Matches 201 - 250 out of 749 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
6686616 Silicon carbide metal-semiconductor field effect transistors  
SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects...
6680489 Amorphous silicon carbide thin film coating  
Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic...
6670687 Semiconductor device having silicon carbide layer of predetermined conductivity type and module device having the same  
A semiconductor device having a silicon carbide layer of a singular conductivity type. The silicon carbide layer includes a surface having a first region, a second region, and a third region...
6670688 Semiconductor device including at least one schottky metal layer surrounding PN junction  
A semiconductor device which can prevent an operation thereof from being uncontrollable to obtain a high reliability, and can be manufactured easily and can reduce a manufacturing cost. A p-type...
6667495 Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration  
A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second...
6653659 Silicon carbide inversion channel mosfets  
Silicon carbide devices and methods of fabricating silicon carbide devices are provided by forming a first p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate. At least...
6653666 J-FET semiconductor configuration  
J-FET having a first semiconductor region ( 2, 3 ), which comprises a first contact ( 7 ) with a highly doped contact layer ( 8 ) serving as a source disposed between two second contacts ( 9 )...
6649995 Semiconductor device and method of manufacturing the same  
A Schottky diode that achieves a predetermined reverse-direction breakdown voltage even if a state of a surface in a vicinity of a Schottky junction interface changes due to a welding of a bonding...
6649497 Method of forming vias in silicon carbide and resulting devices and circuits  
A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating...
6639273 Silicon carbide n channel MOS semiconductor device and method for manufacturing the same  
A silicon carbide n channel MOS semiconductor device is provided which includes a silicon carbide substrate including a p base region, an n 30 source region and an n + drain region, a gate...
6639247 Semi-insulating silicon carbide without vanadium domination  
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 Ω-cm at room temperature and a concentration of deep level trapping elements that is...
6633056 Hetero-integration of dissimilar semiconductor materials  
A method, structure and article of manufacture related to hetero-integration of dissimilar semiconductor materials. A mask is created on a semiconductor substrate, wherein the mask includes one or...
6627980 Stacked semiconductor device assembly with microelectronic spring contacts  
A three-dimensional, stacked semiconductor device assembly with microelectronic spring contacts, and components thereof, is disclosed. The assembly comprises a plurality of stacked modules, which...
6627964 Gas sensor  
A gas sensor having a pn junction including two discrete electrical conductive-type layers, namely, a first semiconductor layer and a second semiconductor layer, disposed in contact with each...
6614095 Diamond component with rear side contact and a method for the production thereof  
The invention relates to a component which has a function element arranged on a substrate the function element being electrically contacted in a contact region on its rear side facing the...
6614073 SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPPOSITE LATERAL FACES  
A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are...
6610144 Method to reduce the dislocation density in group III-nitride films  
The present invention discloses a semiconductor film having a reduced dislocation density. The film comprises at least one interlayer structure, including a group III-nitride layer, a passivation...
6603145 High temperature circuit apparatus  
A method for interconnecting high-temperature silicon carbide (SiC) devices enables such high-temperature devices to be used in fabricating electronic circuits of significant scale. This method...
6603151 Method and structure for packaging a high efficiency electro-optics device  
A method and a structure for packaging an electro-optics device are disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from...
6600192 Vertical field-effect semiconductor device with buried gate region  
A buried gate region, a buried gate contact region and a gate contact region are provided on an SiC substrate. Thereby, a depletion layer expands in the channel region, and a high withstand voltage...
6597016 Semiconductor device and method for fabricating the same  
An Si 1−y Ge y layer (where 0<y<1), an Si layer containing C, a gate insulating film and a gate electrode are formed in this order on a semiconductor substrate. An Si/SiGe heterounction...
6593594 Silicon carbide n-channel power LMOSFET  
A lateral metal-oxide-semiconductor field effect transistor (LMOSFET) includes a layer of silicon carbide semiconductor material having a p-type conductivity, source and drain regions having n-type...
6590231 Transistor that uses carbon nanotube ring  
A transistor of nanometer size is provided, which is capable of high-speed operation and operates at room temperatures by using carbon nanotubes for semiconductor devices. The transistor uses a...
6586785 Aerosol silicon nanoparticles for use in semiconductor device fabrication  
A stratum or discontinuous monolayer of dielectric-coated semiconductor particles includes a high density of semiconductor nanoparticles with a tightly controlled range of particle sizes in the...
6580125 Semiconductor device and method for fabricating the same  
A DMOS device (or IGBT) includes an SiC substrate 2, an n-SiC layer 3 (drift region) formed in an epitaxial layer, a gate insulating film 6, a gate electrode 7 a , a source electrode 7 b ...
6576973 Schottky diode on a silicon carbide substrate  
A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of...
6577009 Use of sic for preventing copper contamination of dielectric layer  
A semiconductor device includes a first metallization layer, a first diffusion barrier layer, a first etch stop layer, a dielectric layer and a via extending through the dielectric layer, the first...
6573534 Silicon carbide semiconductor device  
A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first...
