Matches 1 - 38 out of 38
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7432538 Field-effect transistor  
A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula Al x Ga 1-x N,...
7429534 Etching a nitride-based heterostructure  
An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch...
7417267 Non-planar III-nitride power device having a lateral conduction path  
A III-nitride power semiconductor device that includes a heterojunction body with a sloping portion, a first power electrode, a second power electrode and a gate over the sloping portion of the...
7416929 Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same  
A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of...
7408182 Surface passivation of GaN devices in epitaxial growth chamber  
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more...
7374988 NFET and PFET devices and methods of fabricating same  
A field effect transistor and method of fabricating the field effect transistor. The field effect transistor, including: a gate electrode formed on a top surface of a gate dielectric layer, the...
7332810 Integrated circuit device and method of producing the same  
An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by...
7291873 High electron mobility epitaxial substrate  
A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers...
7276747 Semiconductor device having screening electrode and method  
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a screening electrode spaced apart from a channel region.
7268362 High performance transistors with SiGe strain  
A preferred embodiment of the invention comprises a semiconductor device having stress in the source/drain channel. The device comprises a substrate having a lattice constant greater than or equal...
7238985 Trench type mosgated device with strained layer on trench sidewall  
A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer...
7161179 Semiconductor device and method of manufacturing the same  
In a semiconductor device and a method of manufacturing the semiconductor device, the source wires 126 of a pixel portion 205 are formed of material having low resistance (representatively,...
7145167 High speed Ge channel heterostructures for field effect devices  
A method and a layered heterostructure for forming high mobility Ge channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, and...
7144765 Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof  
A semiconductor device and its manufacturing method. The semiconductor device has a semi-insulating GaAs substrate 310 , a GaAs buffer layer 321 that is formed on the semi-insulating GaAs...
7084507 Integrated circuit device and method of producing the same  
An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by...
7067855 Semiconductor structure having an abrupt doping profile  
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration...
6969875 Buried channel strained silicon FET using a supply layer created through ion implantation  
A buried channel FET including a substrate, a relaxed SiGe layer, a channel layer, a SiGe cap layer, and an ion implanted dopant supply. The ion implanted dopant supply can be in either the SiGe...
6949761 Structure for and method of fabricating a high-mobility field-effect transistor  
A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time,...
6905972 Semiconductor device and method for manufacturing the same  
A method of manufacturing a semiconductor device comprising a plurality of single-crystal semiconductor layers formed, for example, in an opening of an insulating film, said semiconductor layers...
6852600 Strained silicon MOSFET having silicon source/drain regions and method for its fabrication  
A strained silicon MOSFET utilizes a strained silicon layer formed on a silicon geranium layer. Strained silicon and silicon germanium are removed at opposing sides of the gate and are replaced by...
6723621 Abrupt delta-like doping in Si and SiGe films by UHV-CVD  
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration...
6674100 SiGeC-based CMOSFET with separate heterojunctions  
Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the...
6657223 Strained silicon MOSFET having silicon source/drain regions and method for its fabrication  
A strained silicon MOSFET utilizes a strained silicon layer formed on a silicon germanium layer. Strained silicon and silicon germanium are removed at opposing sides of the gate and are replaced by...
6593191 Buried channel strained silicon FET using a supply layer created through ion implantation  
A method of fabricating a buried channel FET including providing a relaxed SiGe layer on a substrate, providing a channel layer on the relaxed SiGe layer, providing a SiGe cap layer on the channel...
6555839 Buried channel strained silicon FET using a supply layer created through ion implantation  
A circuit including at least one strained channel, enhancement mode FET, and at least one strained channel, depletion mode FET. The depletion mode FET includes an ion implanted dopant supply. In...
6455871 SiGe MODFET with a metal-oxide film and method for fabricating the same  
There is disclosed a method for fabricating a SiGe MODFET device using a metal oxide film. The present invention provides a SiGe MODFET device with improved operation speed and reduced non-linear...
6399970 FET having a Si/SiGeC heterojunction channel  
Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the...
6306211 Method for growing semiconductor film and method for fabricating semiconductor device  
In a chamber, a substrate is mounted on a susceptor and then heated to an elevated temperature. Source and diluting gases are supplied into the chamber through source and diluting gas supply pipes...
6225196 High electron mobility transistor and method of fabricating the same  
There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of...
6190975 Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer  
Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the...
6117713 Method of producing a MESFET semiconductor device having a recessed gate structure  
An insulating layer is formed on a semiconductor substrate, and a first resist layer having a first resist opening portion is formed on the insulating layer. Then, the insulating layer is etched...
6049091 High electron mobility transistor  
There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of...
6004137 Method of making graded channel effect transistor  
A MISFET having a graded semiconductor alloy channel layer of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the...
5821577 Graded channel field effect transistor  
A MISFET having a graded semiconductor alloy channel layer of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the...
5442205 Semiconductor heterostructure devices with strained semiconductor layers  
A heterostructure includes a stained epitaxial layer of either silicon or germanium that is located overlying a silicon substrate, with a spatially graded Ge x Si 1 -x epitaxial layer overlain by...
5285088 High electron mobility transistor  
A semiconductor device capable of reducing element sizes exceedingly and a mask alignment accuracy in lithography is provided. This device has a pair of semiconductor layers for source/drain...
5274255 Structure for providing high resolution modulation of voltage potential in the vicinity of a surface  
A structure for modulating electrostatic potential in the vicinity of a surface of a structure comprises: a substrate; a first electrically conductive layer having an exposed surface and made of a...
5221413 Method for making low defect density semiconductor heterostructure and devices made thereby  
The present invention is predicated upon the discovery by applicants that by growing germanium-silicon alloy at high temperatures in excess of about 850° C. and increasing the germanium content at...
Matches 1 - 38 out of 38