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6040590 |
Semiconductor device with electrostatic control
A semiconductor light-emitting device having one or more depletion regions that are controlled by one or more control electrodes to vary the spatial distribution of the carriers in an active layer....
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6037603 |
Opto-electronic device with transparent high lateral conductivity current spreading layer
An opto-electronic device, such as a light-emitting diode, comprises a transparent high lateral conductivity current spreading layer 31 overlying a conventional p-n junction active region 10. The...
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6034380 |
Electroluminescent diode with mode expander
A semiconductor electro luminescent diode having a body of a semiconductor material with the body having a pair of spaced opposed end surfaces, side surfaces and top and bottom surfaces. The body...
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6031244 |
Luminescent semiconductor device with antidiffusion layer on active layer surface
A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of...
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6031252 |
Epitaxial wafer and method of preparing the same
An epitaxial wafer enabling epitaxial growth at a high temperature includes a compound semiconductor substrate containing As or P, and a covering layer including GaN; or InN; or AlN; or a nitride...
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6020601 |
Semiconductor light-emitting device
A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second...
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6015719 |
Transparent substrate light emitting diodes with directed light output
Methods for the fabrication of TS LED chips with improved light extraction and optics, particularly increased top surface emission, and the TS LEDs so fabricated are described. Non-absorbing DBRs...
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6004681 |
Light-emitting devices containing network electrode polymers in electron blocking layer
In general terms, the present invention includes a light emitting polymeric material, the polymeric material comprising: (a) an electron transporting polymer; the electron transporting polymer in...
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5998809 |
Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter
A room temperature emitter (10) operating in the 3-5 μm wavelength range is provided. The emitter (10) includes a substrate (12) formed of a material selected from the group comprising cadmium...
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5999552 |
Radiation emitter component
A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped...
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5998805 |
Active matrix OED array with improved OED cathode
An active matrix OED array with an improved device cathode includes a plurality of control transistors formed on a semiconductor substrate with insulating material positioned over the control...
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5998810 |
Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer
A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a...
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5994723 |
Semiconductor element and its method of manufacturing
An improved semiconductor construction and method of fabrication having a luminous element for emitting light is provided composed of a layer having a pn junction formed with a first semiconductor...
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5995529 |
Infrared light sources with semimetal electron injection
An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an...
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5990495 |
Semiconductor light-emitting element and method for manufacturing the same
A semiconductor light-emitting element comprising a monocrystal substrate; a buffer layer formed directly on the monocrystal substrate and comprising a monocrystal Al x Ga 1 -x N layer...
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5990497 |
Semiconductor light emitting element, semiconductor light emitting device using same element
A semiconductor light emitting element exhibiting a characteristic of deflected luminous intensity distribution, a semiconductor light emitting device capable of making, even when the element is...
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5990500 |
Nitride compound semiconductor light emitting element and its manufacturing method
A nitride compound semiconductor light emitting element is made by stacking a metal layer made of one of elements: palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf),...
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5990496 |
Light emitting device with cap layer
A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first...
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5986288 |
Epitaxial wafer for a light-emitting diode and a light-emitting diode
An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed...
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5981976 |
Epitaxial wafer for AlGaInP light-emitting diode
An epitaxial wafer for an AlGaInP light-emitting device includes a p-type GaAs substrate, a reflection layer in the form of a laminated body of multiple semiconductor layers provided over the...
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5981975 |
On-chip alignment fiducials for surface emitting devices
An optoelectronic apparatus has, a die having a mesa (103) with a surface emitting optical device and a metallized p-type contact (209), a planar pad (201) adjacent the mesa for Z-height...
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5981980 |
Semiconductor laminating structure
To provide a semiconductor laminating structure in which an epitaxial growth of a GaN system material is achieved on a substrate with an excellent matching property with the substrate. The...
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5981977 |
Nitride compound semiconductor light emitting element and its manufacturing method
A nitride compound semiconductor light emitting element comprises a substrate, a nitride compound semiconductor n-type layer, a mask layer having a predetermined opening, a nitride compound...
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5973336 |
LED with light emission on all sides
An LED having improved light emission characteristics by allowing radiation generated to be guided towards the side faces of the LED by means of a relatively thick waveguide comprised of a...
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5970080 |
Gallium nitride compound semiconductor light emitting element and method for fabricating the same
The gallium nitride compound semiconductor light emitting element includes: a substrate; a first semiconductor multilayer structure including, at least, an active layer, a first cladding layer of a...
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5962873 |
Semiconductor laser device having a COD-preventing structure
In a semiconductor laser device comprising a semiconductor laser main body having an active layer formed between a pair of cladding layers, and a non-absorbing layer of InGaP formed on the facets...
