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7638879 |
Semiconductor package and fabrication method thereof
A semiconductor package and a fabrication method are disclosed. The fabrication method includes applying a sacrificial layer on one surface of a metal carrier, applying an insulation layer on the...
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7626275 |
Semiconductor device
A semiconductor device includes a semiconductor substrate, a first metal film on a back surface of the semiconductor substrate, a second metal film on the first metal film, and a third metal film...
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7626267 |
Semiconductor integrated circuit device including wiring lines and interconnections
Interconnections are formed over an interlayer insulating film which covers MISFETQ 1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a...
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7626264 |
Substrate for device bonding and method for manufacturing same
A substrate for device bonding is provided, which enables bonding of a device with high bond strength to an Au electrode formed on a substrate such as aluminum nitride by soldering the device at a...
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7615867 |
Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate...
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7615491 |
Defectivity and process control of electroless deposition in microelectronics applications
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and...
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7611987 |
Defectivity and process control of electroless deposition in microelectronics applications
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and...
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7611988 |
Defectivity and process control of electroless deposition in microelectronics applications
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and...
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7579696 |
Semiconductor device
A semiconductor device includes an effective wire formed above a substrate in a multilayer interconnection structure and having a first electrode pad in a top layer; a first reinforcing material...
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7575994 |
Semiconductor device and manufacturing method of the same
The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film...
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7554202 |
Semiconductor integrated circuit device
Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a...
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7547972 |
Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof
The laminated structure includes a substrate of low dielectric constant material of silicon compound and an electroless copper plating layer laminated thereon with a barrier layer. The barrier...
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7545043 |
Device comprising multi-layered thin film having excellent adhesive strength and method for fabricating the same
A device comprises a multi-layered thin film having excellent adhesion due to the method of fabricating the same. More particularly, the device includes a multi-layered thin film consisting of a...
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7473642 |
Method for fabricating conductive layer
A method for fabricating a conductive layer is provided. First, a substrate is provided and a patterned adhesion layer is formed on the substrate. Next, a chemical plating process is performed to...
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7470993 |
Semiconductor component with passivation layer
A semiconductor component has a semiconductor body and also a metal/insulation structure arranged above the semiconductor body and having a plurality of metal regions and insulation regions...
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7432584 |
Leadframe for use in a semiconductor package
A leadframe comprises a die mounting area, a plurality of lead fingers and a metal deposit having a negative electrochemical potential with respect to a standard H 2 half cell. A semiconductor...
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7410899 |
Defectivity and process control of electroless deposition in microelectronics applications
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and...
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7385294 |
Semiconductor device having nickel silicide and method of fabricating nickel silicide
A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer...
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7375414 |
High permeability layered films to reduce noise in high speed interconnects
This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated...
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7368326 |
Methods and apparatus to reduce growth formations on plated conductive leads
A process includes annealing one or more plated conductive leads at a predetermined temperature. The one or more plated conductive leads are plated with one or more layers, where each layer...
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7358170 |
Methods of forming conductive interconnects, and methods of depositing nickel
The invention includes methods of electroless plating of nickel selectively on exposed conductive surfaces relative to exposed insulative surfaces. The electroless plating can utilize a bath which...
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7303988 |
Methods of manufacturing multi-level metal lines in semiconductor devices
Methods of forming a multi-level metal line of a semiconductor device are disclosed. One example method includes subsequently stacking first and second metal layers, wherein a conductive etching...
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7253501 |
High performance metallization cap layer
A semiconductor device having a nonconductive cap layer comprising a first metal element. The nonconductive cap layer comprises a first metal nitride, a first metal oxide, or a first metal...
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7253519 |
Chip packaging structure having redistribution layer with recess
A chip structure comprising a chip, a redistribution layer, a second passivation layer and at least a bump is provided. The chip has a first passivation layer and at least a bonding pad. The first...
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7233072 |
Electronic part and surface treatment method of the same
There is provided a surface treatment method for an electronic part, which uses a metal not containing lead and tin and having excellent solder wettability, is economical and has high reliability....
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7224066 |
Bonding material and circuit device using the same
A circuit device is provided in which the bonding reliability of a brazing material such as soft solder is improved. A circuit device of the present invention includes conductive patterns, a...
