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8183554 |
Symmetrical programmable memresistor crossbar structure
A crossbar structure includes a first layer or layers including first p-type regions and first n-type regions, a second layer or layers including second p-type regions and second n-type regions,...
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8183164 |
Method for preferential growth of semiconducting vertically aligned single walled carbon nanotubes
A method and system for the preferential growth of semiconducting vertically-aligned single-walled carbon nanotubes (VA-SWNTs) is provided. The method combines the use of plasma-enhanced chemical...
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8178862 |
Junctionless metal-oxide-semiconductor transistor
A junctionless metal-oxide-semiconductor transistor is described. In one aspect, a transistor device comprises a semiconductor material. The semiconductor material comprises first, second, and...
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8178431 |
Process for producing a PN homojunction in a nanostructure
The invention relates to a process for producing a p-n junction in a nanostructure, in which the nanostructure has one or more nanoconstituents made of a semiconductor material with a single type...
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8173982 |
Non-degenerate polarization-entangled photon pair generation device and non-degenerate polarization-entangled photon pair generation method
A non-degenerate polarization-entangled photon pair generation device (1) that efficiently and easily generates non-degenerate polarization-entangled photon pairs includes: a quantum-entangled...
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8168964 |
Semiconductor device using graphene and method of manufacturing the same
A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used...
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8164082 |
Spin-bus for information transfer in quantum computing
A spin bus quantum computing architecture includes a spin bus formed of multiple strongly coupled and always on qubits that define a string of spin qubits. A plurality of information bearing qubits...
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8164083 |
Quantum dot optoelectronic devices with enhanced performance
An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot...
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8148715 |
Solid state charge qubit device
This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In further aspects the device is scaled up....
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8138492 |
Formation of carbon and semiconductor nanomaterials using molecular assemblies
The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the...
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8138491 |
Self-aligned nanotube field effect transistor
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the...
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8120003 |
Nanowire magnetic random access memory
An integrated array of non volatile magnetic memory devices, each having a first magnetic layer (10) with a fixed magnetization direction; a free magnetic layer (20) with a changeable magnetization...
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8115191 |
Self-constrained anisotropic germanium nanostructure from electroplating
A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the...
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8115189 |
Silica nanowire comprising silicon nanodots and method of preparing the same
Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption...
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8115190 |
Nanowires
An apparatus and a method of manufacturing the apparatus. The apparatus includes a main nanowire and branch nanowires emanating from the main nanowire. The main nanowire may have a first portion...
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8110898 |
Polymer-embedded semiconductor rod arrays
A structure consisting of well-ordered semiconductor structures embedded in a binder material which maintains the ordering and orientation of the semiconductor structures. Methods for forming such...
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8110410 |
Nanofludic field effect transistor based on surface charge modulated nanochannel
A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating...
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8106510 |
Nano-tube thermal interface structure
A semiconductor structure having: an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally conductive heat sink; a...
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8105928 |
Graphene based switching device having a tunable bandgap
A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an...
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8102693 |
Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material...
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8097902 |
Programmable metallization memory cells via selective channel forming
A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode....
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8093474 |
Metallic nanospheres embedded in nanowires initiated on nanostructures and methods for synthesis thereof
A nanostructure includes a nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there...
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8076740 |
Photo detector with a quantum dot layer
A photo detector is provided with a plurality of quantum dot layers and first conductive type contact layers provided at both sides of the plurality of quantum dot layers so as to sandwich them; a...
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8076666 |
Use of sack geometry to implement a single qubit phase gate
An implementation of a single qubit phase gate for use in a quantum information processing scheme based on the υ=5/2 fractional quantum Hall (FQH) state is disclosed. Using sack geometry, a qubit ...
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8076701 |
Large scale patterned growth of aligned one-dimensional nanostructures
A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A...
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8063396 |
Polariton mode optical switch
Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures...
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8058673 |
Biosensor using nanodot and method of manufacturing the same
A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically...
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8058155 |
Integrated nanowires/microelectrode array for biosensing
The present invention provides a method for the controlled synthesis of nanostructures on the edges of electrodes and an apparatus capable of optical and electrochemical sensing. In accordance with...
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8058638 |
Quantum computational systems
Apparatus and methods for performing quantum computations are disclosed. Such quantum computational systems may include quantum computers, quantum cryptography systems, quantum information...
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8053754 |
Quantum computational systems
A computer-implemented method for encryption and decryption using a quantum computational model is disclosed. Such a method includes providing a model of a lattice having a system of non-abelian...
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8054671 |
Methods of making quantum dot films
Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material...
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8048785 |
Method of fabricating nanosized filamentary carbon devices over a relatively large-area
Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from the first surface, without the need...
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8049203 |
Nanoelectronic structure and method of producing such
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than...
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8049231 |
Quantum photonic imagers and methods of fabrication thereof
Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can...
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8044382 |
Light-emitting device and method for manufacturing the same
A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film...
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8044391 |
Thin film transistor and method of fabricating the same
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central...
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8044379 |
Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an...
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8043942 |
Method for producing core-shell nanowires, nanowires produced by the method and nanowire device comprising the nanowires
Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the...
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8022394 |
Molecular quantum interference apparatus and applications of same
A molecular quantum interference device for use in molecular electronics. In one embodiment, the device includes a molecular quantum interference unit having a first terminal group and a second...
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8022393 |
Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process
The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a...
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8023306 |
Electronic and optoelectronic devices with quantum dot films
Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material...
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8013324 |
Structurally stabilized semiconductor nanowire
In one embodiment, a semiconductor nanowire having a monotonically increasing width with distance from a middle portion toward adjoining semiconductor pads is provided. A semiconductor link portion...
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8009937 |
Charge-based memory cell for optical resonator tuning
An optical resonator configured to be tuned using a charge-based memory cell includes an optical cavity configured to transmit light and receive injected charge carriers; a charge-based memory cell...
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8003973 |
Connect and capacitor substrates in a multilayered substrate structure coupled by surface coulomb forces
A multi layered substrate structure can be formed where the substrates are coupled together using surface Coulomb forces. Connect substrates electrically connects signals and DC voltages between...
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7999248 |
Ultrahigh density patterning of conducting media
A nanoscale device and a method for creating and erasing of nanoscale conducting regions at the interface between two insulating oxides SrTiO3 and LaAlO3 is provided. The method uses the tip of a...
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7989798 |
Fabricating arrays of metallic nanostructures
A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic...
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7989233 |
Semiconductor nanowire with built-in stress
A semiconductor nanowire having two semiconductor pads on both ends is suspended over a substrate. Stress-generating liner portions are formed over the two semiconductor pads, while a middle...
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7982204 |
Using unstable nitrides to form semiconductor structures
Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier....
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7973305 |
Thin film transistor
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting...
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7968863 |
Optical device having a quantum-dot structure
Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is...
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