Patents in Class 257/77

Matches 51 - 100 out of 749

Match	Document	Document Title
51	7411218	Method and device with durable contact on silicon carbide A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is...
52	7410923	SiC material, semiconductor device fabricating system and SiC material forming method A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray...
53	7407837	Method of manufacturing silicon carbide semiconductor device Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of...
54	7405430	Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity...
55	7405422	Epitaxial and polycrystalline growth of Si_1-x-yGe_xC_yand Si_1-yC_yalloy layers on Si by UHV-CVD A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is...
56	7399692	III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.
57	7394103	All diamond self-aligned thin film transistor A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically...
58	7391057	High voltage silicon carbide devices having bi-directional blocking capabilities High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC...
59	7391058	Semiconductor devices and methods of making same A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of...
60	7381992	Silicon carbide power devices with self-aligned source and well regions Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source...
61	7381993	High-breakdown-voltage insulated gate semiconductor device In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the <11-20>...
62	7378325	Semiconductor device and manufacturing method thereof A high voltage semiconductor device having a high current gain hFE is formed with a collector region ( 20 ) of a first conduction type, an emitter region ( 40 ) of the first conduction type, and a...
63	7374609	Optically variable pigments having an asymmetrical layer structure The present invention relates to pigments whose particles have a length of from 2 μm to 5 mm, a width of from 2 μm to 2 mm and a thickness of from 50 nm to 1.5 μm and a ratio of length to...
64	7375377	Ingan-based light-emitting diode chip and a method for the production thereof A light-emitting diode chip ( 1 ), in which over a substrate ( 2 ), a series of epitaxial layers ( 3 ) with a radiation-emitting active structure ( 4 ) based on InGaN is disposed. Between the...
65	7372087	Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage A structure for use in a static induction transistor includes a semiconductor body having first and second semiconductor layers on a substrate, with the second layer having a dopant concentration...
66	7368763	Semiconductor device and manufacturing method thereof A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in...
67	7365363	Silicon carbide semiconductor device and method for manufacturing the same A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed...
68	7345310	Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon...
69	7345309	SiC metal semiconductor field-effect transistor A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at...
70	7339776	Silicon carbide diode voltage limiter A voltage excursion control system for limiting transient voltage peaks in electrical circuits otherwise occurring across selected components therein in response to changing conditions in such...
71	7335929	Transistor with a strained region and method of manufacture A transistor structure comprises a channel region overlying a substrate region. The substrate region comprises a first semiconductor material with a first lattice constant. The channel region...
72	7326962	Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between...
73	7312491	Charge trapping semiconductor memory element with improved trapping dielectric A semiconductor memory element, which can be controlled via field effect, includes a semiconductor substrate of a first conduction type, a first doping region of a second conduction type provided...
74	7307313	Semiconductor device including a vertical field effect transistor, having trenches, and a diode A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a...
75	7301173	Group III-nitride light emitting device The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device...
76	7297626	Process for nickel silicide Ohmic contacts to n-SiC A Ni 2 Si-nSiC Ohmic contact is formed by pulsed laser ablation deposition (PLD) of Ni 2 Si source target deposited on a n-SiC substrate or SiC substrate wafer with SiC epilayer. The Ni 2 Si Ohmic...
77	7294859	Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The...
78	7294858	Semiconductor device and method of manufacturing the same A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and...
79	7274040	Contact and omnidirectional reflective mirror for flip chipped light emitting devices A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first...
80	7274025	Detector for detecting particle beams and method for the production thereof The invention relates to a detector, and to a method for the production thereof, for detecting a high-energy and high-intensity particle beam ( 2 ), which comprises a crystalline semi-conductor...
81	7271416	Strain compensated semiconductor structures Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a...
82	7268361	Electron emission device The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5 , whereby the field emission cathode 5 comprises a...
83	7262434	Semiconductor device with a silicon carbide substrate and ohmic metal layer A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and...
84	7256425	Methods of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm....
85	7253442	Thermal interface material with carbon nanotubes A thermal interface material ( 40 ) includes a macromolecular material ( 32 ), and a plurality of carbon nanotubes ( 22 ) embedded in the macromolecular material uniformly. The thermal interface...
86	7247513	Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing...
87	7244963	Double gate field effect transistor with diamond film A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of...
88	7235857	Power semiconductor device A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back...
89	7235853	Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film A fingerprint detection device has a fingerprint sensor chip and a diamond-like carbon (DLC) film covering the outermost surface of the sensor chip. The DLC film provides sufficient strength and...
90	7235920	Display device and method of its manufacture A display device and method for its manufacture. In a display device with a first array of individual display elements and a second array of control transistors for the display elements, control...
91	7230275	Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate...
92	7230274	Reduction of carrot defects in silicon carbide epitaxy Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide...
93	7230273	Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor A semiconductor module comprises independently operable segments 1 (semiconductor elements) on a SiC substrate. Each segment 1 comprises a source electrode pad 2 and a gate electrode pad 3 ...
94	7226805	Sequential lithographic methods to reduce stacking fault nucleation sites An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first...
95	7221010	Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and...
96	7217954	Silicon carbide semiconductor device and method for fabricating the same An inventive semiconductor device is provided with: a silicon carbide substrate 1; an n-type high resistance layer 2; well regions 3 provided in a surface region of the high resistance layer ...
97	7196929	Method for operating a memory device having an amorphous silicon carbide gate insulator A floating gate transistor has a reduced barrier energy at an interface with an adjacent amorphous silicon carbide (a-SiC) gate insulator, allowing faster charge transfer across the gate insulator...
98	7193241	Ultraviolet sensor and method for manufacturing the same An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The...
99	7190076	Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is...
100	7183575	High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which...

Matches 51 - 100 out of 749

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