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7154149 |
EDS protection configuration and method for light emitting diodes
This invention relates to an ESD protection configuration and method for light emitting diodes (LED), including an LED an LED, having a p-n junction and connected to a circuit substrate, the...
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7154929 |
Micro-cavity light emitting device and method for making same
A device for emission of light is made including an emitting structure including an active part and a micro-cavity, delimited by mirrors and containing the active part, and a laser diode designed...
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7153000 |
Multi-lens light emitting diode
A multi-lens LED has multiple lenses and an intermediate layer interposed between the multiple lenses in order to radiate light emitted from an LED chip in a desired direction and/or at a desired...
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7153713 |
Method for manufacturing high efficiency light-emitting diodes
A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active...
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7154125 |
Nitride-based semiconductor light-emitting device and manufacturing method thereof
The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a...
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7151281 |
Light-emitting diode structure with electrostatic discharge protection
A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second...
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7151282 |
Light emitting diode
A green LED has a substrate, a GaN heavily n-doped bottom confining layer, an active region, an upper GaN confinement layer, and a semi-transparent ohmic contact layer. The active region has less...
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7151284 |
Structures for light emitting devices with integrated multilayer mirrors
A substrate for supporting epitaxial growth of light emitting semiconductor devices having a non-crystalline multilayer reflection controlling stack under a thin layer of single crystal silicon is...
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7151277 |
Selective etching of silicon carbide films
A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on...
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7148529 |
Semiconductor package
A semiconductor package includes (a) an interposer, (b) a wiring layer containing conductors formed adjacent to each other at intervals that cause no short circuit among the conductors, the wiring...
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7148513 |
Backlight units for liquid crystal displays
A novel backlight is provided for a liquid crystal display (LCD). The backlight of this invention includes an organic electroluminescent (EOL) device and a cholesteric liquid crystal (CLC)...
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7148514 |
Nitride semiconductor light emitting diode and fabrication method thereof
The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a...
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7148517 |
Light emitting diode and method of the same
A light emitting diode and a method of the same are provided. The light emitting diode includes a light-emitting structure, a silicon substrate and a bonding layer. The light-emitting structure...
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7148127 |
Device mounting substrate and method of repairing defective device
A method of repairing a defective one of devices mounted on substrate is provided. Devices are arrayed on a substrate and electrically connected to wiring lines connected to a drive circuit, to be...
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7145177 |
Light emitting device
There is provided a light emitting device including a TFT having a high driving capacity (on current) and high reliability in a driver circuit and a TFT in which an off current is reduced in a...
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7145182 |
Integrated emitter devices having beam divergence reducing encapsulation layer
In one embodiment, a method for fabricating an integrated emitter device occurs on a flat substrate such as printed circuit board (PCB). A cup of suitable material such as epoxy is transfer molded...
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7145178 |
Methods and apparatus for a semiconductor device
A method for increasing carrier concentration in a semiconductor includes providing a group III nitride semiconductor device, determining a wavelength that increases carrier concentration in the...
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7142769 |
Illumination package
An illumination package is disclosed in the invention. The illumination package includes an optical element, package base, and a light emitter. The optical element is designed to redirect a...
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7141825 |
Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver
A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a...
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7138660 |
Light emitting device
The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different...
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7138648 |
Ultraviolet group III-nitride-based quantum well laser diodes
A pair of undoped spacer layers are provided adjacent to, or near to, a single quantum well aluminum gallium nitride active region. In various exemplary embodiments, the undoped spacer layers are...
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7135348 |
Semiconductor light emitting device and fabrication method thereof
A semiconductor light emitting device is fabricated by forming a mask having an opening on a substrate, forming a crystal layer having a tilt crystal plane tilted from the principal plane of the...
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7135711 |
Electroluminescent body
An electroluminescent component ( 1 ), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component ( 1 ) has a...
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7132677 |
Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN...
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7132692 |
Nanosilicon light-emitting element and manufacturing method thereof
An object of the present invention is to allow the three primary colors of light (red, green, blue) to be emitted, and particularly to allow blue light to be emitted clearly and in a stable manner...
