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7413951 |
Stacked capacitor and method for producing stacked capacitors for dynamic memory cells
A method produces stacked capacitors for dynamic memory cells, in which a number of trenches ( 48 ) are formed in the masking layer ( 40 ), each trench ( 48 ) being arranged above a respective...
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7368776 |
Semiconductor device comprising a highly-reliable, constant capacitance capacitor
A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to...
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7364967 |
Methods of forming storage capacitors for semiconductor devices
Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a...
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7358557 |
Capacitor for semiconductor device and method of forming the same
A capacitor for a semiconductor device includes a lower electrode, a dielectric layer formed on a lower electrode, and an upper electrode formed on the dielectric layer. The lower electrode...
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7355234 |
Semiconductor device including a stacked capacitor
A stacked capacitor formed in a capacitor hole includes a bottom electrode, capacitor insulation film and a top electrode. The bottom electrode includes a plurality of islands formed on an...
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7348234 |
Methods of forming capacitor constructions
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second...
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7345333 |
Double sided container process used during the manufacture of a semiconductor device
A method used during the formation of a semiconductor device comprises providing a wafer substrate assembly comprising a plurality of digit line plug contact pads and capacitor storage cell contact...
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7344977 |
Method of electroplating a substance over a semiconductor substrate
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second...
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7344826 |
Method for forming a capacitor
In a method for forming a photoresist pattern, a method for forming a capacitor, and a capacitor manufactured using the same, a light is selectively irradiated onto a selected portion of a...
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7339220 |
Memory device with surface-channel peripheral transistors
A method of forming a memory device (e.g., a DRAM) including array and peripheral circuitry. A plurality of undoped polysilicon gates 58 are formed. These gates 58 are classed into three...
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7332761 |
Method for fabricating capacitor of semiconductor device
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The semiconductor device includes: a bit line structure formed on a substrate and including stacked...
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7332404 |
Method of fabricating capacitor having metal electrode
In a method of fabricating a capacitor, an interlayer insulating layer is formed on a semiconductor substrate. A contact plug penetrating the interlayer insulating layer is formed. An oxidation...
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7320911 |
Methods of forming pluralities of capacitors
A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with...
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7312130 |
Methods of forming capacitor structures including L-shaped cavities
Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on...
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7300841 |
Capacitor and method of manufacturing the same
A capacitor includes a cylindrical storage electrode formed on a substrate. A ring-shaped stabilizing member encloses an upper portion of the storage electrode to structurally support the storage...
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7291538 |
Semiconductor memory device and manufacturing method of the same
In this semiconductor memory device, a potential clamping region having no insulation layer formed therein is provided in an insulation layer. More specifically, the potential clamping region is...
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7288454 |
Methods of forming capacitors for semiconductor memory devices and resulting semiconductor memory devices
Methods of forming capacitors include forming a first mold layer and a second mold layer on a substrate, forming storage electrodes through the mold layers, the storage electrodes arranged in rows...
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7285462 |
Semiconductor memory device with trench-type stacked cell capacitors and method for manufacturing the same
A DRAM is provided that can reduce the parasitic capacitance between trench-type stacked cell capacitors in a memory cell region and suppress malfunction caused by noise. The trench-type stacked...
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7282131 |
Methods of electrochemically treating semiconductor substrates
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second...
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7274059 |
Capacitor constructions
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps...
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7273778 |
Method of electroplating a substance over a semiconductor substrate
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second...
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7268382 |
DRAM cells
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the...
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7268380 |
Semiconductor device and method of manufacturing the same
The present invention provides a method of increasing designing freedom of a position to form a capacitor, and increasing a capacitance value thereof. When forming a first contact, a tungsten plug...
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7268034 |
Methods of forming pluralities of capacitors, and integrated circuitry
A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with...
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7259414 |
Integrated circuit, its fabrication process and memory cell incorporating such a circuit
This integrated circuit comprises a capacitor ( 23 ) formed above a substrate ( 1 ) inside a first cavity in a dielectric and comprising a first electrode, a second electrode, a thin dielectric...
