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9041009 Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device  
A semiconductor device is provided that includes a gate structure present on a substrate. The gate structure includes a gate conductor with an undercut region in sidewalls of a first portion of...
9041007 Semiconductor device  
A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n+-source region formed in an upper portion of an n−-drift layer. An interlayer insulating film covers the gate...
9041010 Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production  
Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application...
9041173 Semiconductor device  
A semiconductor device includes a first conduction type semiconductor substrate, a first conduction type semiconductor deposition layer, a trench, second conduction type wells, a JFET region, a...
9041006 Silicon carbide MOS semiconductor device  
A silicon carbide MOS semiconductor device is disclosed which suppresses degradation of efficiency percentage yield with respect to a breakdown voltage even when a surface region with a high...
9040345 Laser ablation technique for electrical contact to buried electrically conducting layers in diamond  
A method of laser ablation for electrical contact to a buried electrically conducting layer in diamond comprising polishing a single crystal diamond substrate having a first carbon surface,...
9041008 Semiconductor device and method of manufacturing the same  
A semiconductor device of an embodiment includes a first conductive type silicon carbide substrate having first and second main surfaces, a first conductive type silicon carbide layer formed on...
9041049 Power JFET  
In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through...
9041011 Modular power converter having reduced switching loss  
In one implementation, a modular power converter having a reduced switching loss includes a package, a field-effect transistor (FET) including a gate terminal, a drain terminal, and a source...
9035322 Silicon carbide device and a method for manufacturing a silicon carbide device  
A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial...
9035323 Silicon carbide barrier diode  
Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing...
9035321 Semiconductor device and manufacturing method of semiconductor device  
There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and...
9029867 Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates  
A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of...
9029872 Semiconductor device and method for fabricating the same  
The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate. A semiconductor device according to the present inventive...
9029871 Semiconductor device  
A semiconductor device includes a first semiconductor layer surrounding a bottom of the trench gate, a second semiconductor layer disposed along one of end portions of the trench gate in a...
9029870 Semiconductor device and manufacturing method thereof  
A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon...
9029945 Field effect transistor devices with low source resistance  
A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a...
9029873 Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the device  
The semiconductor device includes a SiC substrate; an aluminum nitride layer provided on the substrate and having an island-shaped pattern consisting of plural islands: a channel layer provided on...
9029874 Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer  
A semiconductor device includes a first cell and a second cell. Each of the first cell and the second cell includes a first silicon carbide semiconductor layer including a first region and a...
9029869 Semiconductor device  
One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal...
9029228 Direct and sequential formation of monolayers of boron nitride and graphene on substrates  
The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in...
9029266 Semiconductor device manufacturing method  
According to one embodiment, a semiconductor device manufacturing method includes depositing a silicon film above a semiconductor substrate, forming an insulating film which includes silicon oxide...
9029219 Semiconductor wafer manufacturing method, and semiconductor wafer  
A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the...
9024326 Method and design of an RF thru-via interconnect  
In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned...
9024355 Embedded planar source/drain stressors for a finFET including a plurality of fins  
Fin-defining mask structures are formed over a semiconductor material layer having a first semiconductor material and a disposable gate structure is formed thereupon. A gate spacer is formed...
9024327 Metallization structure for high power microelectronic devices  
A semiconductor device structure is disclosed that includes a wide-bandgap semiconductor portion selected from the group consisting of silicon carbide and the Group III nitrides. An interconnect...
9024329 Silicon carbide trench MOSFET having reduced on-resistance, increased dielectric withstand voltage, and reduced threshold voltage  
A semiconductor device (A1) includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), a trench (3), an insulating layer (5), a...
9024330 Semiconductor device and manufacturing method thereof  
A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming...
9024328 Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture  
A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating...
9018633 Semiconductor device  
A semiconductor device includes an active region in which current flows when the semiconductor device is in an on state and a breakdown voltage structure portion which surrounds the active region....
9018640 Silicon carbide power device equipped with termination structure  
A silicon carbide power device equipped with termination structure comprises a silicon carbide substrate, a power element structure and a termination structure. The silicon carbide substrate...
9018638 MOSFET device  
A MOSFET device is provided. An N-type epitaxial layer is disposed on an N-type substrate. An insulating trench is disposed in the epitaxial layer. A P-type well region is disposed in the...
9018635 Integrated electronic device with edge-termination structure and manufacturing method thereof  
An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first...
9018699 Silicon carbide semiconductor element and method for fabricating the same  
A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a...
9018736 Semiconductor device and method of manufacturing semiconductor device  
A semiconductor device includes a substrate having a hexagonal crystalline structure and a (0001) surface, and conductive films on the surface of the substrate. The conductive films include a...
9018636 Semiconductor device having a plurality of transistors with different crystal face  
According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third...
9018637 Transistor and method for manufacturing same  
According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first...
9018639 Flat SiC semiconductor substrate  
Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares...
9012882 Graphene nanomesh and method of making the same  
A graphene nanomesh includes a sheet of graphene having a plurality of periodically arranged apertures, wherein the plurality of apertures have a substantially uniform periodicity and...
9012921 Light emitting devices having light coupling layers  
A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second...
9012922 Silicon carbide semiconductor device and method for manufacturing same  
A substrate is provided with a main surface having an off angle of 5° or smaller relative to a reference plane. The reference plane is a {000-1} plane in the case of hexagonal system and is a...
9013875 Electronic device  
An electronic device includes a housing, a heat source located in a casing, and a heat dissipation device disposed in a casing. The heat dissipation device is kept apart from the heat source. The...
9012923 Semiconductor device  
A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer on the first SiC epitaxial layer containing a p-type impurity and an...
9012917 Method for bottom-up graphene sheet preparation and bandgap engineering  
A combination of a substrate selected from silicon, silicon carbide or a metal and a grapheme precursor having the following properties: (a) an aromatic structure that forms the basis of the...
9013876 Electronic device  
An electronic device includes a housing, a heat source in the housing, and a heat dissipation device in the housing and separated from the heat source by a distance. The heat dissipation device...
9007769 Electronic device  
An electronic device includes a housing, a heat source located inside a casing, and a heat dissipation device disposed inside a casing. The heat dissipation device is in thermal contact with the...
9006027 Systems and methods for terminating junctions in wide bandgap semiconductor devices  
An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer...
9006819 Power semiconductor device and method for manufacturing same  
A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor...
9006748 Semiconductor device and method for manufacturing same  
This semiconductor device includes a silicon carbide layer of a first conductivity type having first and second principal surfaces and including an element region and a terminal region surrounding...
9006746 Schottky barrier diode and method for manufacturing schottky barrier diode  
A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and...