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5838025 |
Electrical barrier structure for semiconductor device doped with chromium and/or titanium
A semiconductor device, preferably a laser device such as a signal generator, a signal amplifier or a signal detector e.g. a distributed feedback laser, which is implemented in III/V...
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5828086 |
Semiconductor light emitting device with a Mg superlattice structure
A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first...
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5825052 |
Semiconductor light emmitting device
A semiconductor light emitting device comprising: a substrate; and a gallium nitride type compound semiconductor layers provided on the substrate, the semiconductor layers including at least an...
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5825053 |
Heterostructure III-V nitride semiconductor device including InP substrate
In a heterostructure III-V nitride semiconductor device, an InP substrate has a surface having a sloped angle of 0° to 16° with respect to a (100) surface thereof. At least one GaN layer is...
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5821568 |
Cleaved semiconductor device with {11-20} plane
A semiconductor device such as a semiconductor layer is formed of a compound semiconductor layer of III-V group such as GaN. In the case where the substrate has not any planes that are easy to...
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5821571 |
Dual sided integrated electro-optical package
An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof,...
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5814838 |
Light emitting semiconductor element with ZN doping
An LED is disclosed which has a laminated semiconductor body with an anode and a cathode formed on a pair of opposite faces thereof. Among the layers of the semiconductor body are an active layer...
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5815520 |
light emitting semiconductor device and its manufacturing method
The present invention discloses a highly bright short wavelength light emitting semiconductor device with high reliance having improved crystallinity and surface smoothness. The device comprises at...
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5804840 |
Semiconductor device structure including InAlAs or InAlGaAs current blocking layers
A method of fabricating a semiconductor device includes forming a stripe-shaped first insulating film on a semiconductor layer; using the first insulating film as a mask, etching the semiconductor...
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5804839 |
III-V nitride compound semiconductor device and method for fabricating the same
A Ill-V nitride compound semiconductor device of the present invention includes: at least one III-V nitride compound semiconductor layer; and an electrode layer made of non-single crystalline GaN...
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5801403 |
Low divergence laser diode
The cavity of a laser diode is made longer than that which would be dictated by consideration of maximizing the efficiency of the diode. The lateral divergence of the emitted light beam is...
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5793054 |
Gallium nitride type compound semiconductor light emitting element
A gallium nitride type compound semiconductor light emitting element, such as a semiconductor laser, a light emitting diode is constructed by forming an In 0 .06 Ga 0 .94 N buffer layer, an n-type...
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5793061 |
Group-III nitride based light emitter
A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer....
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5790580 |
Semiconductor optical integrated device
The invention provides a semiconductor optical integrated device which includes (a) a semiconductor layer, (b) a plurality of masks formed on the semiconductor layer, each of the masks having a...
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5767535 |
Quantum layer structure
Disclosed is a quantum layer structure, in particular, for lasers or detectors, having at least four semiconductor layers (S1, S2, S3, S4), with at least two internal layers (S2, S3) being disposed...
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5764842 |
Semiconductor guided-wave optical device and method of fabricating thereof
After a shadow mask that is separate from a semiconductor substrate is used and is arranged over the semiconductor substrate via a wafer holder installed in a reaction chamber of a vapor-phase...
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5760422 |
Light-emitting diode chip and light-emitting diode using the same
An InGaAlP-type light-emitting diode chip (1) includes a plurality of material layers (2-6) in lamination. The chip has a rectangular surface perpendicular to the laminating direction of the...
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5753939 |
Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed
A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure....
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5753966 |
Semiconductor device with cleaved surface
A semiconductor light emitting device is prepared by the steps of forming a semiconductor layer 2 having a laminated structure containing at least a first cladding layer 6, a light emitting layer...
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5744829 |
A1GaInP light emitting diode
An AlGaInP light-emitting diode includes a double hetero-junction light-emitting structure of (Al x Ga 1 -x) y In 1 -y P on a GaAs substrate. A multi-film reflection layer is provided between the...
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5744828 |
Semiconductor light emitting device with blocking layer
A semiconductor light emitting device has a semiconductor substrate (1). On a first principal plane of the substrate, an emission layer is formed. In a predetermined region on the emission layer, a...
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5739553 |
Algainp light-emitting device
The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al 0 .7 Ga 0 .3) 0 .51 In 0 .49 P...
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5739552 |
Semiconductor light emitting diode producing visible light
A method of fabricating a light emitting diode (LED) device producing visible light includes growing layers of an LED emitting blue light to form a blue LED; growing layers of an LED emitting green...
