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4721535 |
Solar cell
A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped...
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4624905 |
Electrophotographic photosensitive member
An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photoconductivity...
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4598164 |
Solar cell made from amorphous superlattice material
A semiconductor device which includes an active region including a superlattice amorphous material wherein the energy gap has a predetermined value. A preferred embodiment of the device is a solar...
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4571447 |
Photovoltaic cell of semi-conducting diamond
A diamond or diamond-like material containing a p-type semi-conducting layer, an n-type semi-conducting layer and a p-n junction for use as a photovoltaic cell, particularly a solar cell. The...
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4571610 |
Semiconductor device having electrically insulating substrate of SiC
Disclosed are semiconductor devices in which an electrical insulating substrate is made of a sintered silicon carbide body having thermal conductivity of at least 0.4 cal/cmsec°C. at 25°...
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4559552 |
PIN semiconductor photoelectric conversion device with two oxide layers
A PIN type semiconductor photoelectric conversion device is provided with a non-single-crystal semiconductor laminate member which comprises a first non-single-crystal semiconductor layer of a...
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4554203 |
Method for manufacturing large surface silicon crystal bodies for solar cells, and bodies so produced
An improved large surface, quasi-monocrystalline silicon crystal bodies of the type used in solar cells. The bodies are produced by reacting at least the surface of a carbon fiber fabric with...
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4531142 |
Light emitting diode having silicon carbide layers
A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited...
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4525429 |
Porous semiconductor dopant carriers
New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus,...
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4465750 |
Photoconductive member with a -Si having two layer regions
A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed...
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4452875 |
Amorphous photoconductive member with α-Si interlayers
A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a...
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4453173 |
Photocell utilizing a wide-bandgap semiconductor material
A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the...
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4277293 |
Growth of synthetic diamonds having altered electrical conductivity
A method of growing a diamond crystal which comprises bombarding the diamond with a flux of carbon ions of sufficient energy to penetrate the diamond crystal and cause crystal growth which is at...
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4268842 |
Electroluminescent gallium nitride semiconductor device
An electroluminescent semiconductor device includes a monocrystalline substrate, an n-type gallium nitride layer on the substrate, an active gallium nitride layer on the n-type layer which is doped...
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4224636 |
Semiconductor device with thermally compensating SiO.sub.2 -silicate glass-SiC passivation layer
A semiconductor device comprising a semiconductor substrate and protective films formed thereon. The protective films comprise at least one silicon carbide film which may be pure or may contain...
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4161743 |
Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
A semiconductor device includes a semiconductor substrate and a silicon carbide film formed in direct contact with the surface of the semiconductor substrate. The silicon carbide film may have a...
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4158807 |
Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
A charge-flow transistor having a gapped gate electrode and a thin-film sensor material in the gap, which sensor material is sensitive to a property of the ambient environment and has a surface...
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4137355 |
Ceramic coated with molten silicon
It is desirable to coat large area, thin sheets of large-grain polycrystalline silicon on an inexpensive ceramic substrate for use in solar cell applications and the like. Such ceramic substrate as...
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4109271 |
Amorphous silicon-amorphous silicon carbide photovoltaic device
A layer of amorphous silicon-carbide prepared by a glow discharge in a mixture of silane, hydrocarbon and doping gases is at the solar radiation incident surface of a photovoltaic device. The...
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4071945 |
Method for manufacturing a semiconductor display device
A method for manufacturing a semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second...
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4028149 |
Process for forming monocrystalline silicon carbide on silicon substrates
A method for forming monocrystalline silicon carbide on a silicon substrate by converting a portion of the monocrystalline silicon substrate into a porous silicon substance by anodic treatment...
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3999206 |
Semiconductor indicating device and method for production of same
A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 μm, the concentration of neutral atoms in the n-region is from 1.5×10...
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3986193 |
Semiconductor SiCl light source and a method of manufacturing same
A semiconductor light source using nitrogen-doped n-type silicon carbide with a p-n junction electroluminescent within the visible region of the spectrum, and with a p-layer doped with an acceptor...
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3982262 |
Semiconductor indicating instrument
A semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type...
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3972749 |
Semiconductor light source on the basis of silicon carbide single crystal
A semiconductor light source on the basis of n-type silicon carbide single crystal, wherein an epitaxial silicon carbide film of the same type is disposed on the basic single crystal, a p-n...
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3838441 |
SEMICONDUCTOR DEVICE ISOLATION USING SILICON CARBIDE
A modified semiconductor substrate structure has been developed for use in the fabrication of multiphase monolithic integrated microcircuits characterized by dielectric isolation, i.e., circuits...
