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5495126 |
Polycrystalline diamond heat sink having major surfaces electrically insulated from each other
A polycrystalline diamond is prepared by chemical vapor deposition (step 101). A surface of the polycrystalline diamond is metallized (step 102). The metallized surface of the polycrystalline...
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5493131 |
Diamond rectifying element
The rectifying element is comprised of two electrodes, an undoped diamond film, and a B-doped p-type diamond film. The diamond films are formed of highly-oriented diamond films, of which at least...
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5491348 |
Highly-oriented diamond film field-effect transistor
A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness...
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5488232 |
Oriented diamond film structures on non-diamond substrates
The present invention provides a semiconductor device comprising a first layer of a metal silicide and a second layer on the first metal silicide layer; the second layer comprising a semiconducting...
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5483084 |
Diamond covered member and process for producing the same
A diamond covered member is provided which has a diamond crystal layer formed by vapor phase synthesis on a surface of a substrate, the diamond crystal layer being constituted of plate-shaped...
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5471072 |
Platinum and platinum silicide contacts on β-silicon carbide
Gold, which is the commonly used metallization on β-silicon carbide, is known to degrade at temperatures above 450° C. It also exhibits poor adhesion to silicon carbide. Schottky contacts with...
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5468978 |
Forming B.sub.1-x C.sub.x semiconductor devices by chemical vapor deposition
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio...
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5466948 |
Monolithic silicon opto-coupler using enhanced silicon based LEDS
A monolithic opto-coupler employing silicon-insulator technology in which at least two p-type silicon islands disposed on said insulating layer and a light emitting diode having enhanced light...
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5465249 |
Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
A random access memory (RAM) cell in 6H-SiC having storage times when all bias is removed long enough to be considered nonvolatile. The nonvolatile random access memory (NVRAM) cell comprises a bit...
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5463271 |
Structure for enhancing electron emission from carbon-containing cathode
A cathode structure contains electronegative atoms (22), which consist of oxygen and/or fluorine, chemically bonded to a carbon-containing cathode (10). Atoms (24R) of electropositive metal are...
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5455432 |
Diamond semiconductor device with carbide interlayer
A diamond semiconductor device with a carbide interlayer includes a diamond layer having a semiconducting diamond region of first conductivity type therein and an insulated gate structure on a face...
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5453628 |
Microelectronic diamond capacitive transducer
A capacitive transducer includes a first electrically conductive layer, and a diamond diaphragm mounted opposite the first electrically conductive Layer so as to be moveable relative to the first...
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5451798 |
Semiconductor device and its fabrication method
A semiconductor device comprises an insulating region residing adjacent to a first semiconductor region, a control electrode residing via the insulating region, a second semiconductor region and a...
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5451797 |
Method of fabricating a silicon carbide vertical MOSFET and device
A silicon carbide vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with...
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5449924 |
Photodiode having a Schottky barrier formed on the lower metallic electrode
A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as...
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5449925 |
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices are obtained by forming an amorphous silicon carbide termination region in a monocrystalline silicon carbide...
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5442199 |
Diamond hetero-junction rectifying element
An undoped highly-oriented diamond film is formed on a single crystalline silicon substrate, a p-type highly-oriented diamond film is formed on the insulating diamond film. An ohmic electrode is...
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5436505 |
Heat-resisting ohmic contact on semiconductor diamond layer
Disclosed is a heat-resistant ohmic contact formed on a semiconducting diamond. It has a contact Ti layer having a thickness of 10 to 70 Å and a carbide layer generated by the reaction between...
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5434432 |
Antifuse device for controlling current in a circuit using an antifuse
A device (10) for controlling current through a circuit has an antifuse material (18) separating a first conductor (12) and a second conductor (20). An insulating element (14) and another...
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5432808 |
Compound semicondutor light-emitting device
A compound semiconductor light-emitting device includes a cubic SiC substrate, and an Ga x Al y In 1 -x-y N (0≤x≤1, 0≤y≤1) layer formed on the (111) surface of the cubic-crystal SiC...
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5432357 |
Diamond film electronic devices
A pair of electrodes 3 are first formed on a substrate. Subsequently, an undoped diamond film is selectively deposited between the above electrodes. A B-doped diamond film is then selectively...
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5424561 |
Magnetic sensor element using highly-oriented diamond film and magnetic detector
A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall...
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5420443 |
Microelectronic structure having an array of diamond structures on a nondiamond substrate and associated fabrication methods
A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting...
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5418397 |
Semiconductor device having an interconnection pattern
Disclosed is a method of forming an interconnection pattern which causes no disconnection even when making contact with water in the atmosphere. An interconnection layer is formed on a...
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5416342 |
Blue light-emitting diode with high external quantum efficiency
A light emitting diode is disclosed that emits light in the blue portion of the visible spectrum with high external quantum efficiency. The diode comprises a single crystal silicon carbide...
