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8183124 Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy  
A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface...
8183573 Process for forming an interface between silicon carbide and silicon oxide with low density of states  
An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial...
8183086 Diamond GaN devices and associated methods  
Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer...
8183572 Compound semiconductor device and its manufacture method  
A vertical type GaN series field effect transistor having excellent pinch-off characteristics is provided. A compound semiconductor device includes a conductive semiconductor substrate, a drain...
8178940 Schottky barrier diode and method for using the same  
An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is...
8178972 Semiconductor device and manufacturing method therefor  
A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of...
8174024 Gallium nitride device with a diamond layer  
In one aspect, a device includes a gallium nitride (GaN) layer, a first diamond layer disposed on the GaN layer, a gate structure disposed in contact with the GaN layer and the first diamond layer,...
8173095 Method and apparatus for producing graphene oxide layers on an insulating substrate  
In a method of making a functionalized graphitic structure, a portion of a multi-layered graphene surface extending from a silicon carbide substrate is exposed to an acidic environment so as to...
8169022 Vertical junction field effect transistors and diodes having graded doped regions and methods of making  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN...
8168985 Semiconductor module including a switch and non-central diode  
A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode...
8168969 Semiconductor-on-diamond devices and methods of forming  
The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely...
8164100 Semiconductor device and method of manufacturing thereof  
A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype...
8158455 Boron-doped diamond semiconductor  
First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical...
8154026 Silicon carbide bipolar semiconductor device  
In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial...
8154027 Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate  
An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using...
8154092 Silicon carbide MEMS structures and methods of forming the same  
MEMS structures that include silicon carbide micromechanical components, as well as methods of forming and using the same, are provided. The silicon carbide micromechanical components may be...
8154028 Infrared external photoemissive detector  
An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with...
8154074 Silicon carbide semiconductor device and manufacturing method of the same  
A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in...
8147991 One hundred millimeter single crystal silicon carbide wafer  
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed...
8138504 Silicon carbide semiconductor device and method of manufacturing the same  
A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. A coating film made of Si is formed on an initial growth...
8138583 Diode having reduced on-resistance and associated method of manufacture  
A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the...
8134159 Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the same  
A semiconductor device according to one embodiment includes: a semiconductor layer formed on a semiconductor substrate; a gate electrode formed on the semiconductor layer via a gate insulating...
8134167 Light emitting device and manufacturing method of the same  
A light emitting device is provided. In the light emitting device, a multi-layer for intercepting a reverse voltage applied to an active layer is formed between the active layer and a GaN layer....
8129725 Semiconductor sensor  
A semiconductor sensor determines physical and/or chemical properties of a medium, in particular a pH sensor. The semiconductor sensor has an electronic component with a sensitive surface, said...
8124989 Light optoelectronic device and forming method thereof  
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes...
8124983 Power transistor  
A power transistor includes a first terminal, a second terminal and a control terminal. A support layer is formed of a first material having a first bandgap. An active region is formed of a second...
8124984 Semiconductor multilayer structure on an off-cut semiconductor substrate  
A semiconductor device is fabricated on an off-cut semiconductor substrate 11. Each unit cell 10 thereof includes: a first semiconductor layer 12 on the surface of the substrate 11; a second...
8120072 JFET devices with increased barrier height and methods of making same  
Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors...
8119253 Contacts on diamond  
A diamond substrate having a contact, wherein the contact comprises a diamond-like-carbon (DLC) layer on at least part of a surface of the diamond substrate; and at least one metal layer on at...
8115211 Silicon carbide semiconductor device and manufacturing method thereof  
An objective is to provide a manufacturing method of a silicon carbide semiconductor device in which an electric field applied to a gate oxide film can be relaxed and thereby reliability can be...
8114783 Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device  
A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and...
8110846 Diamond semiconductor devices and associated methods  
Semiconductor devices and methods for making such devices are provided. One such method may include forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a...
8110118 Method of manufacturing circuit board  
An adhesive layer, an insulating layer and a copper foil are laminated together on both surfaces of a metallic base material by way of for example thermal press molding. In this case, openings...
8106423 Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors  
A structure using pure silicon dioxide hard marsk for gate pattern. In an embodiment, the present invention provides a partially completed semiconductor integrated circuit device. The device has a...
8097917 Silicon carbide semiconductor device  
A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor...
8097524 Lightly doped silicon carbide wafer and use thereof in high power devices  
A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of tr...
8093598 Power semiconductor device  
A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature...
8093599 Silicon carbide Zener diode  
A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a...
8084784 Semiconductor heterostructure and method for forming same  
The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a1, providing a buffer layer with a second in-plane...
8084773 Semiconductor-on-diamond devices and associated methods  
Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a...
8080826 High performance active and passive structures based on silicon material bonded to silicon carbide  
The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: (1) a Silicon Carbide substrate, (2) a Silicon semiconductor material having a top surface, and...
8080836 Embedded semiconductor component  
A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element...
8080837 Memory devices, transistors, and memory cells  
A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral...
8076677 Semiconductor light emitting device  
A semiconductor light emitting device includes a semiconductor light emitting element, a lead electrically connected to the semiconductor light emitting element, and a resin package covering the...
8076736 Semiconductor device and method for manufacturing the same  
A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate (1) including a silicon carbide layer (2); a high-concentration impurity region (4)...
8071482 Manufacturing method of a silicon carbide semiconductor device  
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched,...
8067776 Method of manufacturing semiconductor device and semiconductor device manufactured thereof  
Methods of manufacturing a semiconductor device including a semiconductor substrate and a hetero semiconductor region including a semiconductor material having a band gap different from that of the...
8058655 Vertical junction field effect transistors having sloped sidewalls and methods of making  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs). The devices have raised regions with sloped sidewalls which...
8053783 Switching device  
A high voltage diamond based switching device capable of sustaining high currents in the on state with a relatively low impedance and a relatively low optical switching flux, and capable of being...
8053784 Silicon carbide semiconductor device and method for manufacturing the same  
A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge...
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