Matches 1 - 9 out of 9
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7414299 Semiconductor package assembly and method for electrically isolating modules  
A semiconductor package assembly and method for electrically isolating modules, having a capacitor within the semiconductor package assembly. The package assembly and method are suitable for...
7371680 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device is achieved by forming an interlayer insulating film on a conductive portion formed in a semiconductor substrate which is placed in a chamber. A...
7368373 Method for manufacturing semiconductor devices and plug  
A method for manufacturing a semiconductor device is disclosed suitable for a substrate having a first conducting structure and a first dielectric layer, wherein the dielectric layer covers the...
7285487 Method and apparatus for network with multilayer metalization  
A network for interconnecting processing element nodes which supports rich interconnection while having a number of switching elements which is linear in the number of processing elements...
7241684 Method of forming metal wiring of semiconductor device  
A method for forming a metal wiring of a semiconductor device. The method includes forming an etch stop layer on a semiconductor substrate, forming a first inter metal dielectric on the etch stop...
7238604 Forming thin hard mask over air gap or porous dielectric  
A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous...
7217650 Metallic nanowire interconnections for integrated circuit fabrication  
A method for fabricating an electrical interconnect between two or more electrical components. A conductive layer is provided on a substarte and a thin, patterned catalyst array is deposited on an...
6613667 Forming an interconnect of a semiconductor device  
Forming an interconnect of a semiconductor device includes defining a recessed structure proximate to an outer surface of a substrate of a semiconductor device. A metal layer is deposited within...
5587609 II-VI group compound semiconductor device metallic nitride ohmic contact for p-type  
A II-VI group compound semiconductor device having a p-type Zn x Mg 1 -x S y Se 1 -y (0≤x≤1, 0≤y≤1) semiconductor layer, on which an electrode layer is formed with at least metallic...
Matches 1 - 9 out of 9