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3791859 |
STRESS GRADING COATINGS FOR INSULATORS
A stress grading coating for insulators comprising a non-linear semiconducting coating, such as silicon carbide, or the like using a glass binder having a fusion temperature of less than 850°C.
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3675313 |
PROCESS FOR PRODUCING SELF ALIGNED GATE FIELD EFFECT TRANSISTOR
This disclosure relates to a process for preparing a self-aligned gate field effect transistor in which the source-drain spacing is automatically held to a minimum as a result of the processing steps.
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3665589 |
LEAD ATTACHMENT TO HIGH TEMPERATURE DEVICES
A technique for the attachment of leads to electronic devices which permits operation of the devices over a wide temperature range. The technique contemplates the use of core conductors having a...
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3665193 |
DIAMOND NUCLEAR RADIATION DETECTOR
A diamond nuclear radiation detector comprising a diamond crystal plate and ontacts on the opposite sides of said plate adapted for the application of an electric field to said diamond crystal...
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3662458 |
ELECTRICAL CONTACT FOR SILICON CARBIDE MEMBERS
Tantalum and gold alloy electrical contacts are applied to selected areas of a body of silicon carbide. An oxidized surface is first produced on the silicon carbide body and removed from those...
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3636397 |
SINGLE-CRYSTAL SILICON CARBIDE DISPLAY DEVICE
The display device is a wafer of N-type silicon carbide having lines or segments of lines scribed into one face in a selected design such as an alpha-numeric or a grid of closely spaced dots. After...
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3634149 |
METHOD OF MANUFACTURING ALUMINIUM NITRIDE CRYSTALS FOR SEMICONDUCTOR DEVICES
A method of forming aluminum nitride single crystals of large area and silicon carbide-aluminum nitride heterojunctions using a modified Lely method. Aluminum nitride is introduced, as a vapor...
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3629011 |
METHOD FOR DIFFUSING AN IMPURITY SUBSTANCE INTO SILICON CARBIDE
Impurity ions are accelerated under an irradiation condition of ordinary temperature or relatively low temperature and injected into silicon carbide from its surface. The injected silicon carbide...
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3629670 |
ELECTRICAL CONTACT TO SILICON CARBIDE
Yttrium metal provides a low-resistance electrical contact to a silicon carbide wafer, useful in the manufacture of solid-state lamps. A preferred method comprises the steps of placing a small...
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3628187 |
NEGATIVE RESISTANCE AVALANCHE DIODES WITH SCHOTTKY BARRIER CONTACTS
A negative resistance avalanche diode comprises only a bulk semiconductor wafer contained between opposite Schottky barrier contacts.
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3615930 |
METHOD OF MANUFACTURING SILICON CARBIDE CRYSTALS
A method of manufacturing silicon carbide crystals with a narrow PN junction in which during growth of such crystals by recrystallization and/or condensation in an inert gas atmosphere in a space...
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3611064 |
OHMIC CONTACT TO N-TYPE SILICON CARBIDE, COMPRISING NICKEL-TITANIUM-GOLD
A light-emitting silicon carbide diode comprising a chip of SiC containing a PN junction in which ohmic contact is made to the N-side by thin evaporated films of nickel, titanium and gold...
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3571919 |
SEMICONDUCTOR DEVICE FABRICATION
Disclosed is a method of forming a semiconductor device having circuit components in a semiconductor substrate which are electrically isolated from each other by a layer of etch resistant material....
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3562609 |
SOLID STATE LAMP UTILIZING EMISSION FROM EDGE OF A P-N JUNCTION
The diffusion of P-type dopants into N-type silicon carbide in order to create junctions produces a surface layer of P-type material all over and around the silicon carbide platelet. By cutting the...
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3530324 |
ELECTROLUMINESCENT SILICON CARBIDE DIODE WITH SHARPLY PEAKED LIGHT EMISSION FROM THE EDGE OF THE JUNCTION
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3527626 |
SILICON CARBIDE LUMINESCENT MATERIALS
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3517281 |
LIGHT EMITTING SILICON CARBIDE SEMICONDUCTOR JUNCTION DEVICES
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3510732 |
SOLID STATE LAMP HAVING A LENS WITH RHODAMINE OR FLUORESCENT MATERIAL DISPERSED THEREIN
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3501356 |
PROCESS FOR THE EPITAXIAL GROWTH OF SILICON CARBIDE
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3497773 |
PASSIVE CIRCUIT ELEMENTS
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3495939 |
MANUFACTURE OF DENSE BODIES OF SILICON CARBIDE
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3496010 |
MACHINING SILICON COATING PRIOR TO VAPOR DEPOSITION OF SILICON CARBIDE
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3481825 |
DIRECT BONDING OF DIAMOND TO MOLYBDENUM
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3481776 |
ION IMPLANTATION TO FORM CONDUCTIVE CONTACT
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