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8174024 Gallium nitride device with a diamond layer  
In one aspect, a device includes a gallium nitride (GaN) layer, a first diamond layer disposed on the GaN layer, a gate structure disposed in contact with the GaN layer and the first diamond layer,...
8164101 Light-emitting device, display and light-emitting method  
A light-emitting device includes a light-emitting portion and an oxygen concentration control portion. The light-emitting portion includes a surface. The light-emitting portion emits light with an...
8148731 Films and structures for metal oxide semiconductor light emitting devices and methods  
Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide...
8129260 Semiconductor substrates having low defects and methods of manufacturing the same  
A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group...
8129717 Semiconductor device and method for manufacturing the same  
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device...
8119513 Method for making cadmium sulfide layer  
A method for making a cadmium sulfide layer is provided. The method includes a number of steps including providing a substrate and disposing a layer containing cadmium on the substrate followed by...
8097885 Compound semiconductor film, light emitting film, and manufacturing method thereof  
Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film...
8097886 Organic electroluminescence device  
An organic electroluminescence device which can prevent the deterioration thereof attributed to moisture by preventing a desiccant from influencing organic electroluminescence elements is provided....
8093095 Semiconductor device with a bulk single crystal on a substrate  
Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on...
8093671 Semiconductor device with a bulk single crystal on a substrate  
Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on...
8093589 Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device  
In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor layer...
8080824 Suppressing recombination in an electronic device  
A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in...
8076677 Semiconductor light emitting device  
A semiconductor light emitting device includes a semiconductor light emitting element, a lead electrically connected to the semiconductor light emitting element, and a resin package covering the...
8071482 Manufacturing method of a silicon carbide semiconductor device  
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched,...
8049225 Semiconductor device and method for manufacturing the same  
An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer...
RE42770 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer  
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective...
8030663 Semiconductor device and manufacturing method thereof  
A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass...
8013323 Nitride semiconductor and method for manufacturing thereof  
A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride...
8008694 Brightness enhancement method and apparatus of light emitting diodes  
A light source with enhanced brightness includes an angle-selective optical filter and a light emitting diode (LED) having a high reflective layer. The angle-selective filter is located on the top...
7999346 Semiconductor device and method of manufacturing the same  
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and...
7989237 Package structure for solid-state lighting devices and method of fabricating the same  
Silicon substrates are applied to the package structure of solid-state lighting devices. Wet etching is performed to both top and bottom surfaces of the silicon substrate to form reflecting cavity...
7989261 Fabricating a gallium nitride device with a diamond layer  
In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the...
7972931 Top-gate thin-film transistors using nanoparticles and method of manufacturing the same  
The present invention relates to a method of manufacturing thin-film transistors using nanoparticles and thin film transistors manufactured by the method. A hydrophilic buffer layers are deposited...
7956360 Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy  
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral...
7951639 Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template  
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning ...
7947999 Luminescent device and method for manufacturing the same  
A luminescent device including a die pad lead composed of an inner lead and an outer lead, a case for uniting the inner lead, a light emitting diode chip mounted on a first predetermined position...
7915747 Substrate for forming semiconductor layer including alignment marks  
A substrate for forming a semiconductor layer includes a plurality of linear convexes or grooves on a surface of the substrate by crystal growth. The plurality of linear convexes or grooves are...
7915606 Semiconductor light emitting device  
A semiconductor light emitting device including a substrate including a plurality of discrete and separated protruding reflective patterns protruding from the substrate and including a valley; a...
7915149 Gallium nitride substrate and gallium nitride layer formation method  
There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106 Ω·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; an...
7897976 Light-emitting device of field-effect transistor type  
The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain...
7880175 UV light-blocking material with metal nanoparticles  
Disclosed herein is an ultraviolet (UV) light-blocking composition comprising a metal nanoparticle that absorbs and blocks a UV light wavelength using a surface plasmon-absorbing wavelength, and a...
7868334 Semiconductor light emitting device  
A semiconductor light emitting device includes a semiconductor light emitting element, a lead electrically connected to the semiconductor light emitting element, and a resin package covering the...
7847297 Ohmic contact on p-type GaN  
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type...
7834343 Nitride semiconductor and method for manufacturing thereof  
A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride...
7821015 Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy  
A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface...
7803669 Organic thin-film transistor substrate and fabrication method therefor  
An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including...
7700959 Semiconductor light-emitting device, semiconductor light-emitting apparatus, and method of manufacturing semiconductor light-emitting device  
A semiconductor light-emitting device capable of obtaining a high light reflectance through the use of a high-reflection metal layer formed on the side of an electrode on one side and capable of...
7696073 Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal  
The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound...
7592629 Gallium nitride thin film on sapphire substrate having reduced bending deformation  
A gallium nitride thin film on sapphire substrate having reduced bending deformation and a method for manufacturing the same. An etching trench structure is formed on a sapphire substrate by...
7557378 Boron aluminum nitride diamond heterostructure  
A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1−x)N) layer disposed in contact with a surface of the diamond layer, where x is b...
7498613 Method of providing electrical separation in integrated devices and related device  
An integrated device includes two sections, such as a DFB laser and an EAM modulator, having a semi-insulating separation region therebetween. The separation region is of a material acting as a...
7495314 Ohmic contact on p-type GaN  
An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type...
7485488 Biomimetic approach to low-cost fabrication of complex nanostructures of metal oxides by natural oxidation at low-temperature  
A metal oxide nanostructure is formed by oxidizing metallic metal in the presence of a solution containing a liquid ligand to form a metal-ligand complex, and decomposing the metal-ligand complex...
7476902 Semiconductor light-emitting device with faceted surfaces and interstice  
A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of...
7442254 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer  
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective...
7420235 Solid-state imaging device and method for producing the same  
In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an...
7404913 Codoped direct-gap semiconductor scintillators  
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped...
7399692 III-nitride semiconductor fabrication  
A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.
7368794 Boron carbide particle detectors  
Boron carbide heteroisomer semiconductor devices are used as particle detectors. The boron carbide semiconductor devices produce electric current in response to incident particles, such as alpha...
7348200 Method of growing non-polar a-plane gallium nitride  
The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is...
Matches 1 - 50 out of 228 1 2 3 4 5 >