuit including an input stage, wherein a first field-effect transistor is in series with a first saturable resistor interposed on the drain side in the supply of the first transistor,...
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4069493 |
Novel integrated circuit and method of manufacturing same
An integrated circuit comprises a high-resistivity substrate 1 which virtually insulates the various integrated components of the circuit from one another and reduces the parasitic capacitances....
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3599000 |
SEMICONDUCTOR OPTOELECTRONIC LOGIC ELEMENT UTILIZING THE GUNN EFFECT
A semiconductor device for use as a logic element wherein a Gunn effect element is placed in optical coupling relationship with a plurality of semiconductive light emissive elements on a common...
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3106650 |
Gating network
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