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7045820 |
Light emitting device having a sensor for determining luminous intensity
A light emitting device in accordance with the present invention includes a light emitting element and a light sensor for detecting the luminous intensity of the light emitted from the light...
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7045821 |
Pixel structure of display and driving method thereof
A pixel structure of a display and a driving method thereof are disclosed. The pixel structure disclosed in the invention includes a structure with less elements than that of prior art. The driving...
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7045826 |
Strontium silicate-based phosphor, fabrication method thereof, and LED using the phosphor
A strontium silicate-based phosphor, a fabrication method thereof, and an LED using the strontium silicate-based phosphor are provided. The phosphor is applied to a long wavelength ultraviolet LED,...
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7045808 |
III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method
A III–V nitride semiconductor substrate comprising a III–V nitride semiconductor single crystal at least in a surface portion thereof, the product of [H] and [D] being 1×10 25 or less,...
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7042013 |
Radiation-emitting semiconductor component
A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer ( 18 ), a p-doped cladding layer ( 20 ), and an active layer ( 14 ) based on InGaAlP...
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7042012 |
Semiconductor light-emitting device
An insulation film 150 made of SiO 2 is formed on a p-type layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on...
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7042014 |
Semiconductor device
A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active...
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7042020 |
Light emitting device incorporating a luminescent material
A light emitting device uses a source of exciting radiation such as an light emitting diode to excite a photo luminescent material to provide a source of visible light. The photo luminescent...
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7038246 |
Light emitting apparatus
A light emitting apparatus has: a light emitting element of nitride semiconductor; a phosphor that absorbs light emitted from the light emitting element and emits light with a wavelength different...
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7038242 |
Amorphous semiconductor open base phototransistor array
An array of light-sensitive sensors utilizes bipolar phototransistors that are formed of multiple amorphous semiconductor layers, such as silicon. In the preferred embodiment, the bipolar...
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7034331 |
Material systems for semiconductor tunnel-junction structures
The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction...
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7034339 |
Organic EL display device having host compound and phosphorescent luminous compound, and method of driving same
In an organic electroluminescence display device ( 30 ) comprising an organic EL element ( 26 ) having a structure wherein an organic luminescent medium ( 24 ) is sandwiched between a top electrode...
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7034343 |
Dipolar side-emitting LED lens and LED module incorporating the same
The present invention relates to a dipolar LED and a dipolar LED module incorporating the same, in which an upper hemisphere-shaped base houses an LED chip therein and adapted to radiate light from...
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7030415 |
Semiconductor quantum dot optical amplifier, and optical amplifier module and optical transmission system using the same
The present invention relates to an optical communication, and more particularly, to a wideband wavelength division multiplexing (WDM) optical communication system which can have a broad...
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7030413 |
Photovoltaic device with intrinsic amorphous film at junction, having varied optical band gap through thickness thereof
In a photovoltaic device comprising a thin intrinsic amorphous semiconductor film inserted in a junction portion of a crystalline semiconductor substrate and an amorphous semiconductor film which...
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7030414 |
III group nitride compound semiconductor luminescent element
A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness,...
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7026662 |
Semiconductor device having a photon absorption layer to prevent plasma damage
A MOSFET device structure and a method of manufacturing the same, in which a photon absorption layer is formed over a gate structure and a substrate in order to avoid plasma induced damage to the...
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7026713 |
Transistor device having a delafossite material
A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact...
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7026651 |
Light emitting device having a pseudo-continuous spectrum and lighting apparatus using the same
A light emitting device capable of readily produce a pseudo-continuous spectrum covering a wide wavelength regions at low costs, and of totally solving various problems which have resided in the...
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7026654 |
Package for optical semiconductor
To provide a package for an optical semiconductor having a light-emitting device and a light-receiving device in one package, in which a groove is provided between the light-emitting device and the...
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7026652 |
Semiconductor light emitting diode
A power LED high in light extraction efficiency is obtained without increasing the operation voltage and degrading the reliability. The power LED comprises: epitaxial growth layers including a...
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7026653 |
Semiconductor light emitting devices including current spreading layers
III-nitride or III-phosphide light emitting devices include a light emitting region disposed between a p-type region and an n-type region. At least one heavily doped layer is disposed within either...
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7023025 |
Crystal growth method of nitride semiconductor
The present invention relates to a method of manufacturing a nitride semiconductor, and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor are...
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7019331 |
Green light-emitting microcavity OLED device using a yellow color filter element
An OLED device having green emitting regions disposed over a substrate, and wherein each green emitting region includes one or more light-emitting layer(s), a reflector and a semitransparent...