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5963573 |
Light absorbing layer for II-VI semiconductor light emitting devices
A II-VI semiconductor light emitting device includes a II-VI semiconductor light emitting region and a II-VI semiconductor waveguide layer. A light absorbing layer is provided near the II-VI...
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5959315 |
Semiconductor to optical link
One surface of a semiconductor component attached to one surface of a header with an opposite surface of the component having an optical input/output positioned adjacent one end of an optical...
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5955749 |
Light emitting device utilizing a periodic dielectric structure
A light emitting device comprising a substrate and a dielectric structure having at least a two-dimensionally periodic variation of dielectric constant which exhibits a spectrum of electromagnetic...
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5952673 |
Optical semiconductor device including a multiple quantum well structure of an AlGaInAs/InP system
The optical semiconductor device comprises a multiple quantum well structure of an AlGaInAs system material formed on an InP semiconductor substrate. The multiple quantum well structure comprises a...
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5949093 |
Semiconductor light emitting device with current blocking region
A semiconductor light emitting device comprises: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a contact layer formed on the II-VI compound semiconductor...
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5945690 |
Compound semiconductor device
The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an...
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5939734 |
Semiconductor light emitting device and method of fabricating the same
A method of fabricating a semiconductor light emitting device includes fabricating, semiconductor light emitting devices on a large scale by forming desirable end surfaces of resonators using an...
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5939733 |
Compound semiconductor device having a group III-V compound semiconductor layer containing therein T1 and As
A compound semiconductor device includes a substrate and a group III-V compound semiconductor layer provided on the substrate, wherein the group III-V compound semiconductor layer contains As as a...
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5932896 |
Nitride system semiconductor device with oxygen
The present invention provides a nitride system semiconductor device which decreases cost and improves productivity without heat treatment after the growth and which increases in lifetime and...
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5923054 |
Light emitting diode with tilted plane orientation
In a light-emitting diode, which comprises epitaxial wafer where a gallium phosphide or a gallium phosphide arsenide mixed crystal epitaxial layer is grown on a III-V family compound single crystal...
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5920086 |
Light emitting device
A device for generating radiant energy comprising a first electrode, a second electrode spaced apart from said first electrode, a material disposed between and in electrical communication with...
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5917243 |
Semiconductor device having ohmic electrode and method of manufacturing the same
A semiconductor device having an ohmic electrode having a satisfactory ohmic contact to an n-type GaAs can be obtained by heat treatment at low temperature. A method of manufacturing the...
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5917201 |
Light emitting diode with asymmetrical energy band structure
A high bandgap material is used as a cladding layer to confine the carrier overflow in a aluminum-gallium-indium-phosphide light emitting diode. The quantum efficiency is improved. The use of this...
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5912475 |
Optical semiconductor device with InP
An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a...
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5909459 |
Surface-emitting semiconductor light emitting device
A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type...
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5909036 |
Group III-V nitride semiconductor device
A semiconductor device comprising single crystal films consisting of at least one III-V nitride selected from the group consisting of gallium nitride, aluminum nitride, boron nitride, indium...
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5907161 |
Semiconductor device including doped spontaneously formed superlattice layer
A semiconductor device includes a III-V compound semiconductor layer including two or more Group III elements and containing dopant impurities, including a spontaneous superlattice, and having a...
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5900650 |
Semiconductor device and method of manufacturing the same
There is disclosed a semiconductor device formed on a sapphire substrate, for example, a blue LED of a double-hetero structure having a laminated structure which comprises a first cladding layer...
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5898190 |
P-type electrode structure and a semiconductor light emitting element using the same structure
A p-type electrode structure having low resistance and a high yield light emitting element operable at low operating voltage is disclosed. On a substrate is formed an n-type clad layer, an active...
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5886370 |
Edge-emitting semiconductor lasers
The present invention relates to a laser with accurately defined and controlled oxide regions which provide electrical and optical confinement to the laser. Specifically, the oxide regions are...
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5880485 |
Semiconductor device including Gallium nitride layer
A high-quality gallium nitride layer is grown on a surface of a substrate which is exposed through a dielectric mask on the substrate. The high-quality gallium nitride layer has a composition...
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5874747 |
High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
A green-blue to ultraviolet light emitting semiconductor laser having a top contact, a Bragg reflector, cladding layer, active layer, cladding layer, buffer, substrate, bottom contact and a...
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5851905 |
Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows
Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium...
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5850410 |
Semiconductor laser and method for fabricating the same
The present invention relates to a semiconductor laser having light emitting wavelengths from blue to UV, more specifically a semiconductor laser which can form a laser resonator by perpendicular...
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