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7595532 Semiconductor memory devices and methods of forming the same  
A semiconductor memory device includes a semiconductor substrate including an insulating layer, a charge storage region of a first conductivity type on the insulating layer, and an insulating film...
7585725 Use of dilute steam ambient for improvement of flash devices  
The present invention provides a flash memory integrated circuit and a method for fabricating the same. The method includes etching a gate stack that includes an initial oxide layer directly in...
7582924 Semiconductor devices having polymetal gate electrodes  
Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate...
7579244 Method of fabricating a semiconductor device  
The present invention provides a semiconductor device in which the gate is self-aligned to the device isolation film and a fabricating method thereof. A device isolation film restricting an active...
7579237 Nonvolatile memory device and method of manufacturing the same  
A method of manufacturing a nonvolatile memory device includes forming a plurality of device isolation regions in a semiconductor substrate, forming a tunneling insulation layer on the...
7573089 Non-volatile memory device  
Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel...
7566929 Nonvolatile memory devices having floating gate electrodes with nitrogen-doped layers on portions thereof  
Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a...
7566644 Method for forming gate electrode of semiconductor device  
A method for forming a gate electrode of a semiconductor device is provided wherein a hard mask layer which is a nitride film is deposited and subjected to an additional surface deposition process...
7566615 Methods of fabricating scalable two transistor memory devices  
A memory device includes a semiconductor substrate, a first gate insulator on a first portion of a semiconductor substrate, a storage node on the first gate insulator, a tunnel junction barrier on...
7563730 Hafnium lanthanide oxynitride films  
Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide...
7563674 Method of manufacturing NAND flash memory device  
A method of manufacturing a NAND flash memory device, wherein isolation layers are formed in a semiconductor substrate, and an upper side of each of the isolation layers is made to have a negative...
7560764 SONOS memory device having curved surface and method for fabricating the same  
A new SONOS memory device is provided, in which a conventional planar surface of multi-dielectric layers (ONO layers) is instead formed with a curved surface such as a cylindrical shape, and...
7560335 Memory device transistors  
Method and device embodiments are described for fabricating MOSFET transistors in a semiconductor also containing non-volatile floating gate transistors. MOSFET transistor gate dielectric smiling,...
7554150 Non-volatile memory device and method of manufacturing the same  
A non-volatile memory device includes isolation layers, a cell trench, a floating gate, a common source region and a word line. The isolation layers define an active region of a substrate. The cell...
7550347 Methods of forming integrated circuit device gate structures  
Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions...
7547940 Non-volatile memory devices suitable for LCD driver applications  
Non-volatile memory devices according to embodiments of the present invention include an EEPROM transistor in a first portion of a semiconductor substrate, an access transistor in a second portion...
7544604 Tantalum lanthanide oxynitride films  
Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide...
7544603 Method of fabricating silicon nitride layer and method of fabricating semiconductor device  
A method of fabricating a silicon nitride layer is described. First, a substrate is provided. Then, a silicon nitride layer is formed on the substrate. The silicon nitride layer is UV-cured in an...
7544564 Method of forming gate electrode pattern in semiconductor device  
A method for forming a semiconductor device includes forming a gate dielectric layer over a substrate; forming a first conductive layer over the substrate; forming a dielectric layer over the first...
7541295 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device according to one aspect of the present invention comprises: forming a gate insulation film on a semiconductor substrate in which element separation...
7541233 Semiconductor device and method of manufacturing the same  
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film...
7537987 Semiconductor device manufacturing method  
In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed,...
7525147 Memory structure  
A memory structure including a semiconductor substrate, an insulator layer formed on the semiconductor substrate and a gate layer formed on the insulator layer is disclosed. The insulator layer...
7521316 Methods of forming gate structures for semiconductor devices  
Methods of forming a semiconductor device may include forming a tunnel oxide layer on a semiconductor substrate, forming a gate structure on the tunnel oxide layer, forming a leakage barrier oxide,...
7514318 Method for fabricating non-volatile memory cells  
A method for fabricating non-volatile memory cells is provided. The method includes providing a substrate, forming a first dopant region in the substrate, forming a second dopant region in the...
7510931 Method of fabricating a nonvolatile memory device  
A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a...
