Matches 1 - 50 out of 222 1 2 3 4 5 >
Match Document Document Title
7622809 Display device and sputtering target for producing the same  
A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are...
7615868 Electrode, method for producing same and semiconductor device using same  
There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film 101 , and a...
7531904 Al-Ni-B alloy wiring material and element structure using the same  
The present invention provides Al-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent...
7521276 Compliant terminal mountings with vented spaces and methods  
A method of making chip assemblies includes providing an in-process assembly including a semiconductor wafer, a wafer compliant structure overlying a front surface of the wafer and cavities, and...
7501706 Semiconductor devices to reduce stress on a metal interconnect  
Semiconductor devices to reduce stress on a metal interconnect are disclosed. A disclosed semiconductor device comprises: a semiconductor substrate; an uppermost metal interconnect formed on the...
7425765 Zinc-aluminum solder alloy  
A high melting point solder alloy superior in oxidation resistance, in particular a solder alloy provided with both a high oxidation resistance and high melting point suitable for filling fine...
7411219 Uniform contact  
A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide...
7247552 Integrated circuit having structural support for a flip-chip interconnect pad and method therefor  
A technique for alleviating the problems of defects caused by stress applied to bond pads ( 32 ) includes, prior to actually making an integrated circuit ( 10 ), adding dummy metal lines ( 74, 76 )...
7242098 Barrier film integrity on porous low k dielectrics by application of a hydrocarbon plasma treatment  
A method for treating a dielectric material using hydrocarbon plasma is described, which allows for thinner films of barrier material to be used to form a robust barrier.
7235310 Hillock-free aluminum layer and method of forming the same  
A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a...
7224065 Contact/via force fill techniques and resulting structures  
An improved method of forming a semiconductor device structure is disclosed, comprising insertion of a semiconductor wafer into a high-pressure heated chamber and the deposition of a low...
7215029 Multilayer interconnection structure of a semiconductor  
In order to solve the aforementioned problems, the present-invention provides a semiconductor device having a multilayer interconnection structure, wherein an upper interconnection comprises a...
7193326 Mold type semiconductor device  
A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through...
7166921 Aluminum alloy film for wiring and sputter target material for forming the film  
Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than...
7141861 Semiconductor device and manufacturing method there  
A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR...
7129582 Reducing the migration of grain boundaries  
A method of forming a semiconductor device includes implanting a precipitate into a gate conductor of an at least partially formed semiconductor device. The gate conductor including a plurality of...
7119418 Supercritical fluid-assisted deposition of materials on semiconductor substrates  
Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical...
7098539 Electronic device, method of manufacture of the same, and sputtering target  
In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the...
7078733 Aluminum alloyed layered structure for an optical device  
A layered structure of wire(s) comprising a wiring layer made of a low resistance metal containing aluminum, copper or silver; and an alloy layer made of an intermediate phase containing the low...
7071563 Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer  
An interconnect structure of a semiconductor device includes a tungsten plug ( 14 ) deposited in a via or contact window ( 11 ). A barrier layer ( 15 ) separates the tungsten plug ( 14 ) from the...
6955980 Reducing the migration of grain boundaries  
A method of forming a semiconductor device includes implanting a precipitate into a gate conductor of an at least partially formed semiconductor device. The gate conductor including a plurality of...
6930355 Silicided trench gate power mosfets ultrasonically bonded to a surface source electrode  
A semiconductor device comprising a semiconductor substrate having first and second surfaces opposing each other, the substrate including a plurality of cells sharing a common drain region, each of...
6929726 Sputtering target, Al interconnection film, and electronic component  
A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an...
6891277 Semiconductor device alignment mark having oxidation prevention cover film  
Alignment marks of a semiconductor device, formed prior to a step of applying heat treatment in an oxygen atmosphere, include an insulating film, a groove formed in the insulating film during a...
6885064 Contact structure of wiring and a method for manufacturing the same  
First, a conductive material made of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is...
6878465 Under bump metallurgy for Lead-Tin bump over copper pad  
The present invention describes a method including providing a component, the component having a bond pad; forming a passivation layer over the component; forming a via in the passivation layer to...
6864579 Carrier with a metal area and at least one chip configured on the metal area  
A carrier has a metal area that is essentially composed of copper. A chip has a rear side metallization layer. A buffer layer, essentially composed of nickel and having a thickness of between 5 μm...
6861759 Semiconductor apparatus of which reliability of interconnections is improved and manufacturing method of the same  
A semiconductor apparatus includes an under layer, a first insulating layer and a first conductive portion. The under layer is formed above a substrate. The first insulating layer is formed on the...
