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7608861 |
Active matrix type display having two transistors of opposite conductivity acting as a single switch for the driving transistor of a display element
An active matrix type display device having a plurality of pixel circuits ( 1 ) arranged in a matrix shape. The pixel circuit has: a display device (EL); a drive transistor (M 1 ) of a first...
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7601985 |
Semiconductor light-emitting device
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
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7598530 |
Light emitting diode with high illumination
A light emitting diode ( 80 ) includes a first and a second semiconductor structures ( 30, 40 ), and an adhesive layer ( 34, 46 ) between the first and the second semiconductor structures. The...
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7550755 |
Semiconductor device with tunable energy band gap
The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a...
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7439548 |
Surface mountable chip
A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section...
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7361970 |
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps:
applying a mask having cutouts...
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7355220 |
Array substrate
An array substrate includes an insulating substrate, pixel circuits arranged in a matrix on the insulating substrate, and video signal lines arranged correspondently with columns which the pixel...
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7352042 |
Radiation-emitting semiconductor device and method of manufacturing such a device
The invention relates to a radiation-emitting semiconductor device ( 10 ) with a semiconductor body ( 1 ) and a substrate ( 2 ), wherein the semiconductor body ( 1 ) comprises a vertical bipolar...
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7170097 |
Inverted light emitting diode on conductive substrate
An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at...
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7061006 |
Light emission from semiconductor integrated circuits
Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by...
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6974945 |
Photosensor
A photosensor comprises an emitter that emits light when a forward voltage is applied to a junction between semiconductor regions different in conduction type, wherein the photosensor detects...
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6946674 |
Low-dimensional plasmon light emitting device
A low-dimensional plasmon-light emitter for converting an inputted electric energy luminescence with an arbitrary energy over a broad range. The emitter has a low-dimensional conductive structure...
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6905977 |
Method of improving electroluminescent efficiency of a MOS device by etching a silicon substrate thereof
The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to...
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6900466 |
Semiconductor component for generating polychromatic electromagnetic radiation
A semiconductor component for generating a polychromatic electromagnetic radiation has a semiconductor chip with a first semiconductor layer and a second semiconductor layer, which is provided...
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6847057 |
Semiconductor light emitting devices
A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type...
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6822991 |
Light emitting devices including tunnel junctions
A light emitting device includes a first active region, a second active region, and a tunnel junction. The tunnel junction includes a layer of first conductivity type and a layer of second...
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6806521 |
Integrated high performance MOS tunneling LED in ULSI technology
A new method and structure for the combined creation of CMOS devices and LED devices. The process starts with a substrate over the surface of which are designated a first surface region for the...
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6770903 |
Metal-oxide-silicon device including nanometer scaled oxide structure to enhance light-emitting efficiency
A metal-oxide-silicon (MOS) device that at least includes a silicon-based substrate, a nanometer scaled oxide layer formed on the silicon-based substrate and a metal layer formed on the oxide...
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6534798 |
Surface plasmon enhanced light emitting diode and method of operation for the same
The emission properties of light-emitting diodes are enhanced by coupling to surface plasmons. The semiconductor emitter layer of the light-emitting diode is thinner than λ/2 and is sandwiched...
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6515308 |
Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting...
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6365951 |
Methods on constructing an avalanche light emitting diode
Methods of laying out avalanche light emitting diodes (LEDs) are described in which a heavily impurity doped region of one type of polarity, a second, lighter doped region of like polarity, and a...
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6111274 |
Inorganic light emitting diode
An object of the invention is to provide a light emitting diode which enables relatively easy fabrication of large-area displays and is applicable to thin, long life, low cost, full color displays...
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5949182 |
Light-emitting, nanometer scale, micromachined silicon tips
0504221609 Nanometer-scale field emitter tips are fabricated on a single crystal silicon substrate and an optically active semiconductive material is deposited on the tip. A bias voltage is...
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5561304 |
Electroluminescent silicon device
An electroluminescent silicon device (10) includes a silicon structure (12) which comprises a bulk silicon layer (14) and a porous silicon layer (16). The porous layer (16) has merged pores (20)...
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5451977 |
Self-scanning light-emitting array and a driving method of the array
A self-scanning light-emitting element array is disclosed. A coupled array of light-emitting elements is constituted so that a light-emitting element which is turned on influences a light-emitting...
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5414282 |
Semiconductor optoelectronic switch and method for driving the same
The invention provides a heterostructure optoelectronic switching device showing a switch operation in response to a light injection for a subsequent light emission. The switching device comprises...
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5340998 |
Semiconductor surface light emitting and receiving heterojunction device
A surface-normal optoelectronic device is provided which includes a first semiconductor layer of a first electroconductive type, a second semiconductor layer of a second electroconductive type...
