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7211829 |
Semiconductor photodetector device
A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first...
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7208768 |
Electroluminescent device
A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a...
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7208752 |
Structure and manufacturing of gallium nitride light emitting diode
A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added...
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7208767 |
Electron-jump chemical energy converter
A method and a device for converting energy uses chemical reactions in close proximity to or on a surface to convert a substantial fraction of the available chemical energy of the shorter lived...
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7206518 |
High speed optoelectronic subassembly and package for optical devices
A high speed optoelectronic subassembly in an optoelectronic package is disclosed that includes a dielectric support having a first electrical trace on a surface thereof and a dielectric member...
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7205573 |
Light-emitting device having a compound substrate
A light-emitting device includes a compound substrate including a high thermal conductive layer and a substrate disposed around the high thermal conductive layer, an adhesive layer formed on the...
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7205169 |
Driving circuit for AMOLED display and driving method thereof
A driving circuit and method for an active matrix organic light emitting diode (AMOLED) display are provided. The driving circuit comprises a power circuit, a linear thermistor, and a pixel...
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7202510 |
Semiconductor luminescent device and manufacturing method thereof
A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first...
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7199401 |
Light-emitting semiconductor device
An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of...
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7199398 |
Nitride semiconductor light emitting device having electrode electrically separated into at least two regions
A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At...
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7200318 |
Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom
The invention comprises a composite material comprising a host material in which are incorporated semiconductor nanocrystals. The host material is light-transmissive and/or light-emissive and is...
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7196426 |
Multilayered substrate for semiconductor device
A multilayered substrate for a semiconductor device, which has a multilayered substrate body formed of a plurality sets of a conductor layer and an insulation layer, and having a face for mounting...
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7196354 |
Wavelength-converting light-emitting devices
A light-emitting device is provided. The device may include a thermally conductive region in contact with a wavelength-converting region (e.g., a phosphor region). The thermally conductive region...
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7196347 |
Semiconductor light emitting device
In a III group nitride compound semiconductor wherein light that has been emitted in a light emitting portion formative layer is reflected by a multilayered reflection layer that is provided...
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7192797 |
Light emitting device and manufacture method thereof
A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure...
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7193236 |
Light emitting device using nitride semiconductor and fabrication method of the same
A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer;...
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7190001 |
GaN based semiconductor light emitting device and method of making the same
A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed...
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7189989 |
Light emitting element
This present invention provides a light emitting element comprising at least one organic layer containing a light emitting layer provided between a pair of electrodes, and in this structure, at...
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7187701 |
Ridge waveguide semiconductor laser
A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first...
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7187007 |
Nitride semiconductor device and method of manufacturing the same
The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An...
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7187006 |
Electro-optical device, method of manufacturing the same, and electronic apparatus
A method of manufacturing an electro-optical device, the electro-optical device having an electro-optical element formed by laminating a first electrode, an electro-optical layer, and a second...
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7183584 |
Quantum well structure and semiconductor device using it and production method of semiconductor element
A semiconductor element excellent in luminous efficiency which sufficiently eliminates the effect of a piezo-electric field with the crystallinity of an active layer well retained. A quantum well...
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7183578 |
Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB 2 , in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer...
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7183588 |
Light emission device
A light emission device. A lead frame comprises a first lead frame segment and a second lead frame segment. A light source is coupled to the first lead frame segment. A wire bond is coupled to the...
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7183577 |
Thin film phosphor-converted light emitting diode device
A light emitting diode capable of emitting first light having a first peak wavelength is combined with a first phosphor layer overlying the light emitting diode, the first phosphor layer capable of...
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7179680 |
Method for producing an optoelectronic component
An optoelectronic component with an optoelectronic transducer is produced with the novel method. The optoelectronic component has a coupling region, which is formed in a radiation-transparent...
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7180101 |
Semiconductor device, and method for manufacturing the same
The present invention provides a semiconductor device including an element that is considered to have less environmental problem (for example iron), and a method for manufacturing the same. More...
