Patents in Class 257/77

Matches 101 - 150 out of 749

Match	Document	Document Title
101	7183576	Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is...
102	7173285	Lithographic methods to reduce stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
103	7173284	Silicon carbide semiconductor device and manufacturing method A silicon carbide semiconductor device that includes J-FETs has a drift layer of epitaxially grown silicon carbide having a lower impurity concentration level than a substrate on which the drift...
104	7170097	Inverted light emitting diode on conductive substrate An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at...
105	7166866	Edge termination for silicon power devices A silicon semiconductor die comprises a heavily doped silicon substrate and an upper layer comprising doped silicon of a first conduction type disposed on the substrate. The upper layer comprises a...
106	7164154	Gate wiring layout for silicon-carbide-based junction field effect transistor A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first...
107	7161182	Charge separation type heterojunction structure and manufacturing method thereof A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode...
108	7154153	Memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored...
109	7148512	Thermal interface with silver-filled carbon nanotubes An exemplary thermal interface ( 40 ) includes a silver colloid base ( 32 ), and an array of carbon nanotubes ( 22 ) disposed in the silver colloid base uniformly. The carbon nanotubes have...
110	7141824	Transistor with variable electron affinity gate A SiC material composition is selected to establish the barrier energy between the SIC gate and a gate insulator. Various embodiments of selected SiC material composition include a memory...
111	7135420	Semiconductor device and manufacturing method thereof Single crystal silicon is grown in a [100] direction to make a bulk. Next, a silicon substrate with a normal of a surface extending in an inclined direction from a [100] direction is cut from the...
112	7132355	Method of forming a layer comprising epitaxial silicon and a field effect transistor This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon...
113	7129133	Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film Disclosed are methods and structures for fabrication of reliable and efficient memory cells. The methods involve formation of a conformal diffusion barrier layer in a via, deposition of an...
114	7122837	Structures formed in diamond N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single...
115	7118970	Methods of fabricating silicon carbide devices with hybrid well regions MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon...
116	7109521	Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first...
117	7109548	Operating a memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored...
118	7105875	Lateral power diodes A lateral power diodes with an optimal drift doping formed in widebandgap semiconductors like Silicon Carbide, Aluminum Nitride and Gallium Nitride and Diamond are provided with a voltage rating...
119	7091522	Strained silicon carbon alloy MOSFET structure and fabrication method thereof A MOSFET structure utilizing strained silicon carbon alloy and fabrication method thereof. The MOSFET structure includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon...
120	7078329	Method of manufacturing silicon carbide semiconductor device An insulating film ( 2 ) is formed on a semiconductor substrate ( 1 ) formed of silicon carbide. A contact hole ( 3 ) is formed in the insulating film ( 2 ) to expose a part of the upper surface of...
121	7071490	Group III nitride LED with silicon carbide substrate The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a...
122	7067847	Semiconductor element On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has...
123	7067336	Electron-emitting device, electron source and image-forming apparatus, and manufacturing methods thereof An electron-emitting device having favorable electron emitting characteristic stable for a long time, which is manufactured by a method comprising the steps of disposing an electrically conductive...
124	7064352	Diamond semiconductor device and method for manufacturing the same A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the...
125	7064354	Color mixing light emitting diode A color mixing light emitting diode (LED) is disclosed. The present invention is featured in that a plurality of LEDs emitting different colors of light can be electrically connected in series...
126	7061021	System and method for fabricating diodes This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating...
127	7061027	Semiconductor device with heterojunction An aspect of the present invention provides a semiconductor device that includes a semiconductor base made of a first semiconductor material of a first conductivity type, a hetero-semiconductor...
128	7053411	Method for treating semiconductor processing components and components formed thereby A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and...
129	7052932	Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication A method of forming a dual damascene structure with improved performance is described. A first etch stop layer comprised of oxygen doped SiC is deposited on a SiC barrier layer to form a composite...
130	7049160	Gallium nitride compound semiconductor device and method of manufacturing the same A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate...
131	7045879	Silicon carbide semiconductor device having enhanced carrier mobility The principal surface of a p-type SiC substrate ( 1 ) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n + source region ( 2 ) and an n + drain region ( 3 ) are formed in a...
132	7030418	Structure of chip carrier for semiconductor optical device, optical module, and optical transmitter and receiver A chip carrier includes a metal-coated portion formed on a front surface of a substrate and to be mounted a device, and a rear surface of the substrate being coated with a metal, in which a...
133	7026669	Lateral channel transistor A lateral channel transistor with an optimal conducting channel formed in widebandgap semiconductors like Silicon Carbide and Diamond is provided. Contrary to conventional vertical design of power...
134	7026650	Multiple floating guard ring edge termination for silicon carbide devices Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based...
135	7023010	Si/C superlattice useful for semiconductor devices A Si/C superlattice useful for semiconductor devices comprises a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon...
136	7009219	Diamond ultraviolet light-emitting device A small, simple current-injection diamond ultraviolet light-emitting device comprising a high-quality diamond grown by chemical vapor deposition (CVD) method ( 1 ), a surface conductive layer ( 2 )...
137	7009209	Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide...
138	6995397	Semiconductor device A semiconductor device having an accumulation channel SiC-MISFET structure includes a p-type SiC layer 10 formed on an SiC substrate, an n-type channel layer 20, a gate insulating film 11, a...
139	6995036	Production method of α-SiC wafer The present invention has its object to make it possible to produce an α-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and...
140	6995396	Semiconductor substrate, semiconductor device and method for fabricating the same A SiC bulk substrate whose top face has been flattened is placed in a vertical thin film growth system to be annealed in an inert gas atmosphere. A material gas of Si is then supplied at a flow...
141	6989553	Semiconductor device having an active region of alternating layers An active region 30 is formed on a substrate 3 , which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and...
142	6984840	Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element An optical semiconductor device includes an SiC substrate having an n-type conductivity, and an AlGaN buffer layer having an n-type conductivity formed on the SiC substrate with a composition...
143	6974720	Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of...
144	6972436	High voltage, high temperature capacitor and interconnection structures Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The...
145	6956249	Termination of semiconductor components The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section ( 10 a , 10...
146	6956238	SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) and methods of fabricating silicon carbide MOSFETs are provided. The silicon carbide MOSFETs have an n-type silicon...
147	6956239	Transistors having buried p-type layers beneath the source region The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between...
148	6949769	Suppression of MOSFET gate leakage current A MOSFET has greatly reduced leakage current between the gate electrode and the channel, source and drain regions. The gate electrode materials have lower electron affinities than the channel,...
149	6946739	Layered semiconductor devices with conductive vias A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating...
150	6943376	Electrode for p-type SiC An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an...

Matches 101 - 150 out of 749

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