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8183668 |
Gallium nitride substrate
A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate...
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8183572 |
Compound semiconductor device and its manufacture method
A vertical type GaN series field effect transistor having excellent pinch-off characteristics is provided. A compound semiconductor device includes a conductive semiconductor substrate, a drain...
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8178898 |
GaN-based semiconductor element
A GaN-based semiconductor element includes a substrate, a buffer layer formed on the substrate, including an electrically conductive portion, an epitaxial layer formed on the buffer layer, and a...
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8168984 |
Light emitting diodes with smooth surface for reflective electrode
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are disposed on one side of the epitaxial layer structure....
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8169003 |
Termination and contact structures for a high voltage GaN-based heterojunction transistor
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer...
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8168000 |
III-nitride semiconductor device fabrication
A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to...
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8163578 |
Light emitting diodes with smooth surface for reflective electrode
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure,...
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8148731 |
Films and structures for metal oxide semiconductor light emitting devices and methods
Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide...
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8133776 |
Semiconductor device and fabrication method for the same
A semiconductor device includes a substrate; a nitride based compound semiconductor layer placed on the substrate; an active area which is placed on the nitride based compound semiconductor layer,...
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8129725 |
Semiconductor sensor
A semiconductor sensor determines physical and/or chemical properties of a medium, in particular a pH sensor. The semiconductor sensor has an electronic component with a sensitive surface, said...
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8124982 |
Semiconductor light-emitting element and method for fabrication the same
The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked...
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8124981 |
Rugged semiconductor device architecture
A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the...
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8120046 |
Light-emitting element
A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type...
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8115211 |
Silicon carbide semiconductor device and manufacturing method thereof
An objective is to provide a manufacturing method of a silicon carbide semiconductor device in which an electric field applied to a gate oxide film can be relaxed and thereby reliability can be...
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8115230 |
Light emitting device, light emitting device package and lighting system
Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an oxide including gallium aluminum over a gallium oxide substrate,...
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8110427 |
Stacked-layered thin film solar cell and manufacturing method thereof
A stacked-layered thin film solar cell and a manufacturing method thereof are provided. The stacked-layered thin film solar cell includes a front electrode layer, a stacked-layered light-absorbing...
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8110851 |
Nitride-based semiconductor device and method for fabricating the same
A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on...
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8101954 |
Photo-semiconductor device and method of manufacturing the same
A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a...
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8097885 |
Compound semiconductor film, light emitting film, and manufacturing method thereof
Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film...
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8093597 |
In situ dopant implantation and growth of a III-nitride semiconductor body
In one embodiment a method enabling in situ dopant implantation during growth of a III-nitride semiconductor body, comprises establishing a growth environment for the III-nitride semiconductor body...
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8093077 |
Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride
The present invention relates to a method for manufacturing a crack free monocrystalline nitride layer having the composition AlxGa1-xN, where 0≦x≦0.3, on a substrate that is likely to generate ten...
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8093589 |
Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor layer...
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8053785 |
Tunneling field effect transistor switch device
A tunneling field effect transistor (TFET) device includes a semiconductor substrate having a layer of relatively intermediate bandgap semiconductor material, a layer of relatively low bandgap...
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8053782 |
Single and few-layer graphene based photodetecting devices
A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a...
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8044408 |
SiC single-crystal substrate and method of producing SiC single-crystal substrate
The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC...
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8039867 |
ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device
A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.
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8035111 |
Integrated nitride and silicon carbide-based devices
Monolithic electronic devices are providing including a high bandgap layer. A first type of nitride device is provided on a first portion of the high bandgap layer, the first nitride device...
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8035112 |
SIC power DMOSFET with self-aligned source contact
An intermediate product in the fabrication of a MOSFET, including a silicon carbide wafer having a substrate and a drift layer on said substrate, said drift layer having a plurality of source...
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8030164 |
Compound semiconductor structure
A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series...
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8030660 |
Semiconductor device
A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X
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8022413 |
Group III nitride semiconductor substrate and method for cleaning the same
A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of h...
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8022412 |
Epitaxial structure having low defect density
An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of...
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8008668 |
Doped diamond LED devices and associated methods
LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer,...
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8008667 |
Semiconductor device including a transparent semiconductor layer for viewing an underlying transistor in a semiconductor substrate
A semiconductor device includes a first semiconductor layer and a first semiconductor element located in the first semiconductor layer. The semiconductor device also includes a second semiconductor...
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8003452 |
Compound semiconductor device and manufacturing method thereof
A compound semiconductor device includes a carrier transit layer formed over a substrate; a carrier supply layer formed over the carrier transit layer; a first metal film and a second metal film...
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8004011 |
Field effect transistor
A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the...
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7994512 |
Gallium nitride based diodes with low forward voltage and low reverse current operation
New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode...
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7982241 |
Epitaxial substrate, semiconductor device substrate, and HEMT device
A buffer layer formed of Inx1Aly1Gaz1N formed on a base, with an upper part of the buffer layer containing columnar polycrystalline including a grain boundary existing in a direction substantially...
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7982234 |
Light emitting device and method for fabricating the same
There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor...
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7968892 |
Silicon carbide semiconductor device
A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed...
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7968893 |
Semiconductor light emitting device and method of manufacturing the same
Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage...
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7968361 |
GaN based semiconductor light emitting device and lamp
A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp...
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7964911 |
Semiconductor element and electrical apparatus
In a semiconductor element (20) including a field effect transistor (90), a schottky electrode (9a) and a plurality of bonding pads (12S, 12G), at least one of the plurality of bonding pads (12S,...
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7964890 |
Epitaxial substrate, method of making same and method of making a semiconductor chip
Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and...
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7956364 |
Thin film light emitting diode
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue...
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7951698 |
Method of fabricating electronic device using nanowires
A method of fabricating an electronic device using nanowires, minimizing the number of E-beam processing steps and thus improving a yield, includes the steps of: forming electrodes on a substrate;...
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7943924 |
Indium gallium nitride-based Ohmic contact layers for gallium nitride-based devices
Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A...
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7939853 |
Termination and contact structures for a high voltage GaN-based heterojunction transistor
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer...
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7939391 |
III-Nitride devices with recessed gates
III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching...
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7936049 |
Nitride semiconductor device and manufacturing method thereof
It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of...
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