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7388239 |
Frame shutter pixel with an isolated storage node
A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion.
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7384846 |
Method of fabricating semiconductor device
A method of fabricating semiconductor devices. Upon formation of a trench for isolation in a cell region, a hard mask film is used as an etch mask. It is thus possible to prevent attacks of a lower...
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7368339 |
Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain...
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7361931 |
Active matrix electro-luminescent display with an organic leveling layer
A resin material having a small relative dielectric constant is used as a layer insulation film 114 . The resin material has a flat surface. A black matrix or masking film for thin film...
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7358532 |
Electro-optical device and electronic apparatus
An electro-optical device includes first switching elements which are correspondingly provided at intersections of a plurality of scanning lines and a plurality of data lines in a display region,...
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7352020 |
Solid-state image pickup device, and manufacturing method thereof
The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for...
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7348615 |
Image pickup device and camera for converting charges into voltage
An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid...
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7348613 |
CMOS imager with selectively silicided gates
The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The...
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7344930 |
Semiconductor device and manufacturing method thereof
To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention...
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7312152 |
Lactate-containing corrosion inhibitor
The corrosion of aluminum-based metal films may be minimized by applying a lactate-containing solution to the aluminum-based metal films before the aluminum-based metal films are etched. The...
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7291823 |
Image pickup device with pixel signal and inverted pixel signal analog outputs
A solid-state image pickup device has a differential output configuration for an output stage thereof and an IC in a next stage has a differential amplifier configuration for an input stage...
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7288801 |
Image sensing structure
A CMOS image sensing structure includes a photodiode, in which an epitaxial layer is on a P-type substrate. The photodiode includes an N-well collection node in the epitaxial layer. An isolation...
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7285796 |
Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels
An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed....
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7285764 |
Solid state imaging device and method of driving the same
An imaging device comprising: a photoelectric conversion element generating photo-generated charges; an accumulation well accumulating the charges; a modulation well storing the charges; a...
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7279673 |
Sensor, scanner and portable information terminal each having liquid crystal display
To provide a close contact type sensor promoting a light utilizing efficiency, there is provided a close contact type sensor featured in that in a close contact type sensor having a sensor circuit...
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7279672 |
Image sensor having pinned floating diffusion diode
The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the...
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7279353 |
Passivation planarization
A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process...
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7276748 |
Body potential imager cell
An imaging circuit, an imaging sensor, and a method of imaging. The imaging cell circuit including one or more imaging cell circuits, each imaging cell circuit comprising: a transistor having a...
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7274395 |
MOS-type image sensor configured to reduce coupling noise
An image sensor is disclosed that prevents a photoelectrically-converted signal from being corrupted during a readout operation. The image sensor includes a line-selection line located on an upper...
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7274394 |
Solid state image pickup device and manufacturing method therefor
A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a...
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7271835 |
Solid-state image pickup device and device driving control method for solid-state image pickup
Disclosed herein is a solid-state image pickup device including: a plurality of unit pixels each having: a charge generating section for generating a charge, a charge storage section for storing...
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7271834 |
Imaging device chip having transistors of same conductivity type and image pickup system
An imaging device chip set includes an imaging chip provided for obtaining an electric signal by photoelectric conversion of incident light, and a DSP chip provided for carrying out digital signal...
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7271432 |
Image-sensing apparatus
In a solid-state image-sensing device, when image sensing is performed, in each pixel, MOS transistors T 1 and T 5 are turned on and a MOS transistor T 6 is turned off so that a MOS transistor T...
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7271430 |
Image sensors for reducing dark current and methods of fabricating the same
An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the...
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7271411 |
Light emitting device and manufacturing method of the same
The invention provides a downsized structure of a light emitting device, and a light emitting device which has enough reliability as a downsized light emitting device. The light emitting device...
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7271025 |
Image sensor with SOI substrate
An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel....
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7268009 |
Method for fabricating a CMOS image sensor
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor is disclosed. An example method forms a metal pad in a pad area of a substrate having an active area and a pad...
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7265740 |
Suppression of leakage current in image acquisition
In a manufacturing process of a display device, hydrogenation in an I layer of photodiodes D 1 and D 2 is progressed less than that in a channel portion of a pixel TFT, and a defect density due...
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7265328 |
Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor
A device and method to provide an optical guide of a pixel to guide incoming light onto a photosensor of the pixel and to improve the optical crosstalk immunity of an image sensor. The optical...
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7262448 |
CMOS image sensor
A CMOS image sensor is disclosed, to improve light-condensing efficiency by forming a minute lens array having a large curvature (long focal distance) for the increase in height of upper structures...
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7262401 |
Active pixel sensor cell with integrating varactor and method for using such cell
An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor...
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7262110 |
Trench isolation structure and method of formation
In general, the present invention discloses at least one trench isolation region formed in a semiconductor substrate to electrically and/or optically isolate at least one active region from another...
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RE39780 |
Photoelectric converter, its driving method, and system including the photoelectric converter
A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric...
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7259790 |
MOS type solid-state image pickup device and driving method comprised of a photodiode a detection portion and a transfer transistor
An MOS type solid-state image pickup device including pixels each of which comprises a photodiode PD, a detection portion N and a transfer transistor Q T for transferring the charges accumulated...
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7259413 |
High dynamic range image sensor
A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have a dual purpose, acting as both a...
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7259412 |
Solid state imaging device
A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface...
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7259361 |
Producing method for solid-state image pickup device including formation of a carrier accumulating region
The invention is to simplify a producing process for a solid-state image pickup device having pixels including MOS transistors, thereby improving productivity of the image pickup device. In a...
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RE39768 |
VCC pump for CMOS imagers
A CMOS imaging device which includes a charge pump connected to one or more of a reset gate, transfer gate and row select gate of sensor cells and provides gate control signals which give the...
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7256061 |
Array substrate for liquid crystal display device and method of manufacturing the same
An array substrate for a liquid crystal display device includes a substrate including a first driving region, a second driving region, and a pixel region, the pixel region including a switching...
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7253458 |
CMOS image sensor
A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to...
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7253392 |
Image sensor with photo diode gate
A photodiode has a photodiode gate structure on the surface of the substrate. The photodiode may be located in a pixel sensor cell comprising a substrate having a first surface level. The...
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7250970 |
Image pickup apparatus
An image pickup device including an array of a plurality of pixels including photoelectric conversion portions for accumulating signal charges generated by photoelectric conversion and an...
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7250665 |
Method and apparatus for removing electrons from CMOS sensor photodetectors
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.
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7250647 |
Asymmetrical transistor for imager device
An imager device that has mitigated dark current leakage and punch-through protection. The transistor associated with the photoconversion device is formed with a single (i.e, one-sided) active area...
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7250325 |
Image sensor with deep well region and method of fabricating the image sensor
An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data,...
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7247891 |
Semiconductor device and method for fabricating the same
A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a...
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7244920 |
CMOS sensor array with a shared structure
A CMOS sensor array includes a plurality of unit blocks. A unit block includes: N pairs of photo diode regions arranged in a first direction; 2N transfer transistors respectively corresponding to...
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7244646 |
Pixel design to improve photodiode capacitance and method of forming same
A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated...
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7242043 |
Imaging device and manufacturing method thereof
Disclosed is an imaging device including a photodiode and floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a silicon (semiconductor) substrate,...
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7242042 |
Solid state image sensing device and manufacturing and driving methods thereof
A solid state image sensing device is composed of a second conductive type well area 33 , a photoelectric conversion area 40 , a ring shaped gate electrode 35 , a transfer gate electrode 41 , a...
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