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7633081 |
Tunable radiation emitting semiconductor device
A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap...
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7622744 |
Light emitting material, light emitting element, light emitting device and electronic device
The present invention provides a light emitting material having high electric conductivity, and further a light emitting element which can be driven at low voltage. Light emitting devices and...
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7582910 |
High efficiency light emitting diode (LED) with optimized photonic crystal extractor
A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the...
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7550782 |
Semiconductor device having an undercoat layer and method of manufacturing the same
In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride...
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7541622 |
Super luminescent diode and manufacturing method thereof
To provide a superluminescent diode capable of emitting high output super luminescent light having a central wavelength within a range of 0.95 μm to 1.2 μm and an undistorted beam cross section,...
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7541205 |
Fabrication method of transparent electrode on visible light-emitting diode
A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a...
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7521330 |
Methods for forming capacitor structures
A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the...
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7511314 |
Light emitting device and method of fabricating the same
Disclosed is a light-emitting device ( 100 ) has a light-emitting layer portion ( 24 ) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (...
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7508003 |
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
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7473150 |
Zinc oxide N-I-N electroluminescence device
A method is provided for forming a ZnO Si N—I—N EL device. The method comprises: forming an n-doped Si layer; forming a Si oxide (SiO2) layer overlying the n-doped Si layer; forming an n-type...
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7417258 |
Semiconductor light-emitting device, and a method of manufacture of a semiconductor device
A method of manufacturing a nitride semiconductor device comprises the steps of: growing an In x Ga 1-x N (0≦x≦1) layer, and growing an aluminium-containing nitride semiconductor layer over the...
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7411220 |
Semiconductor light emitting device and manufacturing method thereof
A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a...
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7355213 |
Electrode material and semiconductor element
As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not...
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7345297 |
Nitride semiconductor device
A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer,...
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7329942 |
Array-type modularized light-emitting diode structure and a method for packaging the structure
An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper...
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7307284 |
Luminescent diode
A light-emitting diode based on GaAlAs has a window layer ( 5 ) of reduced thickness and is doped continuously with Si or Sn. The net concentration of the doping is less than 1 ×10 18 cm −3 ....
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7294848 |
Light-emitting Group IV semiconductor devices
In one aspect, a semiconductor device includes a p-region and an n-region. The p-region includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first...
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7274041 |
Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing...
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7271417 |
Light-emitting element with porous light-emitting layers
The invention relates to a light-emitting element with porous light-emitting layers. The light-emitting element comprises: a substrate, a first conductive cladding layer, a second conductive...
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7271418 |
Semiconductor apparatus for white light generation and amplification
The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up...
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7259406 |
Semiconductor optical element
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant...
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7251265 |
Micro-cavity laser having increased sensitivity
An optically pumped micro-cavity laser has an optical gain cavity and an optical resonant cavity. The optical gain cavity has a gain medium disposed that generates an optical output in response to...
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7247885 |
Carrier confinement in light-emitting group IV semiconductor devices
In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is...
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7244964 |
Light emitting device
An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the...
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7223998 |
White, single or multi-color light emitting diodes by recycling guided modes
A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected...
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7180101 |
Semiconductor device, and method for manufacturing the same
The present invention provides a semiconductor device including an element that is considered to have less environmental problem (for example iron), and a method for manufacturing the same. More...
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7176503 |
Light emitting diode package and light source comprising the same
An LED package comprises a substrate, one or three terminals formed on a first side of the substrate, three terminals formed on a second side opposite to the first side, and two or three LEDs...
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7166870 |
Light emitting devices with improved extraction efficiency
Light-emitting devices, and related components, systems and methods are disclosed.
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7157741 |
Silicon optoelectronic device and optical signal input and/or output apparatus using the same
A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface...
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7154123 |
Nitride-based semiconductor light-emitting device
A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first...
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7154127 |
Semiconductor light emitting device
A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking...
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7151281 |
Light-emitting diode structure with electrostatic discharge protection
A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second...
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7135711 |
Electroluminescent body
An electroluminescent component ( 1 ), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component ( 1 ) has a...
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7122842 |
Solid state white light emitter and display using same
A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of...
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7119372 |
Flip-chip light emitting diode
A flip chip light emitting diode die ( 10, 10′, 10 ″) includes a light-transmissive substrate ( 12, 12′, 12 ″) and semiconductor layers ( 14, 14′, 14 ″) that are selectively patterned...
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7115908 |
III-nitride light emitting device with reduced polarization fields
A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the...
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7115910 |
Multicolor photodiode array and method of manufacturing thereof
Novel structures of the photodetector having broad spectral ranges detection capability (from UV to 1700 nm (and also 2500 nm)) are provided. The photodetector can offer high quantum efficiency...
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7112829 |
Light emitting device and method for making same
A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second...
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7105857 |
Nitride semiconductor device comprising bonded substrate and fabrication method of the same
A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride...
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7102176 |
Organic electroluminescent display panel and manufacturing method therefor
An organic electroluminescent display panel includes: one or more organic electroluminescent elements each having first and second display electrodes and one or more organic functional layers of...
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7098482 |
Monolithic white light emitting device
A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of...
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7095041 |
High-efficiency light emitting diode
A high-efficiency light emitting diode is provided. The light emitting diode includes a substrate; a first compound semiconductor layer formed on the top surface of the substrate; a first electrode...
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7095051 |
Nitride semiconductor element
In a nitride semiconductor device having an active layer 12 between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is...
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7095050 |
Voltage-matched, monolithic, multi-band-gap devices
Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a...
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7095042 |
Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same
A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device includes a...
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7075120 |
Light-emitting diode and its manufacturing method
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light...
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7053413 |
Homoepitaxial gallium-nitride-based light emitting device and method for producing
A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate...
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7048872 |
Codoped direct-gap semiconductor scintillators
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped...
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7042013 |
Radiation-emitting semiconductor component
A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer ( 18 ), a p-doped cladding layer ( 20 ), and an active layer ( 14 ) based on InGaAlP...
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7034342 |
Semiconductor light emitting device
A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made...
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