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7132691 |
Semiconductor light-emitting device and method for manufacturing the same
It has a structure in which an active layer ( 5 ) that emits light by electric current injection is sandwiched between an n-type cladding layer ( 4 ) and a p-type cladding layer ( 6 ) made of...
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7129523 |
Light-emitting device
The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a...
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7129524 |
Organic electroluminescent device and method for fabricating the same
An organic electroluminescent device comprising a thin film transistor (TFT), an organic light-emitting diode (OLED), and a capacitor. The TFT is disposed in a non-emitting region of a substrate....
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7127133 |
Monolithically integrated optic triplexer and method for making same
A monolithically integrated optic triplexer is described herein that can be mounted in one transistor outline (TO) can and can be used in a passive optical network. The monolithically integrated...
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7126163 |
Light-emitting diode and its manufacturing method
The present invention provides a surface-mounted LED that is easy to be made thin and having high reliability, as well as provides its manufacturing method. Specifically, the present invention...
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7126052 |
Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to...
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7122735 |
Quantum well energizing method and apparatus
A method and apparatus that converts energy provided by a chemical reaction into energy for charging a quantum well device. The disclosed apparatus comprises a catalyst layer that catalyzes a...
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7122838 |
Solid-state imaging device
A solid-state imaging device is provided, in which both a reduction in a read voltage and enhancement of a transfer efficiency are satisfied. A p type well 507 is formed on an n type...
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7122840 |
Image sensor with optical guard ring and fabrication method thereof
An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light...
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7122839 |
Semiconductor light emitting devices with graded composition light emitting layers
A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the...
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7119372 |
Flip-chip light emitting diode
A flip chip light emitting diode die ( 10, 10′, 10 ″) includes a light-transmissive substrate ( 12, 12′, 12 ″) and semiconductor layers ( 14, 14′, 14 ″) that are selectively patterned...
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7119367 |
Display apparatus
A configuration for decreasing the leakage electric current of a transistor for control for controlling an electric potential holding operation of a control electrode of a transistor for drive for...
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7115907 |
Radiation-emitting semiconductor component
A radiation-emitting semiconductor component with a layer structure ( 12 ) which includes a photon-emitting active layer ( 16 ), an n-doped cladding layer ( 14 ) and a p-doped cladding layer ( 18...
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7115908 |
III-nitride light emitting device with reduced polarization fields
A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the...
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7115915 |
Light-emitting diode
A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a...
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7115909 |
Light emitting device and method of manufacturing the same
Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the...
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7115755 |
Reactive mesogenic azulenes
The invention relates to new reactive mesogenic azulene derivatives, their use as semiconductors or charge transport materials, in optical, electro-optical or electronic devices like for example...
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7112862 |
Light emitting and/or detecting device and method of manufacturing the same
A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type...
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7112462 |
Self-light-emitting apparatus and semiconductor device used in the apparatus
The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the...
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7112821 |
Surface-emitting type light-emitting diode and fabrication method thereof
Disclosed is a surface-emitting type light-emitting diode including a substrate, a p-n junction layer elevated on a portion of the substrate to emit light, and a first isolator layer formed on a...
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7112822 |
Semiconductor device using partial SOI substrate and manufacturing method thereof
A semiconductor device includes a first semiconductor layer formed above a first region of a supporting substrate with a buried oxide layer disposed therebetween and a second semiconductor layer...
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7109524 |
Metal carrier (leadframe) for receiving and contact-connecting electrical and/or optoelectronic components
The invention relates to a metal carrier (leadframe) for receiving and contact-connecting electrical and/or optoelectronic components. According to the invention, the metal carrier has at least two...
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7109522 |
Electroluminescent display devices
In an active matrix electroluminescent display device having an array of pixels, a drive transistor and an electroluminescent display element in each pixel are connected in series between a power...
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7105860 |
Flip chip light-emitting diode package
A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky...
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7106494 |
Controlling resonant cells of a composite material
An apparatus for controlling propagation of incident electromagnetic radiation is described, comprising a composite material having electromagnetically reactive cells of small dimension relative to...
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