6570185 Structure to reduce the on-resistance of power transistors  
A power transistor is disclosed that exhibits increased power capacity, reduced on-resistance and prevents current pinch off. The transistor comprises an insulated gate field-effect transistor and...
6563150 High frequency field effect transistor  
A traveling wave FET in which increasing distances between electrodes and the design of semiconductor regions associated with the various electrodes act to increase maximum gain parameters of the...
6552363 Polysilicon FET built on silicon carbide diode substrate  
A polysilicon FET is built atop a SiC diode to form a MOSgated device. The polysilicon FET includes an invertible layer of polysilicon atop the surface of a SiC diode which has spaced diode...
6534792 Microelectronic device structure with metallic interlayer between substrate and die  
A microelectronic device structure includes a diamond-containing substrate, and a metallic interlayer affixed to the diamond. The interlayer is made of a metal such as copper, silver, or gold, has...
6534793 Control valve for an exhaust gas recirculation system of an internal combustion engine  
The invention relates to a valve for controlling the quantity of exhaust gas recycled in an exhaust gas recirculation system of an internal combustion engine, comprising a shutoff valve ( 3 )...
6531751 Semiconductor device with increased gate insulator lifetime  
A semiconductor device in which hole-induced damage to the dielectric layer is reduced is disclosed. In the device, a layer of a conductive, high bandgap (i.e. a material with a bandgap greater...
6531714 Process for the production of a semiconductor device having better interface adhesion between dielectric layers  
A method for manufacturing a semiconductor device having improved adhesion at an interface between layers of dielectric material, comprising the steps of forming a first layer of dielectric...
6528373 Layered dielectric on silicon carbide semiconductor structures  
A dielectric structure is disclosed for silicon carbide-based semiconductor devices. In gated devices, the structure includes a layer of silicon carbide, a layer of silicon dioxide on the silicon...
6525335 Light emitting semiconductor devices including wafer bonded heterostructures  
A method of forming a light emitting semiconductor device includes fabricating a stack of layers comprising an active region, and wafer bonding a structure including a carrier confinement...
6525343 Micro-chip for chemical reaction  
A microchip for chemical reaction capable of rapidly performing an experiment irrespective of the types of the chemical substrates used for the experiment under various experimental conditions,...
6525340 Semiconductor device with junction isolation  
A field effect transistor (FET) is disclosed. In an exemplary embodiment of the invention, the FET includes an active semiconductor region defined upon a substrate, the active semiconductor region...
6518637 Cubic (zinc-blende) aluminum nitride  
Device quality, single crystal film of cubic zinc-blend aluminum nitride (AlN) is deposited on a cubic substrate, such as a silicon (100) wafer by plasma source molecular beam epitaxy (PSMBE). The...
6515302 Power devices in wide bandgap semiconductor  
An insulated gate field effect transistor is disclosed. The transistor includes a semi-insulating silicon carbide substrate, an epitaxial layer of silicon carbide layer adjacent the semi-insulating...
6507046 High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage  
A high-resistivity silicon carbide single crystal is disclosed that includes at least one compensated dopant having an electronic energy level far enough from an edge of the silicon carbide bandgap...
6507047 Power transistors for radio frequencies  
A field effect transistor is made on a chip comprising a SiC-substrate. The transistor includes a plurality of densely stacked parallel transistor cells occupying totally a rectangular area. Each...
6504176 Field effect transistor and method of manufacturing the same  
There are provided a field effect transistor with a high withstand voltage and low loss and a method of manufacturing the same. The field effect transistor includes an n-type substrate, an n-type...
6503782 Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors  
A method and device produced for design, construction, and use of integrated circuits in wide bandgap semiconductors, including methods for fabrication of n-channel and p-channel junction field...
6501099 Modified-anode gate turn-off thyristor  
A gate turn-off thyristor includes a substrate formed of n-type silicon carbide; a growth buffer formed of n-type silicon carbide and positioned to overlie said substrate; a field buffer region...
6489634 Microelectronic device structure utilizing a diamond inlay in a package flange  
A microelectronic device structure includes a package flange with a body having a body upper surface, a substantially circular body interior sidewall defining an opening in the body upper surface,...
6486559 COPPER WIRING STRUCTURE COMPRISING A COPPER MATERIAL BURIED IN A HOLLOW OF AN INSULATING FILM AND A CARBON LAYER BETWEEN THE HOLLOW AND THE COPPER MATERIAL IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
The object of the present invention is to provide a copper wiring structure in which finely processed copper wiring in a wiring structure in grooves is steadily formed with a high reliability and a...
6476408 Field emission device  
A field-emission device includes at least one plane cathode made of conductive material with a low electron affinity located on a face of a substrate carrying a layer of a dielectric material,...
6465807 Silicon carbide vertical MOSFET and method for manufacturing the same  
A silicon carbide vertical MOSFET is provided which includes: a first conductivity type silicon carbide substrate; a first conductivity type drift layer comprising silicon carbide which is formed...
Matches 201 - 250 out of 749 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >