Patents in Class 257/77

Matches 1 - 50 out of 744

Match	Document	Document Title
1	7619257	Devices including graphene layers epitaxially grown on single crystal substrates An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially...
2	7618884	Method and device with durable contact on silicon carbide A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is...
3	7615788	Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry A device and method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer...
4	7615203	Single crystal diamond A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular...
5	7612501	Plasma display apparatus comprising connector A plasma display apparatus comprising a connector is provided. The plasma display apparatus comprises a plasma display panel comprising an electrode of a predetermined width and a connector...
6	7608524	Method of and system for forming SiC crystals having spatially uniform doping impurities In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary...
7	7601986	Epitaxial semiconductor structures having reduced stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
8	7601441	One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe...
9	7591699	Method of manufacturing light-emitting element including the emission layer and the carrier transfer layer Methods of manufacturing light-emitting elements including providing an emissive layer and a carrier transfer layer between a pair of electrodes, the carrier transfer layer mainly made of an...
10	7582932	Silicon carbide semiconductor device and method for manufacturing the same A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor...
11	7579626	Silicon carbide layer on diamond substrate for supporting group III nitride heterostructure device A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device...
12	7569900	Silicon carbide high breakdown voltage semiconductor device A semiconductor device includes an SiC substrate, an SiC layer of a first conductivity type disposed on the upper surface of the SiC substrate, a first SiC region of a second conductivity type...
13	7569496	Method for manufacturing SiC semiconductor device A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes:...
14	7569425	Method for manufacturing thermal interface material with carbon nanotubes A method for manufacturing a thermal interface material includes the steps of: (a) forming an array of carbon nanotubes on a substrate; (b) submerging the carbon nanotubes in a liquid...
15	7564062	Electrode for p-type SiC A p-type electrode containing a first electrode material exhibiting an eutectic reaction at a temperature of 600° C. or lower, and a second electrode material of aluminum (Al).
16	7557378	Boron aluminum nitride diamond heterostructure A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B (x) Al (1−x) N) layer disposed in contact with a surface of the diamond layer, where x is...
17	7553693	Method for making a field effect transistor with diamond-like carbon channel and resulting transistor The field effect transistor comprises a source and a drain connected by a channel controlled by a gate electrode separated from the channel by a gate insulator. The channel is formed by a...
18	7544970	Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable...
19	7544249	Large-diameter SiC wafer and manufacturing method thereof From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer....
20	7538353	Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structures A dual damascene structure comprising a composite barrier/etch stop layer including a lower silicon carbide (SiC) layer and an upper first oxygen doped SiC layer formed over a substrate is...
21	7538352	Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the...
22	7535025	Structure and manufacturing method for a silicon carbide semiconductor device In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide...
23	7531840	Light emitting diode with metal coupling structure An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at...
24	7528424	Integrated circuitry This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon...
25	7528413	Sintered diamond having high thermal conductivity and method for producing the same and heat sink employing it This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly...
26	7525129	Organic light-emitting display It is an object of the present invention to provide an organic light-emitting display of high light-emitting efficiency. The organic light-emitting element comprising a board, upper electrode,...
27	7508045	SiC Schottky barrier semiconductor device A semiconductor device includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC semiconductor layer formed on the substrate, whose impurity concentration is lower than that...
28	7508000	Method of fabricating self-aligned silicon carbide semiconductor devices Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer...
29	7507999	Semiconductor device and method for manufacturing same An accumulation-mode MISFET comprises: a high-resistance SiC layer 102 epitaxially grown on a SiC substrate 101 ; a well region 103 ; an accumulation channel layer 104 having a multiple...
30	7495249	Radiation-emitting semiconducting body with confinement layer A radiation-emitting semiconductor with a radiation-emitting active layer having In x Al y Ga 1-x-y P (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is described. The active layer is arranged between a first...
31	7488984	Doping of SiC structures and methods associated with same Doped silicon carbide structures, as well as methods associated with the same, are provided. The structures, for example, are components (e.g., layer, patterned structure) in MEMS structures. The...
32	7485895	Silicon carbide semiconductor device A silicon carbide semiconductor device is provided with a semiconductor substrate ( 20 ) of silicon carbide of a first conductivity type, a hetero semiconductor region ( 60 ) forming a...
33	7482068	Lightly doped silicon carbide wafer and use thereof in high power devices A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 10 15 cm −3 and a carrier lifetime of at least 50...
34	7481879	Diamond single crystal substrate manufacturing method and diamond single crystal substrate A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion...
35	7473930	Use of patterned CNT arrays for display purposes Method and system for providing a dynamically reconfigurable display having nanometer-scale resolution, using a patterned array of multi-wall carbon nanotube (MWCNT) clusters. A diode, phosphor or...
36	7473929	Semiconductor device and method for fabricating the same Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the...
37	7470930	Silicon carbide semiconductor device A silicon carbide semiconductor device includes a semiconductor element disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate. The...
38	7466019	Rectangular semi-conducting support for microelectronics and method for making same The semi-conducting support comprises a graphite substrate having a front surface and a rear surface and at least a first stack arranged on the front surface of the substrate. The first stack...
39	7439563	High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions...
40	7435993	High temperature, high voltage SiC void-less electronic package An electronic package designed to package silicon carbide discrete components for silicon carbide chips. The electronic package allows thousands of power cycles and/or temperature cycles between...
41	7432534	III-nitride semiconductor light emitting device The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by...
42	7432532	Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from...
43	7432148	Shallow trench isolation by atomic-level silicon reconstruction Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the...
44	7414268	High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are...
45	7411219	Uniform contact A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide...
46	7411218	Method and device with durable contact on silicon carbide A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is...
47	7410923	SiC material, semiconductor device fabricating system and SiC material forming method A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray...
48	7407837	Method of manufacturing silicon carbide semiconductor device Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of...
49	7405430	Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity...
50	7405422	Epitaxial and polycrystalline growth of Si_1-x-yGe_xC_yand Si_1-yC_yalloy layers on Si by UHV-CVD A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is...

Matches 1 - 50 out of 744

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