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7166483 |
High brightness light-emitting device and manufacturing process of the light-emitting device
A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent...
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7166870 |
Light emitting devices with improved extraction efficiency
Light-emitting devices, and related components, systems and methods are disclosed.
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7166871 |
Light emitting systems
Light-emitting systems, and related components, systems and methods are disclosed.
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7161301 |
Nitride light-emitting device having an adhesive reflecting layer
A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent...
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7161188 |
Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with...
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7154121 |
Light emitting device with a micro-reflection structure carrier
A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent...
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7153713 |
Method for manufacturing high efficiency light-emitting diodes
A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active...
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7154125 |
Nitride-based semiconductor light-emitting device and manufacturing method thereof
The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a...
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7151282 |
Light emitting diode
A green LED has a substrate, a GaN heavily n-doped bottom confining layer, an active region, an upper GaN confinement layer, and a semi-transparent ohmic contact layer. The active region has less...
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7148520 |
Diode having vertical structure and method of manufacturing the same
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN...
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7148075 |
Vertical semiconductor devices or chips and method of mass production of the same
The vertical semiconductor chips or devices have all of advantages of flip chip technique and without its disadvantages. The present invention discloses methods of mass production of the vertical...
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7148521 |
Semiconductor light emitting device and method of manufacturing the same
A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate;...
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7148514 |
Nitride semiconductor light emitting diode and fabrication method thereof
The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a...
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7145181 |
Semiconductor chip for optoelectronics
A semiconductor chip, in particular a light-emitting diode, has a substrate ( 2 ), on which a sequence of semiconductor layers ( 3 ) with an active zone ( 5 ) has been applied. Above the sequence...
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7145182 |
Integrated emitter devices having beam divergence reducing encapsulation layer
In one embodiment, a method for fabricating an integrated emitter device occurs on a flat substrate such as printed circuit board (PCB). A cup of suitable material such as epoxy is transfer molded...
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7144748 |
Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density
An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for...
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7141825 |
Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver
A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a...
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7138664 |
Semiconductor device having a light emitting element
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode...
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7138663 |
Color separation device of solid-state image sensor
A microlens condenses incident light to an opening. Light passed through the opening reaches a first dichroic mirror. The first dichroic mirror passes blue light and reflects green and red light....
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7138666 |
Light emitting devices
Light-emitting devices, and related components, systems and methods are disclosed. The light-emitting device can include a multi-layer stack of materials including a light-generating region and a...
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7138665 |
Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode...
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7135714 |
Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode...
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7135711 |
Electroluminescent body
An electroluminescent component ( 1 ), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component ( 1 ) has a...
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7135709 |
Surface structured light-emitting diode with improved current coupling
Structured-surface light-emitting diode having a light generating layer and a relatively thick, transparent current-spreading layer, vertical structuring of the top surface of the current-spreading...
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7129527 |
Light emitting diode and method of making the same
A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from...
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7129528 |
Electromagnetic radiation emitting semiconductor chip and procedure for its production
Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured...
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7129103 |
Semiconductor light emitting element and method of making the same
A semiconductor light-emitting element 10 includes a silicon single crystal substrate 20 having a first and a second surfaces 20 a , 20 b in head-tail relationship with each other, a GaN-based...
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7122446 |
Semiconductor light-emitting element
Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it...
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7119374 |
Gallium nitride based light emitting device and the fabricating method for the same
A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting...
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7119375 |
Light emitting diode and method for manufacturing the same
A light emitting diode (LED) includes a substrate, a first conductive clad layer formed on the substrate, an active layer formed on the first conductive clad layer, a second conductive clad layer...
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7119372 |
Flip-chip light emitting diode
A flip chip light emitting diode die ( 10, 10′, 10 ″) includes a light-transmissive substrate ( 12, 12′, 12 ″) and semiconductor layers ( 14, 14′, 14 ″) that are selectively patterned...
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7115907 |
Radiation-emitting semiconductor component
A radiation-emitting semiconductor component with a layer structure ( 12 ) which includes a photon-emitting active layer ( 16 ), an n-doped cladding layer ( 14 ) and a p-doped cladding layer ( 18...
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7115915 |
Light-emitting diode
A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a...
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7115909 |
Light emitting device and method of manufacturing the same
Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the...
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7112916 |
Light emitting diode based light source emitting collimated light
A light emitting diode, a reflector and a platform are employed within a light source. The light emitting diode emits light exclusively from its side surfaces. The reflector has a parabolic...
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7112829 |
Light emitting device and method for making same
A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second...
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7109527 |
Semiconductor chip for optoelectronics and method for production thereof
A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film...
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7109529 |
Light-emitting semiconductor device using group III nitride compound
A flip chip type of light-emitting semiconductor device using group III nitride compound includes a thick positive electrode. The positive electrode, which is made of at least one of silver (Ag),...
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7105858 |
Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density
An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for...
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7102175 |
Semiconductor light-emitting device and method for fabricating the same
Projections/depressions of a two-dimensional periodic structure are formed in a p-GaN layer ( 4 ) such that the period of the projections/depressions is 1 to 20 times the wavelength of light...
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7098589 |
Light emitting devices with high light collimation
Light-emitting devices, and related components, systems and methods are disclosed. The light-emitting device can include a multi-layer stack of materials and a support. The multi-layer stack of...
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7091526 |
Light emitting device and method of fabricating the same
A light emitting device 100 has a light emitting layer portion 9 which comprises an active layer 5 composed of an Mg x Zn 1-x O-type oxide semiconductor, a p-type cladding layer 6 again...
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7087933 |
Light-emitting semiconductor device and method of fabrication
A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a...
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7084432 |
Nitride semiconductor light emitting diode
An increased proportion of light projected from a nitride semiconductor light emitting diode enters the area within a specified angle. The nitride semiconductor light emitting diode is provided...
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7084434 |
Uniform color phosphor-coated light-emitting diode
Light-emitting devices, and related components, systems and methods are disclosed.
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7083993 |
Methods of making multi-layer light emitting devices
Methods of making multi-layer light-emitting devices and related components and systems are disclosed. The light-emitting devices can include a layer of reflective material bonded with a layer of...
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7078736 |
Light emitting device with a photonic crystal
A light emitting device includes a photonic crystal having a periodic pattern of elements exhibiting a spectrum of electromagnetic modes that includes guided modes of frequencies below a...
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7078252 |
Method of making group III nitride compound semiconductor light emitting element
A III group nitride system compound semiconductor light emitting element has: a transparent substrate with a concave portion on the surface; a filling material that is embedded in the concave...
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7075501 |
Head mounted display system
A head mounted display system including a high resolution active matrix display which reduces center of gravity offset in a compact design. The active matrix display can be either a liquid crystal...
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7074631 |
Light emitting device methods
A method includes disposing a planarization layer on a surface of a layer of semiconductor material and disposing a lithography layer on a surface of the planarization layer. The method also...
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