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7019330 |
Resonant cavity light emitting device
A light emitting device includes a resonant cavity formed by a reflective metal layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through the distributed Bragg...
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7018859 |
Method of fabricating AlGaInP light-emitting diode and structure thereof
A soft transparent adhesive layer is utilized to bond a transparent substrate material onto an AlGaInP light-emitting diode epitaxy on a GaAs substrate, and the GaAs substrate is next removed...
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7012278 |
Light-emitting apparatus driven with thin-film transistor and method of manufacturing light-emitting apparatus
The object of the invention is to simultaneously achieve a reduction in the off current of a switching thin-film transistor and an increase in the on current of a current thin-film transistor in a...
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7012280 |
Organic electroluminescence display device fabricating method of the same
An organic electroluminescence display device includes a substrate including an emission region and a non-emission region, a first electrode on the substrate, a buffer layer on the first electrode,...
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7012284 |
Nitride semiconductor light emitting device and method of manufacturing the same
Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer...
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7009210 |
Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals
A method and apparatus for a tunable optical spectrum analyzer that can measure the optical spectrum of a demultiplexed DWDM signal are presented. The signal level and Optical Signal to Noise Ratio...
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7002182 |
Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit
A semiconductor light emitting device with improved luminous efficiency is provided. An underlying n-type GaN layer is grown on a sapphire substrate, and a growth mask made from SiO 2 film or the...
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7002181 |
Thin film transistor and use of same
Disclosed are a thin film transistor capable of controlling gray level of an organic LED element by discretely controlling current levels, a method of manufacturing the thin film transistor, an...
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7002180 |
Bonding pad for gallium nitride-based light-emitting device
A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the...
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6998642 |
Series connection of two light emitting diodes through semiconductor manufacture process
A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and...
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6995394 |
Thin film transistor panel liquid crystal display
A thin film transistor array panel is provided, which includes: a pair of first and second gate lines; a data line intersecting the gate lines in an insulating manner; a storage electrode line...
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6995400 |
Light emitting device and manufacturing method thereof
In a light emitting device, a light emitting element which includes a transparent substrate and a stack of GaN-based compound semiconductor layers formed on the first surface of the transparent...
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6995454 |
Semiconductor optical integrated device having a light emitting portion, a modulation section and a separation portion
A semiconductor optical integrated device 1 comprises a light-emitting element portion 110 , modulation element portion 120 , and separation portion 130 on a substrate 2 . Light-emitting...
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6995404 |
Techniques for quantum processing with photons and the zeno effect
Techniques are provided that use the quantum Zeno effect to implement practical devices that use single photons as the qubits for quantum information processing. In the quantum Zeno effect, a...
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6992330 |
Encapsulation of “top-emitting” OLED panels
Image display panel of the “top-emitting” OLED type having, on the internal face of the front plate, which plate faces the observer, an array of cavities or grooves that are distributed between...
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6992331 |
Gallium nitride based compound semiconductor light-emitting device
Disclosed are a GaN based compound semiconductor light emitting diode (LED) and a manufacturing method therefor. In the LED, a combination of a light extraction layer and an adaptive layer is...
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6992321 |
Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing...
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6989554 |
Carrier plate for opto-electronic elements having a photodiode with a thickness that absorbs a portion of incident light
A carrier for opto-electronic elements has a carrier plate that is transparent to emitted or absorbed light of an opto-electronic element that is allocated to the carrier. At least one...
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6987285 |
Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding
The semiconductor light emitting device includes a semiconductor substrate formed from InP, an active layer, an n-type cladding layer formed from InGaAsP, and a p-type cladding layer formed from...
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6987281 |
Group III nitride contact structures for light emitting devices
A superlattice contact structure for light emitting devices includes a plurality of contiguous p-type Group III nitride layers. The contact structure may be formed of p-type indium nitride,...
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6984840 |
Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element
An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition...
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6979842 |
Opto-electronic component with radiation-transmissive electrical contact layer
An optoelectronic component with an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation, and at least one electrical contact region having at least one...
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6975011 |
Optoelectronic semiconductor component having multiple external connections
A radiation-emitting and/or radiation-receiving semiconductor component in which a radiation-emitting and/or radiation-receiving semiconductor chip is secured on a chip carrier part of a lead...
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6974974 |
Light emitting devices with layered III -V semiconductor structures, and modules and systems for computer, network and optical communication, using such devices
A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and...
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6972208 |
Method for manufacturing a light emitting diode having a transparent substrate
A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The...
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6967352 |
Thin film formation method, display, and color filter
A thin film formation method in accordance with the present invention forms banks ( 110 ) where affinity bank layers and non-affinity bank layers are alternately layered by repeating a step of...
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