Patents in Class 257/94

Matches 51 - 100 out of 847

Match	Document	Document Title
51	7514720	White light emitting device The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is...
52	7511308	Light emitting device and method for fabricating the same A light emitting device and a method for fabricating the same are disclosed, whereby a thin mask film is changed to agglomerates by a simple thermal treatment process, and a plurality of nano...
53	7511311	Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type...
54	7508010	Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode A boron phosphide-based compound semiconductor device with excellent device properties, comprising a boron phosphide-based compound semiconductor layer having a wide bandgap is provided. The boron...
55	7504664	Semiconductor optical device having an improved current blocking layer and manufacturing method thereof A semiconductor optical device includes an active layer, a current blocking layer on both sides of the active layer, and a cladding layer on both the active layer and the current blocking layer....
56	7501663	Semiconductor light-emitting device, and image display device and lighting unit comprising same A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown...
57	7498612	Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof A pn-heterojunction compound semiconductor light-emitting device includes a crystalline substrate 101, a lower cladding layer 102 formed on a surface of the crystalline substrate and composed...
58	7498607	Epi-structure with uneven multi-quantum well and the method thereof An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with...
59	7495262	Compound semiconductor, method for producing the same, semiconductor light-emitting device and method for fabricating the same An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor...
60	7495261	Group III nitride semiconductor light-emitting device and method of producing the same A Group III nitride semiconductor light-emitting device includes a stacked structure 11 formed on a crystal substrate ( 100 ) to be removed from it and including two Group III nitride...
61	7488613	Nitride-based light-emitting device and method of manufacturing the same A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based...
62	7488987	Boron phosphide-based semiconductor light-emitting device and production method thereof A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer...
63	7488988	Light emitting device and method of forming the same A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an...
64	7482617	Optical semiconductor device and fabrication method thereof In order to prevent As/P replacement at the boundary face of a re-grown semiconductor layer and avoid a crystalline defect caused by the replacement, there is provided an optical semiconductor...
65	7482189	Light emitting diode and method of fabricating the same A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED...
66	7482634	Monolithic array for solid state ultraviolet light emitters The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base...
67	7479448	Method of manufacturing a light emitting device with a doped active layer Oxygen is doped in a quantum well active layer. First, an n-type In 0.02 Ga 0.98 N barrier layer 550 of 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, O 2 at 20 sccm, and NH 3 at...
68	7479658	Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and...
69	7476910	Semiconductor light emitting device and method for manufacturing the same In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a...
70	7473936	Light emitting diodes (LEDs) with improved light extraction by roughening Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the...
71	7473150	Zinc oxide N-I-N electroluminescence device A method is provided for forming a ZnO Si N—I—N EL device. The method comprises: forming an n-doped Si layer; forming a Si oxide (SiO2) layer overlying the n-doped Si layer; forming an n-type...
72	7473935	White-light emitting semiconductor device A white-light emitting semiconductor device includes a first light-emitting die, a second light-emitting die, a photostimulable luminescent substance, and a holding assembly. The first...
73	7465954	Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure...
74	7465499	Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer A boron phosphide-based semiconductor device enhanced in properties includes a substrate ( 11 ) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron...
75	7462882	Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface...
76	7462861	LED bonding structures and methods of fabricating LED bonding structures An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent...
77	7462884	Nitride semiconductor device A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor...
78	7456435	Light-emitting semiconductor device A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor...
79	7453091	Gallium nitride-based semiconductor device A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type...
80	7453100	DFB laser assembly and laser module A DFB laser assembly including both a DFB laser device, with a buried heterostructure having a cavity length of 400 μm, a differential resistance of 4Ω, an emission wavelength of 1550 nm, and a...
81	7449722	Semiconductor light emitting element A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading...
82	7439546	Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as...
83	7432531	Semiconductor device A semiconductor device, which can accurately control carrier density, includes: a single crystal substrate; a semiconductor layer which is made of hexagonal crystal with 6 mm symmetry and is formed...
84	7432523	Semiconductor composite device, LED head that employs the semiconductor composite device, and image forming apparatus that employs the LED head A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A...
85	7432535	Semiconductor light emitting device A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers....
86	7429755	High power light emitting diode A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a...
87	7423284	Light emitting device, method for making the same, and nitride semiconductor substrate A light-emitting device includes a GaN substrate; a n-type Al x Ga 1-x N layer on a first main surface side of the GaN substrate; a p-type Al x Ga 1-x N layer positioned further away from the GaN...
88	7420998	Semiconductor laser device A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of...
89	7420204	Organic transistor An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic...
90	7408199	Nitride semiconductor laser device and nitride semiconductor device A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising...
91	7402838	Nitride semiconductor device According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can...
92	7397069	Semiconductor device A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer,...
93	7394112	Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping...
94	7393411	β-Ga₂O₃single crystal growing method, thin-film single crystal growing method, Ga₂O₃light-emitting device, and its manufacturing method A method for growing a β-Ga 2 O 3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high...
95	7385227	Compact light emitting device package with enhanced heat dissipation and method for making the package A light emitting device package and method for making the package utilizes a first leadframe having a first surface and a second leadframe having a second surface that are relatively positioned...
96	7382035	Schottky diode with low leakage current and fabrication method thereof A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type...
97	7378680	Migration enhanced epitaxy fabrication of quantum wells Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced...
98	7375380	Semiconductor light emitting device A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an...
99	7372078	Vertical gallium-nitride based light emitting diode A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a...
100	7368757	Compound semiconductor and compound semiconductor device using the same A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2...

Matches 51 - 100 out of 847

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