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7408223 Trench insulated gate field effect transistor  
The invention relates to a trench MOSFET with drain ( 8 ), sub-channel region ( 10 ) body ( 12 ) and source ( 14 ). The sub-channel region is doped to be the same conductivity type as the body ( 12...
7385247 At least penta-sided-channel type of FinFET transistor  
An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions...
7372100 Semiconductor device  
A semiconductor device includes: a semiconductor layer of a first conductivity type; a plurality of first cylindrical semiconductor pillar regions of the first conductivity type periodically...
7368777 Accumulation device with charge balance structure and method of forming the same  
An accumulation-mode field effect transistor includes a plurality of gates and a semiconductor region having a channel region adjacent to but insulated from each of the plurality of gates. The...
7364997 Methods of forming integrated circuitry and methods of forming local interconnects  
In one implementation, field oxide is grown within bulk semiconductive material in a first circuitry area and not over immediately adjacent bulk semiconductive material in a second circuitry area....
7316956 Method for fabricating semiconductor device and wire with silicide  
A method for fabricating a wire with silicide is disclosed. First, a conductive layer is formed on a substrate. And, a hard mask layer is formed on the conductive layer. Then, the hard mask layer...
7303961 Method for producing a junction region between a trench and a semiconductor zone surrounding the trench  
A method for producing a junction region ( 2, 5, 6, 7 ) between a trench ( 3 ) and a semiconductor zone ( 2 ) surrounding the trench ( 3 ) in a trench semiconductor device ( 1 ) has the following...
7282760 Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors  
A vertical JFET 1 a according to the present invention has an n + type drain semiconductor portion 2 , an n-type drift semiconductor portion 3 , a p + type gate semiconductor portion 4 , an...
7276763 Structure and method for forming the gate electrode in a multiple-gate transistor  
In a method of forming semiconductor device, a semiconductor fin is formed on a semiconductor-on-insulator substrate. A gate dielectric is formed over at least a portion of the semiconductor fin. A...
7276754 Annular gate and technique for fabricating an annular gate  
A memory structure having a vertically oriented access transistor with an annular gate region and a method for fabricating the structure. More specifically, a transistor is fabricated such that the...
7271413 Semiconductor constructions  
The invention includes semiconductor constructions containing vertically-extending pillars, and methods for forming such constructions. The vertically-extending pillars can be incorporated into...
7265388 Semiconductor device  
A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of...
7262946 Integrated electronic disconnecting circuits, methods, and systems  
Merged devices for transient blocking. A pass transistor is placed so that its body potential drives the gate of a depletion-mode JFET-type blocking transistor. Thus a transient which appears on an...
7262460 Vertical insulated gate transistor and manufacturing method  
A vertical insulated gate transistor is manufactured by providing a trench ( 26 ) extending through a source layer ( 8 ) and a channel layer ( 6 ) towards a drain layer ( 2 ). A spacer etch is used...
7262099 Methods of forming field effect transistors  
A mass of material is formed over a semiconductor substrate. Semiconductive material is formed laterally proximate the mass of material. A space is provided laterally between the mass of material...
7259411 Vertical MOS transistor  
A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain...
7259048 Vertical replacement-gate silicon-on-insulator transistor  
An architecture for creating a vertical silicon-on-insulator MOSFET. Generally, an integrated circuit structure includes a semiconductor area with a major surface formed along a plane and a first...
7242057 Vertical transistor structures having vertical-surrounding-gates with self-aligned features  
The present inventions include a vertical transistor formed by defining a channel length of the vertical-surrounding-gate field effect transistor with self-aligning features. The method provides...
7242056 Structure and fabrication method for capacitors integratible with vertical replacement gate transistors  
A process and an architecture related to a vertical MOSFET device and a capacitor for use in integrated circuits. Generally, the integrated circuit structure includes a semiconductor layer with a...
7241694 Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate  
A method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the...
7241649 FinFET body contact structure  
A FinFET body contact structure and a method for creating the FinFET body contact structure are disclosed. The body contact structure comprises a wide fin portion of a semiconductor fin, the wide...
7238985 Trench type mosgated device with strained layer on trench sidewall  
A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer...
7235840 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors  
A vertical JFET 1 a according to the present invention has an n + type drain semiconductor portion 2 , an n-type drift semiconductor portion 3 , a p + type gate semiconductor portion 4 , an...
7232726 Trench-gate semiconductor device and method of manufacturing  
Consistent with an example embodiment a trench-gate semiconductor device, for example a MOSFET or IGBT, having a field plate provided below the trenched gate is manufactured using a process with...
7221011 High-voltage vertical transistor with a multi-gradient drain doping profile  
A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second...
7221010 Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors  
Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and...
7220634 NROM memory cell, memory array, related devices and methods  
An array of memory cells configured to store at least one bit per one F 2 includes substantially vertical structures providing an electronic memory function spaced apart a distance equal to one...
7217954 Silicon carbide semiconductor device and method for fabricating the same  
An inventive semiconductor device is provided with: a silicon carbide substrate 1; an n-type high resistance layer 2; well regions 3 provided in a surface region of the high resistance layer ...
7211839 Group III nitride semiconductor device  
A semiconductor device is formed by a first layer 32 composed of AlGaN, a second layer 42 composed of GaN, a gate electrode 34 , a source electrode 38 , and a drain electrode 28 . The first...
7205657 Complimentary lateral nitride transistors  
A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating...
7205598 Random access memory device utilizing a vertically oriented select transistor  
A memory structure has a vertically oriented access transistor with an annular gate region. A transistor is fabricated such that the channel of the transistor extends outward with respect to the...
7187041 Vertical gate semiconductor device and method for fabricating the same  
A first region 11 functioning as a transistor includes a drain region 111 , a body region 112 formed over the drain region 111 , a source region 113 A formed over the body region 112 and a...
7183610 Super trench MOSFET including buried source electrode and method of fabricating the same  
In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the...
7183164 Methods of reducing floating body effect  
Methods of reducing the floating body effect in vertical transistors are disclosed. The floating body effect occurs when an active region in a pillar is cut off from the substrate by a depletion...
7176483 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions  
An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently...
7176089 Vertical dual gate field effect transistor  
A method of manufacturing provides a vertical transistor particularly suitable for high density integration and which includes potentially independent gate structures on opposite sides of a...
7173307 Semiconductor device and manufacturing method thereof  
An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap...
7169714 Method and structure for graded gate oxides on vertical and non-planar surfaces  
A method for forming an oxide layer on a vertical, non-planar semiconductor surface provides a low stress oxide layer having a pristine interface characterized by a roughness of less than 3...
7151280 Semiconductor device  
A semiconductor device includes a heterojunction semiconductor region 9, which forms a heterojunction with a drain region 2. The heterojunction semiconductor region 9 is connected to a source...
7148096 Method of manufacturing a semiconductor device having a gate electrode containing polycrystalline silicon-germanium  
An aspect of the present invention includes a first conductive type semiconductor region formed in a semiconductor substrate, a gate electrode formed on the first conductive type semiconductor...
7138668 Heterojunction diode with reduced leakage current  
An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity...
7122860 Trench-gate semiconductor devices  
A trench-gate semiconductor device, for example a MOSFET or IGBT, includes a semiconductor body ( 20 ) having a drain region ( 4 ) comprising a drain drift region ( 4 a ) and a drain contact region...
7122425 Methods of forming semiconductor constructions  
The invention includes semiconductor constructions containing vertically-extending pillars, and methods for forming such constructions. The vertically-extending pillars can be incorporated into...
7115945 Strained silicon fin structure  
Disclosing is a strained silicon finFET device having a strained silicon fin channel in a double gate finFET structure. The disclosed finFET device is a double gate MOSFET consisting of a silicon...
7115476 Semiconductor manufacturing method and semiconductor device  
A method of manufacturing a semiconductor device includes forming a mask layer on a semiconductor substrate, etching the semiconductor substrate using the mask layer as a mask, thereby forming a...
7112478 Insulated gate field effect transistor having passivated Schottky barriers to the channel  
A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are...
7084456 Trench MOSFET with recessed clamping diode using graded doping  
In a trench-gated MOSFET including an epitaxial layer over a substrate of like conductivity and trenches containing thick bottom oxide, sidewall gate oxide, and conductive gates, body regions of...
7084423 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions  
An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the...
7078764 Method of fabricating a vertical quadruple conduction channel insulated gate transistor, and integrated circuit including this kind of transistor  
The vertical insulated gate transistor includes, on a semiconductor substrate, a vertical pillar incorporating one of the source and drain regions at the top, a gate dielectric layer situated on...
7074643 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same  
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source...
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