6861756 Semiconductor integrated circuit device and fabrication process thereof  
In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film...
6853077 Semiconductor device, semiconductor packaging method, assembly and method for fabricating the same  
A semiconductor device includes a semiconductor element having a plurality of element electrodes and a ball electrode electrically connected to at least one element electrode out of the plurality...
6838774 Interlocking conductor method for bonding wafers to produce stacked integrated circuits  
An integrated circuit wafer element and an improved method for bonding the same to produce a stacked integrated circuit. Plugs that extend from one surface of the wafer into the wafer are used to...
6833623 Enhanced barrier liner formation for via  
A high integrity, reliable liner is disclosed for a via in which a titanium aluminide layer is preformed as a lining within a via hole prior to deposition of other conductive materials within the...
6815326 Method of manufacturing semiconductor electrode and semiconductor device provided with electrodes manufactured by the method  
An object of the present invention is to provide a technique for forming an ohmic connection between a semiconductor and a metal efficiently in a short period of time. The present invention...
6791188 Thin film aluminum alloy and sputtering target to form the same  
Disclosed is a thin film aluminum alloy which is limited in the generation of hillocks while maintaining a low specific resistance and hardness irrespective of annealing temperature. In order to...
6777810 Interconnection alloy for integrated circuits  
An interconnection of an aluminum-copper-titanium alloy containing about 0.1 atomic percent titanium.
6768203 Open-bottomed via liner structure and method for fabricating same  
This invention relates to a method of forming a bottomless liner structure. The method involves the steps of first obtaining a material having a via. Next, a first layer is deposited on the...
6762501 Low stress integrated circuit copper interconnect structures  
Isolated metal structures ( 110 ), ( 140 ) are formed adjacent to terminated metal lines ( 100 ), ( 130 ) that are connect by a via ( 120 ). The isolated structures ( 110 ), ( 140 ) act to suppress...
6736947 Sputtering target, A1 interconnection film, and electronic component  
A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an...
6690092 Multilayer interconnection structure of a semiconductor device  
In order to solve the aforementioned problems, the present invention provides a semiconductor device having a multilayer interconnection structure, wherein an upper interconnection comprises a...
6690077 Antireflective coating and field emission display device, semiconductor device and wiring line comprising same  
Titanium aluminum nitrogen (“Ti—Al—N”) is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti—Al—N layer...
6650017 Electrical wiring of semiconductor device enabling increase in electromigration (EM) lifetime  
A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The...
6624519 Aluminum based alloy bridge structure and method of forming same  
A bridge structure, such as an air bridge, includes a bridge element formed of an alloy including aluminum, copper, and lithium. The alloy may also further include silicon and the amount of lithium...
6614119 Semiconductor device and method of fabricating the same  
A semiconductor device having a contact structure that can exhibit superlative step coverage without causing voids or wiring discontinuities, using aluminum or aluminum alloys as a conductive...
6614105 Chip-type semiconductor device  
A TRIAC which is one species of chip-type semiconductors includes an element body made of silicon, electrodes provided on one face of the element body, a molybdenum plate provided on one of the...
6602782 Methods for forming metal wiring layers and metal interconnects and metal interconnects formed thereby  
Methods of forming a metal interconnects include forming an electrically insulating layer having a contact hole therein, on a substrate. A step is also performed to form an electrically conductive...
6600174 Light receiving element and semiconductor laser device  
A corrosion-resistant conductive layer (TiW layer) formed of a corrosion-resistant material is formed to extend from a bonding pad portion to an interconnection portion of a light receiving...
6577005 Fine protuberance structure and method of production thereof  
A fine particle of metal is disposed on a semiconductor substrate. With the exception of a position of disposition of the fine particle of metal, a covering layer is formed on a surface of the...
6573606 Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect  
In the invention an electrically isolated copper interconnect structural interface is provided involving a single, about 50-300 A thick, alloy capping layer, that controls diffusion and...
6563225 Product using Zn-Al alloy solder  
There is provided an electronic device comprising at least one electronic part and a substrate on which said electronic part is mounted, said electronic part and said substrate being bonded by a...
6563221 Connection structures for integrated circuits and processes for their formation  
In a method for forming a connection structure in an integrated circuit, a first conducting material is deposited over a substrate and patterned to form a conducting stud in electrical contact with...
Matches 1 - 50 out of 222 1 2 3 4 5 >