Matches 451 - 497 out of 497 < 1 2 3 4 5 6 7 8 9 10
Match Document Document Title
4135292 Integrated circuit contact and method for fabricating the same  
An integrated circuit aluminum-silicon electrical contact may be fabricated in a diffusion region formed in a monocrystalline silicon semiconductor layer by converting the upper portion of the...
4133704 Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon  
Boron implantation regions in <100> N-type silicon are subjected to a severe damage implant before anneal in a strongly oxidizing atmosphere that provides a passivating silicon dioxide...
4130891 Methods of gray scale recording and archival memory target produced thereby  
One of a multiplicity of data values is permanently recorded at each data site in a two-dimensional data site array defined upon the surface of a semiconductor diode target by implanting an...
4128439 Method for forming self-aligned field effect device by ion implantation and outdiffusion  
A method is provided for making a field effect transistor which comprises forming a layer of an ion beam masking material on the surface of a semiconductor body of one-type conductivity having at...
4118250 Process for producing integrated circuit devices by ion implantation  
In this process of producing a bipolar transistor, all the regions of the device except the emitter region are formed by ion implantation through an inorganic dielectric layer of uniform thickness....
4118251 Process for the production of a locally high, inverse, current amplification in a planar transistor  
A process for the production of a locally high inverse current amplification in a preferably double diffused or implanted inversely operated transistor which includes forming a low doped epitaxial...
4111719 Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium  
A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom concentration of at least 1 × 10...
4110779 High frequency transistor  
A high-frequency transistor is provided having a small effective emitter width and a low base bulk resistance. The transistor is isolated from adjacent components by insulating material portions....
4107835 Fabrication of semiconductive devices  
An improved Schottky barrier connection is made to a desired region of a silicon wafer by implanting the region with ions to peak at a particular depth; depositing a suitable contact material, such...
4106953 Method of producing an ion implanted tuning diode  
Semiconductor devices with special reference to the process for fabricating tuning diodes. This invention includes the super-position of a multiplicity of ion implants and thermal redistribution...
4107719 Inverse planar transistor  
This invention relates to an inverse planar transistor in which a base region of one conductivity type is formed in a semiconductor body of the opposite conductivity type adjacent a planar surface...
4106954 Method of manufacturing transistors by means of ion implantation  
A method of manufacturing transistors by means of ion implantation is characterized by the implantation of a uniform extrinsic base zone, by providinbg a mask having at least two windows, and by...
4104784 Manufacturing a low voltage n-channel MOSFET device  
A novel MOSFET circuit and method of manufacture utilizing a double ion implant process for manufacturing a low voltage high performance n-channel device that includes an enhancement transistor...
4096622 Ion implanted Schottky barrier diode  
A Schottky barrier diode having a subsurface metalsemiconductor rectifying barrier with electrical rectification properties immune to semiconductor surface contamination. A special ion implantation...
RE29660 Process and product for making a single supply N-channel silicon gate device  
A process is described wherein an N-channel silicon gate device operates from a single voltage supply. This process includes an ion implantation step into the gate region of both the load and...
4092209 Silicon implanted and bombarded with phosphorus ions  
A composition of matter produced by a process wherein silicon is bombarded by phosphorus ions and phosphorus ions are implanted therein. A method for rendering silicon substantially unetchable in a...
4091408 High frequency ion implanted passivated semiconductor devices and mircowave intergrated circuits and planar processes for fabricating both  
The specification describes new high frequency ion implanted semiconductor devices, novel microwave integrated circuits employing same, and a planar fabrication process for both wherein initially...
4089020 High power semiconductor diode  
A semiconductor diode consists of a low resistivity n conductivity type semiconductor substrate, a high resistivity n conductivity type semiconductor layer, formed on the surface of the substrate,...
4070687 Composite channel field effect transistor and method of fabrication  
An improved composite channel field effect transistor and method of fabrication, which exhibits high density characteristics and yields high performance with less sensivity to threshold shift due...
4064620 Ion implantation process for fabricating high frequency avalanche devices  
Disclosed are new high frequency ion implanted passivated semiconductor devices and a planar fabrication process therefor wherein initially an ion implantation and PN junction passivation mask is...
4063964 Method for forming a self-aligned schottky barrier device guardring  
The method allows the formation of a self-aligned guardring surrounding a Schottky barrier device. The resulting guardring is as close to the Schottky barrier device as is possible. This reduces...
