Matches 151 - 200 out of 375 < 1 2 3 4 5 6 7 8 >
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7071494 Light emitting device with enhanced optical scattering  
A light emitting device includes a substrate, a textured layer overlying the substrate, at least one III-nitride layer overlying the textured layer, and a substantially planar light emitting...
7071495 III group nitride system compound semiconductor light emitting element and method of making same  
A III group nitride system compound semiconductor light emitting element has: a transparent substrate that is of a material except for III group nitride system compound semiconductor; a convex...
7067849 Diode having high brightness and method thereof  
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN...
7057212 Flip chip nitride semiconductor light emitting diode  
In a nitride semiconductor LED, an n-doped nitride semiconductor layer is formed on a transparent substrate. An active layer is formed on the n-doped nitride semiconductor layer. A p-doped nitride...
7053420 GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof  
Concaves and convexes 1 a are formed by processing the surface layer of a first layer 1 , and second layer 2 having a different refractive index from the first layer is grown while burying the...
7053419 Light emitting diodes with improved light extraction efficiency  
Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The...
7049635 Opposed terminal structure having a nitride semiconductor element  
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed...
7042150 Light-emitting device, method of fabricating the device, and LED lamp using the device  
A semiconductor light-emitting device has a substrate ( 1 ), a semiconductor layer ( 3 ) and a light-emitting layer ( 5 ), and the substrate is furnished on the surface thereof underlying the...
7042012 Semiconductor light-emitting device  
An insulation film 150 made of SiO 2 is formed on a p-type layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on...
7042014 Semiconductor device  
A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active...
7037742 Methods of fabricating light emitting devices using mesa regions and passivation layers  
Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the...
7038247 Light-emitting device with built-in microlens and method of forming the same  
A light-emitting device with a built-in microlens having a microlens integrated with a semiconductor light-emitting device causing no misalignment of an optical axis is provided. This...
7026659 Light emitting diodes including pedestals  
Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in...
7026181 Method for forming LED by a substrate removal process  
The present invention relates to a method for forming LED. In the present invention, LED dies are defined by photolithography and etching processes to replace a cutting step, and a metal substrate...
7022550 Methods for forming aluminum-containing p-contacts for group III-nitride light emitting diodes  
A flip-chip LED device ( 10 ) includes a plurality of group III-nitride semiconductor layers ( 22 ) defining a p/n junction and including a top p-type group III-nitride layer ( 28 ), and a...
7023022 Microelectronic package having improved light extraction  
A light-emitting package includes a substantially transparent substrate having a first surface and a second surface including a lens. The package also includes a light-emitting diode (LED) adapted...
7015054 Semiconductor light emitting device and method  
A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the...
6998649 Semiconductor light-emitting device  
A semiconductor light-emitting device capable of attaining a surface plasmon effect while attaining excellent ohmic contact is provided. This semiconductor light-emitting device comprises a...
6992334 Multi-layer highly reflective ohmic contacts for semiconductor devices  
A high performance, highly reflective ohmic contact, in the visible spectrum (400 nm–750 nm), has the following multi-layer metal profile. A uniform and thin ohmic contact material is deposited...
6987288 Electroluminescent device with light extractor  
The invention concerns an electroluminescent device comprising first and second substantially parallel mirrors for converting electron-hole pairs into photons, and means for generating electrons...
6987613 Forming an optical element on the surface of a light emitting device for improved light extraction  
Provided is a light emitting device including a Fresnel lens and/or a holographic diffuser formed on a surface of a semiconductor light emitter for improved light extraction, and a method for...
6972438 Light emitting diode with porous SiC substrate and method for fabricating  
A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of...
6969946 Enhanced brightness light emitting device spot emitter  
The amount of usefully captured light in an optical system may be increased by concentrating light in a region where it can be collected by the optical system. A light emitting device may include a...
6967117 Method for producing high brightness LED  
The present invention discloses a method for producing a high brightness LED (light emitting diode). The method primarily comprises steps of: a) providing a temporary substrate for epitaxy; b)...
6960485 Light-emitting device using a group III nitride compound semiconductor and a method of manufacture  
A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the...
6956245 Group III nitride compound semiconductor light-emitting element  
A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The...
6952025 Semiconductor light-emitting device  
A small-sized semiconductor light-emitting device of high emission directivity and high output is provided. A portion of a light extraction section of a semiconductor light-emitting device...
6949395 Method of making diode having reflective layer  
A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active...
6946687 Radiation-emitting semiconductor chip with a radiation-emitting active layer  
Recesses interrupt an active layer on a semiconductor chip to improve the coupling out of light. As a result, side faces of the active layer appear, as seen from a light-generating point, at a...
6946685 Light emitting semiconductor method and device  
Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver...
6946788 Light-emitting element  
A light-emitting element has a light-emitting layer and at lease one light-extracting portion. At least a partial part of the light-extracting portion is formed into a concave or convex surface for...
6946683 Opposed terminal structure having a nitride semiconductor element  
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed...
6943377 Light emitting heterostructure  
An improved light emitting heterostructure. In particular, a nitride-based light emitting heterostructure is provided that includes a light generating structure and a distributed semiconductor...
6940099 Semiconductor light emitting element and semiconductor light emitting device  
A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode...
6936853 Light-emitting semiconductor component  
In a light-emitting semiconductor component having a thin-film stack ( 30 ) having an active layer ( 34 ) and front- and rear-side contact regions ( 40, 42 ), which are formed on a front side ( 60...
6936859 Light-emitting semiconductor device using group III nitride compound  
A flip chip type of light-emitting semiconductor device using group III nitride compound comprising a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag),...
6933160 Method for manufacturing of a vertical light emitting device structure  
Disclosed are a vertical GaN based light-emitting device (LED) structure and the manufacturing method thereof. In the structure and the corresponding method, a substrate unit having a mask is used...
6929966 Method for producing a light-emitting semiconductor component  
A method for producing a light-emitting semiconductor component having a thin-film layer sequence ( 14 ), in which a photon-emitting active zone ( 17 ) is formed. The thin-film layer sequence ( 14...
6924515 Semiconductor light-emitting element  
The invention is to realize such a semiconductor light-emitting element which is higher in external quantum efficiency than an existing LED, and lower in production cost than an existing...
6924163 Semiconductor light emitting device and its manufacturing method  
Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer...
6924502 Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum  
A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper...
6921924 Semiconductor light-emitting device  
A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type...
6919935 Method of forming an active matrix display  
The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's...
6916676 Method for producing a nitride semiconductor element  
A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an...
6914268 LED device, flip-chip LED package and light reflecting structure  
A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a...
6911674 Feedback and coupling structures and methods  
A light emitting device may include a light emitting layer such as an organic semiconductor material, one or more feedback structures, and a coupling structure. The one or more feedback structures...
6911351 Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same  
The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of Al u Ga v In w N, wherein 0≦u, v, w≦1...
6903379 GaN based LED lighting extraction efficiency using digital diffractive phase grating  
A light emitting diode incorporating an active emitting layer ( 14 ) overlying a transparent substrate ( 10 ) is provided with a reflective diffraction grating ( 30 ) on the bottom surface of the...
6903376 Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction  
In accordance with embodiments of the invention, a light emitting device includes a light emitting region and a reflective contact separated from the light emitting region by one or more layers. In...
6900068 Light emitting diode and method of making the same  
A high reflective and conductive metal substrate instead of a GaAs substrate which is a light absorption substrate is utilized for the light emitting diode. The processes include forming a mirror...
Matches 151 - 200 out of 375 < 1 2 3 4 5 6 7 8 >