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5410166 |
P-N junction negative electron affinity cathode
A cold cathode electron sourcing arrangement wherein a negative electron affinity material such as p-type diamond is disposed adjacent a p-n junction in order that electron charge carriers...
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5406081 |
Infrared detector utilizing diamond film
A detector using a diamond thin film having high response speed and sensitivity. A p-type layer may be formed in an upper portion of the diamond film by doping boron thereto. Since a sensor layer...
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5406237 |
Wideband frequency multiplier having a silicon carbide varactor for use in high power microwave applications
The invention provides frequency multiplier circuitry which may be used in the output section of high power microwave systems to efficiently provide higher output frequencies. Generally, one...
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5399883 |
High voltage silicon carbide MESFETs and methods of fabricating same
A high voltage silicon carbide MESFET includes an electric field equalizing region in a monocrystalline silicon carbide substrate at a face thereof, which extends between the drain and gate of the...
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5396085 |
Silicon carbide switching device with rectifying-gate
A silicon carbide switching device includes a three-terminal interconnected silicon MOSFET and silicon carbide MESFET (or JFET) in a composite substrate of silicon and silicon carbide. For three...
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5393999 |
SiC power MOSFET device structure
A MOSFET (100) device having a silicon carbide substrate (102) of a first conductivity type. A first epitaxial layer (104) of said first conductivity type and a second epitaxial layer (106) of a...
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5393993 |
Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
A transition crystal structure is disclosed for providing a good lattice and thermal match between a layer of single crystal silicon carbide and a layer of single crystal gallium nitride. The...
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5391895 |
Double diamond mesa vertical field effect transistor
A double diamond mesa vertical field effect transistor includes a diamond layer, a first diamond mesa on a diamond layer, and a second diamond mesa on the first diamond mesa, opposite the diamond...
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5391914 |
Diamond multilayer multichip module substrate
Diamond is used as a dielectric layer to separate the metalization layers multichip module substrates. The diamond has use for both electrical and thermal conduction. Such multichip module...
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5389799 |
Semiconductor device
Disclosed is a semiconductor device such as a light emitting diode, a MOS transistor, a Schottky diode, and CCD. The semiconductor device comprises a SiC layer of a first conductivity type and...
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5387804 |
Light emitting diode
A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride...
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5385855 |
Fabrication of silicon carbide integrated circuits
A depletion mode MOSFET and resistor are fabricated as a silicon carbide (SiC) integrated circuit (IC). The SiC IC includes a first SiC layer doped to a first conductivity type and a second SiC...
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5384470 |
High temperature rectifying contact including polycrystalline diamond and method for making same
A rectifying contact including a refractory metal carbide layer on a polycrystalline diamond layer provides high temperature operation and may be included in semiconductor devices, such as diodes...
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5384270 |
Method of producing silicon carbide MOSFET
In a method of producing a silicon carbide MOSFET, a predetermined conductivity type region having a predetermined depth is formed in an SiC layer through ion injection and heat treatment...
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5382808 |
Metal boride ohmic contact on diamond and method for making same
An ohmic contact includes a metal boride layer on a semiconducting diamond layer. The metal boride preferably includes boron and a transition metal and, more preferably, a refractory metal. Heating...
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5382809 |
Semiconductor device including semiconductor diamond
A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel...
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5382822 |
Metal-insulator semiconductor field-effect transistor
A MISFET (metal-insulator semiconductor field-effect transistor) may be used for application at temperatures above 200° C. In particular, leakage currents between the gate electrode (6) and the...
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5382812 |
Diamond and II-VI heterojunction semiconductor light emitting device
A light emitting semiconductor heterojunction includes a first layer of n-type semiconducting material comprising a Group II-VI material, and a second layer of p-type semiconducting diamond on the...
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5378921 |
Heterojunction multicollector transistor
There is provided a high-speed heterojunction transistor which is excellent in heat and radiation resistances with its emitter injection efficiency improved due to heterojunction. A β silicon...
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5378901 |
Heterojunction bipolar transistor and method for producing the same
A heterojunction bipolar transistor includes a 3c-silicon carbide crystal layer of a first conductive-type, a silicon crystal layer of a second conductive-type and another 3c-silicon carbide...
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5373176 |
Structurally matched ferroelectric device
A ferroelectrics device includes a semiconductor substrate having a diamond structure or zinc blend structure, and a ferroelectric compound film formed on the semiconductor substrate by selective...
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5373171 |
Thin film single crystal substrate
A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a...
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5373172 |
Semiconducting diamond light-emitting element
A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on...
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5371378 |
Diamond metal base/permeable base transistor and method of making same
A diamond transistor includes a base layer formed of a conductive material which is lattice matched to diamond, and which is embedded between two epitaxial diamond layers to form a monolithic...
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5371382 |
Amorphous silicon rectifying contact on diamond and method for making same
A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type...
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