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5151756 |
Surface emitting heterojunction light emitting diode
A surface emitting LED has a PN junction between two semiconductor layers, at least one layer being an active layer. The diode is adapted for emitting light through an exit surface. Between the...
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5138624 |
Multiwavelength LED and laser diode optical source
The invention relates to the design of multiwavelength LED devices having multiple-lobe optical spectrums and laser diode devices with multiple designated wavelengths wherein the devices are formed...
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5093875 |
Optical interconnection apparatus
A matrix of optical functional devices are divided into plural device units. Each of the device units includes at least two optical functional devices having light transmitting coatings. The...
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5031005 |
Semiconductor device
A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of │Ec 3 -Ec 1 │≉│Ev 3 -Ev 5 │, where Ec 3 ...
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4979002 |
Optical photodiode switch array with zener diode
An optical switching array includes a body of a semiconductor material having opposed surfaces. A plurality of spaced bodies of a semiconductor material are on one of the surfaces of the substrate....
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4972094 |
Lighting devices with quantum electric/light power converters
Lighting devices are described in which the light source comprises a plurality of light emitting structures utilizing the direct conversion of electron energy to photon energy, at high efficiency....
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4894832 |
Wide band gap semiconductor light emitting devices
Wide band gap, single conductivity type semiconductor light emitting diodes (LED's) feature a bias potential across the device below that required for carrier multiplication by avalanche breakdown,...
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4775876 |
Photon recycling light emitting diode
A photon recycling light emitting diode consisting of a stack of direct bandgap semiconductor active layers on a substrate with increasing bandgap energy from the substrate, separated by barrier...
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4766471 |
Thin film electro-optical devices
An electro-optical communication device which includes a light transmissive conduit integrally formed to interconnect a light emitter and a light detector. The length over which the light...
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4754141 |
Modulated infrared source
A solid state infrared source is disclosed which is capable of modulation of the intensity of broadband infrared radiation. A silicon semiconductor body is provided with doped regions which have...
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4730331 |
Superluminescent LED source
A light source comprises a semiconductor laser having a plurality of deposited semiconductor layers including an active region consisting of a plurality of layers forming at least two quantum wells...
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4730207 |
Non-single-crystal semiconductor light emitting device
A non-single crystal semiconductor light emitting device comprising a non-single crystal semiconductor region formed by a non-single crystal semiconductor laminate member made up of a plurality m...
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4720642 |
Femto Diode and applications
A Femto Diode responsive to light frequencies, is described. Quantum principles are utilized. The Femto Diode comprises a submicron metal cylinder with an assymetric metal-insulator-metal tunnel...
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4710936 |
Optoelectronic semiconductor device
A semiconductor laser device has a double hetero construction such that a direct transition type semiconductor layer having a high refractive index is placed between direct transition type...
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4638334 |
Electro-optic line printer with super luminescent LED source
An electro-optic line printer comprises a recording medium, a multigate line modulator for printing picture elements or pixels in spatially predetermined positions along a printing axis and an LED...
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4574161 |
Ordered dipolar light-electric power converter
A bulk process is described which is capable of producing large area sheets about 8 micrometers thick having the property of light/electric power conversion at extremely high production rates (many...
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4566023 |
Squeezable electron tunnelling junction
A mechanically adjustable tunnelling junction includes two electrodes defining a gap supported on substrates. Spacers maintain the electrodes in spaced apart relation. At least one of substrates is...
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4554485 |
Solid-state image display device
A solid-stage image display device is disclosed in which an electron injection region of high impurity density is formed on a surface of a semiconductor substrate of low impurity density, while a...
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4450460 |
Magnetic-infrared-emitting diode
A plate of a semiconductor having a narrow energy gap such as InSb, is applied with a magnetic field in parallel therewith and further supplied with a current in parallel therewith also as well as...
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4165515 |
Light emitting tunnel junctions which are stable at room temperature
Devices which emit in the visible region having a metal oxide barrier layer, e.g. magnesium oxide or beryllium oxide, and having a corresponding metal electrode, i.e., a magnesium or beryllium...
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4164374 |
Spectrophotometer utilizing a solid state source of radiant energy having a controllable frequency spectra characteristic
A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff ν co , which is a function of the applied voltage value. The source is a...
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4163920 |
Solid state source of radiant energy having a controllable frequency spectra characteristic
A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff ν co , which is a function of the applied voltage value. The source is a...
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3603833 |
ELECTROLUMINESCENT JUNCTION SEMICONDUCTOR WITH CONTROLLABLE COMBINATION COLORS
An electroluminescent PN junction gallium phosphide diode is fabricated with the P-type zone rich in zinc oxygen pairs and the N-type zone rich in isoelectronic nitrogen. In this diode, the...
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