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7180648 |
Electro-absorption modulator device and methods for fabricating the same
An electro-absorption light intensity modulator device is provided that comprises a first and a second layer disposed relative to the first layer so as to provide a light-absorbing optical...
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7180096 |
Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capability
An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of...
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7180088 |
Nitride based semiconductor light-emitting device
Nitride based semiconductor light-emitting devices are provided with a sufficiently low contact resistance p-type electrode. The nitride based semiconductor light-emitting devices include a p-type...
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7173339 |
Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure
An etchant including C 2 H x F y , where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six, etches doped silicon dioxide...
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7173287 |
Semiconductor light-emitting device
A semiconductor light-emitting device is made of a group III-nitride compound semiconductor expressed as Al x Ga y In 1−x−y N (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). The semiconductor...
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7173273 |
Semiconductor laser device
A semiconductor laser device has an n-GaAs substrate. On the n-GaAs substrate, by turns, are an n-AlGaInP cladding layer, an AlGaInP/GaInP MQW active layer, a p-AlGaInP first cladding layer, a...
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7173289 |
Light emitting diode structure having photonic crystals
A light emitting diode (LED) structure includes a substrate with a surface and cylindrical photonic crystals, a first type doping semiconductor layer, a first electrode, a light emitting layer, a...
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7173277 |
Semiconductor light emitting device and method for fabricating the same
A semiconductor light emitting device includes a semiconductor multilayer structure comprising a plurality of Group III–V nitride semiconductor layers including two semiconductor layers of...
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7170101 |
Nitride-based semiconductor light-emitting device and manufacturing method thereof
A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The...
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7166868 |
Solderless connection in LED module
The electrodes of a light emitting diode (LED) is coupled to the terminals of a package with solderless pressure contacts. Each package is housed in a module with a bed on which the bottom...
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7166867 |
III-nitride device with improved layout geometry
A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated...
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7166870 |
Light emitting devices with improved extraction efficiency
Light-emitting devices, and related components, systems and methods are disclosed.
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7166871 |
Light emitting systems
Light-emitting systems, and related components, systems and methods are disclosed.
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7164148 |
Light emitting device
A CAN package light emitting device comprises a semiconductor laser 1 bonded on a sub mount 6 and a CAN package 2 for housing the semiconductor laser 1 bonded on the sub mount 6 . The CAN...
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7163831 |
Light-emitting element, production method thereof, and light-emitting apparatus
The present invention provides an light-emitting element in which an organic compound layer containing a carbonate, for example Cs 2 CO 3 and Li 2 CO 3 , as a dopant is in substantially electrical...
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7161183 |
Liquid crystal display and method of manufacturing the same
A method of manufacturing a liquid crystal display device is intended to decrease the number of manufacturing steps. The liquid crystal display device is arranged so that in each pixel area...
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7161301 |
Nitride light-emitting device having an adhesive reflecting layer
A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent...
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7161189 |
LED package including a frame
A power LED package module includes a frame, a chip heat-conductive support, a light-emitting chip and a package body. The frame has a conductive pin, and a support separated from the conductive...
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7161190 |
Semiconductor light-emitting device and method of manufacturing the same
A semiconductor light-emitting device includes a light-emitting element, a first lead frame having a main surface having the light-emitting element mounted thereon, a second lead frame spaced apart...
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7161171 |
Material for use in the manufacturing of luminous display devices
A material including a glass or vitroceramic substrate having a first layer and a second layer deposited thereon, each of the first and second layers including at least one transparent conducting...
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7157741 |
Silicon optoelectronic device and optical signal input and/or output apparatus using the same
A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface...
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7157743 |
Surface-emitting light-emitting device and method of manufacturing the same, optical module, and light-transmission device
A surface-emitting light-emitting device, which can control optical characteristics of emitting light and the manufacturing method thereof, an optical module which includes the surface-emitting...
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7154121 |
Light emitting device with a micro-reflection structure carrier
A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent...
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