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7618834 |
Method of manufacturing image sensor
Embodiments relate to a method of manufacturing an image sensor which includes forming a plurality of lower layers over a semiconductor substrate. A first passivation layer may be formed over the...
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7616672 |
Semiconductor light emitting device and manufacturing method therefor
A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the...
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7615789 |
Vertical light emitting diode device structure
A vertical light-emitting diode (VLED) structure that may impart increased luminous efficiency over conventional LEDs and VLEDs is described. As additional benefits, some embodiments may have less...
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7615772 |
Nitride semiconductor LED and fabrication method thereof
A nitride semiconductor LED includes a substrate; a GaN-based buffer layer formed on the substrate; Al y Ga 1−y N/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer...
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7612362 |
Nitride semiconductor light emitting device
A nitride semiconductor light emitting device includes a substrate, and a first n-type nitride semiconductor layer, a light emitting layer, a first p-type nitride semiconductor layer, a second...
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7612361 |
Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method
The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal...
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7608862 |
Light emitting device and a lighting apparatus
A light emitting device comprises at least two lead wires, a light emitting element that is disposed on an end portion of at least one of said lead wires and connected electrically with the end...
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7608853 |
Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same
Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that...
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7608525 |
Method for manufacturing nitride semiconductor substrate
A method for manufacturing a nitride semiconductor substrate comprises the steps of: growing a first nitride semiconductor on a substrate, patterning the first nitride semiconductor to obtain a...
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7601985 |
Semiconductor light-emitting device
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
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7601979 |
Gallium nitride-based compound semiconductor multilayer structure and production method thereof
An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device...
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7598530 |
Light emitting diode with high illumination
A light emitting diode ( 80 ) includes a first and a second semiconductor structures ( 30, 40 ), and an adhesive layer ( 34, 46 ) between the first and the second semiconductor structures. The...
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7592634 |
LED fabrication via ion implant isolation
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type...
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7592632 |
Light emitting device and display device using the same
A small-sized and high-efficiency light emitting device capable of easily emitting green light includes a resonator including a photonic crystal having a refractive-index periodic structure and a...
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7592630 |
Nitride-based light-emitting device and method of manufacturing the same
A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based...
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7589357 |
Semiconductor device and method of fabricating the same
A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on...
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7582912 |
Diode having high brightness and method thereof
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN...
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7582910 |
High efficiency light emitting diode (LED) with optimized photonic crystal extractor
A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the...
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7579200 |
Semiconductor light emitting apparatus and method of fabricating the same
A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It...
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7576364 |
Display device and method of manufacturing the same
A display device and its method of manufacture. The display device is formed to include a substrate having an upper surface, a recess region having a bottom surface and sidewalls, a light-emitting...
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7576363 |
Group III nitride compound semiconductor light emitting device
In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer...
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7573189 |
Illumination system comprising a radiation source and a fluorescent material
The invention relates to an illumination system comprising a radiation source and a fluorescent material comprising at least one phosphor capable of absorbing a portion of the light emitted by the...
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7569866 |
Semiconductor light-emitting device
A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad...
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7569862 |
Semiconductor light-emitting device and a method of manufacture thereof
A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure ( 16 ) fabricated in a nitride materials system and including an...
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7566908 |
Gan-based and ZnO-based LED
Light emitting diodes (LEDs) with various electrode structures which preferably provide increased performance. In some embodiments the LEDs are GaN-based and in some embodiments the LEDs are...
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7564069 |
Light-emitting diode including pit therein
A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a first substrate. An illuminant epitaxial structure is deposited on a surface of...
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7564064 |
Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion
An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using...
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7560739 |
Micro or below scale multi-layered heterostructure
A heteostructure having a first and a second layer, in micrometer or smaller (e.g. nanometer) scale, arranged in a configuration defining at least one undercut at one side of the second layer,...
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7554127 |
Semiconductor light-emitting element and method of manufacturing the same
Disclosed is a semiconductor light-emitting element, comprising an n-type cladding layer; a light guide layer positioned on the n-type cladding layer; a multiple quantum well structure active layer...
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7553691 |
Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top...
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7550775 |
GaN semiconductor light-emitting element and method for manufacturing the same
A GaN semiconductor light-emitting element is provided. The GaN semiconductor light-emitting element includes an island-type seed region composed of a GaN-based compound semiconductor disposed on a...
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7547926 |
Heterojunction with linkages between an electron donor and an electron acceptor in a blend
An electronic device comprising a heterojunction, wherein the heterojunction comprises a blend comprising an electron donor and an electron acceptor; and wherein the blend is treated so as to form...
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7547910 |
Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device
Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device ( 11 ),...
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7541622 |
Super luminescent diode and manufacturing method thereof
To provide a superluminescent diode capable of emitting high output super luminescent light having a central wavelength within a range of 0.95 μm to 1.2 μm and an undistorted beam cross section,...
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7541621 |
Semiconductor light emitting device having a current narrowing portion and manufacturing method for semiconductor light emitting device
A semiconductor light emitting device includes a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; and a second...
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7541206 |
Nitride-based semiconductor light-emitting device and method of manufacturing the same
A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the...
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7538395 |
Method of forming low capacitance ESD device and structure therefor
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
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7535026 |
Semiconductor light-emitting device with high brightness and low operating voltage
A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current...
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7529283 |
Nitride semiconductor laser device and method for fabrication thereof
A nitride semiconductor light-emitting device includes a nitride semiconductor substrate of which at least part of a surface is formed from a nitride semiconductor and a nitride film semiconductor...
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7528417 |
Light-emitting diode device and production method thereof
A double hetero structure light-emitting diode device includes an active layer ( 6 ), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer ( 4 ), a window layer ( 9 )...
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7528416 |
Vertical structure LED and fabricating method thereof
A vertical structure light emitting diode (LED) and a fabricating method thereof is disclosed, wherein a metal support layer is formed on an upper surface of a light emitting structure by way of...
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7528403 |
Hybrid silicon-on-insulator waveguide devices
Device designs and techniques for providing efficient hybrid silicon-on-insulator devices where a silicon waveguide core or resonator is clad by the insulator and a top functional cladding layer in...
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7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
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7521729 |
Nitride semiconductor laser element having impurity introduction region
A nitride semiconductor laser element, has: a nitride semiconductor layer including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer laminated in that...
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7521721 |
Surface-emitting type device and its manufacturing method
A surface-emitting type device includes a substrate including a first face and a second face that is tilted with respect to the first face and has a plane index different from a plane index of the...
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7518153 |
Nitride semiconductor light emitting device
A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the...
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7518152 |
Light-emitting element having PNPN-structure and light-emitting element array
A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a...
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7514720 |
White light emitting device
The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is...
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7511311 |
Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type...
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7511308 |
Light emitting device and method for fabricating the same
A light emitting device and a method for fabricating the same are disclosed, whereby a thin mask film is changed to agglomerates by a simple thermal treatment process, and a plurality of nano...
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