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5726464 |
Light emitting device using porous semi-conductor material
A light emitting device comprises a luminous region comprising a luminous porous material comprising a crystalline semiconductor, and a non-porous region adjacent to the luminous region, wherein a...
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5717226 |
Light-emitting diodes and method of manufacturing the same
A surface-emitting AlGaInP LED is disclosed. The manufacturing method comprises the steps of: (i) forming a buffer layer, a first type of AlGaInP cladding layer, a AlGaInP active layer, a second...
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5714772 |
Method of manufacturing light converter with amorphous-silicon pin heterojunction diode
A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a...
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5710440 |
Semiconductor light emitting element with In GaAlP active layer of specified thickness
A semiconductor light emitting element comprising an n-type semiconductor substrate and a light emitting part comprising an n-type cladding layer composed of an InGaAlP compound semiconductor...
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5705834 |
Increased efficiency LED
In an LED a large portion of the light produced is lost due to total internal reflection at the air-semiconductor interface. A reverse taper of the semiconductor is used to change the angle at...
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5705831 |
Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method
According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn 1 -x Cd x Se (where 0<x<0.35) is provided. The...
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5693965 |
Laser diode having narrowed radiation angle characteristic
An active layer 102 and a clad layer 103 are formed on a semiconductor substrate 101. The active layer including an optical guide layer and an optical confinement layer/formed so that the thickness...
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5693963 |
Compound semiconductor device with nitride
A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown...
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5689603 |
Optically interactive nanostructure
Optically interactive nanostructural element. The element includes a semiconductor substrate including at least one radiation guide region extending into the substrate. The geometry of the...
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RE35665 |
Surface light emitting diode with electrically conductive window layer
A surface emitting AlGaInP LED having an ITO layer as a window layer to eliminate the current crowding effect, and an ohmic contact layer between its double hereto-structure of AlGaInP and the ITO...
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5686738 |
Highly insulating monocrystalline gallium nitride thin films
This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate...
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5684309 |
Stacked quantum well aluminum indium gallium nitride light emitting diodes
Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium...
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5679963 |
Semiconductor tunnel junction with enhancement layer
The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only...
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5667905 |
Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof
An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to...
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5665984 |
Light-emitting diode
A light-emitting diode comprises a first layer of Si-doped N-type Ga 1 -x Al x As, a second layer of Si-doped P-type Ga 1 -y Al y As and a third layer of P-type Ga 1 -z Al z As, in that order,...
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5663581 |
Implanted led array and method of fabrication
A method of fabricating an LED array including epitaxially and sequentially growing a conductive layer on a substrate, a first carrier confinement layer, an active layer, a second carrier...
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5661742 |
Light emitting diode structure
A light emitting diode comprises a multiple quantum well structure. The light emitting diode has a first conductivity type GaAs substrate, an AlGaInP lower cladding layer of the first conductivity...
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5656829 |
Semiconductor light emitting diode
A semiconductor light emitting diode includes a compound semiconductor substrate and a double-hetero structure of (Al x Ga 1 -x) y In 1 -y P (0≤x≤1, 0<y<1) as an active layer, and an...
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5635733 |
Semiconductor light emitting element with a current diffusing layer having a changing carrier concentration therein
In the light emitting element comprising an n-type semiconductor substrate, a lower electrode formed on the lower surface of the substrate, and a light emitting part having a pn junction, which is...
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5633514 |
Semiconductor light emitting device with lattice-matching and lattice-mismatching
The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4)...
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5631475 |
Semiconductor light emitting element
A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and...
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5625202 |
Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
Semiconductor light emitting and sensing devices are comprised of a lattice matching wurtzite structure oxide substrate and a III-V nitride compound semiconductor single crystal film epitaxially...
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5616937 |
Compound semiconductor luminescent device
A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at...
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5614734 |
High efficency LED structure
An LED structure including a distributed Bragg reflector having multiple periods, each period including at least a first layer made of a first indirect band gap material and a second layer made of...
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5610412 |
Semiconductor light emitting device with depletion layer
A semiconductor device having superior light output efficiency is disclosed. A p-Si diffusion layer is formed on a Si substrate and an n-Si diffusion layer is formed in the p-Si diffusion layer. An...
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5608234 |
Semi-insulating edge emitting light emitting diode
Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor...
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5606176 |
Strained quantum well structure having variable polarization dependence and optical device including the strained quantum well structure
A strained quantum well structure comprises a substrate, and a strained quantum well. The strained quantum well has at least one well layer and a plurality of barrier layers. The well layer is...
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