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7619257 Devices including graphene layers epitaxially grown on single crystal substrates  
An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially...
7615804 Superlattice nitride semiconductor LD device  
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more...
7615787 Photo-semiconductor device and method of manufacturing the same  
A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a...
7601986 Epitaxial semiconductor structures having reduced stacking fault nucleation sites  
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
7601985 Semiconductor light-emitting device  
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
7598576 Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices  
An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation,...
7598520 Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof  
A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The (002) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred...
7595507 Semiconductor devices having gallium nitride epilayers on diamond substrates  
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or...
7573075 Compound semiconductor device, production method of compound semiconductor device and diode  
A compound semiconductor device includes hexagonal silicon carbide crystal substrate and a boron-phosphide-based semiconductor layer formed on the silicon carbide crystal substrate, wherein the...
7564061 Field effect transistor and production method thereof  
A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source...
7550821 Nitride semiconductor device  
A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a...
7544249 Large-diameter SiC wafer and manufacturing method thereof  
From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer....
7538352 Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same  
In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the...
7538340 Low side emitting light source and method of making the same  
A light source having a die, a substrate, and a housing is disclosed. The die has a semiconducting light emitting device thereon, the die having a top surface and a bottom surface, light being...
7525122 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides  
A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for...
7514349 Semiconductor optical device and manufacturing method thereof  
The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which...
7504679 Enhancement mode GaN FET with piezoelectric gate  
One or more enhancement mode GaN devices has a stress-reduced gate region which interrupts the normally conductive 2Deg layer. A piezoelectric film is disposed over the stress-reduced gate region...
7452814 Method of polishing GaN substrate  
In a polishing method of a GaN substrate according to this invention, first, while supplying a polishing solution 27 containing abrasives 23 and a lubricant 25, onto a platen 101, the GaN...
7432531 Semiconductor device  
A semiconductor device, which can accurately control carrier density, includes: a single crystal substrate; a semiconductor layer which is made of hexagonal crystal with 6 mm symmetry and is formed...
7378684 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates  
An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the...
7372078 Vertical gallium-nitride based light emitting diode  
A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a...
7309959 Light-emitting device with improved brightness control and narrow frame and electronic apparatus with the light-emitting device  
A light-emitting device and an electronic apparatus, which are capable of preventing reduction of the amount of current flowing through light-emitting elements and which have an excellent display...
7288830 III-V nitride semiconductor substrate and its production method  
A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm...
7274040 Contact and omnidirectional reflective mirror for flip chipped light emitting devices  
A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first...
7271416 Strain compensated semiconductor structures  
Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a...
7250630 Electronic devices formed of high-purity molybdenum oxide  
The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices. The devices according to the present such a bipolar transistor, a...
7230273 Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor  
A semiconductor module comprises independently operable segments 1 (semiconductor elements) on a SiC substrate. Each segment 1 comprises a source electrode pad 2 and a gate electrode pad 3 ...
7229499 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer  
A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a...
7227189 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device  
Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under...
7220680 Method for photolithography in semiconductor manufacturing  
The present disclosure relates generally to the manufacturing of semiconductor devices. In one example, a method for forming a portion of a semiconductor device includes forming a photo sensitive...
7198970 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices  
This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask...
7176497 Group III nitride compound semiconductor  
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which...
7173285 Lithographic methods to reduce stacking fault nucleation sites  
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
7170096 Antimonide-based optical devices  
An optical device includes an antimonide-containing substrate, and an antimonide-containing n-doped layer provided on the substrate. The optical device further includes an antimonide-containing...
7170095 Semi-insulating GaN and method of making the same  
Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The...
7138668 Heterojunction diode with reduced leakage current  
An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity...
7119400 Isotopically pure silicon-on-insulator wafers and method of making same  
A semiconductor wafer structure having a device layer, an insulating layer, and a substrate which is capable of supporting increased semiconductor device densities or increased semiconductor device...
7105932 Power semiconductor module  
A power semiconductor module comprises a wide band gap semiconductor chip having its surface with an electrode provided thereon, and more than one bonding wire which is connected to an edge portion...
7105875 Lateral power diodes  
A lateral power diodes with an optimal drift doping formed in widebandgap semiconductors like Silicon Carbide, Aluminum Nitride and Gallium Nitride and Diamond are provided with a voltage rating...
7075111 Nitride semiconductor substrate and its production method  
A nitride semiconductor substrate having a diameter of 10 mm or more, which has a single-layer structure composed of a nitride semiconductor layer having a basic composition represented by Al x Ga...
7061024 Light-emitting device comprising an EU(II)-activated phosphor  
The invention concerns a light emitting device comprising a light emitting structure capable of emitting primary light of a wavelength less then 480 nm and a luminescent screen comprising a...
7048872 Codoped direct-gap semiconductor scintillators  
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped...
7026669 Lateral channel transistor  
A lateral channel transistor with an optimal conducting channel formed in widebandgap semiconductors like Silicon Carbide and Diamond is provided. Contrary to conventional vertical design of power...
7023010 Si/C superlattice useful for semiconductor devices  
A Si/C superlattice useful for semiconductor devices comprises a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon...
7002179 ZnO system semiconductor device  
In order to provide ZnO system semiconductor devices having a stable p-type ZnO layer, a ZnO thin film is doped with nitrogen atoms having a high concentration. By fabricating the stable p-type ZnO...
6949769 Suppression of MOSFET gate leakage current  
A MOSFET has greatly reduced leakage current between the gate electrode and the channel, source and drain regions. The gate electrode materials have lower electron affinities than the channel,...
6946372 Method of manufacturing gallium nitride based semiconductor light emitting device  
A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device includes forming a contact resistance improved layer on a p-type GaN-based semiconductor layer with at...
6936849 Silicon carbide gate transistor  
A field-effect transistor (FET) device and method of fabrication uses an electrically interconnected polycrystalline or microcrystalline silicon carbide (SiC) gate having a lower electron affinity...
6933531 Heat sink material and method of manufacturing the heat sink material  
Graphite is placed in a case, and the case is set in a furnace. The interior of the furnace is subjected to sintering to produce a porous sintered member of graphite. After that, the case with the...
6930329 Method for manufacturing gallium nitride compound semiconductor  
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which...
Matches 1 - 50 out of 265 1 2 3 4 5 6 >