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7208828 |
Semiconductor package with wire bonded stacked dice and multi-layer metal bumps
A semiconductor package includes a substrate formed of a board material, a semiconductor die bonded to the substrate, and an encapsulant on the die. The package also includes an array of external...
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7202556 |
Semiconductor package having substrate with multi-layer metal bumps
A semiconductor package includes a substrate formed of a board material, a semiconductor die bonded to the substrate, and an encapsulant on the die. The package also includes an array of external...
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7166921 |
Aluminum alloy film for wiring and sputter target material for forming the film
Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than...
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7164205 |
Semiconductor carrier film, and semiconductor device and liquid crystal module using the same
A semiconductor carrier film includes (i) a base film having insulating property, (ii) a barrier layer provided on the base film, the barrier layer including nickel-chrome alloy as a main...
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7135770 |
Semiconductor element with conductive columnar projection and a semiconductor device with conductive columnar projection
A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package...
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7135773 |
Integrated circuit chip utilizing carbon nanotube composite interconnection vias
Conductive paths in an integrated circuit are formed using multiple undifferentiated carbon nanotubes embedded in a conductive metal, which is preferably copper. Preferably, conductive paths...
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7129534 |
Magneto-resistive memory and method of manufacturing the same
A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with...
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7115992 |
Electrode structure for use in an integrated circuit
An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion...
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7105928 |
Copper wiring with high temperature superconductor (HTS) layer
Semiconductor devices and methods of forming the semiconductor devices using an HTS (High Temperature Superconductor) layer in combination with a typical diffusion layer between the dielectric...
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7102229 |
Capacitor containing high purity tantalum
Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials...
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7098539 |
Electronic device, method of manufacture of the same, and sputtering target
In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the...
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7078809 |
Chemical leadframe roughening process and resulting leadframe and integrated circuit package
A chemical leadframe roughening process includes cleaning and chemically micro-etching a raw copper leadframe to remove organic material and oxide material from the surface. The surface of the...
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7075113 |
Semiconductor device and method for fabricating the same
A light-emitting device and method for fabricating the same are revealed. The light-emitting device includes an epitaxial structure, a P-type ohmic contact electrode and an N-type ohmic contact...
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7052922 |
Stable electroless fine pitch interconnect plating
A method and apparatus for plating facilitates the plating of a small contact feature of a wafer die while providing a relatively stable plating bath. The method utilizes a supplemental plating...
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7034398 |
Semiconductor device having contact plug and buried conductive film therein
A semiconductor device includes an active element structure that is formed on a semiconductor substrate and has a connection region formed in the surface of the semiconductor substrate. A contact...
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7002253 |
Semiconductor device and design method thereof
It is an object of the present invention to achieve a semiconductor device capable of preventing circuit malfunctions caused by noise without decreasing an integration degree of the circuit by...
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6995475 |
I/C chip suitable for wire bonding
A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an...
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6992389 |
Barrier for interconnect and method
A method of creating a multi-layered barrier for use in an interconnect, a barrier for an interconnect, and an interconnect including the barrier are disclosed. The method includes creating the...
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6992334 |
Multi-layer highly reflective ohmic contacts for semiconductor devices
A high performance, highly reflective ohmic contact, in the visible spectrum (400 nm–750 nm), has the following multi-layer metal profile. A uniform and thin ohmic contact material is deposited...
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6992397 |
Electroless nickel immersion gold semiconductor flip chip package
A flip chip package, apparatus and technique in which a ball grid array composed of a doped eutectic Pb/Sn solder composition is used. The dopant in the Pb/Sn solder forms a compound or complex...
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6969911 |
Wiring structure of semiconductor device and production method of the device
In a wiring structure of a semiconductor device, dielectric tolerance of the wiring is improved by preventing diffusion of the wiring material. The wiring structure of the semiconductor device...
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6965167 |
Laminated chip electronic device and method of manufacturing the same
The present invention discloses a laminated chip electronic device and a method of manufacturing the same. In the laminated chip electronic device and the method of manufacturing the same according...
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6903417 |
Power semiconductor device
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground...
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6894311 |
Active matrix substrate for liquid crystal display utilizing interconnection lines formed from multilayered films that include an aluminum-neodymium alloy layer
An active matrix substrate comprises a matrix array of TFTs. A double-layered film includes an under-layer of aluminum-neodymium (Al—Nd) alloy and an over-layer of high melting point metal. The...
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