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7253052 |
Method for forming a storage cell capacitor compatible with high dielectric constant materials
Described are integrated circuit electrodes and method for fabricating an electrode, which include, in an embodiment forming a silicon, first portion of the electrode in a lower region of a...
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7247902 |
Semiconductor device and method of manufacturing the same
A semiconductor device comprises a first metal layer, which comprises a buried metal layer connected to a diffusion layer within a substrate or to a lower-layer wiring. A first metal wiring layer,...
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7247537 |
Semiconductor device including an improved capacitor and method for manufacturing the same
In a semiconductor device according to embodiments of the invention, a capacitor includes a storage electrode having a cylindrical storage conductive layer pattern and connecting members formed on...
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7244655 |
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film
A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a...
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7238609 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device has the steps of forming a conductive film on a substrate, forming an insulating film such that the conductive film is covered with the insulating...
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7238585 |
Method of forming a storage electrode of a semiconductor device
In a storage electrode of a semiconductor device, and a method of forming the same, the storage electrode includes an outer cylinder including a first outer cylindrical portion having a first outer...
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7227215 |
Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing same
According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an...
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7226845 |
Semiconductor constructions, and methods of forming capacitor devices
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage...
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7226837 |
Semiconductor device and method for fabricating the same
A semiconductor device comprises: a lower contact electrode 1 ; an adhesion improving layer 3 formed on the lower contact electrode 1 ; and a capacitor including a lower electrode 4 in a...
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7224015 |
Method for making a stack of capacitors, in particular for dynamic random access memory [DRAM]
The invention concerns a method which consists in forming on a substrate ( 1 ) coated with a dielectric material layer ( 3 ) provided with a window ( 3 a ), a stack of successive layers alternately...
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7208368 |
Methods of forming spaced conductive regions, and methods of forming capacitor constructions
The invention includes a method of forming spaced conductive regions. A construction is formed which includes a first electrically conductive material over a semiconductor substrate. The...
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7205219 |
Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate
Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit...
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7199005 |
Methods of forming pluralities of capacitors
The invention comprises methods of forming pluralities of capacitors. In one implementation, metal is formed over individual capacitor storage node locations on a substrate. A patterned masking...
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7199004 |
Method of forming capacitor of semiconductor device
Disclosed is a method of forming a capacitor of a semiconductor device which can secure a desired leakage current characteristic while securing a desired charging capacitance. The inventive method...
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7199003 |
Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor
In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is...
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7192862 |
Semiconductor device and method of manufacturing the same
A manufacturing method of a semiconductor device comprises the steps of forming an etching stop insulating film ( 18 ) that covers at least side surfaces of a wiring ( 16 ) in a first region ( 2 )...
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7186593 |
Methods of fabricating integrated circuit devices having fuse structures including buffer layers
An integrated circuit device is provided including an integrated circuit substrate having a fuse region. A window layer is provided on the integrated circuit substrate that defines a fuse region....
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7179716 |
Method of forming a metal-containing layer over selected regions of a semiconductor substrate
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second...
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7179361 |
Method of forming a mass over a semiconductor substrate
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second...
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7170127 |
Semiconductor device and fabricating method thereof
The present invention provides a semiconductor device and fabricating method thereof, by which capacitance is enhanced by increasing an effective area of a lower electrode of a capacitor. The...
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7161204 |
DRAM capacitor structure with increased electrode support for preventing process damage and exposed electrode surface for increasing capacitor area
A method for fabricating a high-density array of crown capacitors with increased capacitance while reducing process damage to the bottom electrodes is achieved. The process is particularly useful...
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7158401 |
Methods for machine detection of at least one aspect of an object, methods for machine identification of a person, and methods of forming electronic systems
Electronic systems including Si/Ge substrates. The electronic systems can include data storage devices and/or logic devices having active regions extending into a crystalline Si/Ge material. An...
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7157764 |
Semiconductor device having isolation pattern in interlayer insulating layer between capacitor contact plugs and methods of fabricating the same
A semiconductor device having an isolation pattern inside an interlayer insulating layer between capacitor contact plugs and methods of fabrication the same: The semiconductor device includes an...
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7153707 |
Method for forming a storage cell capacitor compatible with high dielectric constant materials
An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an...
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7151039 |
Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same
In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group...
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