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7629619 Group III nitride-based compound semiconductor light-emitting device and method for producing the same  
A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer...
7626209 Light emitting diode having active region of multi quantum well structure  
Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At...
7622398 Semiconductor device, semiconductor layer and production method thereof  
A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less...
7622745 Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device  
A n-type GaAs buffer layer 2 , a n-type GaInP buffer layer 3 , a n-type AlGaInP cladding layer 4 , an undoped AlGaAs guide layer 5 , an AlGaAs/GaAs multiquantum well (MQW) active layer 6 , a...
7615804 Superlattice nitride semiconductor LD device  
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more...
7615796 Light emitting diode having an electrode buffer layer  
A light emitting diode (LED) utilizes an adhesive layer to adhere a light emitting layer to a substrate. The LED further comprises an electrode buffer layer to enhance the adhesion between the...
7601985 Semiconductor light-emitting device  
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
7589346 GaN based semiconductor light-emitting device and method for producing same  
A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second...
7586129 Single chip with multi-LED  
A single chip with multi-LED comprises a substrate on which an N-type semiconductor layer, an active layer and a P-type semiconductor layer are successively stacked. At least one N-type electrode...
7569863 Semiconductor light emitting device  
A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material...
7566910 GaN-based compound semiconductor light emitting device  
A GaN-based compound semiconductor light emitting device is provided. The semiconductor light emitting device includes a substrate; an n-type semiconductor layer formed on the substrate; an active...
7550775 GaN semiconductor light-emitting element and method for manufacturing the same  
A GaN semiconductor light-emitting element is provided. The GaN semiconductor light-emitting element includes an island-type seed region composed of a GaN-based compound semiconductor disposed on a...
7535026 Semiconductor light-emitting device with high brightness and low operating voltage  
A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current...
7531843 Structure of AC light-emitting diode dies  
A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED...
7528417 Light-emitting diode device and production method thereof  
A double hetero structure light-emitting diode device includes an active layer ( 6 ), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer ( 4 ), a window layer ( 9 )...
7529283 Nitride semiconductor laser device and method for fabrication thereof  
A nitride semiconductor light-emitting device includes a nitride semiconductor substrate of which at least part of a surface is formed from a nitride semiconductor and a nitride film semiconductor...
7518204 Semiconductor device  
A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride...
7514720 White light emitting device  
The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is...
7495261 Group III nitride semiconductor light-emitting device and method of producing the same  
A Group III nitride semiconductor light-emitting device includes a stacked structure 11 formed on a crystal substrate ( 100 ) to be removed from it and including two Group III nitride...
7482635 Gallium nitride-based compound semiconductor multilayer structure and production method thereof  
An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device...
7462876 Nitride semiconductor light emitting device  
Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an...
7456435 Light-emitting semiconductor device  
A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor...
7449723 Semiconductor device  
A semiconductor device is disclosed in which a barrier layer is deposited on the sides of the mesa. The barrier layer may comprise a semiconductor material. The barrier layer reduces diffusion of...
7396697 Semiconductor light-emitting device and method for manufacturing the same  
A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound...
7368757 Compound semiconductor and compound semiconductor device using the same  
A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2...
7365369 Nitride semiconductor device  
A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride...
7358538 Organic light-emitting devices with multiple hole injection layers containing fullerene  
The present invention provides layered hole injection structures including one or more layers of fullerenes for application in an organic electroluminescent device. The layered structures include a...
7351661 Semiconductor device having trench isolation layer and a method of forming the same  
A semiconductor device having a trench isolation layer in a semiconductor substrate is provided, wherein the trench isolation layer includes a silicon nitride liner, a silicon oxide liner; and a...
7352009 Light emitting nitride semiconductor device and method of fabricating the same  
There is provided a light emitting nitride semiconductor device including a substrate, a semiconductor layer of a first conductivity overlying the substrate, a light emitting layer overlying the...
7323721 Monolithic multi-color, multi-quantum well semiconductor LED  
A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength...
7323722 Semiconductor optical device  
In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second...
7315048 Method and apparatus for mixing light emitted by a plurality of solid-state light emitters  
In one embodiment, light emitted by a plurality of solid-state light emitters is mixed by mounting the plurality of solid-state light emitters on a transparent to translucent substrate so that they...
7312474 Group III nitride based superlattice structures  
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well...
7306964 Method of manufacturing a vertically-structured GaN-based light emitting diode  
The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode...
7297989 Diboride single crystal substrate, semiconductor device using this and its manufacturing method  
Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a...
7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device  
A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride...
7288783 Optical semiconductor device and method for fabricating the same  
Quantum dots are formed on a plurality of surfaces whose normal direction are different from each other. The quantum dots are formed on the surfaces normal to each other, whereby the polarization...
7279717 Light emitting device  
A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer...
7276742 Compound semiconductor light emitting device and its manufacturing method  
A compound semiconductor light emitting device for preparing a chip which improves the light extraction efficiency, enables mounting of easy positioning with only once wire bonding, and leads to a...
7274040 Contact and omnidirectional reflective mirror for flip chipped light emitting devices  
A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first...
7271424 Light-emitting diode with openings formed in a stacked structure  
A light-emitting diode has a sub-mount, a first conductivity type substrate deposed on the sub-mount, a reflector layer deposed between the sub-mount and the first conductivity type substrate, a...
7259406 Semiconductor optical element  
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant...
7244972 Semiconductor devices and method for manufacturing the same  
In a field effect transistor, an Si layer 11 , an SiC (Si 1−y C y ) channel layer 12 , a CN gate insulating film 13 made of a carbon nitride layer (CN) and a gate electrode 14 are deposited...
7224001 Semiconductor light source  
A semiconductor light source for illuminating a physical space has been invented. In various embodiments of the invention, a semiconductor such as and LED chip, laser chip, LED chip array, laser...
7211836 Group-III nitride semiconductor light-emitting device and production method thereof  
A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based...
7208338 Method of manufacturing semiconductor light emitting device  
A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type...
7208770 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)  
In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar...
7208752 Structure and manufacturing of gallium nitride light emitting diode  
A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added...
7196348 GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency  
Although there is provided a high light transmittance of an emitted light by a ITO electrode film conventionally employed, there occurs a formation of a Schottky type contact between the ITO...
7183584 Quantum well structure and semiconductor device using it and production method of semiconductor element  
A semiconductor element excellent in luminous efficiency which sufficiently eliminates the effect of a piezo-electric field with the crystallinity of an active layer well retained. A quantum well...
Matches 1 - 50 out of 393 1 2 3 4 5 6 7 8 >