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9035459 Structures for improving current carrying capability of interconnects and methods of fabricating the same  
Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying...
9030017 Z-connection using electroless plating  
An assembly includes a substrate having a substrate conductor and a contact at a first surface and a terminal at a second surface for electrically interconnecting the assembly with a component...
9018760 Solder interconnect with non-wettable sidewall pillars and methods of manufacture  
A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface....
9006899 Layer stack  
In one embodiment method, a first Ti based layer is deposited on the substrate. An intermediate Al based layer is deposited on the first layer, a second NiV based layer is deposited on the...
8981578 Sensor array package  
A sensor array package can include a sensor disposed on a first side of a substrate. Signal trenches can be formed along the edges of the substrate and a conductive layer can be deposited in the...
8970037 Terminal structure, and semiconductor element and module substrate comprising the same  
A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an...
8963331 Semiconductor constructions, semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers  
Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both...
8952538 Semiconductor device and method for manufacturing the same  
A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings...
8946903 Electrically conductive laminate structure containing graphene region  
Some embodiments include electrical interconnects. The interconnects may contain laminate structures having a graphene region sandwiched between non-graphene regions. In some embodiments the...
8896122 Semiconductor devices having gates including oxidized nickel  
Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide...
8884432 Substrate and assembly thereof with dielectric removal for increased post height  
An interconnection substrate includes a plurality of electrically conductive elements of at least one wiring layer defining first and second lateral directions. Electrically conductive projections...
8884310 Direct formation of graphene on semiconductor substrates  
The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front...
8872341 Semiconductor structure having metal oxide or nirtride passivation layer on fill layer and method for making same  
One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a...
8822327 Contact pads with sidewall spacers and method of making contact pads with sidewall spacers  
A chip contact pad and a method of making a chip contact pad are disclosed. An embodiment of the present invention includes forming a plurality of contact pads over a workpiece, each contact pad...
8760882 Wiring structure for improving crown-like defect and fabrication method thereof  
A wiring structure for improving a crown-like defect and a fabrication method thereof are provided. The method includes the following steps. A substrate, on which a seed layer and a patterned...
8754528 Semiconductor device  
A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a...
8749066 Semiconductor constructions  
Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both...
8742571 Diode array and method for producing a diode array  
A diode arrangement includes a diode and two electrodes. Each electrode is connected to the diode in an electrically conductive manner via a soldered connection on one of two oppositely arranged...
8735273 Forming wafer-level chip scale package structures with reduced number of seed layers  
A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad...
8720048 Method of manufacturing a printed circuit board  
A method of manufacturing a printed circuit board includes arranging a core layer in which a bending prevention portion of at least two layers that are metal layers having different thermal...
8658914 Electronic component device and method for manufacturing the same  
An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, both of which are composed of a Ni film. A bonding...
8647974 Method of fabricating a semiconductor chip with supportive terminal pad  
Various semiconductor chip input/output structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor chip...
8637392 Solder interconnect with non-wettable sidewall pillars and methods of manufacture  
A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface....
8633589 Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques  
A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode...
8623752 Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor device  
An ohmic electrode for SiC semiconductor that contains Si and Ni or an ohmic electrode for SiC semiconductor that further contains Au or Pt in addition to Si and Ni is provided. In addition, a...
8587112 Underbump metallurgy employing an electrolytic Cu / electorlytic Ni / electrolytic Cu stack  
An electroless Cu layer is formed on each side of a packaging substrate containing a core, at least one front metal interconnect layer, and at least one backside metal interconnect layer. A...
8581379 Lead frame and semiconductor device  
A lead frame for a resin-seal type semiconductor device, which includes a semiconductor element having an electrode, a bonding wire connected to the electrode of the semiconductor element, and a...
8541096 Printed circuit board and method of manufacturing the same  
There is provided a printed circuit board. The printed circuit board may be configured to include: a core layer in which a bending prevention portion of at least two layers is interposed between a...
8456010 Semiconductor device  
A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a...
8431484 Stable electroless fine pitch interconnect plating  
A method and apparatus for plating facilitates the plating of a small contact feature of a wafer die while providing a relatively stable plating bath. The method utilizes a supplemental plating...
8426971 Top tri-metal system for silicon power semiconductor devices  
A titanium-nickel-palladium solderable metal system for silicon power semiconductor devices (10), which may be used for one or both of the anode (20) or cathode (30). The metal system includes an...
8405109 Low resistance electrode and compound semiconductor light emitting device including the same  
A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound...
8378490 Semiconductor apparatus including a metal alloy between a first contact and a second contact  
A method of integrated circuit fabrication is provided, and more particularly fabrication of a semiconductor apparatus with a metallic alloy. An exemplary structure for a semiconductor apparatus...
8354692 Vertical semiconductor power switch, electronic component and methods of producing the same  
A vertical semiconductor power switch has a semiconductor body having a first surface and a second surface. At least one anode and one control electrode are positioned on the first surface and at...
8344455 Semiconductor device and fabrication method for the same  
The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor...
8338954 Semiconductor apparatus and fabrication method thereof  
A semiconductor apparatus includes an aluminum electrode film formed on a semiconductor chip; and a nickel plated layer formed on the aluminum electrode film, wherein a concentration of sodium and...
8324621 Semiconductor device having oxide semiconductor layer  
Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a...
8314494 Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices  
A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained...
RE43807 Microcircuit package having ductile layer  
A microcircuit package having a ductile layer between a copper flange and die attach. The ductile layer absorbs the stress between the flange and semiconductor device mounted on the flange, and...
8314500 Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers  
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an...
8288867 Semiconductor constructions  
Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both...
8287992 Flexible board  
A reliable flexible board prevents disconnection from occurring in a conductor layer in a stacking process or during use of a product that repeatedly causes deformation. The flexible board...
8283760 Lead frame interconnect scheme with high power density  
An integrated circuit package configured to incorporate a lead frame and methods for its making are is described. The package comprising an IC with aluminum bond pads in communication with...
8273631 Method of fabricating n-channel metal-oxide semiconductor transistor  
A method of fabricating an NMOS transistor, in which, an epitaxial silicon layer is formed before a salicide process is performed, then a nickel layer needed for the salicide process is formed,...
8247836 Nickel tin bonding system with barrier layer for semiconductor wafers and devices  
A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system...
8237262 Method and system for innovative substrate/package design for a high performance integrated circuit chipset  
Provided is a method and system for designing an integrated circuit (IC) substrate, the substrate being formed to include at least one die. The method includes providing at least portions of IC...
8232655 Bump pad metallurgy employing an electrolytic Cu / electorlytic Ni / electrolytic Cu stack  
An electroless Cu layer is formed on each side of a packaging substrate containing a core, at least one front metal interconnect layer, and at least one backside metal interconnect layer. A...
8232643 Lead free solder interconnections for integrated circuits  
Lead free solder interconnections for integrated circuits. A copper column extends from an input/output terminal of an integrated circuit. A cap layer of material is formed on the input/output...
8222740 Zinc oxide based composites and methods for their fabrication  
A transparent, electrically conductive composite includes a layer of molybdenum oxide or nickel oxide deposited on a layer of zinc oxide layer. The molybdenum component exists in a mixed valence...
8148231 Method of fabricating capacitor  
A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode...