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8003969 |
Switching device, drive and manufacturing method for the same, integrated circuit device and memory device
Provided is a switching device including ion conducting part 4 having an ion conductor, first electrode 1 formed at a first gap away from ion conducting part 4, second electrode 2 formed to be in...
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7804085 |
Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit
The switching element of the present invention is of a configuration that includes: a first electrode (14) and a second electrode (15) provided separated by a prescribed distance; a solid...
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7763880 |
Multi-terminal electrically actuated switch
A multi-terminal electrically actuated switch comprises a source electrode, a drain electrode, and an active region physically connected to both electrodes. The active region comprises at least one...
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7687797 |
Three-terminal non-volatile memory element with hybrid gate dielectric
A MOS transistor is used as a programmable three-terminal non-volatile memory element. The gate dielectric layer of the MOS transistor has a first portion with a relatively higher dielectric...
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7579616 |
Four-terminal programmable via-containing structure and method of fabricating same
A semiconductor structure that includes two programmable vias each of which contains a phase change material that is integrated with a heating material. In particular, the present invention...
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7551473 |
Programmable resistive memory with diode structure
Programmable resistive memory cells are accessed by semiconductor diode structures. Manufacturing methods and integrated circuits for programmable resistive elements with such diode structures are...
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7423292 |
Semiconductor device, EL display device, liquid crystal display device, and calculating device
There is provided a semiconductor device able to increase the mobility of carriers and reduce the current in the OFF state. The semiconductor device includes a gate electrode, an insulating layer...
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7326953 |
Layer sequence for Gunn diode
The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped nd GaAs layer (3), a graded AlGaAs...
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7253522 |
Integrated capacitor for RF applications with Ta adhesion layer
A precision RF passive component including: a silicon substrate; a first dielectric layer deposited above the silicon substrate; a first metal layer formed above the first dielectric layer; a...
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7202137 |
Process for producing an integrated electronic circuit comprising superposed components and integrated electronic circuit thus obtained
A process for producing an integrated electronic circuit. The process begins with the production of a first electronic component and a second electronic component that are superposed on top of a...
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7148543 |
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions
A semiconductor chip includes a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate...
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7098472 |
Negative differential resistance (NDR) elements and memory device using the same
A two-terminal NDR device can be formed by coupling the gate and drain of an NDR-capable FET, such that the coupled gate and drain form a first terminal and the source of the NDR-capable FET forms...
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7087921 |
Active electronic device and electronic apparatus
To provide an active electronic device which is formed from a carbon nanotube and which excels in high frequency operation and an electronic apparatus using the active electronic device. Provided...
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6768130 |
Integration of semiconductor on implanted insulator
A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic...
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6460170 |
Connection block for interfacing a plurality of printed circuit boards
A system and method is described for providing a robust mechanical and electrical connection between two or more circuit boards which may be employed for diagnostic purposes and/or for permanent...
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6380729 |
Testing integrated circuit dice
A method for testing a plurality of integrated circuits. In one embodiment, a plurality of integrated circuits are arranged on a wafer. The integrated circuits are separated on the wafer across the...
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6184581 |
Solder bump input/output pad for a surface mount circuit device
A surface mount circuit device (110), such as a flip chip, of the type which is attached to a conductor pattern (126) with solder bump connections (120). The solder bump connections (120) are...
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6043518 |
Multiple-function GaAs transistors with very strong negative differential resistance phenomena
Disclosed in this invention is a new four-terminal type and multiple delta-doped transistors with multiple functions grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). All the...
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5892558 |
Wire electrode structure based on 2 or 3 terminal device employed in a liquid crystal display
An active matrix LCD employs a two-terminal or three-terminal switch structure employing an electrically conductive wire. The wire has an insulating layer thereon forming a wire structure. The wire...
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5436197 |
Method of manufacturing a bonding pad structure
A test card (10) or a semiconductor die (150) having bonding pads (41-43, 180-182) for testing semiconductor devices, and a method for making the bonding pads (41-43, 180-182) are shown. The test...
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4894689 |
Transferred electron device
A transferred electron device is described in which the charge of the drifting packets is imaged perpendicular to the charge-packet direction so that essentially all of the packet-averaged,...
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4831422 |
Field effect transistor
A field effect transistor having a short channel length of 1 μm or less is disclosed. The transistor includes a plurality of impurity regions provided in the channel region between the source and ...
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4481485 |
Optically triggered transferred-electron device microwave burst and single pulse generators
Transferred-electron device (TED) microwave burst and single pulse generators which are triggered by picosecond optical pulses. The burst generator includes a TED having a cathode, an anode, and a...
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4396931 |
Tunnel emitter upper valley transistor
The invention is a three-terminal transistor structure having five layers of materials that in combination provide conduction by high mobility carrier transport across the base in an energy valley...
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4331967 |
Field effects semiconductor devices
In a field effect semiconductor device comprising a semi-insulator layer composed of a semiconductor material, an N conductivity type active layer made of the same semiconductor material and acting...
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4320313 |
Gunn-effect device modulatable by coded pulses, and a parallel-series digital converter using said device
A Gunn-effect device originated from a Gunn-triode wherein electrodes are added between gate and anode for receiving high and low potentials representing states 1 and 0 of a binary code. In a...
