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7414270 |
Side-emitting LED package having scattering area and backlight apparatus incorporating the LED lens
The invention provides an LED package and a backlight device incorporating the LED lens. The LED package has a bottom surface and a light exiting surface cylindrically extended around a central...
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7413916 |
Light-emitting device and manufacturing method thereof
A light emitting element having a superior light emitting characteristic is provided by forming a region partly including a phosphor (light emitting region) in manufacturing of a light emitting...
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7415185 |
Buried-waveguide-type light receiving element and manufacturing method thereof
A buried-waveguide light detecting element includes an n-type cladding layer on a Fe-InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer,...
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7411220 |
Semiconductor light emitting device and manufacturing method thereof
A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a...
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7411221 |
Light emitting device having protection element and method of manufacturing the light emitting device
A light emitting device having a monolithic protection element and a method of fabricating the light emitting device are provided. The light emitting device includes: a light emitter having a...
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7411224 |
Light emitting diode module, backlight assembly having the same, and display device having the same
A light emitting diode module, a backlight assembly having the light emitting diode module, and a display device having the backlight assembly. The light emitting diode module includes a light...
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7408182 |
Surface passivation of GaN devices in epitaxial growth chamber
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more...
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7408199 |
Nitride semiconductor laser device and nitride semiconductor device
A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising...
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7408185 |
Organic light emitting device and display using the same
An organic light emitting device (OLED) comprising an anode, an organic emissive layer, a cathode, and an ion-complexing material layer, and a display using the OLED, are provided. The...
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7405431 |
Light-emitting semiconductor device having an overvoltage protector
An LED includes a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating light. A cathode is arranged...
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7402945 |
Light emitting apparatus and method of fabricating the same
Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of...
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7399998 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Light emitting device
A light emitting device can include a substrate, electrodes provided on the substrate, a light emitting diode configured to emit light, the light emitting diode being provided on one of the...
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7399991 |
Organic light emitting device and display device using the same
An organic compound film is composed of a hole transporting region, a first mixed region, a light emitting region, a second mixed region, and an electron transporting region that are connected to...
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7397065 |
Organic electroluminescent device and fabrication methods thereof
The invention discloses an organic electroluminescent device comprising a pixel element. The pixel element comprises a substrate comprising a control area and a sensitive area, a switch device and...
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7397067 |
Microdisplay packaging system
Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal...
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7394104 |
Semiconductor optical device having current-confined structure
Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor...
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7393411 |
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
A method for growing a β-Ga 2 O 3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high...
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7394109 |
LED lighting device
An LED lighting device comprises a seat with a conductor. A light emitting diode is disposed on the conductor of the seat, and has an upper positive conductive pad, a lower negative conductive pad,...
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7390683 |
Method of manufacturing a semiconductor device including a slab layer with a periodic air hole structure and a linear defect region
A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active...
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7385228 |
Semiconductor light-emitting element and light-emitting device
A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer...
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7385225 |
Surface emitting type device, and method for manufacturing the same
A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, and an emission section including a second...
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7385349 |
Light emitting module and lighting unit for vehicle
A light emitting module for generating a light includes a semiconductor light emitting unit for generating a light, a plurality of nanophosphor particles having diameters which are smaller than a...
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7385229 |
Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact
A p-type contact ( 30 ) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer ( 28 ) of a group III-nitride flip chip light emitting diode die ( 10 ) with...
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7384807 |
Method of fabricating vertical structure compound semiconductor devices
A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the...
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7381994 |
Light-emitting device using a three-dimension percolated layer, and manufacturing process thereof
A process for manufacturing an electroluminescent device comprising the steps of:
making an organic or inorganic templating frame, comprising monodispersed nanoelements, in particular...
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7381984 |
Thin film transistor and flat panel display including the same
Provided are a thin film transistor and an organic electrolumienscent display including the same. The organic electroluminescent display includes: a gate electrode; source and drain electrodes that...
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7378685 |
Flat display device
A flat display device including a display region disposed between a substrate and a sealing substrate that are coupled together by a sealing member, an electrical element that is electrically...
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7375380 |
Semiconductor light emitting device
A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an...
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7375378 |
Surface passivated photovoltaic devices
A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline...
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7375379 |
Light-emitting device
The invention provides a light-emitting device and a method of illumination. The light-emitting device includes one or more semiconductor layers, a reflective bottom surface, and a top surface...
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7375377 |
Ingan-based light-emitting diode chip and a method for the production thereof
A light-emitting diode chip ( 1 ), in which over a substrate ( 2 ), a series of epitaxial layers ( 3 ) with a radiation-emitting active structure ( 4 ) based on InGaN is disposed. Between the...
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7374958 |
Light emitting semiconductor bonding structure and method of manufacturing the same
A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits....
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7372066 |
Gallium nitride compound semiconductor device and manufacturing method
A light-emitting element using GaN. On a substrate ( 10 ), formed are an SiN buffer layer ( 12 ), a GaN buffer layer ( 14 ), an undoped GaN layer ( 16 ), an Si-doped n-GaN layer ( 18 ), an SLS...
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7368866 |
Envelope, envelope manufacturing method, image display device, and television display device
Provided is an envelope which includes: a first substrate; a second substrate opposed to the first substrate; a frame interposed between the first substrate and the second substrate; and a low...
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7368309 |
Nitride semiconductor and fabrication method thereof
The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present...
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7365370 |
Light emitting diode package
A light emitting diode package includes a light emitting diode device and a lens encapsulating the light emitting diode device. The lens includes two reflective surfaces disposed at either side of...
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7365368 |
Surface-emitting type wafer and method for manufacturing the same, and burn-in method for surface-emitting type wafers
To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting...
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7361935 |
Semiconductor device, LED print head, that uses the semiconductor, and image forming apparatus that uses the LED print head
A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode....
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7361938 |
Luminescent ceramic for a light emitting device
A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light...
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7358524 |
Nanowire device and method of fabricating the same
A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a...
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7358544 |
Nitride semiconductor light emitting device
A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode ...
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7355212 |
Light emitting element
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode...
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7355208 |
Nitride-based semiconductor element and method of forming nitride-based semiconductor
A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising...
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7355213 |
Electrode material and semiconductor element
As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not...
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7352006 |
Light emitting diodes exhibiting both high reflectivity and high light extraction
The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a...
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7352005 |
Electro-optical device, manufacturing method thereof, and electronic apparatus
The disclosure is directed to an electro-optical device and manufacturing method. In one example, a storage capacitor is disposed above a data line. The storage capacitor has a stacked structure of...
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7348600 |
Nitride semiconductor device, and its fabrication process
The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different...
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7345324 |
Light emitting diodes with graded composition active regions
A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region...
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7345311 |
Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method
A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of...
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7344284 |
Lighting system for a vehicle, with high-intensity power LED
A lighting system for a vehicle comprises a sealed unitary light module including at least one high-intensity power light emitting diode operates with a luminous efficiency of at least about 7...
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