7507626 Floating gate of flash memory device and method of forming the same  
Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex...
7504302 Process of forming a non-volatile memory cell including a capacitor structure  
A non-volatile memory cell can include a substrate, an active region overlying the substrate, and a capacitor structure overlying the substrate. From a plan view, the capacitor structure surrounds...
7501315 Methods and devices for forming nanostructure monolayers and devices including such monolayers  
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or...
7498217 Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers  
In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill...
7492001 High K stack for non-volatile memory  
A memory device may include a source region and a drain region formed in a substrate and a channel region formed in the substrate between the source and drain regions. The memory device may further...
7473599 Memory capable of storing information and the method of forming and operating the same  
A method for manufacturing a memory unit capable of storing multibits binary information. A gate is formed on a dielectric layer over a semiconductor substrate. Next, a first etching is performed...
7468535 Self-aligned integrated electronic devices  
A process for self-aligned manufacturing of integrated electronic devices includes: forming, in a semiconductor wafer having a substrate, insulation structures that delimit active areas and project...
7465675 Method of forming a phase change memory device having a small area of contact  
Methods of fabricating a phase change memory device having a small area of contact are provided. The method includes forming a lower interlayer insulating layer on a semiconductor substrate, and...
7462534 Methods of forming memory circuitry  
The invention includes methods of forming memory circuitry. In one implementation, a substrate is provided which has a memory array circuitry area and a peripheral circuitry area. The memory array...
7459748 Semiconductor memory device  
A semiconductor memory device includes: a semiconductor substrate; a semiconductor layer formed on the semiconductor substrate with an insulating film interposed therebetween, the semiconductor...
7453118 Non-volatile semiconductor memory device  
To propose a new channel structure suitable for high efficiency source side injection, and provide a non-volatile semiconductor memory device and a charge injection method using the same. The...
7445943 Magnetic tunnel junction memory and method with etch-stop layer  
Methods and apparatus are provided for magnetoresistive memories employing magnetic tunnel junction (MTJ). The apparatus comprises a MTJ ( 61, 231 ), first ( 60, 220 ) and second ( 66, 236 )...
7436019 Non-volatile memory cells shaped to increase coupling to word lines  
A non-volatile memory array has word lines coupled to floating gates, the floating gates having an upper portion that is adapted to provide increased surface area, and thereby, to provide increased...
7435654 Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same  
There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and...
7432204 Wafer and the manufacturing and reclaiming methods thereof  
A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate....
7429539 Nitriding method of gate oxide film  
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen...
7425482 Non-volatile memory device and method for fabricating the same  
A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a plurality of gate structures on a substrate, each gate structure including a first...
7419870 Method of manufacturing a flash memory device  
Provided is a method of manufacturing a flash memory device. In the method, after forming a cell string and source/drain selection transistors, it forms a first oxide film in which a sidewall oxide...
7416935 Method of manufacturing nonvolatile semiconductor memory device having adjacent selection transistors connected together  
A method of manufacturing a nonvolatile semiconductor memory device, including forming a gate insulating film, a first conductive layer providing floating gates and a mask, in that order, on a...
7410868 Method for fabricating a nonvolatile memory element and a nonvolatile memory element  
In a method for fabricating a nonvolatile memory element a substrate is provided, a nanomask structure is fabricated on the substrate and a self-assembled monolayer of an organic memory molecule is...
7396750 Method and structure for contacting two adjacent GMR memory bit  
A method and a structure are provided for improving the contact of two adjacent GMR memory bits. Two adjacent bit ends are connected by utilizing a single via.
7396727 Transistor of semiconductor device and method for fabricating the same  
A transistor which may effectively control the short channel effect with a vertical transistor structure. This structure may prevent the degradation of a transistor's performance caused by the hot...
7396721 Method of fabricating a semiconductor device  
According to the present invention, there is provided a semiconductor device fabrication method comprising: forming a first insulating film on a semiconductor substrate; forming a first...
7391078 Non-volatile memory and manufacturing and operating method thereof  
A non-volatile memory is provided. A substrate having a plurality of trenches and a plurality of select gates is provided. The trenches are arranged in parallel and extend in a first direction....
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