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4242597 |
Gunn effect shift register
A device derived from a bulk semiconductor component called "Gunn-effect triode"; utilizing the propagation of travelling domains between gate and anode of said triode. Forming a register element...
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4107718 |
Bulk semiconductor logic device
A semiconductor device including a cathode and an anode for applying a bias electric field to a semiconductor exhibiting negative conductivity under high electric field, a region in which the...
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4023196 |
Negative resistance element composed of a semiconductor element
An improved negative resistance element is disclosed, the element being composed of a semiconductor element and having an effective negative electroconductivity in a high electric field, the...
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3975690 |
Planar transmission line comprising a material having negative differential conductivity
A planar transmission line comprising a Gunn effect semiconductor having an epitaxial portion as the propagating medium amplifies and switches r.f. signals and is not transit time limited in the...
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3967305 |
Multichannel junction field-effect transistor and process
A single gate field-effect transistor including a semi-insulating substrate for providing a one-sided device geometry, an isolating mesa formed from a layer of semi-conductor material provided on a...
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3963977 |
Frequency multiplier with nonlinear semiconductor element
A semiconductive body in the form of a rectangular parallelepiped is formed of a semiconductive material, such as gallium arsenide or indium phosphide or Group IV elements, having an electric...
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3918009 |
Gunn effect phase modulator
A Gunn effect triode is modified to provide a phase modulator. It may, for example, generate a phase modulated output and may be used in a microwave modulator. It consists basically of a main...
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3906385 |
Gunn effect power divider
A Gunn effect triode is utilized to provide a power divider. The power divider may, for example, be provided with a main branch from which depend two or more legs and from each of which a replica...
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3848141 |
SEMICONDUCTOR DELAY LINES USING THREE TERMINAL TRANSFERRED ELECTRON DEVICES
Presented is a semiconductor delay line which makes use of the transferred electron effect in order to provide useful delays in information processing applications at multigigabit rates.
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3836989 |
BULK SEMICONDUCTOR DEVICE
Disclosed is a semiconductor device comprising at least two semiconductor elements integrally connected by an insulator, each semiconductor showing negative differential conductivity under the...
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3766372 |
METHOD OF CONTROLLING HIGH ELECTRIC FIELD DOMAIN IN BULK SEMICONDUCTOR
The invention disclosed is for a method and apparatus for controlling high electric field domain in a bulk semiconductor as well as an information processing method thereby. By means of a...
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3753136 |
SOLID STATE TRAVELING WAVE AMPLIFYING DEVICE
This invention relates to a solid state travelling wave amplifying device, utilizing such a semiconductor as n-type GaAs or n-type InP in which average velocity of electrons decreases with...
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3691481 |
NEGATIVE RESISTANCE ELEMENT
Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control...
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3689779 |
CONTROLLED GUNN-EFFECT DEVICE
A Gunn-effect device in which the active layer of the semiconductor body is provided with a suitable recess, hole or opening which extends through the active layer in a direction perpendicular to...
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3667010 |
GUNN-TYPE SOLID-STATE DEVICES
This invention is a multi-terminal Gunn-type semiconductor microwave generator capable of producing signals of stable frequency over a frequency range. In one form, a group III-V semiconductor chip...
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3659158 |
BULK-EFFECT SEMICONDUCTOR DEVICES AND CIRCUITS THEREFOR
A wafer of bulk-effect material includes a first region contained between a first cathode and first anode and a second region contained between a second cathode and a second anode. The first and...
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3624556 |
BULK-EFFECT SEMICONDUCTOR DEVICES
Traveling electric field domains are suppressed in a bulk-effect negative resistance device by including on the semiconductor wafer a plurality of dielectric stripes extending between the cathode...
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3602734 |
SEMICONDUCTOR DEVICE EMPLOYING GUNN EFFECT ELEMENTS
A inhibited NOT circuit is described utilizing the Gunn effect. The NOT circuit is formed by connecting several semiconductor regions of the bulk negative resistance effect type in series...
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3597625 |
NEURISTOR ELEMENT EMPLOYING BULK EFFECT SEMICONDUCTOR DEVICES
A neuristor element is described which is formed of a pair of Gunn effect elements using bulk negative resistance effect materials capable of forming high electric field layers in the elements upon...
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3594618 |
ELECTRONIC LOGIC ELEMENT
A logic element is described utilizing a travelling field domain phenomenon, such as the Gunn effect, which occurs in a body of material when a field is produced in the body above a first threshold...
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3593046 |
COMMUNICATION SYSTEM INCLUDING A PLURALITY OF SEMICONDUCTIVE CIRCUIT ARRANGEMENTS USING GUNN EFFECT DEVICES
A communication system designed with semiconductive circuit arrangements using "Gunn Effect" devices exhibiting high field instability effects when an applied electrical field exceeds certain...
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3587000 |
SEMICONDUCTIVE CIRCUIT
This is a semiconductor device consisting of a material which exhibits high field instability effects when a potential which exceeds a critical value is applied across the device. Electronic means...
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3551831 |
TRAVELING-WAVE SOLID-STATE AMPLIFIER UTILIZING A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY
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3544914 |
SEMICONDUCTOR HIGH FREQUENCY AMPLIFIER DEVICE
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