|
Match
|
Document |
Document Title |
|
|
7622745 |
Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device
A n-type GaAs buffer layer 2 , a n-type GaInP buffer layer 3 , a n-type AlGaInP cladding layer 4 , an undoped AlGaAs guide layer 5 , an AlGaAs/GaAs multiquantum well (MQW) active layer 6 , a...
|
|
|
7608862 |
Light emitting device and a lighting apparatus
A light emitting device comprises at least two lead wires, a light emitting element that is disposed on an end portion of at least one of said lead wires and connected electrically with the end...
|
|
|
7602116 |
Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof
A light apparatus is capable of emitting light of multiple wavelengths using a nanometer fluorescent material. The light apparatus comprises an initial light source that emits initial color light....
|
|
|
7601985 |
Semiconductor light-emitting device
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
|
|
|
7589357 |
Semiconductor device and method of fabricating the same
A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on...
|
|
|
7586129 |
Single chip with multi-LED
A single chip with multi-LED comprises a substrate on which an N-type semiconductor layer, an active layer and a P-type semiconductor layer are successively stacked. At least one N-type electrode...
|
|
|
7576365 |
Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride...
|
|
|
7575946 |
Method for making compound semiconductor and method for making semiconductor device
In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes...
|
|
|
7569863 |
Semiconductor light emitting device
A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material...
|
|
|
7560738 |
Light-emitting diode array having an adhesive layer
A light-emitting diode array includes a substrate, an adhesive layer formed on the substrate, and a plurality of electrically connected epitaxial light-emitting stack layer disposed on the adhesive...
|
|
|
7553685 |
Method of fabricating light-emitting device and light-emitting device
A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24 , and is designed so as to...
|
|
|
7550776 |
Light generating semiconductor device and method of making the same
In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light...
|
|
|
7550775 |
GaN semiconductor light-emitting element and method for manufacturing the same
A GaN semiconductor light-emitting element is provided. The GaN semiconductor light-emitting element includes an island-type seed region composed of a GaN-based compound semiconductor disposed on a...
|
|
|
7547910 |
Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device
Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device ( 11 ),...
|
|
|
7538395 |
Method of forming low capacitance ESD device and structure therefor
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
|
|
|
7535026 |
Semiconductor light-emitting device with high brightness and low operating voltage
A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current...
|
|
|
7531840 |
Light emitting diode with metal coupling structure
An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at...
|
|
|
7528418 |
Light-emitting device
It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The...
|
|
|
7528417 |
Light-emitting diode device and production method thereof
A double hetero structure light-emitting diode device includes an active layer ( 6 ), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer ( 4 ), a window layer ( 9 )...
|
|
|
7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
|
|
|
7525129 |
Organic light-emitting display
It is an object of the present invention to provide an organic light-emitting display of high light-emitting efficiency. The organic light-emitting element comprising a board, upper electrode,...
|
|
|
7518154 |
Nitride semiconductor substrate and semiconductor element built thereon
A substrate system of the kind having a buffer region interposed between a silicon substrate proper and a nitride semiconductor region in order to make up for a difference in linear expansion...
|
|
|
7514720 |
White light emitting device
The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is...
|
|
|
7508010 |
Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode
A boron phosphide-based compound semiconductor device with excellent device properties, comprising a boron phosphide-based compound semiconductor layer having a wide bandgap is provided. The boron...
|
|
|
7508001 |
Semiconductor laser device and manufacturing method thereof
The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a...
|
|
|
7507598 |
Image sensor fabrication method and structure
A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond...
|
|
|
7501664 |
III-Nitride compound semiconductor light emitting device
The present invention provides a III-nitride compound semiconductor light emitting device comprising an active layer ( 30 ) which emits light and is interposed between a lower contact layer ( 20 )...
|
|
|
7498607 |
Epi-structure with uneven multi-quantum well and the method thereof
An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with...
|
|
|
7495262 |
Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same
An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor...
|
|
|
7495261 |
Group III nitride semiconductor light-emitting device and method of producing the same
A Group III nitride semiconductor light-emitting device includes a stacked structure 11 formed on a crystal substrate ( 100 ) to be removed from it and including two Group III nitride...
|
|
|
7482635 |
Gallium nitride-based compound semiconductor multilayer structure and production method thereof
An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device...
|
|
|
7473936 |
Light emitting diodes (LEDs) with improved light extraction by roughening
Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the...
|
|
|
7473935 |
White-light emitting semiconductor device
A white-light emitting semiconductor device includes a first light-emitting die, a second light-emitting die, a photostimulable luminescent substance, and a holding assembly. The first...
|
|
|
7465954 |
Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure...
|
|
|
7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
A boron phosphide-based semiconductor device enhanced in properties includes a substrate ( 11 ) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron...
|
|
|
7462876 |
Nitride semiconductor light emitting device
Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an...
|
|
|
7439546 |
Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as...
|
|
|
7435660 |
Migration enhanced epitaxy fabrication of active regions having quantum wells
Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using controlled group V fluxes and...
|
|
|
7432523 |
Semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head
A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A...
|
|
|
7429756 |
Nitride semiconductor light emitting device
A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes: an n-type nitride semiconductor layer; an Incontaining super lattice structure...
|
|
|
7400000 |
Nitride-based semiconductor device
A light-emitting diode is built on a silicon substrate doped with a p-type impurity to possess sufficient conductivity to provide a current path. The p-type silicon substrate has epitaxially grown...
|
|
|
7368757 |
Compound semiconductor and compound semiconductor device using the same
A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2...
|
|
|
7345315 |
Gallium nitride based light-emitting device
A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant...
|
|
|
7345300 |
Phosphorescent light-emitting component comprising organic layers
The invention relates to a light emitting component with organic layers and emission of triplet exciton states (phosphorescent light) with increased efficiency, having a layer sequence with a hole...
|
|
|
7332364 |
Method of fabricating a Zn-base semiconductor light emitting device
A p-n junction interface 3 is formed between an n-type ZnTe 1-x O x (0.5≦x≦1) layer 8 and a p-type ZnTe 1-x O x (0≦x<0.5) layer 7 , and the n-type ZnTeO layer 8 and/or p-type...
|
|
|
7323722 |
Semiconductor optical device
In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second...
|
|
|
7319248 |
High brightness light emitting diode
The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an...
|
|
|
7315048 |
Method and apparatus for mixing light emitted by a plurality of solid-state light emitters
In one embodiment, light emitted by a plurality of solid-state light emitters is mixed by mounting the plurality of solid-state light emitters on a transparent to translucent substrate so that they...
|
|
|
7312474 |
Group III nitride based superlattice structures
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well...
|
|
|
7294862 |
Photonic crystal light emitting device
A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device...
|