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7375380 Semiconductor light emitting device  
A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an...
7372078 Vertical gallium-nitride based light emitting diode  
A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a...
7368757 Compound semiconductor and compound semiconductor device using the same  
A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2...
7361938 Luminescent ceramic for a light emitting device  
A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light...
7358537 Light emitting diode and fabrication method thereof  
A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type...
7352009 Light emitting nitride semiconductor device and method of fabricating the same  
There is provided a light emitting nitride semiconductor device including a substrate, a semiconductor layer of a first conductivity overlying the substrate, a light emitting layer overlying the...
7348600 Nitride semiconductor device, and its fabrication process  
The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different...
7345324 Light emitting diodes with graded composition active regions  
A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region...
7332365 Method for fabricating group-III nitride devices and devices fabricated using method  
A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first...
7321191 Phosphor blends for green traffic signals  
There is provided a blue-green illumination system, including a semiconductor light emitter, and a luminescent material, wherein the system has an emission with CIE color coordinates located within...
7321132 Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same  
A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron...
7320898 Semiconductor laser device and method for fabricating the same  
A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of...
7319247 Light emitting-diode chip and a method for producing same  
An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence ( 3 ) is provided on substantially the full area of its p-side ( 9 ) with a...
7319249 Light emitting element and method of making same  
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al X In Y Ga (1−X−Y) ) 2 O 3 where...
7317211 Light-emitting device, light-emitting apparatus, image display apparatus, method of manufacturing light-emitting device, and method of manufacturing image display apparatus  
Light-emitting devices, light-emitting apparatuses, image display apparatuses and methods of manufacturing same are provided. The devices and apparatuses include a transparent electrode that is...
7315050 Semiconductor device, semiconductor layer and production method thereof  
A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less...
7294862 Photonic crystal light emitting device  
A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device...
7294866 Flip-chip light-emitting device with micro-reflector  
A Flip-chip light-emitting device with integral micro-reflector. The flip-chip light-emitting device emits reflected light provided by a light-emitting layer. The micro-reflector reflects light...
7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device  
A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride...
7285801 LED with series-connected monolithically integrated mesas  
A light emitting semiconductor device die ( 10, 110, 210, 310 ) includes an electrically insulating substrate ( 12, 112 ). First and second spatially separated electrodes ( 60, 62, 260, 262, 360,...
7282744 III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier  
A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region,...
7282745 Nitride based semiconductor light-emitting device  
The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer...
7279716 Single-chip LED with three luminescent spectrums of red, blue and green wavelengths  
The present invention relates to a single-chip light-emitting diode (LED) with three luminescent spectrums of red, blue and green wavelengths. The single-chip light-emitting diode of the invention...
7279718 LED including photonic crystal structure  
A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters...
7279698 System and method for an optical modulator having a quantum well  
The optical modulator may include a strained layer of SiGe to confine carriers in a quantum well. The strained layer of SiGe may be doped with arsenic to provide electrons. The optical modulator...
7276742 Compound semiconductor light emitting device and its manufacturing method  
A compound semiconductor light emitting device for preparing a chip which improves the light extraction efficiency, enables mounting of easy positioning with only once wire bonding, and leads to a...
7276735 Laminated semiconductor substrate and optical semiconductor element  
A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first...
7276391 Manufacture of a semiconductor device  
A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers ( 11,13,15,17 ) with each pair of barrier...
7274041 Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials  
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing...
7271417 Light-emitting element with porous light-emitting layers  
The invention relates to a light-emitting element with porous light-emitting layers. The light-emitting element comprises: a substrate, a first conductive cladding layer, a second conductive...
7271418 Semiconductor apparatus for white light generation and amplification  
The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up...
7268371 Light extraction from a semiconductor light emitting device via chip shaping  
A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to...
7262436 III-nitride semiconductor light emitting device having a silver p-contact  
A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type...
7259398 Semiconductor light emitting apparatus and method of fabricating the same  
A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It...
7259399 Vertical GaN-based LED and method of manufacturing the same  
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN...
7259406 Semiconductor optical element  
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant...
7256416 Semiconductor light emitting device  
Causing the growth of a GaN material with respect to a sapphire substrate using a conventional technique is inevitably followed by the occurrence of dislocations. Using a mask layer results in that...
7253452 Blue light emitting semiconductor nanocrystal materials  
A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals...
7253015 Low doped layer for nitride-based semiconductor device  
A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode...
7250631 Semiconductor laser having protruding portion  
A semiconductor laser device including: semiconductor layers including an n-type semiconductor layer, an active layer and a p-type semiconductor layer, the semiconductor layers having a...
7250320 Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof  
A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method...
7244997 Magneto-luminescent transducer  
An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from...
7244964 Light emitting device  
An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the...
7242026 Semiconductor light-emitting device  
A semiconductor light-emitting device includes a semiconductor light-emitting thin film, the thickness h of which satisfies the following conditional equation: 0.9 × ( 2 ⁢ m + 1 ) ⁢ λ 0 4...
7235816 Semiconductor light emitter  
A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well...
7235809 Semiconductor channel on insulator structure  
A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric...
7235819 Semiconductor device having group III nitride buffer layer and growth layers  
An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth...
7233028 Gallium nitride material devices and methods of forming the same  
The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon....
7230263 Gallium nitride compound semiconductor element  
In a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer...
7227177 Doped semiconductor nanocrystals  
A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
Matches 101 - 150 out of 850 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >