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9048105 Semiconductor integrated circuit  
To reduce power consumption of a memory device. To reduce the area of a memory device. To reduce the number of transistors included in a memory device. The memory device includes a comparator...
9041013 Light emitting device and lighing system having the same  
Provided is a light emitting device. The light emitting device includes a plurality of metal layers spaced from each other, a first insulation film having an opened area in which a portion of the...
9041005 Solid state lighting devices with cellular arrays and associated methods of manufacturing  
Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material...
9041012 Galium-nitride light emitting device having a microarray-type structure  
A microarray-type nitride light emitting device includes a light emitting semiconductor layer; and a multilayered transparent contact layer to divide a plane of the light emitting semiconductor...
9041045 Transparent LED wafer module and method for manufacturing same  
A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer,...
9041014 Method for producing an optoelectronic component and component produced in such manner  
A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed...
9035325 Light emitting device package and lighting system  
A light emitting device (LED) package includes a submount and a light emitting chip. The submount has a chip region and a supporting region over which the chip is mounted, and an encapsulating...
9035324 Light emitting device  
A light emitting device may include a semiconductor light emitting diode which may include a first nitride semiconductor layer doped as an n-type, a second nitride semiconductor layer doped as a...
9035336 Semiconductor device  
A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer,...
9035334 Method and apparatus for fabricating phosphor-coated LED dies  
The present disclosure involves a method of packaging a light-emitting diode (LED). According to the method, a group of metal pads and a group of LEDs are provided. The group of LEDs is attached...
9035335 Light emitting module  
A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central...
9029830 Multi-quantum well LED structure with varied barrier layer composition  
A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based...
9029848 Organic electroluminescent panel and method for producing the same  
A method for producing an organic electroluminescent panel having an organic layer formed by a coating step and a large aperture ratio includes: a first step of arraying and distributing a...
9029887 Solid state lighting devices having improved color uniformity and associated methods  
Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter...
9029865 Organic light emitting diode display and method for manufacturing the same  
An organic light emitting diode display includes a substrate, a first electrode and an assistance electrode disposed on the substrate and separated from each other, an organic emission layer...
9024331 Substrate, template substrate, semiconductor light emitting element, semiconductor light emitting element producing method, illumination device using semiconductor light emitting element and electronic device  
Disclosed is a semiconductor light emitting element (LC) provided with a substrate (110) having one surface on which plural hexagonal-pyramid-shaped protrusions (110b) are provided, a base layer...
9024451 Integrated lighting apparatus and method of manufacturing the same  
An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and...
9023681 Method of fabricating heterojunction battery  
The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon...
9024339 Light emitting diode  
The present invention provides a light emitting diode which comprises a substrate, a light emitting layer including an N-type semiconductor layer and a P-type semiconductor layer formed on the...
9024332 Semiconductor light emitting element  
A semiconductor light emitting element has a cross-sectional structure comprising a support substrate, a semiconductor lamination located over the support substrate, and a joint layer located...
9024985 Light-emitting component, print head, image forming apparatus and method of manufacturing light-emitting component  
A light-emitting component includes: plural light-emitting thyristors, each including a semiconductor layer stack laminating first to fourth semiconductor layers in order, and emitting light at a...
9024343 Light emitting device  
A light emitting device includes a substrate, a light emitting element, an additional light emitting element, a light reflecting resin member, an electrically conductive wire, an additional...
9018535 Touch panel and method for manufacturing a touch sensor layer of the touch panel  
A touch panel includes a touch sensor layer including a first transparent electrode and a second transparent electrode, wherein an arrangement direction of the first transparent electrode can be...
9018619 Quantum wells for light conversion  
A solid state light emitting device according to the present invention comprises an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of...
9018669 Light emitting diode having electrode pads  
A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an...
9018648 LED package structure  
The present invention relates to a package structure for light-emitting diodes (LEDs). The package structure includes a substrate, a heat-dissipating structure disposed on the substrate, and a...
9018642 Mid-infrared tunable metamaterials  
A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor...
9018641 Method for producing a radiation-emitting component and radiation-emitting component  
A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is...
9012950 Light emitting device package  
A light emitting device package includes: a package main body having a chip mounting region surrounded by side walls; lead frames spaced apart from one another, at least one portion thereof being...
9012953 LED with improved injection efficiency  
A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor...
9012919 III-V semiconductor structures and methods for forming the same  
Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to...
9012883 Recessed contact to semiconductor nanowires  
A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an...
9012940 Optoelectronic semiconductor bodies having a reflective layer system  
An optoelectronic semiconductor body (1) having an active semiconductor layer sequence (10) and a reflective layer system (20) is described. The reflective layer system (20) comprises a first...
9012926 Radiation-emitting semiconductor component  
A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently...
9012936 Sapphire substrate having triangular projections with portions extending in direction of substrate crystal axis  
The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal...
9012888 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer  
According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided...
9012924 Spectrum detector including a photodector having a concavo-convex patten  
Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate;...
9006709 Semiconductor light emitting element and method for manufacturing the same  
According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of an n-type, a second semiconductor layer of a p-type, and a light emitting unit. The...
9006750 Optical semiconductor package, optical semiconductor module, and manufacturing method of these  
An optical semiconductor package has a base material that includes a principal surface, an optical semiconductor element that is located on the principal surface of the base material to project or...
9006869 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Light emitting device package
 
A light emitting device package is provided comprising a light emitting device including at least one light emitting diode and a body including a first lead frame on which the light emitting...
9006749 Quantum dot laser diode and method of manufacturing the same  
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer...
9006769 Organic electroluminescence element  
Provided is a highly-reliable organic electroluminescence element in which loss of light due to surface plasmons generated on a metal surface is suppressed, the efficiency of light extraction to...
9006754 Multichip light emitting diode (LED) and method of manufacture  
The present invention provides a multichip LED and method of manufacture in which white light is produced. Specifically, a plurality of electrically interconnected LED chips (e.g., interconnected...
9006865 Epitaxial growth substrate, semiconductor device, and epitaxial growth method  
In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an...
9000461 Optoelectronic element and manufacturing method thereof  
An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface...
9000471 LED module  
There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the...
9000467 Non-chip LED illumination device  
A non-chip LED illumination device includes a retaining layer having one or more chambers for engaging with light emitting diode elements each of which include an outer surface and two terminals...
9000449 Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device  
A semiconductor substrate that includes a semiconductor layer that exhibits high crystallinity includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic...
9001527 Electronic package structure  
The present invention discloses an electronic package structure. The body has a top surface with a cavity thereon, the first conductive element is disposed in the cavity, and the second conductive...
9000450 Grown photonic crystals in semiconductor light emitting devices  
A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The...