4053924 Ion-implanted semiconductor abrupt junction  
A semiconductor abrupt junction having a relatively heavily doped region of first conductivity type, a relatively lightly doped region of opposite conductivity type, and immediately adjacent the...
4045248 Making Schottky barrier devices  
A semiconductor device comprising a semiconductor body portion having a shallow surface layer which is higher doped than the bulk of the semiconductor body portion, and a metal electrode on this...
4045251 Process for producing an inversely operated transistor  
A process for producing an inversely operated transistor in a body of semiconductor material which has arranged on its surface collector, base and emitter zones and wherein the base is doped by ion...
4038106 Four-layer trapatt diode and method for making same  
A method for making a four-layer P+PNN+ or N+NPP+ diode, and the diode, wherein the impurity profile about the PN junction is optimally graded for TRAPATT operation throughout the span of the...
4033787 Fabrication of semiconductor devices utilizing ion implantation  
Semiconductor material stress sensors are provided where the sensing resistors therein have good electrical stability while being sufficiently protected without degrading sensor performance. This...
4033026 High density/high speed MOS process and device  
A process for fabricating MOS silicon gate transistors which provide high density and high speed devices. The process includes the use of a boron ion implantation step to prevent punch-through and...
4030943 Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits  
The specification describes new high frequency ion implanted semiconductor devices, novel microwave integrated circuits employing same, and a planar fabrication process for both wherein initially...
3979272 Method of producing semiconductor devices with minority charge carriers having a long lifetime and devices produced thereby  
A method of fabricating semiconductor devices having a long lifetime for the minority charge carriers by applying a voltage across one electrode composed of a piece of intrinsic semiconductor...
3966501 Process of producing semiconductor devices  
A silicon substrate is selectively implanted with ions and heated in a oxidizing atmosphere. Thus an oxide film is formed on the substrate so that portions of the film formed on regions implanted...
RE28704 Semiconductor devices  
A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity...
3921199 Junction breakdown voltage by means of ion implanted compensation guard ring  
The breakdown voltage of a semiconductor device with planar structure can be raised to the bulk breakdown level, if a high resistivity on lightly doped guard ring is formed around the priphery of...
3912545 Process and product for making a single supply N-channel silicon gate device  
A process is described wherein an N-channel silicon gate device operates from a single voltage supply. This process includes an ion implantation step into the gate region of both the load and...
3909307 Process for compensating boundary charges in silicon thin layers epitaxially grown on a substrate  
Process for compensating for the presence of boundary charges in semiconductor layers which are grown on a monocrystalline insulating substrate including the step of introducing doping atoms into...
3895392 Bipolar transistor structure having ion implanted region and method  
Bipolar transistor structure formed of a semiconductor body having a substantially planar surface with collector, base and emitter regions formed therein and a layer of insulating material on said...
3890163 Ultra high frequency transistors manufacturing process  
The production sequence of the UHF transistors includes at least one ion implantation step for doping the emitter, which takes place after doping of the base, through an emitter window etched from...
3856578 BIPOLAR TRANSISTORS AND METHOD OF MANUFACTURE  
A bipolar transistor is fabricated by a process which involves a two-step base formation and an emitter formed by diffusion or ion implantation. One processing step in forming the base is either a...
3655457 METHOD OF MAKING OR MODIFYING A PN-JUNCTION BY ION IMPLANTATION  
Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc.,...
3653978 METHOD OF MAKING SEMICONDUCTOR DEVICES  
A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity...
3635767 METHOD OF IMPLANTING IMPURITY IONS INTO THE SURFACE OF A SEMICONDUCTOR  
Disclosed is a method of implanting impurity ions wherein such ions are implanted into the surface of a semiconductor partially exposed by a hole in two layers, one being made of silicon oxide and...
3533857 METHOD OF RESTORING CRYSTALS DAMAGED BY IRRADIATION  
3534235 IGFET WITH OFFSET GATE AND BICONDUCTIVITY CHANNEL REGION  
2842466 Method of making p-nu junction semiconductor unit  
3589949 Title is not available  
3563809 Title is not available  
3728161 Title is not available  
3756861 Title is not available  
Matches 451 - 497 out of 497 < 1 2 3 4 5 6 7 8 9 10